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1. 发明专利

JP2006058827A High speed fingering method for guitar 审中-公开
标题翻译： GUITAR的高速指纹方法
公开(公告)号：JP2006058827A
公开(公告)日：2006-03-02
申请号：JP2004266078
申请日：2004-08-18
申请人： Seiji Ueda , 誠司植田
发明人： UEDA SEIJI
IPC分类号： G09B15/00
摘要： PROBLEM TO BE SOLVED: To provide an exercise method by which a guitar is smoothly and speedily played.
SOLUTION: In the exercise method for the guitar, a player exercises by playing the guitar with fingering between the 7 pos. position and the 10 pos. position.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种吉他平稳，快速地演奏的运动方式。
解决方案：在吉他的锻炼方法中，玩家通过在7个位置之间用手指弹奏吉他练习。位置和10个位置。位置。版权所有（C）2006，JPO＆NCIPI

2. 发明授权

US06224169B1 Integrated brake fluid control electrical connection apparatus 有权
标题翻译：集成制动液控制电气连接装置
公开(公告)号：US06224169B1
公开(公告)日：2001-05-01
申请号：US09204290
申请日：1998-12-03
申请人： Katsunori Aoki , Teruhisa Kohno , Seiji Ueda
发明人： Katsunori Aoki , Teruhisa Kohno , Seiji Ueda
IPC分类号： B60T836
CPC分类号： B60T8/368 , Y10S303/10
摘要： A brake fluid pressure control apparatus for vehicles comprises an electric motor mounted on one side of a housing, an electronic control box mounted on the other side of the housing, and conductive members extending from the electronic control box. The conductive members are inserted in through holes of the housing, and have motor connection male terminals at tip ends thereof. Motor connection male terminals are accommodated in motor accommodation portions provided in the electric motor. The motor connection female terminals and the motor connection male terminals are engaged for electrical connection.
摘要翻译：用于车辆的制动液压控制装置包括安装在壳体的一侧的电动马达，安装在壳体的另一侧的电子控制箱以及从电子控制箱延伸的导电构件。导电构件插入壳体的通孔中，并且在其末端具有电动机连接阳端子。电动机连接公端子容纳在设置在电动机中的电动机容置部分中。电动机连接母端子和电动机连接公端子用于电气连接。

3. 发明授权

US5084416A Method of forming a low resistance contact by forming a contact hole within a recess 失效
标题翻译：通过在接收孔中形成接触孔形成低电阻接触的方法
公开(公告)号：US5084416A
公开(公告)日：1992-01-28
申请号：US481561
申请日：1990-02-20
申请人： Hideto Ozaki , Shuichi Mayumi , Seiji Ueda
发明人： Hideto Ozaki , Shuichi Mayumi , Seiji Ueda
IPC分类号： H01L21/768 , H01L23/485
CPC分类号： H01L21/76802 , H01L23/485 , H01L2924/0002
摘要： The invention is intended to form a recess large in the opening width at the contact hole forming position of the insulator film before opening contact holes in the insulator film, and to open contact holes smaller in opening width at the bottom of the recess.According to the manufacturing method of the invention, since the opening size of the recess in the upper portion of the contact hole may be set larger and by decreasing the shadowing effect when covering the aluminum alloy wiring layer, the degree of covering of the aluminum alloy wiring layer on the side wall of the contact hole is improved, so that reduction of contact resistance and enhancement of reliability may be achieved. Besides, since the bottom of the contact hole may be opened at high precision, mutual fine connection of wiring layers is possible, and even if the elements are integrated at high density, a proper clearance may be maintained between the contact hole and gate electrode, and thereby electrical leak between wiring layers may be effectively prevented.

