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1. 发明申请

US20100320170A1 METHOD AND APPARATUS FOR ETCHING A STRUCTURE IN A PLASMA CHAMBER 审中-公开
标题翻译：用于蚀刻等离子体室中的结构的方法和装置
公开(公告)号：US20100320170A1
公开(公告)日：2010-12-23
申请号：US12862880
申请日：2010-08-25
申请人： Seiji Iseda
发明人： Seiji Iseda
IPC分类号： C23F1/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/32706 , H01J37/32935 , H01J2237/08
摘要： A plasma processing apparatus includes a plasma reaction chamber in which a plasma is generated for processing. First and second electrodes are located in the chamber for generating the plasma. First and second RF power sources provide RF power to the first and second electrodes, respectively. The apparatus also includes first and second impedance matching circuits through which the RF power is respectively provided from the first and second RF power supplies to the first and second electrodes. A first plasma controller monitors plasma density and, in response thereto, adjusts the RF power supplied by the first RF power source to the first electrode to achieve a given plasma density. A second plasma controller monitors the ion energy of plasma species impinging on a semiconductor structure associated with the second electrode and, in response thereto, adjusts the RF power supplied by the second RF power source to the second electrode to achieve a given ion energy.
摘要翻译：等离子体处理装置包括等离子体反应室，其中产生用于处理的等离子体。第一和第二电极位于室中用于产生等离子体。第一和第二RF电源分别向第一和第二电极提供RF功率。该装置还包括第一和第二阻抗匹配电路，RF功率分别从第一和第二RF电源提供给第一和第二电极。第一等离子体控制器监测等离子体密度，并且响应于此，将由第一RF电源提供的RF功率调整到第一电极以获得给定的等离子体密度。第二等离子体控制器监测入射到与第二电极相关联的半导体结构上的等离子体物质的离子能量，并且响应于此，将由第二RF电源提供的RF功率调整到第二电极以获得给定的离子能量。

2. 发明授权

US07799237B2 Method and apparatus for etching a structure in a plasma chamber 有权
标题翻译：用于蚀刻等离子体室中的结构的方法和装置
公开(公告)号：US07799237B2
公开(公告)日：2010-09-21
申请号：US11440918
申请日：2006-05-25
申请人： Seiji Iseda
发明人： Seiji Iseda
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/32706 , H01J37/32935 , H01J2237/08
摘要： A plasma processing apparatus includes a plasma reaction chamber in which a plasma is generated for processing. First and second electrodes are located in the chamber for generating the plasma. First and second RF power sources provide RF power to the first and second electrodes, respectively. The apparatus also includes first and second impedance matching circuits through which the RF power is respectively provided from the first and second RF power supplies to the first and second electrodes. A first plasma controller monitors plasma density and, in response thereto, adjusts the RF power supplied by the first RF power source to the first electrode to achieve a given plasma density. A second plasma controller monitors the ion energy of plasma species impinging on a semiconductor structure associated with the second electrode and, in response thereto, adjusts the RF power supplied by the second RF power source to the second electrode to achieve a given ion energy.
摘要翻译：等离子体处理装置包括等离子体反应室，其中产生用于处理的等离子体。第一和第二电极位于室中用于产生等离子体。第一和第二RF电源分别向第一和第二电极提供RF功率。该装置还包括第一和第二阻抗匹配电路，RF功率分别从第一和第二RF电源提供给第一和第二电极。第一等离子体控制器监测等离子体密度，并且响应于此，将由第一RF电源提供的RF功率调整到第一电极以获得给定的等离子体密度。第二等离子体控制器监测入射到与第二电极相关联的半导体结构上的等离子体物质的离子能量，并且响应于此，将由第二RF电源提供的RF功率调整到第二电极以获得给定的离子能量。

