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1. 发明授权

US07663683B2 Solid state image sensing device which performs a linear conversion operation and a logarithmic conversion operation 有权
标题翻译：执行线性转换操作和对数转换操作的固态图像感测装置
公开(公告)号：US07663683B2
公开(公告)日：2010-02-16
申请号：US11879699
申请日：2007-07-17
申请人： Shigehiro Miyatake
发明人： Shigehiro Miyatake
IPC分类号： H04N5/335
CPC分类号： H04N5/35518 , H01L27/14609 , H01L27/14643 , H04N5/23245 , H04N5/37452
摘要： A solid state image sensing device includes an MOS transistor T2 that has a source thereof connected to a drain of an MOS transistor T1 being provided with a transfer gate which is connected to an embedded photodiode PD; an MOS transistor T5 that has a gate thereof connected to the drain of the MOS transistor T1; and a condenser that has a source thereof connected to the MOS transistor T5. When a linear conversion operation is performed in an entire range of luminance, the MOS transistor T2 works, serving as a switch for resetting, and at least when a logarithmic conversion operation is performed in a part of the range of luminance, the MOS transistor T2 works in a sub-threshold region.
摘要翻译：固态图像感测装置包括：MOS晶体管T2，其源极连接到MOS晶体管T1的漏极; MOS晶体管T2的栅极连接到嵌入式光电二极管PD; MOS晶体管T5，其栅极连接到MOS晶体管T1的漏极; 以及其源极连接到MOS晶体管T5的电容器。当在整个亮度范围内执行线性转换操作时，MOS晶体管T2工作，用作复位开关，并且至少当在亮度范围的一部分中进行对数转换操作时，MOS晶体管T2 工作在一个次阈值区域。

2. 发明授权

US07529383B2 Image input apparatus 有权
标题翻译：图像输入装置
公开(公告)号：US07529383B2
公开(公告)日：2009-05-05
申请号：US10532659
申请日：2003-10-24
申请人： Shigehiro Miyatake , Jun Tanida , Kenji Yamada
发明人： Shigehiro Miyatake , Jun Tanida , Kenji Yamada
IPC分类号： G06K9/00 , H04N5/225 , C09K19/52 , H01L37/00
CPC分类号： G02B3/0056 , H04N5/2253 , H04N5/2254 , H04N5/23229 , H04N9/045
摘要： An image input apparatus which reconfigures a single reconfigured image from a plurality of low-resolution, object reduced images formed in a specified region on the light detecting element by the micro-lens array, wherein a high-resolution, single reconfigured image can be obtained even if the distance between the subject and the micro-lens array is long (infinitely long, for example), and further a reconfigured image can be realized in colors. The image input apparatus is characterized in that the relative distance between a micro-lens (1a) and light detecting cells (3a) in a specified region, where object reduced images corresponding to the micro-lens (1a) are formed, is different in each micro-lenses (1a). In addition, the light detecting cells (3a) are divided into a plurality of regions, and color filters (primary color filter, or complementary color filter, for example) are disposed in each of the divided regions.
摘要翻译：一种图像输入装置，其通过微透镜阵列从形成在光检测元件上的指定区域中的多个低分辨率对象缩小图像重新配置单个重新配置的图像，其中可以获得高分辨率单个重新配置的图像即使被摄体和微透镜阵列之间的距离长（例如无限长），并且还可以以颜色实现重新配置的图像。该图像输入装置的特征在于，在形成与微透镜（1a）对应的物体缩小图像的特定区域中的微透镜（1a）和光检测单元（3a）之间的相对距离不同每个微透镜（1a）。此外，光检测单元（3a）被分成多个区域，并且在每个分割区域中设置滤色器（例如，原色滤色器或互补滤色器）。

