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1. 发明申请

US20120224440A1 MEMORY DEVICE AND METHOD OF WRITING DATA TO A MEMORY DEVICE 有权
标题翻译：存储器件和将数据写入存储器件的方法
公开(公告)号：US20120224440A1
公开(公告)日：2012-09-06
申请号：US13422906
申请日：2012-03-16
申请人： Naveen BATRA , Rajiv Kumar , Saurabh Agrawal
发明人： Naveen BATRA , Rajiv Kumar , Saurabh Agrawal
IPC分类号： G11C7/12 , G11C7/10 , G11C7/00
CPC分类号： G11C7/12 , G11C8/08 , G11C11/413
摘要： In a memory device, a bitline write voltage is applied to a first bitline. A wordline voltage is applied to a first wordline for writing data to a first memory cell connected to the first wordline and the first bitline. The first bitline and the second bitline are electrically connected for charge sharing between the first bitline and the second bitline. A predetermined time after electrically connecting the first bitline and the second bitline, the first and the second bitline are electrically disconnected and the bitline write voltage is applied to the second bitline. The wordline voltage is applied to a second wordline for writing data to a second memory cell connected to the second wordline and the second bitline.
摘要翻译：在存储器件中，位线写入电压被施加到第一位线。将字线电压施加到第一字线，以将数据写入连接到第一字线和第一位线的第一存储器单元。第一位线和第二位线被电连接用于第一位线和第二位线之间的电荷共享。在电连接第一位线和第二位线之后的预定时间，第一和第二位线被电断开，并且位线写入电压被施加到第二位线。字线电压被施加到第二字线，用于将数据写入连接到第二字线和第二位线的第二存储器单元。

2. 发明申请

US20080089829A1 In-situ back-contact formation and site-selective assembly of highly aligned carbon nanotubes 审中-公开
标题翻译：高度排列的碳纳米管的原位反接触形成和位置选择性组装
公开(公告)号：US20080089829A1
公开(公告)日：2008-04-17
申请号：US11580279
申请日：2006-10-13
申请人： Ramanath Ganapathiraman , Saurabh Agrawal , Matthew J. Frederick , Raghuveer Makala
发明人： Ramanath Ganapathiraman , Saurabh Agrawal , Matthew J. Frederick , Raghuveer Makala
IPC分类号： B82B3/00 , D01F9/12 , D01C5/00
CPC分类号： D01F9/12 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/06 , C01B2202/08 , H01L31/035281 , H01L31/108 , H01L51/0048 , Y02E10/50
摘要： Controllably aligned carbon nanotubes are grown, without the use of a predeposition catalyst, on electrically conducting templates that form an electrical contact with the nanotubes. The method allows fabrication of nanotube-based devices with built-in back-side electrical contacts on silicon and other substrate surfaces.
摘要翻译：可控制排列的碳纳米管在不使用预沉积催化剂的情况下生长在与纳米管形成电接触的导电模板上。该方法允许在硅和其它衬底表面上制造具有内置背面电触点的基于纳米管的器件。

3. 发明授权

US08780615B2 Memory device and method of writing data to a memory device 有权
标题翻译：存储器件和将数据写入存储器件的方法
公开(公告)号：US08780615B2
公开(公告)日：2014-07-15
申请号：US13422906
申请日：2012-03-16
申请人： Naveen Batra , Rajiv Kumar , Saurabh Agrawal
发明人： Naveen Batra , Rajiv Kumar , Saurabh Agrawal
IPC分类号： G11C11/00
CPC分类号： G11C7/12 , G11C8/08 , G11C11/413
摘要： In a memory device, a bitline write voltage is applied to a first bitline. A wordline voltage is applied to a first wordline for writing data to a first memory cell connected to the first wordline and the first bitline. The first bitline and the second bitline are electrically connected for charge sharing between the first bitline and the second bitline. A predetermined time after electrically connecting the first bitline and the second bitline, the first and the second bitline are electrically disconnected and the bitline write voltage is applied to the second bitline. The wordline voltage is applied to a second wordline for writing data to a second memory cell connected to the second wordline and the second bitline.
摘要翻译：在存储器件中，位线写入电压被施加到第一位线。将字线电压施加到第一字线，以将数据写入连接到第一字线和第一位线的第一存储器单元。第一位线和第二位线被电连接用于第一位线和第二位线之间的电荷共享。在电连接第一位线和第二位线之后的预定时间，第一和第二位线被电断开，并且位线写入电压被施加到第二位线。字线电压被施加到第二字线，用于将数据写入连接到第二字线和第二位线的第二存储器单元。

