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1. 发明授权

US08679889B2 Hybrid polysilicon heterojunction back contact cell 有权
标题翻译：混合多晶异质结接触电池
公开(公告)号：US08679889B2
公开(公告)日：2014-03-25
申请号：US13333908
申请日：2011-12-21
申请人： Peter J. Cousins , David D. Smith , Seung B. Rim
发明人： Peter J. Cousins , David D. Smith , Seung B. Rim
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022441 , H01L31/0747 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.
摘要翻译：公开了一种制造高效太阳能电池的方法。该方法包括在硅衬底的背面上提供薄的电介质层和掺杂的多晶硅层。随后，可以在硅衬底的背面和前侧上形成高质量的氧化物层和宽带隙掺杂的半导体层。然后可以执行通过接触开口将金属指板平坦化到掺杂多晶硅层上的金属化工艺。镀金属指可以形成第一金属网格线。可以通过将金属直接电镀到硅衬底的背侧上的发射极区域来形成第二金属网格线，从而消除了对第二金属网格线的接触开口的需要。其中优点在于，制造方法提供了降低的热处理，降低的蚀刻步骤，提高的效率以及用于制造高效率太阳能电池的简化程序。

2. 发明授权

US08597970B2 Hybrid polysilicon heterojunction back contact cell 有权
公开(公告)号：US08597970B2
公开(公告)日：2013-12-03
申请号：US13333904
申请日：2011-12-21
申请人： Peter J. Cousins , David D. Smith , Seung B. Rim
发明人： Peter J. Cousins , David D. Smith , Seung B. Rim
IPC分类号： H01L31/18
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/022433 , H01L31/02363 , H01L31/03682 , H01L31/0682 , H01L31/1804 , H01L31/182 , H01L31/202 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

3. 发明申请

US20130164879A1 HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL 有权
公开(公告)号：US20130164879A1
公开(公告)日：2013-06-27
申请号：US13333908
申请日：2011-12-21
申请人： Peter J. Cousins , David D. Smith , Seung B. Rim
发明人： Peter J. Cousins , David D. Smith , Seung B. Rim
IPC分类号： H01L31/18 , H01L31/0236
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022441 , H01L31/0747 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

4. 发明申请

US20130164878A1 HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL 有权
公开(公告)号：US20130164878A1
公开(公告)日：2013-06-27
申请号：US13333904
申请日：2011-12-21
申请人： Peter J. Cousins , David D. Smith , Seung B. Rim
发明人： Peter J. Cousins , David D. Smith , Seung B. Rim
IPC分类号： H01L31/18
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/02168 , H01L31/022425 , H01L31/022433 , H01L31/02363 , H01L31/03682 , H01L31/0682 , H01L31/1804 , H01L31/182 , H01L31/202 , Y02E10/52 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the back side of a silicon substrate. Subsequently, a high quality oxide layer and a wide band gap doped semiconductor layer can both be formed on the back and front sides of the silicon substrate. A metallization process to plate metal fingers onto the doped polysilicon layer through contact openings can then be performed. The plated metal fingers can form a first metal gridline. A second metal gridline can be formed by directly plating metal to an emitter region on the back side of the silicon substrate, eliminating the need for contact openings for the second metal gridline. Among the advantages, the method for manufacture provides decreased thermal processes, decreased etching steps, increased efficiency and a simplified procedure for the manufacture of high efficiency solar cells.

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