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1. 发明授权

US08716113B2 Crystalline semiconductor film manufacturing method and crystalline semiconductor film manufacturing apparatus 有权
标题翻译：晶体半导体膜制造方法和结晶半导体膜制造装置
公开(公告)号：US08716113B2
公开(公告)日：2014-05-06
申请号：US13295317
申请日：2011-11-14
申请人： Toru Saito , Hiroshi Yoshioka , Sadayoshi Hotta
发明人： Toru Saito , Hiroshi Yoshioka , Sadayoshi Hotta
IPC分类号： H01L21/20 , H01L21/36 , H01L21/02
CPC分类号： H01L21/02675 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285
摘要： A semiconductor film manufacturing method includes: forming a metal layer above the substrate; forming a gate electrode in each of pixels by patterning a metal layer; forming a gate insulating firm on the gate electrode; forming an amorphous semiconductor film on the gate insulating film; and crystallizing the amorphous semiconductor film by irradiating the amorphous semiconductor film with a laser beam, and a laser irradiation width of the laser beam corresponds to n times a width of each pixel (n is an integer of 2 or above), a laser energy intensity is higher in one end portion of the laser irradiation width than in the other end portion, and in the crystallizing, the laser energy intensity of the laser beam is inverted in increments of n pixels, alternately between one of the end portions of the laser irradiation width of the laser beam and the other end portion.
摘要翻译：半导体膜制造方法包括：在基板上形成金属层; 通过图案化金属层在每个像素中形成栅电极; 在栅电极上形成栅绝缘体; 在栅极绝缘膜上形成非晶半导体膜; 并且通过用激光束照射非晶半导体膜来结晶非晶半导体膜，并且激光束的激光照射宽度对应于每个像素的宽度的n倍（n为2以上的整数），激光能量强度在激光照射宽度的一个端部比在另一端部高，并且在结晶中，激光束的激光能量强度以n个像素为增量反转，交替地在激光照射的一个端部之间激光束的宽度和另一端部。

2. 发明授权

US08642379B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08642379B2
公开(公告)日：2014-02-04
申请号：US12524023
申请日：2008-04-03
申请人： Sadayoshi Hotta , Jeremy Henley Burroughes , Gregory Lewis Whiting
发明人： Sadayoshi Hotta , Jeremy Henley Burroughes , Gregory Lewis Whiting
IPC分类号： H01L51/30
CPC分类号： H01L27/3274 , H01L21/31683 , H01L51/0541 , H01L51/105 , H01L51/5206
摘要： A method of making a top-gate organic thin film transistor, comprising forming source and drain contacts on a substrate; oxidizing portions of the source and drain contacts; depositing an organic semiconductor layer to form a bridge between the oxidized portions of the source and drain contacts; depositing a gate insulating layer over the organic semiconductor layer; and forming a gate electrode over the gate insulating layer.
摘要翻译：一种制造顶栅有机薄膜晶体管的方法，包括在衬底上形成源极和漏极接触; 氧化源极和漏极接触部分; 沉积有机半导体层以在源极和漏极触点的氧化部分之间形成桥; 在所述有机半导体层上沉积栅极绝缘层; 以及在所述栅绝缘层上形成栅电极。

3. 发明申请

US20120032180A1 THIN-FILM TRANSISTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管器件及其制造方法
公开(公告)号：US20120032180A1
公开(公告)日：2012-02-09
申请号：US13274546
申请日：2011-10-17
申请人： Hisao NAGAI , Sadayoshi HOTTA , Genshiro KAWACHI
发明人： Hisao NAGAI , Sadayoshi HOTTA , Genshiro KAWACHI
IPC分类号： H01L33/08 , H01L21/336
CPC分类号： H01L29/78636 , H01L29/41733 , H01L29/66757 , H01L29/78666 , H01L29/78675 , H01L29/78696
摘要： In the thin-film transistor device: the stacked thickness of either a source electrode or a drain electrode and a corresponding one of silicon layers is the same value or a value close to the same value as the stacked thickness of a first channel layer and a second channel layer; the stacked thickness of the first channel layer and the second channel layer is the same in a region between the source electrode and the drain electrode and above the source electrode and the drain electrode; the first channel layer and the second channel layer are sunken in the region between the source electrode and the drain electrode, following a shape between the source electrode and the drain electrode; and the gate electrode has one region overlapping with the source electrode and an other region overlapping with the drain electrode.
摘要翻译：在薄膜晶体管器件中：源电极或漏电极以及相应的一层硅层的层叠厚度与第一沟道层和第二沟道层的层叠厚度相同的值或接近于相同值的值第二通道层; 第一沟道层和第二沟道层的堆叠厚度在源极和漏极之间以及源电极和漏电极之间的区域中相同; 第一沟道层和第二沟道层在源极和漏极之间的区域中凹陷，源于源极和漏极之间的形状; 并且栅电极具有与源电极重叠的一个区域和与漏电极重叠的其他区域。

