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1. 发明授权

US09217195B2 Amorphous carbon film and method for forming same 有权
标题翻译：无定形碳膜及其形成方法
公开(公告)号：US09217195B2
公开(公告)日：2015-12-22
申请号：US14112885
申请日：2012-04-20
申请人： Kouya Oohira , Masaki Nakanishi , Yosuke Taguchi , Setsuo Nakao
发明人： Kouya Oohira , Masaki Nakanishi , Yosuke Taguchi , Setsuo Nakao
IPC分类号： C23C14/06 , C23C16/26 , C23C16/515
CPC分类号： C23C14/0605 , C23C16/26 , C23C16/515 , Y10T428/265
摘要： The present invention provides a film formation method capable of forming a favorable amorphous carbon film under a low vacuum by using a bipolar-type PBII apparatus and the amorphous carbon film to be produced by the film formation method. The film formation method is carried out to form the amorphous carbon film under a low vacuum (1000 to 30000 Pa) by using a power source for the bipolar-type PBII apparatus. There are provided inside a chamber (1) a power source side electrode (3) connected to a power source (6) for the PBII apparatus and a grounding side electrode (4) opposed to the power source side electrode (3). A base material (2) is disposed on one of the power source side electrode (3) and the grounding side electrode (4). Plasma of a noble gas and that of a hydrocarbon-based gas are generated between the base material (2) and the electrode where the base material (2) is not disposed to form the amorphous carbon film on a surface of the base material (2).
摘要翻译：本发明提供能够通过使用双极型PBII装置和通过成膜方法制造的无定形碳膜在低真空下形成有利的无定形碳膜的成膜方法。通过使用双极型PBII装置的电源，进行薄膜形成方法以在低真空（1000〜30000Pa）下形成无定形碳膜。在室（1）内设有与PBII装置的电源（6）连接的电源侧电极（3）和与电源侧电极（3）相对的接地侧电极（4）。基材（2）设置在电源侧电极（3）和接地侧电极（4）之一上。在基材（2）和未设置基材（2）的电极之间产生惰性气体和烃类气体的等离子体，以在基材（2）的表面上形成非晶碳膜）。

2. 发明申请

US20140030512A1 AMORPHOUS CARBON FILM AND METHOD FOR FORMING SAME 有权
标题翻译：非晶碳膜及其形成方法
公开(公告)号：US20140030512A1
公开(公告)日：2014-01-30
申请号：US14112885
申请日：2012-04-20
申请人： Kouya Oohira , Masaki Nakanichi , Yosuke Taguchi , Setsuo Nakao
发明人： Kouya Oohira , Masaki Nakanichi , Yosuke Taguchi , Setsuo Nakao
IPC分类号： C23C14/06
CPC分类号： C23C14/0605 , C23C16/26 , C23C16/515 , Y10T428/265
摘要： The present invention provides a film formation method capable of forming a favorable amorphous carbon film under a low vacuum by using a bipolar-type PBII apparatus and the amorphous carbon film to be produced by the film formation method. The film formation method is carried out to form the amorphous carbon film under a low vacuum (1000 to 30000 Pa) by using a power source for the bipolar-type PBII apparatus. There are provided inside a chamber (1) a power source side electrode (3) connected to a power source (6) for the PBII apparatus and a grounding side electrode (4) opposed to the power source side electrode (3). A base material (2) is disposed on one of the power source side electrode (3) and the grounding side electrode (4). Plasma of a noble gas and that of a hydrocarbon-based gas are generated between the base material (2) and the electrode where the base material (2) is not disposed to form the amorphous carbon film on a surface of the base material (2).
摘要翻译：本发明提供能够通过使用双极型PBII装置和通过成膜方法制造的无定形碳膜在低真空下形成有利的无定形碳膜的成膜方法。通过使用双极型PBII装置的电源，进行薄膜形成方法以在低真空（1000〜30000Pa）下形成无定形碳膜。在室（1）内设有与PBII装置的电源（6）连接的电源侧电极（3）和与电源侧电极（3）相对的接地侧电极（4）。基材（2）设置在电源侧电极（3）和接地侧电极（4）之一上。在基材（2）和未设置基材（2）的电极之间产生惰性气体和烃类气体的等离子体，以在基材（2）的表面上形成非晶碳膜）。

3. 发明授权

US5618345A Method of producing self-supporting thin film of silicon single crystal 失效
标题翻译：硅单晶自支撑薄膜的制造方法
公开(公告)号：US5618345A
公开(公告)日：1997-04-08
申请号：US403956
申请日：1995-03-14
申请人： Kazuo Saitoh , Hiroaki Niwa , Setsuo Nakao , Soji Miyagawa
发明人： Kazuo Saitoh , Hiroaki Niwa , Setsuo Nakao , Soji Miyagawa
IPC分类号： C30B29/06 , B81C1/00 , C30B31/00 , C30B31/22 , C30B33/08 , H01L21/265 , H01L21/306 , H01L29/84 , C30B33/06
CPC分类号： C30B31/22 , C30B29/06 , C30B29/60 , C30B31/00 , Y10S438/977
摘要： A self-supporting thin film of silicon single crystal is produced essentially by the steps of implanting boron ions in a silicon single crystal substrate from one major surface thereof to form a high impurity concentration layer having a high boron concentration in the substrate; heating the silicon single crystal substrate formed with the high impurity concentration layer in an atmosphere containing oxygen to form an oxide film on the surface of the single crystal substrate and make the high impurity concentration layer resistant to etching; masking all of the oxide film surface other than that at the center region on the surface opposite from that implanted with boron ions and then exposing the high impurity concentration layer by high-speed mask etching followed by selective etching; and removing the oxide film.
摘要翻译：基本上通过以下步骤产生硅单晶的自支撑薄膜：从其一个主表面注入硅单晶衬底中的硼离子以在衬底中形成具有高硼浓度的高杂质浓度层; 在含有氧的气氛中加热由高杂质浓度层形成的硅单晶衬底，在单晶衬底的表面上形成氧化膜，使高杂质浓度层耐腐蚀; 掩蔽除与注入硼离子相反的表面上的中心区域以外的所有氧化物膜表面，然后通过高速掩模蚀刻然后选择性蚀刻暴露高杂质浓度层; 并除去氧化膜。

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