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    • 2. 发明授权
    • Apparatus for treating thin film and method of treating thin film
    • 薄膜处理设备及薄膜处理方法
    • US09200369B2
    • 2015-12-01
    • US11286602
    • 2005-11-23
    • Jong-Chul LeeSang-Hyuck Park
    • Jong-Chul LeeSang-Hyuck Park
    • C23C16/48C23C16/04C23C16/455
    • C23C16/483C23C16/047C23C16/45517
    • An apparatus and method for treating a thin film on a substrate is presented. The substrate is loaded on a fixed stage adapted to receive the substrate. An energy source is aligned through a space in a gas shield so as to face a thin film on the substrate to be repaired after the substrate is loaded. A protective insulating layer is removed by radiation from the energy source, a reaction gas is supplied to the space, and an open and/or short circuit in the thin film is repaired. The energy source and/or gas shield is moved during the repair, rather than the stage. If the energy source and gas shield are both moved, they are moved in opposite directions, either independently or dependent on each other, by first and second operating units, respectively.
    • 提出了一种用于处理衬底上薄膜的设备和方法。 衬底被装载在适于接收衬底的固定台上。 能量源通过气体屏蔽中的空间对准,以便在衬底被加载之后面对要修复的衬底上的薄膜。 通过来自能量源的辐射来去除保护性绝缘层,反应气体被供应到该空间,并且修复薄膜中的开路和/或短路。 能量源和/或气体屏蔽在修复期间而不是阶段移动。 如果能量源和气体屏蔽都被移动,则它们分别通过第一和第二操作单元独立地或相互依赖地沿相反方向移动。