4. 发明申请

US20100203663A1 Organic Thin Film Transistors, Organic Light-emissive Devices and Organic Light-emissive Displays 有权
标题翻译：有机薄膜晶体管，有机发光器件和有机发光显示器
公开(公告)号：US20100203663A1
公开(公告)日：2010-08-12
申请号：US12664015
申请日：2008-06-13
申请人： Sadayoshi Hotta , Jonathan Halls , Gregory Whiting
发明人： Sadayoshi Hotta , Jonathan Halls , Gregory Whiting
IPC分类号： H01L51/56 , H01L51/40
CPC分类号： H01L51/0545 , H01L51/0005 , H01L51/105
摘要： A method of manufacturing an organic thin film transistor, the method comprising: depositing a source and drain electrode; forming a thin self-assembled layer of material on the source and drain electrodes, the thin self-assembled layer of material comprising a dopant moiety for chemically doping an organic semi-conductive material by accepting or donating charge and a separate attachment moiety bonded to the dopant moiety and selectively bonded to the source and drain electrodes; and depositing a solution comprising a solvent and an organic semi-conductive material in a channel region between the source and drain electrode.
摘要翻译：一种制造有机薄膜晶体管的方法，所述方法包括：沉积源极和漏极; 在源电极和漏电极上形成薄的自组装材料层，薄的自组装材料层包括掺杂剂部分，用于通过接受或提供电荷来化学掺杂有机半导体材料，以及分离的附着部分键合到掺杂剂部分并且选择性地键合到源极和漏极; 以及在源极和漏极之间的沟道区中沉积包含溶剂和有机半导体材料的溶液。

5. 发明授权

US5303072A Liquid crystal display device 失效
标题翻译：液晶显示装置
公开(公告)号：US5303072A
公开(公告)日：1994-04-12
申请号：US722550
申请日：1991-06-26
申请人： Mamoru Takeda , Sadayoshi Hotta , Ichiro Yamashita , Tatsuhiko Tamura , Yoneharu Takubo
发明人： Mamoru Takeda , Sadayoshi Hotta , Ichiro Yamashita , Tatsuhiko Tamura , Yoneharu Takubo
IPC分类号： G02F1/1362 , G09G3/36 , G02F1/133
CPC分类号： G02F1/13624 , G09G3/3648 , G09G3/3659 , G02F1/136213 , G09G2300/0809 , G09G2310/0205 , G09G2330/08
摘要： An improved arrangement of a liquid crystal display device is provided in which the redundancy of a known but unwanted TFT (thin film transistor) defect is suppressed so that the yield per finished liquid crystal display device product can be increased without deterioration in the picture quality. Each pixel of the liquid crystal display device arranged at an intersection of one of scanning lines and one of signal lines is provided with two or three TFTs and also, a storage capacitor which is formed of a portion of a gate insulating layer and is sandwiched between its electrode and a preceding scanning line in the previous row using no extra masking procedure. The source, drain and gate electrodes of both the first and third TFTs are respectively coupled to the same signal line, the electrode of the same pixel and the adjacent scanning lines. The gate, source and drain electrodes of the second TFT are respectively coupled to the same scanning line to which the gate electrode of the first TFT is coupled, the electrode of the same pixel and the electrode of a succeeding pixel provided on the opposite side of the scanning line with respect to the same pixel. The arrangement also has a scanning driver circuit capable of activating two scanning lines at the same time for a sequential one-by-one scanning operation, whereby no fault in a reproduced image will be perceived in spite of the presence of a defective TFT.
摘要翻译：提供了一种液晶显示装置的改进布置，其中已知但不期望的TFT（薄膜晶体管）缺陷的冗余被抑制，使得可以在不降低图像质量的情况下提高每一个完成的液晶显示装置的产量。布置在扫描线和信号线之一的交点处的液晶显示装置的每个像素都设置有两个或三个TFT，以及由栅极绝缘层的一部分形成并夹在其电极和前一行中的前一扫描线不使用额外的屏蔽程序。第一和第三TFT的源极，漏极和栅极电极分别耦合到相同的信号线，相同像素的电极和相邻的扫描线。第二TFT的栅极，源极和漏极电极分别耦合到与第一TFT的栅电极耦合的相同的扫描线，相同像素的电极和设置在第二TFT的相反的一侧的后续像素的电极相对于相同像素的扫描线。该布置还具有能够同时激活两条扫描线以进行逐次扫描操作的扫描驱动电路，由此即使存在有缺陷的TFT，也不会感觉到再现图像中的故障。