4. 发明授权

US4610076A Method of manufacturing an insulated gate field effect transistor 失效
标题翻译：绝缘栅场效应晶体管的制造方法
公开(公告)号：US4610076A
公开(公告)日：1986-09-09
申请号：US655672
申请日：1984-09-28
申请人： Seiji Ueda
发明人： Seiji Ueda
IPC分类号： H01L23/52 , H01L21/28 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L23/522 , H01L21/38
CPC分类号： H01L29/6659
摘要： In a method of manufacturing a semiconductor device, a thin silicon dioxide (SiO.sub.2) film for a gate insulation film and a polycrystalline silicon layer are successively deposited on a semiconductor substrate having one electrical conductivity type whereby this polycrystalline silicon layer has a gate electrode pattern. In this step a part of the polycrystalline silicon layer is left at a part where an electric contact with the substrate is to be formed. Parts of source and drain regions are formed by the self-align method with this polycrystalline silicon layer as a mask. A thick passivation film for an interlayer insulation film is formed to cover the whole surface. An aperture is formed selectively in the passivation film to expose the whole polycrystalline silicon layer at the part where the contact is formed. The polycrystalline silicon layer in the aperture part and the thin insulation film thereunder are removed to expose a part of the semiconductor substrate. An impurity is introduced into this exposed part to form a contact region overlapped with a part of the above-mentioned source and drain regions. Therefore, the aperture part for a contact with source and drain regions can be formed without a step of mask adjustment. Thus, a highly integrated function device can be easily realized.
摘要翻译：在制造半导体器件的方法中，在具有一种导电类型的半导体衬底上依次沉积用于栅绝缘膜和多晶硅层的薄二氧化硅（SiO 2）膜，由此该多晶硅层具有栅电极图案。在该步骤中，多晶硅层的一部分留在与基板形成电接触的部分。源极和漏极区域的部分通过自对准方法形成，该多晶硅层作为掩模。形成用于层间绝缘膜的厚钝化膜以覆盖整个表面。在钝化膜中选择性地形成孔，以在形成接触的部分露出整个多晶硅层。去除开口部分中的多晶硅层和其下的薄绝缘膜以暴露半导体衬底的一部分。将杂质引入该暴露部分以形成与上述源极和漏极区域的一部分重叠的接触区域。因此，可以在不进行掩模调节的步骤的情况下形成用于与源区和漏区接触的开口部。因此，可以容易地实现高度集成的功能装置。

5. 发明申请

US20080105935A1 Micromachine Device 审中-公开
标题翻译：微机器
公开(公告)号：US20080105935A1
公开(公告)日：2008-05-08
申请号：US11661355
申请日：2005-08-15
申请人： Hiroshi Ogura , Seiji Ueda , Katsuhiro Makihata
发明人： Hiroshi Ogura , Seiji Ueda , Katsuhiro Makihata
IPC分类号： H01L29/84
CPC分类号： B81B7/007 , H01L2224/02166 , H01L2224/05599 , H01L2224/45124 , H01L2224/45144 , H01L2224/48463 , H01L2224/4847 , H01L2224/49107 , H01L2224/85099 , H01L2224/85205 , H01L2224/85399 , H01L2924/1461 , H01L2924/20303 , H01L2924/01014 , H01L2924/00 , H01L2924/00014
摘要： A micromachine device includes a pad 107a and a pad 107b formed of a polysilicon doped with impurities.
摘要翻译：微机械装置包括由掺杂有杂质的多晶硅形成的焊盘107a和焊盘107b。

6. 发明申请

US20070093047A1 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070093047A1
公开(公告)日：2007-04-26
申请号：US11582556
申请日：2006-10-18
申请人： Yasutoshi Okuno , Michikazu Matsumoto , Masafumi Kubota , Seiji Ueda , Hiroshi Iwai , Kazuo Tsutsui , Kuniyuki Kakushima
发明人： Yasutoshi Okuno , Michikazu Matsumoto , Masafumi Kubota , Seiji Ueda , Hiroshi Iwai , Kazuo Tsutsui , Kuniyuki Kakushima
IPC分类号： H01L21/4763 , H01L21/44 , H01L21/3205
CPC分类号： H01L21/28518 , H01L21/28052 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A gate electrode is formed on a semiconductor substrate containing silicon, then source/drain regions are formed in regions of the semiconductor substrate located to both sides of the gate electrode, and then a nickel alloy silicide layer is formed on at least either the gate electrode or the source/drain regions. In the step of forming the nickel alloy silicide layer, a nickel alloy film and a nickel film are sequentially deposited on the semiconductor substrate and thereafter subjected to heat treatment.
摘要翻译：在包含硅的半导体衬底上形成栅电极，然后在位于栅电极两侧的半导体衬底的区域中形成源极/漏极区，然后在栅极上至少形成一个镍合金硅化物层或源极/漏极区域。在形成镍合金硅化物层的步骤中，在半导体衬底上依次沉积镍合金膜和镍膜，然后进行热处理。

