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1. 发明申请

WO2006004863A1 SIDE SPRING MICRO-MIRROR 审中-公开
标题翻译：侧面微镜
公开(公告)号：WO2006004863A1
公开(公告)日：2006-01-12
申请号：PCT/US2005/023165
申请日：2005-06-30
申请人： NORTHROP GRUMMAN CORPORATION , NATHANSON, Harvey C. , HOWELL, Robert S. , STORASKA, Garrett S. , GOODELL, John B. , VANCAMPEN, Stephen D.
发明人： NATHANSON, Harvey C. , HOWELL, Robert S. , STORASKA, Garrett S. , GOODELL, John B. , VANCAMPEN, Stephen D.
IPC分类号： G02B26/00
CPC分类号： G02B26/0841
摘要： A micro-electrical mechanical system (MEMS) mirror assembly including an array of micro-mirrors formed on a substrate and having springs on one side and which angularly tilt between ON and OFF states in response to an electrostatic force generated by a voltage applied to an electrode located on the substrate. At least one, but preferably two springs in the form of two thin strips of metal attach to post(s) at the side edge of the mirror and act as springs which provide a restoring force when the mirror is tilted between an OFF state which occurs when the mirror is flat relative to the substrate with no voltage applied, and in the ON state when the mirror is tilted when a voltage is applied.
摘要翻译：一种微机电系统（MEMS）反射镜组件，包括形成在基板上的微反射镜阵列，并且在一侧具有弹簧，并且响应于施加到一个电压的电压产生的静电力而在ON和OFF状态之间成角度地倾斜电极位于基板上。至少一个，但最好是两个金属条带形式的两个弹簧，在镜子的侧边缘附着到柱上，并且当弹簧在镜子在发生的OFF状态之间倾斜时提供恢复力当反射镜相对于没有施加电压的基板是平坦的，并且当施加电压时镜子倾斜时处于导通状态。

2. 发明申请

WO2007038177A2 METHOD FOR FABRICATING NANOCOILS 审中-公开
标题翻译：制备纳米微粒的方法
公开(公告)号：WO2007038177A2
公开(公告)日：2007-04-05
申请号：PCT/US2006036757
申请日：2006-09-21
申请人： NORTHROP GRUMMAN CORP , STORASKA GARRETT A , HOWELL ROBERT S
发明人： STORASKA GARRETT A , HOWELL ROBERT S
IPC分类号： G02B6/26
CPC分类号： H01L27/1203 , B81C1/0019 , B82Y10/00 , B82Y30/00 , H01F41/041 , H01L21/84 , H01L27/10
摘要： A method for fabricating nanocoils and improved nanocoils fabricated therefrom. Embodiments of the method utilizing deep reactive ion etching (DRIE). A method for fabricating nanocoils includes providing a silicon-on-insulator (SOI) wafer, in which SOI wafer includes buried oxide layer, patterning one or more devices into a layer of silicon on top of the buried oxide layer, depositing tensile stressed nitride layer on the top silicon layer, patterning coiling arm structure on top silicon layer, patterning an overlapping etch window mask on bottom side of SOI wafer using, in which patterning overlapping etch window mask removes SOI wafer and exposes buried oxide layer in width greater than coiling arm structure, and releasing coiling arm structure so that coiling arm coils to form nanocoil. In embodiments, DRIE is utilized to pattern the overlapping etch window mask.
摘要翻译：一种用于制造纳米线和由其制造的改进的纳米薄膜的方法。利用深反应离子蚀刻（DRIE）的方法的实施例。制造纳米线的方法包括提供绝缘体上硅（SOI）晶片，其中SOI晶片包括掩埋氧化物层，将一个或多个器件图案化成掩埋氧化物层顶部的硅层，沉积拉应力氮化物层在顶层硅层上，在顶部硅层上图案化卷取臂结构，在SOI晶片的底侧上构图重叠的蚀刻窗口掩模，其中图案化重叠的蚀刻窗口掩模移除SOI晶片并暴露出大于卷取臂的宽度的掩埋氧化物层结构和释放卷取臂结构，使卷绕臂线圈形成纳米油。在实施例中，DRIE用于对重叠的蚀刻窗口掩模进行图案化。