6. 发明授权

US09330925B2 Thin-film transistor, manufacturing method thereof, and electronic apparatus using thin-film transistor 有权
标题翻译：薄膜晶体管及其制造方法以及使用薄膜晶体管的电子设备
公开(公告)号：US09330925B2
公开(公告)日：2016-05-03
申请号：US12756601
申请日：2010-04-08
申请人： Tohru Saitoh , Takaaki Ukeda , Kazunori Komori , Sadayoshi Hotta
发明人： Tohru Saitoh , Takaaki Ukeda , Kazunori Komori , Sadayoshi Hotta
IPC分类号： H01L29/786 , H01L21/22 , H01L21/285 , H01L29/45 , H01L29/66 , H01L27/12
CPC分类号： H01L21/28512 , H01L27/1277 , H01L29/458 , H01L29/66765
摘要： A thin-film transistor includes a substrate, a gate electrode over the substrate, an insulating layer over the gate electrode, and a semiconductor layer over the insulating layer. The semiconductor layer includes a channel region, a source region, and a drain region. A source electrode is over the source region, and a drain electrode is over the drain region. The source electrode and the drain electrode each comprise Ni and a metal other than Ni. The channel region, the source region, and the drain region comprise at least one of a polycrystalline silicon that is formed by crystallizing an amorphous silicon layer by thermally diffusing the Ni in the source electrode and the drain electrode into the semiconductor layer and a microcrystalline silicon that is formed by crystallizing an amorphous silicon layer by thermally diffusing the Ni in the source electrode and the drain electrode into the semiconductor layer.
摘要翻译：薄膜晶体管包括衬底，衬底上的栅电极，栅极上的绝缘层，以及绝缘层上的半导体层。半导体层包括沟道区，源极区和漏极区。源电极在源极区域上方，漏电极在漏极区域的上方。源极和漏极各自包含Ni和除了Ni之外的金属。沟道区域，源极区域和漏极区域包括通过将源电极和漏电极中的Ni热扩散到半导体层中而形成非晶硅层而形成的多晶硅中的至少一种，以及微晶硅其通过使源电极和漏电极中的Ni热扩散到半导体层中而使非晶硅层结晶而形成。

7. 发明申请

US20100320467A1 THIN-FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE USING A THIN-FILM TRANSISTOR 有权
标题翻译：薄膜晶体管，其制造方法和使用薄膜晶体管的电子器件
公开(公告)号：US20100320467A1
公开(公告)日：2010-12-23
申请号：US12742137
申请日：2008-11-14
申请人： Takaaki Ukeda , Tohru Saitoh , Kazunori Komori , Sadayoshi Hotta
发明人： Takaaki Ukeda , Tohru Saitoh , Kazunori Komori , Sadayoshi Hotta
IPC分类号： H01L33/00 , H01L21/336 , H01L29/786
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L29/66757
摘要： Disclosed is a method that includes: forming a gate electrode on a substrate, then forming an insulation layer so as to completely cover the gate electrode, thereafter forming a semiconductor layer on the insulation layer, and then forming a crystallization-inducing metal layer on the semiconductor layer; removing the part of at least the crystallization-inducing metal layer that is over a channel region of the semiconductor layer; forming source and drain electrodes at a location which is over source and drain regions respectively located at opposite sides with respect to the channel region of the semiconductor layer and is above the crystallization-inducing metal layer; and heating the crystallization-inducing metal layer so as to form a silicide layer of a crystallization-inducing metal.
摘要翻译：公开了一种方法，其包括：在基板上形成栅电极，然后形成绝缘层，以完全覆盖栅电极，然后在绝缘层上形成半导体层，然后在其上形成结晶诱导金属层半导体层; 去除所述半导体层的沟道区域上的至少所述结晶诱导金属层的一部分; 在源极和漏极区域分别位于相对于半导体层的沟道区的相对侧并位于结晶诱导金属层之上的位置处形成源极和漏极; 并加热结晶诱导金属层，以形成结晶诱导金属的硅化物层。

