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    • 1. 发明申请
    • ANALYTE SAMPLER TYPES AND TECHNIQUES
    • 分析取样器类型和技术
    • WO2016171768A1
    • 2016-10-27
    • PCT/US2016/000037
    • 2016-04-21
    • BATTELLE MEMORIAL INSTITUTEADDLEMAN, Raymond, S.SHARI LI, XiaohongCHOUYYOK, WilaiwanATKINSON, David, A.
    • ADDLEMAN, Raymond, S.SHARI LI, XiaohongCHOUYYOK, WilaiwanATKINSON, David, A.
    • G01N1/28G01N33/20G01N33/22G01T1/167H01J49/04
    • B01L3/5029B01L2200/0684B01L2200/143G01N1/02G01N27/622G01N2001/022G01N2001/028
    • A unique fiber core sampler composition, related systems, and techniques for designing, making, and using the same are described. The sampler is used to interface with existing field instrumentation, such as Ion Mobility Spectrometer (IMS) equipment. Desired sampler characteristics include its: stiffness/flexibility; thermal mass and conductivity; specific heat; trace substance collection/release dependability, sensitivity and repeatability; thickness; reusability; durability; stability for thermal cleaning; and the like. In one form the sampler has a glass fiber core with a thickness less than 0.3 millimeter that is coated with a polymer including one or more of: polymeric organofluorine, polyimide, polyamide, PolyBenzImidazole (PBI), PolyDiMethylSiloxane (PDMS), sulfonated tetrafluoroethylene (PFSA) and Poly(2,6-diphenyl-p-phenylene Oxide) (PPPO). Multiple polymer coatings with the same or different polymer types may be included, core/substrate surface functional ization utilized, and/or the core/substrate may be at partially filled with thermally conductive particles.
    • 描述了独特的纤维芯采样器组成,相关系统以及用于设计,制造和使用它们的技术。 采样器用于与现有的现场仪表接口,例如离子迁移光谱仪(IMS)设备。 所需的采样器特性包括:刚度/灵活性; 热质量和电导率; 比热 痕量物质收集/释放可靠性,灵敏度和重复性; 厚度; 可重用性; 耐用性; 热清洁的稳定性; 等等。 在一种形式中,采样器具有厚度小于0.3毫米的玻璃纤维芯,其被包覆聚合物的聚合物包括以下中的一种或多种:聚合物有机氟,聚酰亚胺,聚酰胺,聚苯并咪唑(PBI),聚二甲基硅氧烷(PDMS),磺化四氟乙烯(PFSA )和聚(2,6-二苯基 - 对 - 亚苯基氧化物)(PPPO)。 可以包括具有相同或不同聚合物类型的多个聚合物涂层,所用的芯/底物表面官能化,和/或芯/基材可以部分地填充有导热颗粒。
    • 2. 发明授权
    • Method for producing high purity low dielectric constant ceramic and hybrid ceramic films
    • 制造高纯度低介电常数陶瓷和混合陶瓷膜的方法
    • US08012403B2
    • 2011-09-06
    • US10489924
    • 2001-09-14
    • Jerome C. BirnbaumGlen E. FryxellShari Li XiaohongChristopher A. CoyleGlen C. DunhamSuresh BaskaranRalph E. Williford
    • Jerome C. BirnbaumGlen E. FryxellShari Li XiaohongChristopher A. CoyleGlen C. DunhamSuresh BaskaranRalph E. Williford
    • B28B1/30
    • C04B35/62655B01D67/0048B01D67/0058B01D67/0088B01D67/0093B01D71/024B01D2323/18B01D2323/30C04B20/0056C04B35/14C04B35/16C04B35/624C04B38/0022C04B2111/00482C04B2111/1025C04B2235/72H01L21/31695C04B38/0051C04B38/009C04B38/02C04B38/10C04B14/4631
    • Porous ceramic and hybrid ceramic films are useful as low dielectric constant interlayers in semiconductor interconnects. (Hybrid ceramic films are defined as films that contain organic and ceramic molecular components in the structure, as, for example, organosilicates). This invention describes the usefulness of humidity treatments (using specific temperature/humidity treatments as illustrative examples) in increasing mechanical integrity of porous dielectric films with minimal detrimental effect on film porosity or dielectric constant and with no adverse impact on film quality. The efficacy of such treatments is illustrated using surfactant-templated mesoporous silicate films as an example. This invention also describes a specific family of additives to be used with highly pure alkali-metal-free ceramic and hybrid precursors for such dielectric films that will enable better control of the film porosity and quality and lower dielectric constants with the required mechanical integrity. The efficacy of such additives is illustrated using surfactant-templated mesoporous silicate films as a model example. The invention should be broadly applicable to any cross-linked ceramic or hybrid ceramic films (including silicate and organosilicate films, and especially highly porous forms of the films for low-dielectric constant applications). The invention has been found to be particularly effective with surfactant-templated silicate films with nanometer-scale porosity. The invention in either embodiment should also be applicable to evaporation-induced formation of other cross-linked shapes such as fibers and powders.
    • 多孔陶瓷和混合陶瓷膜可用作半导体互连中的低介电常数中间层。 (混合陶瓷膜被定义为在结构中含有有机和陶瓷分子组分的膜,例如有机硅酸盐)。 本发明描述了在增加多孔电介质膜的机械完整性的情况下,湿度处理(使用特定温度/湿度处理作为说明性实例)的有用性,对膜孔隙率或介电常数具有最小的有害影响,并且对膜质量没有不利影响。 以表面活性剂模板的介孔硅酸盐膜为例说明了这种处理的效果。 本发明还描述了与用于这种介电膜的高纯度无碱金属的陶瓷和混合前体一起使用的特定的添加剂族,其将能够以所需的机械完整性更好地控制膜孔隙率和质量以及更低的介电常数。 作为示例,使用表面活性剂模板的中孔硅酸盐膜来说明这些添加剂的功效。 本发明应广泛适用于任何交联的陶瓷或混合陶瓷膜(包括硅酸盐和有机硅酸盐膜,特别是用于低介电常数应用的膜的高度多孔形式)。 已经发现本发明对于具有纳米级孔隙率的表面活性剂模板化硅酸盐膜是特别有效的。 在任一实施方案中的本发明也应适用于其它交联形状如纤维和粉末的蒸发诱导形成。