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    • 2. 发明授权
    • Thin film transistor matrix device
    • 薄膜晶体管矩阵器件
    • US5483082A
    • 1996-01-09
    • US174030
    • 1993-12-28
    • Hideaki TakizawaYasuhiro NasuKazuhiro WatanabeShiro HirotaKazuo NonakaSeii SatoTeiji Majima
    • Hideaki TakizawaYasuhiro NasuKazuhiro WatanabeShiro HirotaKazuo NonakaSeii SatoTeiji Majima
    • G02F1/136G02F1/13G02F1/1333G02F1/1345G02F1/1362G02F1/1368H01L21/336H01L27/12H01L29/78H01L29/786
    • G02F1/13458G02F1/136213H01L27/12G02F1/1345G02F1/13452G02F2001/133357
    • A thin film transistor matrix device comprises a transparent insulating substrate, a thin film transistor unit, a picture element unit, a storage capacitance unit, a gate terminal unit, and a drain terminal unit, the storage capacitance unit including a storage capacitance electrode formed on the transparent insulating substrate and formed of a metal layer of the same material as the gate electrode; a dielectric film formed on the storage capacitance electrode and formed of an insulating film common with the gate insulating film and a non-doped semiconductor layer of the same material as the semiconductor active layer; and a counter electrode formed on the dielectric film and formed of a doped semiconductor layer of the same material as the semiconductor contact layer and a metal layer of the same material as the source electrode and the drain electrode, the counter electrode being connected to the picture element electrode through a contact hole opened in a protecting film common with the passivation film. Thus, the fabrication process of the TFT matrix device can be simplified, and lower costs can be realized. Characteristic changes of the storage capacitance can be prevented, and yields and reliability can be improved.
    • 一种薄膜晶体管矩阵器件,包括透明绝缘衬底,薄膜晶体管单元,像素单元,存储电容单元,栅极端子单元和漏极端子单元,所述存储电容单元包括形成在 透明绝缘基板,由与栅电极相同材料的金属层形成; 形成在所述辅助电容电极上并由与所述栅极绝缘膜共用的绝缘膜和与所述半导体有源层相同材料的非掺杂半导体层形成的电介质膜; 以及形成在电介质膜上并由与半导体接触层相同材料的掺杂半导体层和与源电极和漏电极相同材料的金属层形成的对电极,对电极连接到图像 元件电极通过在与钝化膜共同的保护膜中打开的接触孔。 因此,可以简化TFT矩阵器件的制造工艺,并且可以实现更低的成本。 可以防止存储电容的特性变化,并且可以提高产量和可靠性。
    • 3. 发明授权
    • Method for fabricating thin film transistor matrix device
    • 制造薄膜晶体管矩阵器件的方法
    • US5580796A
    • 1996-12-03
    • US470057
    • 1995-06-06
    • Hideaki TakizawaYasuhiro NasuKazuhiro WatanabeShiro HirotaKazuo NonakaSeii SatoTeiji Majima
    • Hideaki TakizawaYasuhiro NasuKazuhiro WatanabeShiro HirotaKazuo NonakaSeii SatoTeiji Majima
    • G02F1/136G02F1/13G02F1/1333G02F1/1345G02F1/1362G02F1/1368H01L21/336H01L27/12H01L29/78H01L29/786H01L21/84
    • G02F1/13458G02F1/136213H01L27/12G02F1/1345G02F1/13452G02F2001/133357
    • A thin film transistor matrix device comprises a transparent insulating substrate, a thin film transistor unit, a picture element unit, a storage capacitance unit, a gate terminal unit, and a drain terminal unit, the storage capacitance unit including a storage capacitance electrode formed on the transparent insulating substrate and formed of a metal layer of the same material as the gate electrode; a dielectric film formed on the storage capacitance electrode and formed of an insulating film common with the gate insulating film and a non-doped semiconductor layer of the same material as the semiconductor active layer; and a counter electrode formed on the dielectric film and formed of a doped semiconductor layer of the same material as the semiconductor contact layer and a metal layer of the same material as the source electrode and the drain electrode, the counter electrode being connected to the picture element electrode through a contact hole opened in a protecting film common with the passivation film. Thus, the fabrication process of the TFT matrix device can be simplified, and lower costs can be realized. Characteristic changes of the storage capacitance can be prevented, and yields and reliability can be improved.
    • 一种薄膜晶体管矩阵器件,包括透明绝缘衬底,薄膜晶体管单元,像素单元,存储电容单元,栅极端子单元和漏极端子单元,所述存储电容单元包括形成在 透明绝缘基板,由与栅电极相同材料的金属层形成; 形成在所述辅助电容电极上并由与所述栅极绝缘膜共用的绝缘膜和与所述半导体有源层相同材料的非掺杂半导体层形成的电介质膜; 以及形成在电介质膜上并由与半导体接触层相同材料的掺杂半导体层和与源电极和漏电极相同材料的金属层形成的对电极,对电极连接到图像 元件电极通过在与钝化膜共同的保护膜中打开的接触孔。 因此,可以简化TFT矩阵器件的制造工艺,并且可以实现更低的成本。 可以防止存储电容的特性变化,并且可以提高产量和可靠性。