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1. 发明授权

US4714948A HEMT with epitaxial narrow bandgap source/drain contacts isolated from wide bandgap layer 失效
标题翻译：具有从宽带隙层隔离的外延窄带隙源极/漏极触点的HEMT
公开(公告)号：US4714948A
公开(公告)日：1987-12-22
申请号：US839826
申请日：1986-03-13
申请人： Takashi Mimura , Satoshi Hiyamizu
发明人： Takashi Mimura , Satoshi Hiyamizu
IPC分类号： H01L21/331 , H01L21/338 , H01L29/06 , H01L29/73 , H01L29/778 , H01L29/80 , H01L29/812 , H01L29/205
CPC分类号： H01L29/0653 , H01L29/7781 , H01L29/7787 , H01L29/80
摘要： The present invention is related to an improvement of a high-electron mobility transistor (HEMT) which has an undoped GaAs layer and an N-doped AlGaAs layer a heterojunction formed between the undoped GaAs layer and the N-doped AlGaAs layer, respectively a gate electrode on the N-doped AlGaAs layer, and an electron-storing layer formed in proximity to the heterojunction due to the difference in electron affinity between the undoped GaAs layer and the N-doped AlGaAs layer. The known HEMT has a disadvantage in that during the formation of the source and drain regions by means of, for example, thermal diffusion, the impurities of the N-doped AlGaAs layer may diffuse into the undoped GaAs layer through the heterojunction so that the mobility of the electrons in the electron-storing layer is lessened. This disadvantage is removed in the present invention by the provision of a conduction layer formed by the epitaxial growth of highly-doped GaAs. The known HEMT also has a disadvantage in that the source electrode or the drain electrode is electrically connected to the N-doped AlGaAs layer so that the electrons in this layer may lessen the mobility. This disadvantage is also eliminated in the present invention by the provision of an insulating layer. The heterojunction may be formed between Gallium Aluminum Arsenide and Gallium Arsenide, Gallium Aluminum Arsenide and Germanium, Gallium Arsenide and Germanium, Cadmium Telluride and Indium Antimonide, or Gallium Antimonide and Indium Arsenide.
摘要翻译：本发明涉及高电子迁移率晶体管（HEMT）的改进，该高电子迁移率晶体管（HEMT）具有未掺杂的GaAs层和N掺杂的AlGaAs层，在未掺杂的GaAs层和N掺杂的AlGaAs层之间形成异质结，分别为栅极由于未掺杂的GaAs层和N掺杂的AlGaAs层之间的电子亲和力的差异，在N掺杂的AlGaAs层上的电极以及形成在异质结附近的电子存储层。已知的HEMT的缺点在于，在通过例如热扩散形成源极和漏极区域期间，N掺杂的AlGaAs层的杂质可以通过异质结扩散到未掺杂的GaAs层中，使得迁移率的电子存储层中的电子减少。通过提供通过高掺杂GaAs的外延生长形成的导电层，在本发明中消除了这个缺点。已知的HEMT还具有以下缺点：源电极或漏电极与N掺杂的AlGaAs层电连接，使得该层中的电子可以降低迁移率。通过设置绝缘层，本发明也消除了这个缺陷。异质结可以在砷化镓铝和砷化镓，砷化镓铝和锗，砷化镓和锗，碲化镉和铟锑酸盐，或镓锑酸盐和砷化铟之间形成。

2. 发明授权

US5679179A Method of forming GaAs/AlGaAs hetero-structure and GaAs/AlGaAs hetero-structure obtained by the method 失效
标题翻译：通过该方法获得形成GaAs / AlGaAs异质结构和GaAs / AlGaAs异质结构的方法
公开(公告)号：US5679179A
公开(公告)日：1997-10-21
申请号：US523806
申请日：1995-09-05
申请人： Satoshi Hiyamizu , Satoshi Shimomura , Yasunori Okamoto
发明人： Satoshi Hiyamizu , Satoshi Shimomura , Yasunori Okamoto
IPC分类号： H01L29/12 , H01S5/32 , H01S5/323 , H01L29/04
CPC分类号： B82Y10/00 , H01L29/122 , H01S5/32308 , H01S5/3202 , H01S5/3203 , H01S5/32316 , Y10S117/902 , Y10S977/712
摘要： A method of forming GaAs/AlGaAs hetero-structure. The method includes the steps of preparing a GaAs substrate having a (411)A-oriented surface and setting the GaAs substrate inside a growth container with the (411)A surface being disposed as a surface to be deposited. The pressure inside the growth chamber is reduced and the GaAs substrate is heated up to a predetermined temperature to cause epitaxial growth of Ga, Al, As on the (411)A substrate and forming a GaAs/AlGaAs hetero-structure on the (411)A-oriented GaAs substrate.
摘要翻译：形成GaAs / AlGaAs异质结构的方法。该方法包括以下步骤：制备具有（411）A取向表面的GaAs衬底，并将GaAs衬底设置在生长容器内，其中（411）A表面被设置为待沉积的表面。生长室内部的压力降低，GaAs衬底被加热到预定温度，以使（411）A衬底上的Ga，Al，As外延生长并在（411）A衬底上形成GaAs / AlGaAs异质结构， A取向GaAs衬底。

