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1. 发明申请

US20060138498A1 CMOS image sensor and method for manufacturing the same 有权
公开(公告)号：US20060138498A1
公开(公告)日：2006-06-29
申请号：US11315627
申请日：2005-12-23
申请人： Shang Kim
发明人： Shang Kim
IPC分类号： H01L31/062 , H01L31/0232
CPC分类号： H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14645 , H01L27/14685 , H01L27/14689 , H01L31/0232
摘要： Disclosed are a CMOS image sensor capable of improving the focusing capability of light and a method for manufacturing the same. The CMOS image sensor includes a plurality of first micro-lenses formed in the upper part of the planarization layer, each of the first micro-lenses arranged over a corresponding photodiode, and a plurality of second micro-lenses formed on the planarization layer, each of the plurality of second micro-lenses wrapping a corresponding first micro-lens respectively.

2. 发明申请

US20060011932A1 Complementary metal oxide semiconductor image sensor and method for fabricating the same 有权
标题翻译：互补金属氧化物半导体图像传感器及其制造方法
公开(公告)号：US20060011932A1
公开(公告)日：2006-01-19
申请号：US11022858
申请日：2004-12-28
申请人： Shang Kim
发明人： Shang Kim
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L27/14627
摘要： A CMOS image sensor and a method for fabricating the same is disclosed, to enhance the efficiency in condensing the light by forming a multi-layered micro lens with various materials having different refractive indexes, in which the CMOS image sensor includes a plurality of photosensitive devices on a semiconductor substrate; an insulating interlayer on the plurality of photosensitive devices; a plurality of color filter layers in correspondence with the respective photosensitive devices, to filter the light by respective wavelengths; a first micro-lens layer on an entire surface of the color filter layers, to condense the light; and a plurality of second micro-lens layers on the first micro-lens layer in correspondence with the respective photosensitive devices, wherein the second micro-lens layer has the different refractive index from that of the first micro-lens layer.
摘要翻译：公开了CMOS图像传感器及其制造方法，以通过用具有不同折射率的各种材料形成多层微透镜来提高冷凝光的效率，其中CMOS图像传感器包括多个感光装置在半导体衬底上; 多个感光装置上的绝缘中间层; 与各个感光装置对应的多个滤色器层，通过各波长对光进行滤光; 在滤色器层的整个表面上的第一微透镜层，以冷凝光; 以及与所述各个感光装置对应的所述第一微透镜层上的多个第二微透镜层，其中所述第二微透镜层的折射率与所述第一微透镜层的折射率不同。

3. 发明申请

US20060033131A1 Complementary metal oxide semiconductor image sensor and method for fabricating the same 失效
标题翻译：互补金属氧化物半导体图像传感器及其制造方法
公开(公告)号：US20060033131A1
公开(公告)日：2006-02-16
申请号：US11022647
申请日：2004-12-28
申请人： Shang Kim
发明人： Shang Kim
IPC分类号： H01L31/113 , H01L31/062 , H01L31/0232
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627
摘要： A CMOS image sensor and a method for fabricating the same is disclosed, to enhance the image-sensing efficiency by forming a concave lens area for improving the light-condensing efficiency in a planarization layer formed before a micro-lens array, in which the CMOS image sensor includes a plurality of photosensitive devices on a semiconductor substrate; an insulating interlayer on the plurality of photosensitive devices; a plurality of color filter layers in correspondence with the respective photosensitive devices, to filter the light by respective wavelengths; a planarization layer on the color filter layers, and having first micro-lens by intaglio in correspondence with the respective photosensitive patterns to condense the light secondly; and a plurality of second micro-lens layers on the planarization layer in correspondence with the respective photosensitive devices, to condense the light firstly.
摘要翻译：公开了一种CMOS图像传感器及其制造方法，以通过形成用于提高在微透镜阵列之前形成的平坦化层中的聚光效率的凹透镜区域来增强图像感测效率，其中CMOS 图像传感器包括在半导体衬底上的多个光敏器件; 多个感光装置上的绝缘中间层; 与各个感光装置对应的多个滤色器层，通过各波长对光进行滤光; 在滤色器层上的平坦化层，并且具有与各个感光图案对应的凹版的第一微透镜，以二次冷凝光; 以及与各个感光装置对应的平坦化层上的多个第二微透镜层，以首先冷凝光。

