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1. 发明申请

WO2009045420A1 METHOD AND APPARATUS FOR SEALING A GLASS PACKAGE 审中-公开
标题翻译：密封玻璃包装的方法和装置
公开(公告)号：WO2009045420A1
公开(公告)日：2009-04-09
申请号：PCT/US2008/011344
申请日：2008-10-01
申请人： CORNING INCORPORATED , AMSDEN, Jeffrey M , GENTILE, Margaret H , STOCKER, Mark A
发明人： AMSDEN, Jeffrey M , GENTILE, Margaret H , STOCKER, Mark A
IPC分类号： H05B33/04 , H05B33/10
CPC分类号： H05B33/04 , C03C23/001 , C03C23/002 , C03C23/0025 , C03C27/06 , C09J5/00 , C09J2205/31 , C09J2400/143 , H01L51/5246 , H05B33/10 , Y10T156/1066 , Y10T156/1374
摘要： An apparatus for sealing a substrate assembly by applying a force to the assembly while simultaneously exposing the substrate assembly, and in particular a sealing material disposed between two substrates of the substrate assembly, to an irradiating beam of electromagnetic energy. The beam heats, cures and/or melts the sealing material, depending upon the sealing material to form the seal. The force is applied by directing a flow of fluid against the substrate assembly, and beneficially improves contact between the substrates of the substrate assembly and the sealing material during the sealing process, therefore assisting in achieving a hermetic seal between the substrates.
摘要翻译：一种用于通过向组件施加力同时将衬底组件，特别是设置在衬底组件的两个衬底之间的密封材料同时暴露于电磁能的照射束来密封衬底组件的装置。梁根据密封材料加热，固化和/或熔化密封材料以形成密封。通过将流体流引导到衬底组件来施加力，并且有利地改善在密封过程期间衬底组件的衬底与密封材料之间的接触，从而有助于实现衬底之间的气密密封。

2. 发明申请

WO2009029264A1 SEMICONDUCTOR WAFER RE-USE IN AN EXFOLIATION PROCESS USING HEAT TREATMENT 审中-公开
标题翻译：半导体波导在使用热处理的扩散过程中重新使用
公开(公告)号：WO2009029264A1
公开(公告)日：2009-03-05
申请号：PCT/US2008/010135
申请日：2008-08-27
申请人： CORNING INCORPORATED , GADKAREE, Kishor P. , STOCKER, Mark A.
发明人： GADKAREE, Kishor P. , STOCKER, Mark A.
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： Methods and apparatus for re-using a semiconductor donor wafer in a semiconductor-on-insulator (SOI) fabrication process provide for: (a) subjecting a first implantation surface of a donor semiconductor wafer to an ion implantation process to create a first exfoliation layer of the donor semiconductor wafer; (b) bonding the first implantation surface of the first exfoliation layer to a first insulator substrate; (c) separating the first exfoliation layer from the donor semiconductor wafer, thereby exposing a first cleaved surface of the donor semiconductor wafer, the first cleaved surface having a first damage thickness; and (d) subjecting the first cleaved surface of the donor semiconductor wafer to one or more elevated temperatures over time to reduce the first damage thickness to a sufficient level to produce a second implantation surface.
摘要翻译：在半导体绝缘体（SOI）制造工艺中重新使用半导体施主晶片的方法和装置提供：（a）使施主半导体晶片的第一注入表面经受离子注入工艺以产生第一剥离层的供体半导体晶片; （b）将第一剥离层的第一注入表面接合到第一绝缘体基板; （c）将第一剥离层与施主半导体晶片分离，从而暴露施主半导体晶片的第一切割表面，第一裂解表面具有第一损伤厚度; 和（d）使供体半导体晶片的第一切割表面经历一个或多个升高的温度随时间而将第一损伤厚度减小到足够的水平以产生第二注入表面。