3. 发明申请

US20080252762A1 SOLID-STATE IMAGE SENSING DEVICE, METHOD FOR DRIVING SOLID-STATE IMAGE SENSING DEVICE, AND IMAGE SENSING SYSTEM INCORPORATED WITH SOLID-STATE IMAGE SENSING DEVICE 有权
标题翻译：固态图像感测装置，用于驱动固态图像感测装置的方法以及与固态图像感测装置并入的图像感测系统
公开(公告)号：US20080252762A1
公开(公告)日：2008-10-16
申请号：US12100813
申请日：2008-04-10
申请人： Tsuyoshi IWAMOTO , Koichi Kamon , Masayuki Kusuda , Shigehiro Miyatake
发明人： Tsuyoshi IWAMOTO , Koichi Kamon , Masayuki Kusuda , Shigehiro Miyatake
IPC分类号： H04N5/335
CPC分类号： H04N5/363 , H04N5/35518 , H04N5/3745
摘要： In a solid-state image sensing device, a method for driving the solid-state image sensing device, and an image sensing system incorporated with the solid-state image sensing device of the invention, pixel signals having two or more different photoelectric conversion characteristics to be outputted from a pixel section are amplified by using an analog gain with respect to each of the photoelectric conversion characteristics for outputting the amplified pixel signals. This enables to reproduce an image having a wide dynamic range while suppressing lowering of the frame rate.
摘要翻译：在固态图像感测装置中，驱动固态摄像装置的方法以及与本发明的固体摄像装置结合的图像感测系统，具有两个以上不同的光电转换特性的像素信号，通过使用相对于用于输出被放大的像素信号的每个光电转换特性的模拟增益来放大从像素部分输出。这使得能够在抑制帧频降低的同时再现具有宽动态范围的图像。

4. 发明授权

US4935794A Structure and driving method of interline transfer CCD image sensor 失效
标题翻译：线间传输CCD图像传感器的结构和驱动方法
公开(公告)号：US4935794A
公开(公告)日：1990-06-19
申请号：US894712
申请日：1986-08-08
申请人： Shigehiro Miyatake
发明人： Shigehiro Miyatake
IPC分类号： H01L27/148 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/365 , H04N5/367 , H04N5/369 , H04N5/3728
CPC分类号： H01L27/14831
摘要： An interline transfer CCD image sensor includes a plurality of PN junction photosensor elements disposed in a matrix fashion. A plurality of columns of shift register are associated with the matrix aligned PN junction photosensor elements. Each CCD shift register includes a plurality of register elements, each of which includes a buried channel connected to a corresponding PN junction photosensor element via a transfer gate as a potential barrier. A register electrode formed on the buried channel is extended toward the corresponding PN junction photosensor element to cover the transfer gate as the potential barrier. Drive signals are applied to the register electrodes to control the charge transfer operation from the PN junction photosensor to the buried channel in addition to controlling the shift operation in the shift register, thereby eliminating the need for channel stoppers for isolating the photosensor elements.
摘要翻译：行间传送CCD图像传感器包括以矩阵方式设置的多个PN结光传感器元件。多个移位寄存器列与矩阵对准的PN结光电传感器元件相关联。每个CCD移位寄存器包括多个寄存器元件，每个寄存器元件包括经由传输门作为势垒连接到相应的PN结光电传感器元件的掩埋沟道。形成在掩埋沟道上的对准电极朝向相应的PN结光电传感器元件延伸以覆盖传输门作为势垒。除了控制移位寄存器中的移位操作之外，还将驱动信号施加到寄存器电极以控制从PN结光电传感器到掩埋通道的电荷转移操作，由此不需要用于隔离光电传感元件的通道阻挡器。

