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1. 发明申请

US20110262679A1 GAS BARRIER FILM AND ORGANNIC DEVICE USING THE SAME 审中-公开
标题翻译：气体阻隔膜和使用其的有机装置
公开(公告)号：US20110262679A1
公开(公告)日：2011-10-27
申请号：US13083086
申请日：2011-04-08
申请人： KAZUFUMI AZUMA , Satoko Ueno , Masayasu Suzuki , Yoshiyuki Konishi , Shinichiro Ishida
发明人： KAZUFUMI AZUMA , Satoko Ueno , Masayasu Suzuki , Yoshiyuki Konishi , Shinichiro Ishida
IPC分类号： B32B3/02 , C01B21/068 , C23C16/513
CPC分类号： H01L51/5253 , C23C16/345 , C23C16/511 , H01L51/448 , Y10T428/23
摘要： A SiNx film as a barrier film is provided. The film is formed at a low process temperature, has a high water vapor barrier performance and a high light transmittance, and is useful for sealing of a substrate formed by a flexible organic material, such as a plastic substrate. A barrier film is formed by silicon nitride (SiNx) having an atom ratio [N/(Si+N)] indicating a ratio of nitrogen N to silicon Si in the range of 0.60 to 0.65, by using a surface wave plasma chemical vapor deposition (CVD) device.
摘要翻译：提供了作为阻挡膜的SiNx膜。该薄膜形成在低的工艺温度下，具有高的水蒸气阻隔性能和高透光率，并且可用于密封由柔性有机材料（例如塑料基材）形成的基材。通过使用表面波等离子体化学气相沉积法，通过氮化硅（SiNx）形成阻挡膜，该氮化硅（SiNx）具有表示氮N与硅Si的比例在0.60至0.65范围内的原子比[N /（Si + N）] （CVD）装置。

2. 发明申请

US20090135521A1 Protective film forming method 有权
标题翻译：保护膜成型方法
公开(公告)号：US20090135521A1
公开(公告)日：2009-05-28
申请号：US12232091
申请日：2008-09-10
申请人： Kunihiro Ueda , Hong Xin Fang , Dong Wang , Yoshiyuki Konishi , Satoko Ueno , Shigenobu Okada
发明人： Kunihiro Ueda , Hong Xin Fang , Dong Wang , Yoshiyuki Konishi , Satoko Ueno , Shigenobu Okada
IPC分类号： G11B5/127 , G11B5/60 , B05D5/00 , C23F1/02 , B05D3/06 , C23C14/34
CPC分类号： G11B5/3106 , C23C16/0272 , C23C16/26 , G11B5/3173 , G11B5/40 , G11B5/6082
摘要： To provide a high-quality protection target by forming a protective film that is thin and excellent in corrosion resistance. Provided is a protective film forming method for forming a protective film at least on a surface of a protection target. The method comprises: a base film forming step for forming a base film on the surface of the protection target; and a DLC film forming step for forming a diamond-like carbon film on the base film. The base film forming step forms the base film on the surface of the protection target for a plurality of times by repeating a process of depositing the base film in a prescribed thickness and eliminating a part of or a whole part of the base film. Further, the method comprises, before the DLC film forming step, an insulating layer forming step for forming an insulating layer on the surface of the base film on which the diamond-like carbon film is to be formed.
摘要翻译：通过形成薄且耐腐蚀性优异的保护膜来提供高质量的保护目标。提供了至少在保护对象的表面上形成保护膜的保护膜形成方法。该方法包括：在保护目标表面上形成基膜的基膜形成步骤; 以及在基膜上形成类金刚石碳膜的DLC膜形成工序。基底膜形成步骤通过重复以预定厚度沉积基膜的过程，并且去除基膜的一部分或全部而在保护对象的表面上形成基膜多次。此外，该方法包括在DLC膜形成步骤之前，在要形成类金刚石碳膜的基膜的表面上形成绝缘层的绝缘层形成步骤。

3. 发明授权

US08310788B2 Protective film forming method 有权
标题翻译：保护膜成型方法
公开(公告)号：US08310788B2
公开(公告)日：2012-11-13
申请号：US12232091
申请日：2008-09-10
申请人： Kunihiro Ueda , Hong Xin Fang , Dong Wang , Yoshiyuki Konishi , Satoko Ueno , Shigenobu Okada
发明人： Kunihiro Ueda , Hong Xin Fang , Dong Wang , Yoshiyuki Konishi , Satoko Ueno , Shigenobu Okada
IPC分类号： G11B5/39
CPC分类号： G11B5/3106 , C23C16/0272 , C23C16/26 , G11B5/3173 , G11B5/40 , G11B5/6082
摘要： To provide a high-quality protection target by forming a protective film that is thin and excellent in corrosion resistance. Provided is a protective film forming method for forming a protective film at least on a surface of a protection target. The method comprises: a base film forming step for forming a base film on the surface of the protection target; and a DLC film forming step for forming a diamond-like carbon film on the base film. The base film forming step forms the base film on the surface of the protection target for a plurality of times by repeating a process of depositing the base film in a prescribed thickness and eliminating a part of or a whole part of the base film. Further, the method comprises, before the DLC film forming step, an insulating layer forming step for forming an insulating layer on the surface of the base film on which the diamond-like carbon film is to be formed.
摘要翻译：通过形成薄且耐腐蚀性优异的保护膜来提供高质量的保护目标。提供了至少在保护对象的表面上形成保护膜的保护膜形成方法。该方法包括：在保护目标表面上形成基膜的基膜形成步骤; 以及在基膜上形成类金刚石碳膜的DLC膜形成工序。基底膜形成步骤通过重复以预定厚度沉积基膜的过程，并且去除基膜的一部分或全部而在保护对象的表面上形成基膜多次。此外，该方法包括在DLC膜形成步骤之前，在要形成类金刚石碳膜的基膜的表面上形成绝缘层的绝缘层形成步骤。

4. 发明申请

US20110172416A1 AMIDINE DERIVATIVE 审中-公开
标题翻译：氨基衍生物
公开(公告)号：US20110172416A1
公开(公告)日：2011-07-14
申请号：US13004089
申请日：2011-01-11
申请人： Kayo MATSUMOTO , Masayuki Sugiki , Masaru Takayanagi , Yasuko Nogi , Shinya Taniguchi , Satoko Ueno , Yoshiaki Shirai
发明人： Kayo MATSUMOTO , Masayuki Sugiki , Masaru Takayanagi , Yasuko Nogi , Shinya Taniguchi , Satoko Ueno , Yoshiaki Shirai
IPC分类号： C07D401/14 , C07D401/12
CPC分类号： C07D217/06 , A61K31/00 , C07D401/12 , C07D401/14
摘要： Provision of a novel amidine derivative or a pharmaceutically acceptable salt thereof having an activated blood coagulation factor X-inhibitory activity. A compound represented by the formula (I) wherein each symbol is as defined above, or a pharmaceutically acceptable salt thereof.
摘要翻译：提供具有活化的凝血因子X抑制活性的新型脒衍生物或其药学上可接受的盐。由式（I）表示的化合物，其中每个符号如上所定义，或其药学上可接受的盐。

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