3. 发明申请

WO2005114636A3 PROJECTOR PEN IMAGE STABILIZATION SYSTEM 审中-公开
标题翻译：投影笔图像稳定系统
公开(公告)号：WO2005114636A3
公开(公告)日：2006-09-14
申请号：PCT/US2005016663
申请日：2005-05-12
申请人： NORTHROP GRUMMAN CORP , ADAMS CHARLES R , NATHANSON HARVEY C , HOWELL ROBERT S , STORASKA GARRETT A , HALL WILLIAM E
发明人： ADAMS CHARLES R , NATHANSON HARVEY C , HOWELL ROBERT S , STORASKA GARRETT A , HALL WILLIAM E
IPC分类号： G09G5/00 , G09G1/00 , G09G3/22 , G09G3/28 , H04N5/74 , H04N17/00
CPC分类号： H04N9/3185 , H04N5/74 , H04N9/3194
摘要： A high resolution pen-sized projector (20) for controlling the position and size of an image generated by a closed loop control system (16) consists of four major system components (22, 24, 26, 28) including: a virtual VGA display (10) located inside of a XGA display (12), a position acquisition system, a displacement compensating control system to determine correct position of the VGA display (10) inside of the XGA display (12), and a dark display area of the background portion of the XGA display (12).
摘要翻译：用于控制由闭环控制系统（16）产生的图像的位置和尺寸的高分辨率笔式投影仪（20）由四个主要系统组件（22,24,26,28）组成，包括：虚拟VGA显示器（10）位于XGA显示器（12）的内部，位置获取系统，位移补偿控制系统，用于确定XGA显示器（12）内的VGA显示器（10）的正确位置，以及黑色显示区域 XGA显示器的背景部分（12）。

4. 发明申请

WO2008121383A2 CURLED SEMICONDUCTOR TRANSISTOR 审中-公开
标题翻译：弯曲半导体晶体管
公开(公告)号：WO2008121383A2
公开(公告)日：2008-10-09
申请号：PCT/US2008/004162
申请日：2008-03-31
申请人： NORTHROP GRUMMAN SYSTEMS CORPORATION , STORASKA, Garrett, A. , HOWELL, Robert, S. , NATHANSON, Harvey, C. , HOPWOOD, Francis, William
发明人： STORASKA, Garrett, A. , HOWELL, Robert, S. , NATHANSON, Harvey, C. , HOPWOOD, Francis, William
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/84 , H01L27/1203 , H01L29/0657 , H01L29/78603 , H01L29/78696
摘要： A curled transistor comprises a coiled semiconductor substrate having a plurality of concentrically curled layers. Source and drain regions are configured on a portion of the coiled semiconductor substrate, and a gate dielectric is positioned between the source and drain regions. A first set of metallic contacts electrically couple to the source region on the coiled semiconductor substrate and a second set of metallic contacts electrically couple to the drain region on the coiled semiconductor substrate.
摘要翻译：卷曲晶体管包括具有多个同心卷曲层的螺旋半导体衬底。源极和漏极区域被配置在线圈化的半导体衬底的一部分上，并且栅极电介质位于源极和漏极区域之间。第一组金属触点电耦合到卷绕的半导体衬底上的源极区域，以及第二组金属触点，电耦合到线圈化的半导体衬底上的漏极区域。