3. 发明申请

WO2007078686A3 METHOD OF POLISHING A SEMICONDUCTOR-ON-INSULATOR STRUCTURE 审中-公开
标题翻译：抛光半导体绝缘体结构的方法
公开(公告)号：WO2007078686A3
公开(公告)日：2007-10-04
申请号：PCT/US2006047269
申请日：2006-12-12
申请人： CORNING INC , CITES JEFFREY S , DARCANGELO CHARLES M , GREGORSKI STEVEN J , MASCHMEYER RICHARD O , STOCKER MARK A , THOMAS JOHN C
发明人： CITES JEFFREY S , DARCANGELO CHARLES M , GREGORSKI STEVEN J , MASCHMEYER RICHARD O , STOCKER MARK A , THOMAS JOHN C
IPC分类号： H01L21/321 , H01L21/66
CPC分类号： B24B49/12 , B24B37/013 , H01L21/30625 , H01L22/26
摘要： A method of polishing a semiconductor layer formed on a transparent substrate is described, the method including measuring the thickness of the semiconductor from the substrate side of the semiconductor layer simultaneously with the polishing, and using the thickness measurement to modify the polishing.
摘要翻译：对在透明基板上形成的半导体层进行研磨的方法进行说明，该方法包括：在与抛光同时从半导体层的基板侧测量半导体的厚度，并使用厚度测量来改变抛光。

4. 发明申请

WO2007078686A2 METHOD OF POLISHING A SEMICONDUCTOR-ON-INSULATOR STRUCTURE 审中-公开
标题翻译：抛光半导体绝缘体结构的方法
公开(公告)号：WO2007078686A2
公开(公告)日：2007-07-12
申请号：PCT/US2006/047269
申请日：2006-12-12
申请人： CORNING INCORPORATED , CITES, Jeffrey, S , DARCANGELO, Charles, M. , GREGORSKI, Steven, J. , MASCHMEYER, Richard, O. , STOCKER, Mark, A. , THOMAS, John, C.
发明人： CITES, Jeffrey, S , DARCANGELO, Charles, M. , GREGORSKI, Steven, J. , MASCHMEYER, Richard, O. , STOCKER, Mark, A. , THOMAS, John, C.
IPC分类号： H01L21/321 , H01L21/66
CPC分类号： B24B49/12 , B24B37/013 , H01L21/30625 , H01L22/26
摘要： A method of polishing a semiconductor layer formed on a transparent substrate is described, the method including measuring the thickness of the semiconductor from the substrate side of the semiconductor layer simultaneously with the polishing, and using the thickness measurement to modify the polishing.
摘要翻译：描述了一种抛光形成在透明基板上的半导体层的方法，该方法包括在抛光的同时从半导体层的基板侧测量半导体的厚度，并且使用厚度测量修改抛光。

5. 发明申请

WO2009085248A1 METHODS AND APPARATUS FOR FORMING A SLURRY POLISHING PAD 审中-公开
标题翻译：用于形成浆料抛光垫的方法和装置
公开(公告)号：WO2009085248A1
公开(公告)日：2009-07-09
申请号：PCT/US2008/013982
申请日：2008-12-22
申请人： CORNING INCORPORATED , CADY, Raymond C , MOORE, Michael J , SHALKEY, Mark A , STOCKER, Mark A
发明人： CADY, Raymond C , MOORE, Michael J , SHALKEY, Mark A , STOCKER, Mark A
IPC分类号： B24B1/00
CPC分类号： B24B37/26 , B24B13/02 , B24B37/20 , B24D18/0009 , Y10T29/53796 , Y10T156/1028 , Y10T156/1031
摘要： Methods and apparatus for forming a semi-spherical polishing pad for polishing semiconductor surfaces, provide for: placing a polishing pad pre-form on a dome-shaped forming surface, the polishing pad pre-form including a circular body having a center and an outer peripheral edge, and a plurality of slots extending from the outer peripheral edge towards the center; disposing a bladder opposite to the dome-shaped forming surface and the polishing pad pre-form; inflating the bladder with a fluid such that the dome-shaped forming surface of the bonnet form presses against the polishing pad pre-form from one side and the bladder presses against the polishing pad pre-form from an opposite side; and maintaining the pressing step for a predetermined period of time to achieve the semi-spherical polishing pad.
摘要翻译：用于形成用于抛光半导体表面的半球形抛光垫的方法和装置提供：将抛光垫预成型放置在圆顶形成形表面上，所述抛光垫预成型件包括具有中心和外部的圆形主体周缘，以及从外周缘向中心延伸的多个槽; 设置与圆顶形状表面相对的囊和抛光垫预制件; 用流体使气囊膨胀，使得发动机罩形状的圆顶形成表面从一侧挤压抛光垫预成型件，并且气囊从相对侧压靠抛光垫预成型件; 并且保持按压步骤达预定时间以实现半球形抛光垫。