4. 发明申请

US20050266240A1 High tensile nonmagnetic stainless steel wire for overhead electric conductor, low loss overhead electric conductor using the wire, and method of manufacturing the wire and overhead electric conductor 有权
标题翻译：用于架空电导体的高强度非磁性不锈钢丝，使用该导线的低损耗高架导体导体，以及制造导线和架空电导体的方法
公开(公告)号：US20050266240A1
公开(公告)日：2005-12-01
申请号：US10853080
申请日：2004-05-25
申请人： Byung Kim , Shang Kim , Byung Woo , Hee Lee , Ju Park , Yong Jeong , Min Lee , Sun Ahn
发明人： Byung Kim , Shang Kim , Byung Woo , Hee Lee , Ju Park , Yong Jeong , Min Lee , Sun Ahn
IPC分类号： H01B5/08 , H01B5/10
CPC分类号： H01B5/104 , Y10T428/2913 , Y10T428/2933 , Y10T428/294
摘要： Provided are the high tensile nonmagnetic stainless steel wire for an low loss overhead electric conductor, the low loss overhead electric conductor using the high tensile nonmagnetic stainless steel wire as its core, and a manufacturing method of them respectively. The high tensile nonmagnetic stainless steel wire reduces a core loss and eddy current loss and minimizes effective electric resistance of the conductor by using the nonmagnetic stainless steel wire, that is a non-magnetic material, rather than a high carbon steel wire, that is a strong magnetic material. In addition, an overall power transmission loss is minimized by strengthening the tensile strength of and reducing a sectional area of the steel wire, making an aluminium-welded layer thicker, and increasing the sectional area of an aluminium conductor.
摘要翻译：提供了一种用于低损耗架空导体的高拉伸非磁性不锈钢丝，以高强度非磁性不锈钢丝为核心的低损耗塔顶导体及其制造方法。高强度非磁性不锈钢丝通过使用作为非磁性材料的非磁性不锈钢丝而不是高碳钢丝来降低铁芯损耗和涡流损耗并最小化导体的有效电阻，即，强磁性材料。此外，通过增强钢丝的拉伸强度和减小钢丝的截面面积，使铝焊接层变厚，并增加铝导体的截面积，从而使整体动力传递损失最小化。

5. 发明申请

US20070120163A1 Complementary metal oxide semiconductor image sensor and method for fabricating the same 失效
标题翻译：互补金属氧化物半导体图像传感器及其制造方法
公开(公告)号：US20070120163A1
公开(公告)日：2007-05-31
申请号：US11641831
申请日：2006-12-20
申请人： Shang Kim
发明人： Shang Kim
IPC分类号： H01L31/062 , H01L31/0232
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627
摘要： A CMOS image sensor and a method for fabricating the same is disclosed, to enhance the image-sensing efficiency by forming a concave lens area for improving the light-condensing efficiency in a planarization layer formed before a micro-lens array, in which the CMOS image sensor includes a plurality of photosensitive devices on a semiconductor substrate; an insulating interlayer on the plurality of photosensitive devices; a plurality of color filter layers in correspondence with the respective photosensitive devices, to filter the light by respective wavelengths; a planarization layer on the color filter layers, and having first micro-lens by intaglio in correspondence with the respective photosensitive patterns to condense the light secondly; and a plurality of second micro-lens layers on the planarization layer in correspondence with the respective photosensitive devices, to condense the light firstly.
摘要翻译：公开了CMOS图像传感器及其制造方法，通过形成用于提高在微透镜阵列之前形成的平坦化层中的聚光效率的凹透镜区域来提高图像感测效率，其中CMOS 图像传感器包括在半导体衬底上的多个光敏器件; 多个感光装置上的绝缘中间层; 与各个感光装置对应的多个滤色器层，通过各波长对光进行滤光; 在滤色器层上的平坦化层，并且具有与各个感光图案对应的凹版的第一微透镜，以二次冷凝光; 以及与各个感光装置对应的平坦化层上的多个第二微透镜层，以首先冷凝光。

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