5. 发明申请

WO2007038177A3 METHOD FOR FABRICATING NANOCOILS 审中-公开
公开(公告)号：WO2007038177A3
公开(公告)日：2007-04-05
申请号：PCT/US2006/036757
申请日：2006-09-21
申请人： NORTHROP GRUMMAN SYSTEMS CORPORATION , STORASKA, Garrett, A. , HOWELL, Robert, S.
发明人： STORASKA, Garrett, A. , HOWELL, Robert, S.
IPC分类号： D01F9/12 , B82B1/00 , B82B3/00
摘要： A method for fabricating nanocoils and improved nanocoils fabricated therefrom. Embodiments of the method utilizing deep reactive ion etching (DRIE). A method for fabricating nanocoils includes providing a silicon-on-insulator (SOI) wafer, in which SOI wafer includes buried oxide layer, patterning one or more devices into a layer of silicon on top of the buried oxide layer, depositing tensile stressed nitride layer on the top silicon layer, patterning coiling arm structure on top silicon layer, patterning an overlapping etch window mask on bottom side of SOI wafer using, in which patterning overlapping etch window mask removes SOI wafer and exposes buried oxide layer in width greater than coiling arm structure, and releasing coiling arm structure so that coiling arm coils to form nanocoil. In embodiments, DRIE is utilized to pattern the overlapping etch window mask.

6. 发明申请

WO2005077002A2 POCKET-PEN ULTRA-HIGH RESOLUTION MEMS PROJECTION DISPLAY IN COMBINATION WITH ON-AXIS CCD IMAGE CAPTURE SYSTEM INCLUDING MEANS FOR PERMITTING 3-D IMAGING 审中-公开
标题翻译： POCKET-PEN超高分辨率MEMS投影显示器与ONSIS CCD图像捕获系统组合，包括用于允许3-D成像的手段
公开(公告)号：WO2005077002A2
公开(公告)日：2005-08-25
申请号：PCT/US2005/003867
申请日：2005-02-09
申请人： NORTHROP GRUMMAN CORPORATION , NATHANSON, Harvey, C. , HOWELL, Robert, S. , SAXENA, Ragini , STORASKA, Garrett, A.
发明人： NATHANSON, Harvey, C. , HOWELL, Robert, S. , SAXENA, Ragini , STORASKA, Garrett, A.
IPC分类号： G03B17/17 , G03B17/48 , G03B21/00 , H04N5/222
CPC分类号： G03B17/48 , G03B17/17 , G03B21/005 , H04N5/2251 , H04N9/3111 , H04N9/3176
摘要： A small portable "pocket pen size" projector/image grabber device for allowing an individual to gather, share and exploit information in a projected format in real time, day or night, with other individuals on demand. An ultra high density MEMS mirror display array provides a 1024 x 768 line projection display. An on axis 512 x 384 color CCD imager is also included resulting in a digitally-aligned image capture and overlay display capability. A sequentially addressed three color chip laser and low cost plastic optics provides full color high resolution bright displays for group viewing. 3-D color imaging is also provided by a binocular attachment to the device which permits the capturing of three-dimentional imagery.
摘要翻译：一个小便携式“口袋笔尺寸”投影仪/图像抓取设备，用于允许个人按需要实时收集，共享和利用实时，白天或晚上的预测格式的信息。超高密度MEMS镜面显示阵列提供1024×768行投影显示。轴512 x 384彩色CCD成像器也包括在内，导致数字对齐的图像捕获和叠加显示功能。顺序寻址的三色芯片激光器和低成本塑料光学器件提供全色高分辨率亮度显示器，用于组观察。 3-D彩色成像还通过双眼连接器提供给设备，允许捕获三维图像。

