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    • 5. 发明申请
    • HYDROGEN PENETRATION BARRIER
    • 氢气穿透障碍物
    • US20110175078A1
    • 2011-07-21
    • US13119308
    • 2010-03-25
    • Yong Il KimIn Jung KimYun-Hee LeeKyoung Seok LeeSeung Hoon Nahm
    • Yong Il KimIn Jung KimYun-Hee LeeKyoung Seok LeeSeung Hoon Nahm
    • H01L51/30H01L29/16
    • C21D3/00C01B3/503C01B3/508
    • Provided is a hydrogen penetration barrier for preventing hydrogen from being diffused and discharged through a barrier and preventing hydrogen embrittlement of a material due to diffusion of hydrogen ions into a material. In detail, the hydrogen penetration barrier prevents penetration of hydrogen ions by using a built-in potential of a semiconductor layer doped with a p-type impurity and a semiconductor layer doped with an n-type impurity and a potential applied by a reverse biased voltage and includes an absorption layer absorbing the hydrogen molecules to primarily prevent the penetration of the hydrogen molecules and uses the absorption layer made of the conductive material as an application electrode of the reverse biased voltage and ionizes the hydrogen absorbed to the absorption layer to secondarily prevent the penetration of the hydrogen molecules and prevent the hydrogen embrittlement.
    • 提供了一种用于防止氢通过阻挡层扩散和排出的氢穿透阻挡层,并且防止由于氢离子扩散到材料中的材料的氢脆化。 详细地说,氢穿透阻挡层通过使用掺杂有p型杂质的半导体层和掺杂有n型杂质的半导体层和通过反向偏置电压施加的电位的内置电位来防止氢离子渗透 并且包括吸收氢分子以吸收氢分子的吸收层,并且使用由导电材料制成的吸收层作为反向偏置电压的施加电极,并将吸收到吸收层的氢电离并二次防止 渗透氢分子并防止氢脆化。
    • 6. 发明授权
    • Hydrogen penetration barrier
    • 氢穿透屏障
    • US08481999B2
    • 2013-07-09
    • US13119308
    • 2009-09-15
    • Yong Il KimIn Jung KimYun-Hee LeeKyoung Seok LeeSeung Hoon Nahm
    • Yong Il KimIn Jung KimYun-Hee LeeKyoung Seok LeeSeung Hoon Nahm
    • H01L51/00
    • C21D3/00C01B3/503C01B3/508
    • Provided is a hydrogen penetration barrier for preventing hydrogen from being diffused and discharged through a barrier and preventing hydrogen embrittlement of a material due to diffusion of hydrogen ions into a material. In detail, the hydrogen penetration barrier prevents penetration of hydrogen ions by using a built-in potential of a semiconductor layer doped with a p-type impurity and a semiconductor layer doped with an n-type impurity and a potential applied by a reverse biased voltage and includes an absorption layer absorbing the hydrogen molecules to primarily prevent the penetration of the hydrogen molecules and uses the absorption layer made of the conductive material as an application electrode of the reverse biased voltage and ionizes the hydrogen absorbed to the absorption layer to secondarily prevent the penetration of the hydrogen molecules and prevent the hydrogen embrittlement.
    • 提供了一种用于防止氢通过阻挡层扩散和排出的氢穿透阻挡层,并且防止由于氢离子扩散到材料中的材料的氢脆化。 详细地说,氢穿透阻挡层通过使用掺杂有p型杂质的半导体层和掺杂有n型杂质的半导体层和通过反向偏置电压施加的电位的内置电位来防止氢离子渗透 并且包括吸收氢分子以吸收氢分子的吸收层,并且使用由导电材料制成的吸收层作为反向偏置电压的施加电极,并将吸收到吸收层的氢电离并二次防止 渗透氢分子并防止氢脆化。