6. 发明申请

WO2008066801A1 PRECISION ABRASIVE MACHINING OF WORK PIECE SURFACES 审中-公开
标题翻译：精密磨床加工工作表面
公开(公告)号：WO2008066801A1
公开(公告)日：2008-06-05
申请号：PCT/US2007/024417
申请日：2007-11-26
申请人： CORNING INCORPORATED , STOCKER, Mark A
发明人： STOCKER, Mark A
IPC分类号： B24B7/22 , B24B13/01 , B24B49/16
CPC分类号： B24B49/16 , B24B7/228 , B24B13/01
摘要： The spacing between an abrasive type surface polishing tool and the surface of the work piece that is being polished is controlled dynamically so that variations in the area of the abrasive pad in contact with the surface of the work piece compensated, thereby eliminating size variations in this contact area and the accompanying variations in material removal that produce surface height fluctuations.
摘要翻译：研磨型表面抛光工具与正被抛光的工件表面之间的间距被动态地控制，使得与工件表面接触的磨料区域的变化被补偿，由此消除了这种尺寸变化接触面积以及产生表面高度波动的材料去除的伴随变化。

7. 发明申请

WO2007127074A3 SEMICONDUCTOR ON GLASS INSULATOR MADE USING IMPROVED THINNING PROCESS 审中-公开
标题翻译：使用改进的稀薄工艺制造的玻璃绝缘体上的半导体
公开(公告)号：WO2007127074A3
公开(公告)日：2007-12-21
申请号：PCT/US2007009199
申请日：2007-04-16
申请人： CORNING INC , FENG JIANGWEI , GADKAREE KISHOR P , MACH JOSEPH F , MOORE MICHAEL J , STOCKER MARK A
发明人： FENG JIANGWEI , GADKAREE KISHOR P , MACH JOSEPH F , MOORE MICHAEL J , STOCKER MARK A
IPC分类号： H01L21/425
CPC分类号： H01L21/76254 , H01L21/30604 , H01L21/30608
摘要： Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to a wet etching process.
摘要翻译：用于制造玻璃上半导体（SiOG）结构的方法和设备包括：使施主半导体晶片的注入表面经受离子注入工艺以在施主半导体晶片中产生剥离层; 使用电解将脱落层的注入表面结合到玻璃基板; 从施主半导体晶片分离剥离层，从而暴露至少一个裂开的表面; 并且使所述至少一个裂开表面经历湿法蚀刻工艺。

8. 发明申请

WO2007127074A2 SEMICONDUCTOR ON GLASS INSULATOR MADE USING IMPROVED THINNING PROCESS 审中-公开
标题翻译：玻璃绝缘子半导体使用改进的方法制造
公开(公告)号：WO2007127074A2
公开(公告)日：2007-11-08
申请号：PCT/US2007/009199
申请日：2007-04-16
申请人： CORNING INCORPORATED , FENG, Jiangwei , GADKAREE, Kishor P. , MACH, Joseph F. , MOORE, Michael J. , STOCKER, Mark A.
发明人： FENG, Jiangwei , GADKAREE, Kishor P. , MACH, Joseph F. , MOORE, Michael J. , STOCKER, Mark A.
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , H01L21/30604 , H01L21/30608
摘要： Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to a wet etching process.
摘要翻译：用于制造玻璃（SiOG）结构的半导体的方法和装置包括：使施主半导体晶片的注入表面进行离子注入工艺以在施主半导体晶片中产生剥离层; 使用电解将剥离层的注入表面粘合到玻璃基板上; 将剥离层与施主半导体晶片分离，从而暴露至少一个切割表面; 以及对所述至少一个切割表面进行湿式蚀刻工艺。

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