7. 发明申请

WO2008121383A3 CURLED SEMICONDUCTOR TRANSISTOR 审中-公开
公开(公告)号：WO2008121383A3
公开(公告)日：2008-12-11
申请号：PCT/US2008004162
申请日：2008-03-31
申请人： NORTHROP GRUMMAN SYSTEMS CORP , STORASKA GARRETT A , HOWELL ROBERT S , NATHANSON HARVEY C , HOPWOOD FRANCIS WILLIAM
发明人： STORASKA GARRETT A , HOWELL ROBERT S , NATHANSON HARVEY C , HOPWOOD FRANCIS WILLIAM
IPC分类号： H01L29/78 , H01L21/336 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： H01L21/84 , H01L27/1203 , H01L29/0657 , H01L29/78603 , H01L29/78696
摘要： A curled transistor comprises a coiled semiconductor substrate having a plurality of concentrically curled layers. Source and drain regions are configured on a portion of the coiled semiconductor substrate, and a gate dielectric is positioned between the source and drain regions. A first set of metallic contacts electrically couple to the source region on the coiled semiconductor substrate and a second set of metallic contacts electrically couple to the drain region on the coiled semiconductor substrate.
摘要翻译：卷曲晶体管包括具有多个同心卷曲层的卷绕半导体衬底。源极和漏极区域被配置在卷绕的半导体衬底的一部分上，并且栅极电介质位于源极和漏极区域之间。第一组金属触点电耦合到卷绕的半导体衬底上的源极区域，并且第二组金属触点电耦合到卷绕的半导体衬底上的漏极区域。

8. 发明申请

WO2008088831A3 COILED CIRCUIT DEVICE WITH ACTIVE CIRCUITRY AND METHODS FOR MAKING THE SAME 审中-公开
公开(公告)号：WO2008088831A3
公开(公告)日：2008-07-24
申请号：PCT/US2008/000582
申请日：2008-01-17
申请人： NORTHROP GRUMMAN SYSTEMS CORPORATION , SMITH, Joseph , NATHANSON, Harvey, C. , HOWELL, Robert, S. , KIRBY, Christopher, F. , STORASKA, Garrett
发明人： SMITH, Joseph , NATHANSON, Harvey, C. , HOWELL, Robert, S. , KIRBY, Christopher, F. , STORASKA, Garrett
IPC分类号： H05K1/00 , H01L27/01
摘要： A device includes a coiling layer, a circuit device layer and active microelectronic circuitry fabricated on the circuit device layer. The coiling layer is formed onto a surface of and coupled to the circuit device layer. The coiling layer having intrinsic stresses which cause coiling of the coiling layer and the circuit device layer including the microelectronic circuitry as the circuit device layer is released from an underlying substrate. A coiled circuit device is formed.

9. 发明申请

WO2007038178A2 IMPROVED NANOCOILS, SYSTEMS AND METHODS FOR FABRICATING NANOCOILS 审中-公开
标题翻译：改进的纳米材料，制备和制备纳米微粒的方法
公开(公告)号：WO2007038178A2
公开(公告)日：2007-04-05
申请号：PCT/US2006036759
申请日：2006-09-21
申请人： NORTHROP GRUMMAN CORP , STORASKA GARRETT A , HOWELL ROBERT S
发明人： STORASKA GARRETT A , HOWELL ROBERT S
IPC分类号： G02B6/26
CPC分类号： H01L27/1203 , B81C1/0019 , B82Y10/00 , B82Y30/00 , H01F41/041 , H01L21/84 , H01L27/10
摘要： Improved nanocoils, systems and methods for fabricating nanocoils. Embodiments enable wet etching techniques for releasing coiling arm structures and forming nanocoils. A method for fabricating nanocoils includes providing a silicon-on- insulator (SOI) wafer in which SOI wafer includes a buried oxide layer, patterning one or more devices onto a silicon device layer on top of the buried oxide layer, depositing a tensile stressed layer on the silicon device layer so that stressed layer and silicon device layer form a stressed coiling bi-layer, patterning a coiling arm structure on the stressed coiling bi-layer, depositing a metal encapsulation layer on the stressed coiling bi-layer, and releasing the coiling arm structure so that coiling arm coils to form nanocoil. A system for fabricating nanocoils includes a substrate, a coiling arm structure including, a buried oxide layer deposited on the substrate, a stressed coiling bi-layer attached to the buried oxide layer including a silicon device layer that includes one or more devices defined thereon and a stressed nitride layer that provides a tensile coiling stress, and a metal encapsulation layer that protects stressed nitride layer from hydrofluoric (HF) acid used to release the coiling arm structure from the substrate during the wet etch technique so that coiling arm structure coils into nanocoil when released. Improved nanocoils may be fabricated according to these and other methods and systems.
摘要翻译：改进的纳米体系，制备纳米线的系统和方法。实施例可以实现用于释放卷取臂结构和形成纳米油的湿蚀刻技术。一种制造纳米线的方法包括提供一种绝缘体上硅绝缘体（SOI）晶片，其中SOI晶片包括掩埋氧化物层，将一个或多个器件图案化成掩埋氧化物层顶部的硅器件层，沉积拉伸应力层在硅器件层上，使得应力层和硅器件层形成应力卷绕双层，在应力卷绕双层上构图卷绕臂结构，在应力卷绕双层上沉积金属封装层，并释放卷取臂结构，使卷绕臂线圈形成纳米线。一种用于制造纳米薄膜的系统包括基底，包括沉积在基底上的掩埋氧化物层的卷取臂结构，附着到掩埋氧化物层的应力卷绕双层，包括硅器件层，该硅器件层包括一个或多个在其上限定的器件，提供拉伸卷取应力的应力氮化物层和在湿法蚀刻技术期间保护应力氮化物层免受氢氟酸（HF）酸从衬底释放卷取臂结构的金属封装层，使得卷取臂结构卷材成纳米油释放时根据这些和其他方法和系统可以制造改进的纳米薄膜。

