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    • 1. 发明授权
    • Diffused integrated resistor
    • 扩散集成电阻
    • US08564096B2
    • 2013-10-22
    • US12667863
    • 2008-07-04
    • Serge PontarolloDominique Berger
    • Serge PontarolloDominique Berger
    • H01L29/00
    • H01L27/0676H01L27/0802H01L29/8605
    • Methods and apparatus according to various aspects of the present invention may operate in conjunction with a resistor formed of a lightly-doped P-type region formed in a portion of a lightly-doped N-type semiconductor well extending on a lightly-doped P-type semiconductor substrate, the well being laterally delimited by a P-type wall extending down to the substrate, the portion of the well being delimited, vertically, by a heavily-doped N-type area at the limit between the well and the substrate and, horizontally, by a heavily-doped N-type wall. A diode may be placed between a terminal of the resistor and the heavily-doped N-type wall, the cathode of the diode being connected to said terminal.
    • 根据本发明的各个方面的方法和装置可以与形成在轻掺杂的N型半导体阱的一部分上的轻掺杂P型区域形成的电阻器结合,所述轻掺杂的N型半导体阱在轻掺杂的P型区域上延伸, 类型的半导体衬底,井被由向下延伸到衬底的P型壁横向限定,阱的部分垂直地由在阱和衬底之间的极限处的重掺杂N型区限定, 水平地,由重掺杂的N型壁。 二极管可以放置在电阻器的端子和重掺杂的N型壁之间,二极管的阴极连接到所述端子。
    • 3. 发明申请
    • DIFFUSED INTEGRATED RESISTOR
    • 扩散集成电阻
    • US20100253423A1
    • 2010-10-07
    • US12667863
    • 2008-07-04
    • Serge PontarolloDominique Berger
    • Serge PontarolloDominique Berger
    • H03F3/45H01L27/06
    • H01L27/0676H01L27/0802H01L29/8605
    • Methods and apparatus according to various aspects of the present invention may operate in conjunction with a resistor formed of a lightly-doped P-type region formed in a portion of a lightly-doped N-type semiconductor well extending on a lightly-doped P-type semiconductor substrate, the well being laterally delimited by a P-type wall extending down to the substrate, the portion of the well being delimited, vertically, by a heavily-doped N-type area at the limit between the well and the substrate and, horizontally, by a heavily-doped N-type wall. A diode may be placed between a terminal of the resistor and the heavily-doped N-type wall, the cathode of the diode being connected to said terminal.
    • 根据本发明的各个方面的方法和装置可以与形成在轻掺杂的N型半导体阱的一部分上的轻掺杂P型区域形成的电阻器结合,所述轻掺杂的N型半导体阱在轻掺杂的P型区域上延伸, 类型的半导体衬底,井被由向下延伸到衬底的P型壁横向限定,阱的部分垂直地由在阱和衬底之间的极限处的重掺杂N型区限定, 水平地,由重掺杂的N型壁。 二极管可以放置在电阻器的端子和重掺杂的N型壁之间,二极管的阴极连接到所述端子。
    • 4. 发明授权
    • Method and device for generating a pulse signal with modulable-width pulses
    • 用于产生具有可调宽度脉冲的脉冲信号的方法和装置
    • US06249161B1
    • 2001-06-19
    • US09526967
    • 2000-03-16
    • Serge Pontarollo
    • Serge Pontarollo
    • H03K3017
    • H03K7/08
    • A method is provided for generating a pulse signal with modulable-width pulses. A set-point signal is generated and compared with a control signal so as to produce the pulse signal. When the control signal is a two-state logical signal, a first reference voltage is taken as the set-point signal. When the control signal is a continuous analog voltage, the set-point signal is varied between the first reference voltage and a predetermined second reference voltage, which is higher than the first reference voltage. Also provided is a device for generating a pulse signal with modulable-width pulses. The device includes a set-point signal generator, a control signal generator, and a comparator that outputs the pulse signal. The set-point signal generator includes a first voltage source for generating a first reference voltage, and a second voltage source for generating a second reference voltage, which is higher than the first reference voltage. In a first operating state, the generated set-point signal varies between the two reference voltages, and in a second operating state, the first reference voltage is supplied as the set-point signal. The set-point signal generator is operated in the first operating state when the control signal generator generates a continuous analog voltage as the control signal, and in the second operating state when the control signal generator generates a two-state logical signal as the control signal.
    • 提供了一种用于产生具有可调宽度脉冲的脉冲信号的方法。 生成设定点信号并与控制信号进行比较,以产生脉冲信号。 当控制信号是双态逻辑信号时,将第一参考电压作为设定点信号。 当控制信号是连续的模拟电压时,设定点信号在第一参考电压和高于第一参考电压的预定的第二参考电压之间变化。 还提供了一种用于产生具有可调宽度脉冲的脉冲信号的装置。 该装置包括设定点信号发生器,控制信号发生器和输出脉冲信号的比较器。 设定点信号发生器包括用于产生第一参考电压的第一电压源和用于产生高于第一参考电压的第二参考电压的第二电压源。 在第一操作状态下,产生的设定点信号在两个参考电压之间变化,并且在第二操作状态下,第一参考电压被提供作为设定点信号。 当控制信号发生器产生连续的模拟电压作为控制信号时,设定点信号发生器在第一操作状态下操作,当控制信号发生器产生作为控制信号的两状态逻辑信号时处于第二操作状态 。
    • 5. 发明授权
    • Clamp
    • US5986861A
    • 1999-11-16
    • US653958
    • 1996-05-22
    • Serge Pontarollo
    • Serge Pontarollo
    • H01L27/02H02H9/00
    • H01L27/0251
    • This invention relates to a device for protecting a circuit against voltage surges, including a MOS transistor of a first type connected to first and second supply terminals by its source and its drain, respectively; a MOS transistor of a second type connected between the second supply terminal and the gate of the first type transistor, by its source and its drain, respectively; and a capacitor having a first terminal connected to the first supply terminal and a second terminal connected to the gate of the second type transistor.