3. 发明申请

US20070272358A1 Method and apparatus for etching a structure in a plasma chamber 有权
标题翻译：用于蚀刻等离子体室中的结构的方法和装置
公开(公告)号：US20070272358A1
公开(公告)日：2007-11-29
申请号：US11440918
申请日：2006-05-25
申请人： Seiji Iseda
发明人： Seiji Iseda
IPC分类号： C23F1/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/32706 , H01J37/32935 , H01J2237/08
摘要： A plasma processing apparatus includes a plasma reaction chamber in which a plasma is generated for processing. First and second electrodes are located in the chamber for generating the plasma. First and second RF power sources provide RF power to the first and second electrodes, respectively. The apparatus also includes first and second impedance matching circuits through which the RF power is respectively provided from the first and second RF power supplies to the first and second electrodes. A first plasma controller monitors plasma density and, in response thereto, adjusts the RF power supplied by the first RF power source to the first electrode to achieve a given plasma density. A second plasma controller monitors the ion energy of plasma species impinging on a semiconductor structure associated with the second electrode and, in response thereto, adjusts the RF power supplied by the second RF power source to the second electrode to achieve a given ion energy.
摘要翻译：等离子体处理装置包括等离子体反应室，其中产生用于处理的等离子体。第一和第二电极位于室中用于产生等离子体。第一和第二RF电源分别向第一和第二电极提供RF功率。该装置还包括第一和第二阻抗匹配电路，RF功率分别从第一和第二RF电源提供给第一和第二电极。第一等离子体控制器监测等离子体密度，并且响应于此，将由第一RF电源提供的RF功率调整到第一电极以获得给定的等离子体密度。第二等离子体控制器监测入射到与第二电极相关联的半导体结构上的等离子体物质的离子能量，并且响应于此，将由第二RF电源提供的RF功率调整到第二电极以获得给定的离子能量。

4. 发明申请

US20070056930A1 POLYSILICON ETCHING METHODS 审中-公开
标题翻译：多晶硅蚀刻方法
公开(公告)号：US20070056930A1
公开(公告)日：2007-03-15
申请号：US11162550
申请日：2005-09-14
申请人： Seiji Iseda , Siddhartha Panda , Michael Sievers , Richard Wise
发明人： Seiji Iseda , Siddhartha Panda , Michael Sievers , Richard Wise
IPC分类号： C03C25/68 , B44C1/22 , H01L21/461 , C23F1/00
CPC分类号： H01L21/32137
摘要： Polysilicon etching methods are disclosed that employ a gas flow including perfluorocyclopentene (C5F8) and nitrogen trifluoride (NF3). The etching methods achieved a substantially vertical profile and smoother surfaces, and may achieve a 3sigma variation as low as 3.0 nm.
摘要翻译：公开了采用包括全氟环戊烯（C 5 H 5 F 8 N）和三氟化氮（NF 3 3））的气流的多晶硅蚀刻方法。蚀刻方法实现了基本垂直的轮廓和更平滑的表面，并且可以实现低至3.0nm的3σ变化。

5. 发明申请

US20060166423A1 Removal spacer formation with carbon film 审中-公开
标题翻译：用碳膜去除间隔物
公开(公告)号：US20060166423A1
公开(公告)日：2006-07-27
申请号：US11040782
申请日：2005-01-21
申请人： Seiji Iseda
发明人： Seiji Iseda
IPC分类号： H01L21/8238
CPC分类号： H01L29/6656 , H01L21/823864 , H01L29/6653
摘要： A method of making a CMOS device, and a product made by the process. The process includes applying a layer of a carbon film or carbon-containing compound to a substrate. A section of the carbon is etched with a plasma, e.g., an O2, Ar, N2, or He plasma. Ion-implantation, e.g., of As, B, or P, is performed in some of the etched areas, and the carbon is removed with a second plasma.
摘要翻译：制造CMOS器件的方法以及由该工艺制成的产品。该方法包括将一层碳膜或含碳化合物涂覆在基材上。用等离子体蚀刻碳的一部分，例如O 2，Ar，N 2或He等离子体。在一些蚀刻区域中进行离子注入，例如As，B或P的离子注入，用第二等离子体除去碳。

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