10. 发明申请

WO2005077002A3 POCKET-PEN ULTRA-HIGH RESOLUTION MEMS PROJECTION DISPLAY IN COMBINATION WITH ON-AXIS CCD IMAGE CAPTURE SYSTEM INCLUDING MEANS FOR PERMITTING 3-D IMAGING 审中-公开
标题翻译： POCKET-PEN超高分辨率微机电投影显示器与轴上CCD图像捕获系统的组合，包括允许三维成像的手段
公开(公告)号：WO2005077002A3
公开(公告)日：2006-08-03
申请号：PCT/US2005003867
申请日：2005-02-09
申请人： NORTHROP GRUMMAN CORP , NATHANSON HARVEY C , HOWELL ROBERT S , SAXENA RAGINI , STORASKA GARRETT A
发明人： NATHANSON HARVEY C , HOWELL ROBERT S , SAXENA RAGINI , STORASKA GARRETT A
IPC分类号： G06K9/46 , G03B17/17 , G03B17/48 , G03B21/00 , H04N5/222
CPC分类号： G03B17/48 , G03B17/17 , G03B21/005 , H04N5/2251 , H04N9/3111 , H04N9/3176
摘要： A small portable "pocket pen size" (12) projector/image grabber device for allowing an individual to gather, share and exploit information in a projected format in real time, day or night, with other individuals on demand. An ultra high density MEMS (14) mirror display array provides a 1024 x 768 line projection display. An on axis 512 x 384 color CCD imager (28) is also included resulting in a digitally-aligned image capture and overlay display capability. A sequentially addressed three color chip laser and low cost plastic optics provides full color high resolution bright displays for group viewing. 3-D color imaging is also provided by a binocular attachment to the device which permits the capturing of three-dimentional imagery.
摘要翻译：一个小型便携式“口袋笔尺寸”（12）投影机/图像抓取设备，用于允许个人以实时，白天或晚上的方式收集，共享和利用其他个人的预期格式的信息。超高密度MEMS（14）镜面显示阵列提供1024×768行投影显示。轴512×384彩色CCD成像器（28）也被包括在内，导致数字对准的图像捕捉和覆盖显示能力。顺序寻址的三色芯片激光器和低成本塑料光学元件提供全色高分辨率亮度显示器，用于组观看。 3-D彩色成像还通过双目连接器提供给设备，允许捕获三维图像。

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