    • 本发明涉及一种用于保护电路免受电压浪涌的装置,包括分别通过其源极及其漏极连接到第一和第二电源端的第一类MOS晶体管; 第二类型的MOS晶体管分别通过其源极和漏极连接在第二电源端子和第一类型晶体管的栅极之间; 以及电容器,其具有连接到第一电源端子的第一端子和连接到第二类型晶体管的栅极的第二端子。
    • 7. 发明授权
    • Device for the adjustment of circuits after packaging
    • 包装后调整电路的装置
    • US06653669B2
    • 2003-11-25
    • US10121427
    • 2002-04-12
    • Sébastien LavilleSerge Pontarollo
    • Sébastien LavilleSerge Pontarollo
    • H01L31072
    • H01L29/66166H01L29/8605
    • An integrated circuit includes an adjustment resistor, and at least one control transistor connected to a first voltage reference. An adjustment element is connected in parallel with the adjustment resistor for adjusting a combined electrical resistance of the adjustment element and the resistor. The adjustment element is connected to the control transistor, and includes a substrate, and a MOS transistor having a source, a drain, and a gate on the substrate. The MOS transistor defines a parasitic bipolar transistor with the substrate. The adjustment element further includes a first resistor connected between the substrate and the source, and a second resistor is connected between the substrate and the drain. A diode is connected in series with the second resistor between the substrate and the drain. The gate and the source of the MOS transistor are connected together with the MOS transistor being broken down so that the adjustable element forms an electrical resistance.
    • 集成电路包括调整电阻器和连接到第一电压基准的至少一个控制晶体管。 调节元件与调节电阻并联连接,用于调节调节元件和电阻器的组合电阻。 调节元件连接到控制晶体管,并且包括衬底和在衬底上具有源极,漏极和栅极的MOS晶体管。 MOS晶体管限定了具有衬底的寄生双极晶体管。 调整元件还包括连接在基板和源极之间的第一电阻器,第二电阻器连接在基板和漏极之间。 二极管与衬底和漏极之间的第二电阻器串联连接。 MOS晶体管的栅极和源极连接在一起,MOS晶体管被分解,使得可调元件形成电阻。
    • 8. 发明授权
    • DC-to-DC converter with low supply voltage
    • DC-DC转换器具有低电源电压
    • US5825163A
    • 1998-10-20
    • US788793
    • 1997-01-24
    • Serge Pontarollo
    • Serge Pontarollo
    • H02M1/00H02M1/36H02M3/158G05F1/10
    • H02M1/36H02M3/158
    • A DC-to-DC converter includes an inductor and a diode that are connected in series between a positive supply terminal and a positive output terminal, and a storage capacitor connected between the positive output terminal and a negative terminal. The DC-to-DC converter further includes a first switch including a lateral MOS transistor connected between the anode of the diode and the negative terminal, a second switch including a vertical MOS transistor connected in parallel to the first switch, a first active load circuit connected between the positive and negative supply terminals and designed to control the first switch, a second active load circuit connected between the positive output terminal and the negative terminal and designed to control the second switch, and an oscillator providing a periodic signal for controlling the active loads.
    • DC-DC转换器包括串联在正电源端子和正极输出端子之间的电感器和二极管,以及连接在正极端子和负极端子之间的存储电容器。 DC-DC转换器还包括第一开关,其包括连接在二极管的阳极和负极端子之间的横向MOS晶体管,第二开关,其包括与第一开关并联连接的垂直MOS晶体管,第一有源负载电路 连接在正电源端子和负电源端子之间,用于控制第一开关;第二有源负载电路,连接在正极输出端子和负极端子之间,用于控制第二开关;以及振荡器,提供用于控制有源 负载
    • 9. 发明申请
    • AMPLIFIER
    • 放大器
    • US20120274405A1
    • 2012-11-01
    • US13443024
    • 2012-04-10
    • Alexandre HUFFENUSSerge PONTAROLLO
    • Alexandre HUFFENUSSerge PONTAROLLO
    • H03F3/04
    • H03F3/265H03F3/3001
    • An amplifier including: an output stage having two first power supply terminals capable of receiving a first voltage defined by first positive and negative variable potentials with respect to a reference potential; and a circuit for controlling the current in transistors of the output stage with a reference value, wherein the output stage includes a first and a second MOS transistors in series between the first two terminals, the junction point of this series association defining an output terminal of the amplifier; the control circuit includes two measurement MOS transistors having their respective sources and gates coupled to the respective sources and gates of the first and second transistors of the output stage; at least one control branch, comprising transistors in series between two terminals of application of a second voltage, defines nodes connected to the gates of the output transistors, said second voltage being greater than the first one.
    • 一种放大器,包括:输出级,具有两个第一电源端子,能够接收相对于参考电位的第一正和负可变电位限定的第一电压; 以及用于以参考值控制所述输出级的晶体管中的电流的电路,其中所述输出级包括串联在所述前两个端子之间的第一和第二MOS晶体管,所述串联关联限定了输出端的输出端 放大器; 控制电路包括两个测量MOS晶体管,它们各自的源极和栅极耦合到输出级的第一和第二晶体管的各个源极和栅极; 包括施加第二电压的两个端子之间串联的晶体管的至少一个控制分支限定连接到输出晶体管的栅极的节点,所述第二电压大于第一电压。