4. 发明申请

US20130060873A1 REAL TIME EVENT REVIEWING SYSTEM AND METHOD 审中-公开
标题翻译：实时评估系统及方法
公开(公告)号：US20130060873A1
公开(公告)日：2013-03-07
申请号：US13596051
申请日：2012-08-28
申请人： Prashant Gautam , Saurabh Agrawal , Anveesh Raghav , Ayush Ghai
发明人： Prashant Gautam , Saurabh Agrawal , Anveesh Raghav , Ayush Ghai
IPC分类号： G06F15/16
CPC分类号： G06Q10/107
摘要： Collating real time comments associated with an event enables a user to provide the real time comments on proceedings occurring in the event. The method of collating real time comments comprises providing real time comments for the event, wherein the real time comments are provided on a communication device. Thereafter, identifying a position parameter value of the real time comment by the communication device and sending the comments data to the central server by the communication device, wherein the comments data comprises real time comments and the position parameter values, followed by processing the comments data by the central sewer. Processing of the comments data would further comprise collating the real time comments of the user with real time comments from the plurality of users. The user comments are thus synced using algorithms, with a single timeline of the respective event stored in the central server.
摘要翻译：整理与事件相关联的实时评论使得用户能够在事件中发生的诉讼中提供实时评论。整理实时评论的方法包括为事件提供实时注释，其中在通信设备上提供实时注释。此后，通过通信装置识别实时评论的位置参数值，并由通信装置将评论数据发送给中央服务器，其中评论数据包括实时评论和位置参数值，随后处理评论数据由中央下水道。评论数据的处理将进一步包括将用户的实时评论与来自多个用户的实时评论进行对照。因此，用户评论使用算法同步，相应事件的单个时间轴存储在中央服务器中。

5. 发明申请

US20080292531A1 ELECTRICAL CURRENT-INDUCED STRUCTURAL CHANGES AND CHEMICAL FUNCTIONALIZATION OF CARBON NANOTUBES 有权
标题翻译：电流诱导结构变化和碳纳米管的化学官能化
公开(公告)号：US20080292531A1
公开(公告)日：2008-11-27
申请号：US11874543
申请日：2007-10-18
申请人： Ramanath GANAPATHIRAMAN , Saurabh AGRAWAL , Raghuveer S. MAKALA
发明人： Ramanath GANAPATHIRAMAN , Saurabh AGRAWAL , Raghuveer S. MAKALA
IPC分类号： C01B31/00 , D01F9/12
CPC分类号： C01B31/00 , B82Y30/00 , B82Y40/00 , C01B32/00 , C01B32/174 , C01B32/176 , C01B2202/06 , D01F9/12 , Y10S977/752 , Y10S977/842 , Y10S977/847
摘要： A method of cutting, thinning, welding and chemically functionalizing multiwalled carbon nanotubes (CNTs) with carboxyl and allyl moieties, and altering the electrical properties of the CNT films by applying high current densities combined with air-exposure is developed and demonstrated. Such welded high-conductance CNT networks of functionalized CNTs could be useful for device and sensor applications, and may serve as high mechanical toughness mat fillers that are amenable to integration with nanocomposite matrices.
摘要翻译：开发并展示了通过与空气暴露结合使用高电流密度来切割，变薄，焊接和化学官能化具有羧基和烯丙基部分的多壁碳纳米管（CNT）以及改变CNT膜的电性能的方法。功能化CNT的这种焊接高电导CNT网络可用于器件和传感器应用，并且可以用作适于与纳米复合材料基体结合的高机械韧性垫填料。

6. 发明授权

US08758717B2 Electrical current-induced structural changes and chemical functionalization of carbon nanotubes 有权
标题翻译：电流引起的碳纳米管结构变化和化学官能化
公开(公告)号：US08758717B2
公开(公告)日：2014-06-24
申请号：US11874543
申请日：2007-10-18
申请人： Ramanath Ganapathiraman , Saurabh Agrawal , Raghuveer S. Makala
发明人： Ramanath Ganapathiraman , Saurabh Agrawal , Raghuveer S. Makala
IPC分类号： D01F9/12 , B01J19/08 , B82Y40/00 , C01B31/00
CPC分类号： C01B31/00 , B82Y30/00 , B82Y40/00 , C01B32/00 , C01B32/174 , C01B32/176 , C01B2202/06 , D01F9/12 , Y10S977/752 , Y10S977/842 , Y10S977/847
摘要： A method of cutting, thinning, welding and chemically functionalizing multiwalled carbon nanotubes (CNTs) with carboxyl and allyl moieties, and altering the electrical properties of the CNT films by applying high current densities combined with air-exposure is developed and demonstrated. Such welded high-conductance CNT networks of functionalized CNTs could be useful for device and sensor applications, and may serve as high mechanical toughness mat fillers that are amenable to integration with nanocomposite matrices.
摘要翻译：开发并展示了通过与空气暴露结合使用高电流密度来切割，变薄，焊接和化学官能化具有羧基和烯丙基部分的多壁碳纳米管（CNT）以及改变CNT膜的电性能的方法。功能化CNT的这种焊接高电导CNT网络可用于器件和传感器应用，并且可以用作适于与纳米复合材料基体结合的高机械韧性垫填料。