5. 发明授权

US4479143A Color imaging array and color imaging device 失效
标题翻译：彩色成像阵列和彩色成像装置
公开(公告)号：US4479143A
公开(公告)日：1984-10-23
申请号：US331090
申请日：1981-12-15
申请人： Takashi Watanabe , Shigehiro Miyatake
发明人： Takashi Watanabe , Shigehiro Miyatake
IPC分类号： H04N9/07 , H04N9/04
CPC分类号： H04N9/045
摘要： A color imaging array including green, red and blue sensor elements defined by a single solid-state CCD. The green sensor elements are located at every other element positions along horizontal and vertical directions, the red sensor element are located at element positions between the green elements in adjacent horizontal lines in pairs which occur every other pair of adjacent horizontal lines, and the blue elements are located at the remaining element positions. This arrangement of color imaging array provides red and blue sensor elements in the same sampling rate as the green sensor elements, when horizontal alignment is considered. Thus, this arrangement provides an improved color resolution in horizontal direction.
摘要翻译：包括由单个固态CCD限定的绿色，红色和蓝色传感器元件的彩色成像阵列。绿色传感器元件沿着水平和垂直方向位于每隔一个元件位置处，红色传感器元件位于相邻水平线中的绿色元件之间的元件位置，成对出现在每隔一对相邻的水平线上，并且蓝色元件位于剩余的元素位置。当考虑水平对准时，彩色成像阵列的这种布置以与绿色传感器元件相同的采样速率提供红色和蓝色传感器元件。因此，这种布置在水平方向上提供了改进的颜色分辨率。

6. 发明授权

US08218042B2 Solid-state image-sensing device and camera provided therewith 有权
标题翻译：固态摄像装置及其相机
公开(公告)号：US08218042B2
公开(公告)日：2012-07-10
申请号：US11167855
申请日：2005-06-27
申请人： Shigehiro Miyatake , Tomokazu Kakumoto
发明人： Shigehiro Miyatake , Tomokazu Kakumoto
IPC分类号： H04N3/14
CPC分类号： H04N5/35518 , H01L27/14609 , H01L27/14643
摘要： By feeding an appropriate voltage as a signal φTX to a transfer gate TG, a MOS transistor T1 , is operated in a threshold region. A potential linearly or natural logarithmically converted by a buried photodiode PD is transferred to an N-type floating diffusion layer FD so as to be fed out, as an image signal, via MOS transistors T3 and T4.
摘要翻译：通过向传输门TG馈送适当的电压作为信号TX，MOS晶体管T1在阈值区域中工作。由掩埋光电二极管PD对数转换的电位线性或自然地被传送到N型浮动扩散层FD，以经由MOS晶体管T3和T4作为图像信号送出。

7. 发明申请

US20080284890A1 SOLID-STATE IMAGE-SENSING DEVICE 有权
标题翻译：固态图像感测装置
公开(公告)号：US20080284890A1
公开(公告)日：2008-11-20
申请号：US12117289
申请日：2008-05-08
申请人： Shigehiro Miyatake
发明人： Shigehiro Miyatake
IPC分类号： H04N3/14
CPC分类号： H04N5/3745 , H01L27/14609 , H04N5/353 , H04N5/35518
摘要： A solid-state image-sensing device has a MOS transistor (T1) connected to a photodiode PD (PD) and performing photoelectric conversion, and has, as an integrating circuit for amplifying and integrating the photoelectric current obtained by the photoelectric conversion, a MOS transistor T2 and a capacitor C. In the solid-state image-sensing device, integration operation is controlled by a MOS transistor T6 connected to the gate of the MOS transistor T2.
摘要翻译：固态摄像装置具有连接到光电二极管PD（PD）并进行光电转换的MOS晶体管（T 1），并且作为用于对通过光电转换获得的光电流进行放大和积分的积分电路， MOS晶体管T 2和电容器C.在固态图像感测装置中，集成操作由连接到MOS晶体管T 2的栅极的MOS晶体管T6控制。