7. 发明授权

US08389125B2 Formaldehyde scavenger and wood material using same 有权
标题翻译：甲醛清除剂和木材使用相同
公开(公告)号：US08389125B2
公开(公告)日：2013-03-05
申请号：US13000982
申请日：2009-06-26
申请人： Ichiro Fujii , Yuji Murata , Seiji Ueda , Shigeo Negishi , Toshiharu Taguchi
发明人： Ichiro Fujii , Yuji Murata , Seiji Ueda , Shigeo Negishi , Toshiharu Taguchi
IPC分类号： B32B21/04
CPC分类号： B27N1/003 , B01J20/0259 , B01J20/0292 , B01J20/22 , B01J2220/46 , Y10T428/31942 , Y10T428/31957 , Y10T428/31989
摘要： Provided are a formaldehyde scavenger capable of providing excellent formaldehyde scavenging performance without discoloring a wood material and not reemitting formaldehyde, and a wood material using the same.The formaldehyde scavenger contains urea, ammonium phosphate monobasic and ammonium phosphate dibasic. The formaldehyde scavenger contains urea, ammonium phosphate monobasic and ammonium phosphate dibasic preferably in a weight ratio of urea/ammonium phosphate monobasic/ammonium phosphate dibasic in the range of 5 to 45/0.5 to 15/1 to 20, and further preferably in a weight ratio of urea/ammonium phosphate monobasic/ammonium phosphate dibasic in the range of 10 to 35/1 to 10/2 to 15. The wood material is prepared by applying the formaldehyde scavenger thereto. The formaldehyde scavenger is preferably applied in the range of 1 to 50 g/m2 by dry weight.
摘要翻译：提供能够提供卓越的甲醛清除性能而不使木材变色而不再次发生甲醛的甲醛清除剂，以及使用其的木材。甲醛清除剂含有尿素，磷酸二氢铵和磷酸氢二铵。甲醛清除剂含有尿素，磷酸二氢铵和磷酸氢二铵，优选以尿素/磷酸二氢铵/磷酸氢二铵的重量比为5〜45 / 0.5〜15/1〜20，进一步优选为重量尿素/磷酸二氢铵/磷酸氢二铵的比例在10〜35/1〜10/2〜15的范围内。通过向其中施加甲醛清除剂制备木材。甲醛清除剂的干燥重量优选为1〜50g / m 2。

8. 发明申请

US20110171482A1 FORMALDEHYDE SCAVENGER AND WOOD MATERIAL USING SAME 有权
标题翻译：甲醛防腐剂和使用它的木材
公开(公告)号：US20110171482A1
公开(公告)日：2011-07-14
申请号：US13000982
申请日：2009-06-26
申请人： Ichiro Fujii , Yuji Murata , Seiji Ueda , Shigeo Negishi , Toshiharu Taguchi
发明人： Ichiro Fujii , Yuji Murata , Seiji Ueda , Shigeo Negishi , Toshiharu Taguchi
IPC分类号： B32B21/04 , C09K3/00
CPC分类号： B27N1/003 , B01J20/0259 , B01J20/0292 , B01J20/22 , B01J2220/46 , Y10T428/31942 , Y10T428/31957 , Y10T428/31989
摘要： Provided are a formaldehyde scavenger capable of providing excellent formaldehyde scavenging performance without discoloring a wood material and not reemitting formaldehyde, and a wood material using the same.The formaldehyde scavenger contains urea, ammonium phosphate monobasic and ammonium phosphate dibasic. The formaldehyde scavenger contains urea, ammonium phosphate monobasic and ammonium phosphate dibasic preferably in a weight ratio of urea/ammonium phosphate monobasic/ammonium phosphate dibasic in the range of 5 to 45/0.5 to 15/1 to 20, and further preferably in a weight ratio of urea/ammonium phosphate monobasic/ammonium phosphate dibasic in the range of 10 to 35/1 to 10/2 to 15. The wood material is prepared by applying the formaldehyde scavenger thereto. The formaldehyde scavenger is preferably applied in the range of 1 to 50 g/m2 by dry weight.
摘要翻译：提供能够提供卓越的甲醛清除性能而不使木材变色而不再次发生甲醛的甲醛清除剂，以及使用其的木材。甲醛清除剂含有尿素，磷酸二氢铵和磷酸氢二铵。甲醛清除剂含有尿素，磷酸二氢铵和磷酸氢二铵，优选以尿素/磷酸二氢铵/磷酸氢二铵的重量比为5〜45 / 0.5〜15/1〜20，进一步优选为重量尿素/磷酸二氢铵/磷酸氢二铵的比例在10〜35/1〜10/2〜15的范围内。通过向其中施加甲醛清除剂制备木材。甲醛清除剂的干燥重量优选为1〜50g / m 2。