7. 发明授权

US08154911B2 Memory device and method of writing data to a memory device 有权
标题翻译：存储器件和将数据写入存储器件的方法
公开(公告)号：US08154911B2
公开(公告)日：2012-04-10
申请号：US12762607
申请日：2010-04-19
申请人： Naveen Batra , Rajiv Kumar , Saurabh Agrawal
发明人： Naveen Batra , Rajiv Kumar , Saurabh Agrawal
IPC分类号： G11C11/00 , G11C8/00
CPC分类号： G11C7/12 , G11C8/08 , G11C11/413
摘要： A memory device includes bitlines, wordlines and a matrix of memory cells arranged in rows and columns. Each of the bitlines is electrically connected to memory cells in one of the columns. Each of the wordlines is electrically connected to memory cells in one of the rows. A bitline write voltage is applied to a first bitline. A wordline voltage is applied to a first wordline for writing data to a first memory cell connected to the first wordline and the first bitline. The first bitline and the second bitline are electrically connected for charge sharing between the first bitline and the second bitline. A predetermined time after electrically connecting the first bitline and the second bitline, the first and the second bitline are electrically disconnected and the bitline write voltage is applied to the second bitline. The wordline voltage is applied to a second wordline for writing data to a second memory cell connected to the second wordline and the second bitline.
摘要翻译：存储器件包括位线，字线和以行和列排列的存储器单元的矩阵。每个位线电连接到一列中的存储单元。每个字线电连接到其中一行中的存储单元。位线写入电压被施加到第一位线。将字线电压施加到第一字线，以将数据写入连接到第一字线和第一位线的第一存储器单元。第一位线和第二位线被电连接用于第一位线和第二位线之间的电荷共享。在电连接第一位线和第二位线之后的预定时间，第一和第二位线被电断开，并且位线写入电压被施加到第二位线。字线电压被施加到第二字线，用于将数据写入连接到第二字线和第二位线的第二存储器单元。

8. 发明申请

US20110149662A1 MEMORY DEVICE AND METHOD OF WRITING DATA TO A MEMORY DEVICE 有权
标题翻译：存储器件和将数据写入存储器件的方法
公开(公告)号：US20110149662A1
公开(公告)日：2011-06-23
申请号：US12762607
申请日：2010-04-19
申请人： Naveen BATRA , Rajiv Kumar , Saurabh Agrawal
发明人： Naveen BATRA , Rajiv Kumar , Saurabh Agrawal
IPC分类号： G11C7/00
CPC分类号： G11C7/12 , G11C8/08 , G11C11/413
摘要： A memory device includes bitlines, wordlines and a matrix of memory cells arranged in rows and columns. Each of the bitlines is electrically connected to memory cells in one of the columns. Each of the wordlines is electrically connected to memory cells in one of the rows. A bitline write voltage is applied to a first bitline. A wordline voltage is applied to a first wordline for writing data to a first memory cell connected to the first wordline and the first bitline. The first bitline and the second bitline are electrically connected for charge sharing between the first bitline and the second bitline. A predetermined time after electrically connecting the first bitline and the second bitline, the first and the second bitline are electrically disconnected and the bitline write voltage is applied to the second bitline. The wordline voltage is applied to a second wordline for writing data to a second memory cell connected to the second wordline and the second bitline.
摘要翻译：存储器件包括位线，字线和以行和列排列的存储器单元的矩阵。每个位线电连接到一列中的存储单元。每个字线电连接到其中一行中的存储单元。位线写入电压被施加到第一位线。将字线电压施加到第一字线，以将数据写入连接到第一字线和第一位线的第一存储器单元。第一位线和第二位线被电连接用于第一位线和第二位线之间的电荷共享。在电连接第一位线和第二位线之后的预定时间，第一和第二位线被电断开，并且位线写入电压被施加到第二位线。字线电压被施加到第二字线，用于将数据写入连接到第二字线和第二位线的第二存储器单元。

9. 发明申请

US20070035226A1 Carbon nanotube hybrid structures 审中-公开
标题翻译：碳纳米管混合结构
公开(公告)号：US20070035226A1
公开(公告)日：2007-02-15
申请号：US11384524
申请日：2006-03-21
申请人： Ramanath Ganapathiraman , Saurabh Agrawal
发明人： Ramanath Ganapathiraman , Saurabh Agrawal
IPC分类号： H01J1/00 , D01F9/12 , H01J1/02 , H01J19/06
CPC分类号： D01F9/127 , B81C1/00103 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/06 , C01B2202/08 , H01J2201/30469
摘要： Hybrid structures include aligned carbon nanotube bundles grown on curved surfaces such as micro sized or nano sized particles or bulk substrates having micro size or nano sized protrusions. The morphology of the hybrid structures can controlled by varying the size and packing of the particles or protrusions.
摘要翻译：杂化结构包括生长在诸如微尺寸或纳米尺寸的微粒或具有微尺寸或纳米尺寸突起的块体的弯曲表面上的排列的碳纳米管束。通过改变颗粒或突起的尺寸和包装可以控制混合结构的形态。

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