3. 发明授权

US5951756A Method of forming GaAs/AlGaAs hetero-structure and GaAs/AlGaAs hetero-structure obtained by the method 失效
标题翻译：通过该方法获得形成GaAs / AlGaAs异质结构和GaAs / AlGaAs异质结构的方法
公开(公告)号：US5951756A
公开(公告)日：1999-09-14
申请号：US799830
申请日：1996-02-13
申请人： Satoshi Hiyamizu , Satoshi Shimomura , Yasunori Okamoto
发明人： Satoshi Hiyamizu , Satoshi Shimomura , Yasunori Okamoto
IPC分类号： H01L29/12 , H01S5/32 , H01S5/323 , C30B25/02
CPC分类号： B82Y10/00 , H01L29/122 , H01S5/32308 , H01S5/3202 , H01S5/3203 , H01S5/32316 , Y10S117/902 , Y10S977/712
摘要： A method of forming GaAs/AlGaAs hetero-structure. The method includes the steps of preparing a GaAs substrate having a (411)A-oriented surface and setting the GaAs substrate inside a growth container with the (411)A surface being disposed as a surface to be deposited. The pressure inside the growth chamber is reduced and the GaAs substrate is heated up to a predetermined temperature to cause epitaxial growth of Ga, Al, As on the (411)A substrate and forming a GaAs/AlGaAs hetero-structure on the (411)A-oriented GaAs substrate.
摘要翻译：形成GaAs / AlGaAs异质结构的方法。该方法包括以下步骤：制备具有（411）A取向表面的GaAs衬底，并将GaAs衬底设置在生长容器内，其中（411）A表面被设置为待沉积的表面。生长室内部的压力降低，GaAs衬底被加热到预定温度，以使（411）A衬底上的Ga，Al，As外延生长并在（411）A衬底上形成GaAs / AlGaAs异质结构， A取向GaAs衬底。

4. 发明授权

US4833508A High electron mobility device with intrinsic AlAs/GaAs superlattice separator region 失效
标题翻译：具有本征AlAs / GaAs超晶格分离器区域的高电子迁移率器件
公开(公告)号：US4833508A
公开(公告)日：1989-05-23
申请号：US131232
申请日：1987-12-07
申请人： Tomonori Ishikawa , Shigehiko Sasa , Satoshi Hiyamizu
发明人： Tomonori Ishikawa , Shigehiko Sasa , Satoshi Hiyamizu
IPC分类号： H01L29/812 , H01L21/338 , H01L29/205 , H01L29/36 , H01L29/76 , H01L29/778
CPC分类号： H01L29/7787 , H01L29/205 , H01L29/365
摘要： A field effect semiconductor device which utilizes a 2DEG and is composed of a semi-insulating GaAs substrate; an i-type GaAs active layer; a superlattice structure layer which comprises a first i-type AlAs thin layer, a GaAs thin layer doped with an Si atomic plane, and a second i-type AlAs thin layer, these thin layers forming a GaAs quantum well; and n-type AlGaAs layer; and electrodes for source, drain, and gate.
摘要翻译：一种利用2DEG并由半绝缘GaAs衬底构成的场效应半导体器件; i型GaAs有源层; 包含第一i型AlAs薄层，掺杂有Si原子面的GaAs薄层和第二i型AlAs薄层的超晶格结构层，这些薄层形成GaAs量子阱; 和n型AlGaAs层; 和源极，漏极和栅极的电极。

5. 发明授权

US4799088A High electron mobility single heterojunction semiconductor devices and methods for production thereof 失效
标题翻译：高电子迁移率单异质结半导体器件及其制造方法
公开(公告)号：US4799088A
公开(公告)日：1989-01-17
申请号：US286863
申请日：1981-07-27
申请人： Satoshi Hiyamizu , Toshio Fujii
发明人： Satoshi Hiyamizu , Toshio Fujii
IPC分类号： H01L21/203 , H01L29/778
CPC分类号： H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02631 , H01L29/7783
摘要： A high electron mobility single heterojunction semiconductor devices having a layer configuration comprising a N-type AlGaAs layer grown on an undoped GaAs layer grown on an undoped AlGaAs layer grown on a semiconductor substrate containing an impurity producing a deep level. The undoped AlGaAs layer has at least three functions including (a) a getter for the deep level impurity which may be diffused from the substrate during an annealing process, (b) a buffer improving the crystal condition of the undoped GaAs layer, and (c) a test layer grown for the purpose of predetermining the intensity of molecular or ion beams for each of Al, Ga, As and dopants e.g. Si. This allows annealing processes and ion implantation processes to be introduced to the method for production of this type of semiconductor devices without reducing the electron mobility thereof.
摘要翻译：一种高电子迁移率单异质结半导体器件，其具有包括生长在含有产生深度杂质的杂质的半导体衬底上生长的未掺杂的AlGaAs层上的未掺杂的GaAs层上生长的N型AlGaAs层的层状结构。未掺杂的AlGaAs层具有至少三种功能，包括（a）在退火过程中可能从衬底扩散的深层杂质的吸气剂，（b）改善未掺杂的GaAs层的晶体状态的缓冲液，和（c ）生长的测试层，用于预先确定Al，Ga，As和掺杂剂中的每一个的分子或离子束的强度，例如 Si。这允许将退火工艺和离子注入工艺引入到生产这种类型的半导体器件的方法中，而不降低其电子迁移率。

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