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    • 1. 发明授权
    • Delay locked loop and method for driving the same
    • 延迟锁定环和驱动方法
    • US08446197B2
    • 2013-05-21
    • US12755949
    • 2010-04-07
    • Seung-Joon AhnJong-Chern Lee
    • Seung-Joon AhnJong-Chern Lee
    • H03L7/00
    • H03L7/0814H03L7/07
    • A delay locked loop includes a delay pulse generation unit, a coding unit, and a delay line. The delay pulse generation unit is configured to generate a delay pulse having a certain width. The coding unit is configured to code the delay pulse and output a code value. The delay line is configured to delay an input clock by the code value, and generate a delayed locked clock. The delay pulse has a logic high level state during a third period equivalent to a difference between a first period, which corresponds to an integer multiple of the input clock, and a second period, which is a certain replica delay period.
    • 延迟锁定环包括延迟脉冲产生单元,编码单元和延迟线。 延迟脉冲产生单元被配置为产生具有一定宽度的延迟脉冲。 编码单元被配置为对延迟脉冲进行编码并输出代码值。 延迟线被配置为通过代码值来延迟输入时钟,并产生延迟的锁定时钟。 延迟脉冲在与第一周期(对应于输入时钟的整数倍)和第二周期(在某个复制延迟周期)之间的差值的第三周期内具有逻辑高电平状态。
    • 3. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US08233339B2
    • 2012-07-31
    • US12875803
    • 2010-09-03
    • Hyun-Su YoonJong-Chern LeeSeung-Joon Ahn
    • Hyun-Su YoonJong-Chern LeeSeung-Joon Ahn
    • G11C7/00
    • G11C7/22G11C7/222G11C2207/2272
    • A semiconductor memory device includes an open-loop-type delay locked loop (DLL) configured to generate a clock signal locked by reflecting a first delay amount which actually occurs in a data path and a second delay amount which is required for locking the clock signal, a latency control unit configured to shift an inputted command according to a latency code value corresponding to the first delay amount and latency information, and output the shifted command, and an additional delay line configured to delay the shifted command according to a delay code value corresponding to the second delay amount, and output the command of which operation timing is controlled.
    • 半导体存储器件包括开环型延迟锁定环(DLL),其被配置为通过反映实际发生在数据路径中的第一延迟量和锁定时钟信号所需的第二延迟量来产生锁定的时钟信号 等待时间控制单元,被配置为根据与第一延迟量和等待时间信息相对应的等待时间码值来移位输入的命令,并输出移位的命令;以及附加延迟线,被配置为根据延迟代码值来延迟移位的命令 对应于第二延迟量,并且输出控制哪个操作定时的命令。
    • 6. 发明申请
    • SEMICONDUCTOR MEMORY DEVICE
    • 半导体存储器件
    • US20120008433A1
    • 2012-01-12
    • US12875803
    • 2010-09-03
    • Hyun-Su YOONJong-Chern LeeSeung-Joon Ahn
    • Hyun-Su YOONJong-Chern LeeSeung-Joon Ahn
    • G11C7/00
    • G11C7/22G11C7/222G11C2207/2272
    • A semiconductor memory device includes an open-loop-type delay locked loop (DLL) configured to generate a clock signal locked by reflecting a first delay amount which actually occurs in a data path and a second delay amount which is required for locking the clock signal, a latency control unit configured to shift an inputted command according to a latency code value corresponding to the first delay amount and latency information, and output the shifted command, and an additional delay line configured to delay the shifted command according to a delay code value corresponding to the second delay amount, and output the command of which operation timing is controlled.
    • 半导体存储器件包括开环型延迟锁定环(DLL),其被配置为通过反映实际发生在数据路径中的第一延迟量和锁定时钟信号所需的第二延迟量来产生锁定的时钟信号 等待时间控制单元,被配置为根据与第一延迟量和等待时间信息相对应的等待时间码值来移位输入的命令,并输出移位的命令;以及附加延迟线,被配置为根据延迟代码值来延迟移位的命令 对应于第二延迟量,并且输出控制哪个操作定时的命令。
    • 10. 发明申请
    • DELAY APPARATUS OF SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF CONTROLLING THE SAME
    • 半导体集成电路的延迟装置及其控制方法
    • US20100283518A1
    • 2010-11-11
    • US12493831
    • 2009-06-29
    • Seung Joon AHNJong Chern LEE
    • Seung Joon AHNJong Chern LEE
    • H03L7/06H03L7/00
    • H03L7/0814H03K5/131H03K2005/00234
    • A delay apparatus of a semiconductor integrated circuit includes a control signal generating unit configured to generate a block control signal and a unit control signal in response to a delay control signal; a plurality of delay blocks, connected in series to each other, and configured to generate a delay clock signal by delaying an input clock signal, wherein each of the delay blocks includes a predetermined number of unit delayers, and the plurality of the delay blocks are configured to be selectively activated in response to the block control signal; and a minute delay unit including a predetermined number of unit delayers and configured to generate an output clock signal by delaying the delay clock signal by adjusting an activation number of the provided unit delayers in response to the unit control signal.
    • 半导体集成电路的延迟装置包括:控制信号生成单元,被配置为响应延迟控制信号产生块控制信号和单元控制信号; 多个延迟块,其彼此串联连接,并且被配置为通过延迟输入时钟信号来产生延迟时钟信号,其中每个延迟块包括预定数量的单位延迟器,并且所述多个延迟块是 被配置为响应于所述块控制信号被选择性地激活; 以及包括预定数量的单位延迟器的分钟延迟单元,并且被配置为通过响应于单元控制信号调整所提供的单位延迟器的激活数来延迟延迟时钟信号来产生输出时钟信号。