9. 发明授权

US07800181B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07800181B2
公开(公告)日：2010-09-21
申请号：US11582556
申请日：2006-10-18
申请人： Yasutoshi Okuno , Michikazu Matsumoto , Masafumi Kubota , Seiji Ueda , Hiroshi Iwai , Kazuo Tsutsui , Kuniyuki Kakushima
发明人： Yasutoshi Okuno , Michikazu Matsumoto , Masafumi Kubota , Seiji Ueda , Hiroshi Iwai , Kazuo Tsutsui , Kuniyuki Kakushima
IPC分类号： H01L29/78
CPC分类号： H01L21/28518 , H01L21/28052 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A gate electrode is formed on a semiconductor substrate containing silicon, then source/drain regions are formed in regions of the semiconductor substrate located to both sides of the gate electrode, and then a nickel alloy silicide layer is formed on at least either the gate electrode or the source/drain regions. In the step of forming the nickel alloy silicide layer, a nickel alloy film and a nickel film are sequentially deposited on the semiconductor substrate and thereafter subjected to heat treatment.
摘要翻译：在包含硅的半导体衬底上形成栅电极，然后在位于栅电极两侧的半导体衬底的区域中形成源极/漏极区，然后在栅极上至少形成一个镍合金硅化物层或源极/漏极区域。在形成镍合金硅化物层的步骤中，在半导体衬底上依次沉积镍合金膜和镍膜，然后进行热处理。

10. 发明授权

US5685617A Unit integrated system and connector 失效
标题翻译：单元集成系统和连接器
公开(公告)号：US5685617A
公开(公告)日：1997-11-11
申请号：US650062
申请日：1996-05-17
申请人： Masahide Hio , Takao Nozaki , Hitoshi Hashiba , Isao Isshiki , Yoshiharu Nakai , Seiji Ueda , Itaru Wada
发明人： Masahide Hio , Takao Nozaki , Hitoshi Hashiba , Isao Isshiki , Yoshiharu Nakai , Seiji Ueda , Itaru Wada
IPC分类号： B60R16/02 , B60R16/023 , B60T8/36 , B60T8/00 , H05K5/06
CPC分类号： B60R16/0239 , B60T8/36 , B60T8/368
摘要： There is disclosed a unit integrated system wherein a hydraulic unit (1) having an upper surface (3a) defining an oil inlet and an electronic control unit (2) for controlling the drive of the hydraulic unit (1) are integrated together in juxtaposition with each other in such a manner that an upper surface (2a) of the electronic control unit is located at a position equal to or lower than the upper surface (3a) of the hydraulic unit (1), whereby an operating space (35) of a piping tool is insured above the electronic control unit (2) in connecting a hydraulic pipe (34) to the oil inlet in the upper surface (3a) of the hydraulic unit (1), and the hydraulic pipe (34) is securely connected to the oil inlet of the hydraulic unit (1) by using the existing spanner-shaped piping tool without interference of the tool with an upper portion of the electronic control unit (2).
摘要翻译：公开了一种单元集成系统，其中具有限定油入口的上表面（3a）和用于控制液压单元（1）的驱动的电子控制单元（2）的液压单元（1）并列在一起，与彼此以使得电子控制单元的上表面（2a）位于等于或低于液压单元（1）的上表面（3a）的位置的方式，由此，操作空间（35）将液压管道（34）连接到液压单元（1）的上表面（3a）中的进油口，电子控制单元（2）上方配有管道工具，液压管道（34）牢固地连接通过使用现有的扳手形状的管道工具将液压单元（1）的进油口连接到电子控制单元（2）的上部，而不会使工具受到干扰。

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