8. 发明申请

US20090101893A1 Organic Thin Film Transistors 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US20090101893A1
公开(公告)日：2009-04-23
申请号：US12143676
申请日：2008-06-20
申请人： Jonathan J. Halls , Craig Murphy , Gregory Whiting , Sadayoshi Hotta
发明人： Jonathan J. Halls , Craig Murphy , Gregory Whiting , Sadayoshi Hotta
IPC分类号： H01L51/40 , H01L51/10
CPC分类号： H01L51/0516 , H01L51/0541 , H01L51/0545 , H01L51/0558
摘要： A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.
摘要翻译：一种形成有机薄膜晶体管的方法，该晶体管包括其间具有沟道区的源极和漏极，栅电极，设置在源电极和漏电极之间的电介质层和栅电极，以及设置在至少沟道区中的有机半导体在所述源极和漏极之间，所述方法包括：在所述有机半导体沉积之前，在所述沟道区中的结晶部位的表面接种; 以及将有机半导体沉积到接种的表面上，由此有机半导体在结晶位置处结晶，形成沟道区中的晶畴。

9. 发明授权

US5193017A Reflective-type active matrix liquid crystal display device 失效
标题翻译：反射型有源矩阵液晶显示器件
公开(公告)号：US5193017A
公开(公告)日：1993-03-09
申请号：US638536
申请日：1991-01-08
申请人： Hiroshi Iwai , Yoneharu Takubo , Sadayoshi Hotta
发明人： Hiroshi Iwai , Yoneharu Takubo , Sadayoshi Hotta
IPC分类号： G02F1/136 , G02F1/1335 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L29/78 , H01L29/786
CPC分类号： G02F1/136209 , G02F1/133512 , G02F1/136213 , G02F2202/103
摘要： An active matrix liquid crystal display device employing a thin film transistor (TFT) system includes a semiconductor of each TFT which is smaller in width than a gate bus electrode and is arranged on the gate bus electrode, and a drain electrode of the TFT is formed as a reflective pixel electrode thereby providing a light diffusion effect.

10. 发明授权

US5144462A Liquid crystal projection color display apparatus having microlens arrays with controllable refractive power 失效
$Liquid crystal projection color display apparatus having microlens arrays with controllable refractive power$
标题翻译：液晶投影彩色显示装置，具有可控制反射功率的微阵列
公开(公告)号：US5144462A
公开(公告)日：1992-09-01
申请号：US620883
申请日：1990-11-29
申请人： Akira Otsuka , Shin-Ichiro Ishihara , Yoshito Miyatake , Sadayoshi Hotta
发明人： Akira Otsuka , Shin-Ichiro Ishihara , Yoshito Miyatake , Sadayoshi Hotta
IPC分类号： G02F1/133 , G02F1/13 , G03B21/00 , G09F9/00 , H04N9/31
CPC分类号： H04N9/3105 , H04N9/3152
摘要： In a liquid crystal projection color display apparatus having three liquid crystal display devices used for red, green and blue light, each liquid crystal display device has a liquid crystal display panel and a microlens array disposed on the light-source side or the light-source and screen sides of the liquid crystal display panel. The microlens array has a controllable refractive power which is controlled by applying an electrtical power thereto. An electrical voltage is applied between transparent electrodes formed on both surfaces of a microlens array so that the refractive power of the microlens array can be made a value adapted to suit the corresponding one of red, green and blue light.

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