8. 发明申请

US20080018766A1 Solid state image sensing device 有权
标题翻译：固态摄像装置
公开(公告)号：US20080018766A1
公开(公告)日：2008-01-24
申请号：US11879699
申请日：2007-07-17
申请人： Shigehiro Miyatake
发明人： Shigehiro Miyatake
IPC分类号： H04N5/335
CPC分类号： H04N5/35518 , H01L27/14609 , H01L27/14643 , H04N5/23245 , H04N5/37452
摘要： A solid state image sensing device comprises an MOS transistor T2 that has a source thereof connected to a drain of an MOS transistor T1 being provided with a transfer gate which is connected to an embedded photodiode PD; an MOS transistor T5 that has a gate thereof connected to the drain of the MOS transistor T1; and a condenser that has a source thereof connected to the MOS transistor T5. When a linear conversion operation is performed in an entire refuge of luminance, the MOS transistor T2 works, serving as a switch for resetting, and at least when a logarithmic conversion operation is performed in a part of the range of luminance, the MOS Transistor T2 works in a sub-threshold region.
摘要翻译：固态图像感测装置包括MOS晶体管T 2，MOS晶体管T 2的源极连接到MOS晶体管T1的漏极，该晶体管T 1设置有连接到嵌入式光电二极管PD的传输栅极; MOS晶体管T 5，其栅极连接到MOS晶体管T1的漏极; 以及其源极连接到MOS晶体管T 5的电容器。当在亮度的整个避难所中进行线性转换操作时，MOS晶体管T2工作，用作复位开关，并且至少当在亮度范围的一部分中进行对数转换操作时，MOS晶体管 T 2工作在子阈值区域。

9. 发明申请

US20070279505A1 Solid-state image sensing device 有权
标题翻译：固态摄像装置
公开(公告)号：US20070279505A1
公开(公告)日：2007-12-06
申请号：US11803193
申请日：2007-05-14
申请人： Tsuyoshi Iwamoto , Shigehiro Miyatake
发明人： Tsuyoshi Iwamoto , Shigehiro Miyatake
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H04N1/03 , H04N1/1934
摘要： A solid-state image sensing device is provided with n one-dimensional pixel arrays for sensing a document image by relative movement of the one-dimensional pixel arrays and the document image in a scanning direction. The solid-state image sensing device includes: an image readout circuit, commonly provided for the one-dimensional pixel arrays, for performing a horizontal readout operation from the one-dimensional pixel arrays with respect to image data acquired by sensing the document image, wherein a pixel array pitch of the one-dimensional pixel arrays in the scanning direction is set to at least (n+1)/n times as large as a pixel width of each of pixels constituting the one-dimensional pixel arrays in the scanning direction, where the symbol “n” represents a positive integer of 2 or more, and the symbol “/” represents division.
摘要翻译：固态图像感测装置设置有n个一维像素阵列，用于通过一维像素阵列和原稿图像在扫描方向上的相对运动来感测文档图像。固态图像感测装置包括：通常为一维像素阵列提供的图像读出电路，用于相对于通过感测文档图像获取的图像数据，从一维像素阵列执行水平读出操作，其中扫描方向上的一维像素阵列的像素阵列间距被设定为构成扫描方向的一维像素阵列的像素的像素宽度的至少（n + 1）/ n倍，其中符号“n”表示2以上的正整数，符号“/”表示除法。

10. 发明授权

US07035482B2 Solid-sate image-sensing device 有权
标题翻译：固态摄像装置
公开(公告)号：US07035482B2
公开(公告)日：2006-04-25
申请号：US10256887
申请日：2002-09-27
申请人： Shigehiro Miyatake
发明人： Shigehiro Miyatake
IPC分类号： G06K7/00 , G06K9/20
CPC分类号： H04N5/35518 , H01L27/14609 , H04N5/3741
摘要： Each unit pixel has a photodiode PD, an amplifying MOS transistor T1 having its gate connected to the cathode of the photodiode PD, and a MOS transistor T2 having its source connected to the node between the photodiode PD and the gate of the MOS transistor T1. Forming only two MOS transistors other than a photodiode PD functioning as a photoelectric converter helps improve the open-area ratio.
摘要翻译：每个单位像素具有光电二极管PD，其栅极连接到光电二极管PD的阴极的放大MOS晶体管T 1和其源极连接到光电二极管PD和MOS晶体管的栅极之间的节点的MOS晶体管T 2 T 1。除了用作光电转换器的光电二极管PD之外，仅形成两个MOS晶体管有助于提高开放面积比。

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