专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2013056119A1 A CURRENT LEAD WITH A CONFIGURATION TO REDUCE HEAT LOAD TRANSFER IN AN ALTERNATING ELECTRICAL CURRENT ENVIRONMENT 审中-公开
标题翻译：具有减少替代电流环境中的热负荷传输的配置的电流引线
公开(公告)号：WO2013056119A1
公开(公告)日：2013-04-18
申请号：PCT/US2012/060058
申请日：2012-10-12
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , CITVER, Gregory , SINCLAIR, Frank , LISCHER, D. Jeffrey , DESAI, Nandishkumar
发明人： CITVER, Gregory , SINCLAIR, Frank , LISCHER, D. Jeffrey , DESAI, Nandishkumar
IPC分类号： H01F6/06
CPC分类号： H01F6/065 , Y10T29/49117
摘要： A current lead with a configuration to reduce heat load transfer in an alternating electrical current (AC) environment is disclosed. The current lead may comprise a conductive material having a configuration for reducing heat load transfer across the current lead when an alternating electrical current (AC) is applied to the current lead. A temperature gradient a may be exhibited along a length of the current lead.
摘要翻译：公开了一种具有在交流电流（AC）环境中减少热负荷传递的配置的电流引线。电流引线可以包括导电材料，其具有当将交流电流（AC）施加到电流引线时用于减少穿过电流引线的热负荷传递的构造。可以沿着电流引线的长度显示温度梯度a。

2. 发明申请

WO2013052354A1 TECHNIQUES FOR SUB-COOLING IN A SUPERCONDUCTING SYSTEM 审中-公开
标题翻译：用于在超级结构系统中进行分冷的技术
公开(公告)号：WO2013052354A1
公开(公告)日：2013-04-11
申请号：PCT/US2012/057686
申请日：2012-09-28
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , STRASSNER, James, D. , CITVER, Gregory , SINCLAIR, Frank
发明人： STRASSNER, James, D. , CITVER, Gregory , SINCLAIR, Frank
IPC分类号： F25D19/00
CPC分类号： F25D3/10 , F25D19/00
摘要： Techniques for sub-cooling in a superconducting system is disclosed. The techniques may be realized as a method and a superconducting system, comprising at least one insulated enclosure (202) configured to enclose at least a first fluid or gas (204) and a second fluid or gas (206), and at least one superconducting circuit within the at least one insulated enclosure. The superconducting system may be sub-cooled using at least the first fluid or gas (204).
摘要翻译：公开了在超导系统中进行次冷却的技术。这些技术可以被实现为一种方法和超导系统，其包括被配置为封闭至少第一流体或气体（204）和第二流体或气体（206）的至少一个绝缘外壳（202）和至少一个超导在所述至少一个绝缘外壳内的电路。可以使用至少第一流体或气体（204）来对超导系统进行过冷却。

3. 发明申请

WO2012158805A2 PLASMA ATTENTUATION FOR UNIFORMITY CONTROL 审中-公开
标题翻译：等离子体质谱控制
公开(公告)号：WO2012158805A2
公开(公告)日：2012-11-22
申请号：PCT/US2012/038150
申请日：2012-05-16
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , KURUNCZI, Peter, F. , SINCLAIR, Frank , BILOIU, Costel , GODET, Ludovic , ALLEN, Ernest
发明人： KURUNCZI, Peter, F. , SINCLAIR, Frank , BILOIU, Costel , GODET, Ludovic , ALLEN, Ernest
IPC分类号： H01J37/30
CPC分类号： H01J37/08 , H01J37/3171 , H01J37/3211 , H01J37/32119 , H01J37/32669
摘要： A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment a conductive or ferrite material is used to influence a section of the antenna where a section is made up of portions of multiple coiled segment. In another embodiment, a ferrite material is used to influence a portion of the antenna, in another embodiment, plasma uniformity is improved by modifying the internal shape and volume of the enclosure.
摘要翻译：公开了一种等离子体处理装置和方法，其在外壳内产生均匀的等离子体。在一个实施例中，导电或铁氧体材料用于影响天线的一部分，其中部分由多个线圈段的部分组成。在另一个实施例中，铁氧体材料用于影响天线的一部分，在另一个实施例中，通过改变外壳的内部形状和体积来提高等离子体均匀性。

4. 发明申请

WO2012051289A1 PLATEN CONTROL 审中-公开
标题翻译：板控制
公开(公告)号：WO2012051289A1
公开(公告)日：2012-04-19
申请号：PCT/US2011/055954
申请日：2011-10-12
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , CHANG, Shengwu , OLSON, Joseph , SINCLAIR, Frank , MCCLELLAN, Matthew, P. , CUCCHETTI, Antonella
发明人： CHANG, Shengwu , OLSON, Joseph , SINCLAIR, Frank , MCCLELLAN, Matthew, P. , CUCCHETTI, Antonella
IPC分类号： H01L21/67
CPC分类号： H01L21/67109 , H01L21/67288
摘要： A system and method for maintain a desired degree of platen flatness is disclosed, A laser system is used to measure the flatness of a platen. The temperature of the platen is then varied to achieve the desired level of flatness. In some embodiments, this laser system is only used during a set up period and the resulting desired temperature is then used during normal operation. In other embodiments, a laser system is used to measure the flatness of the platen, even while the workpiece is being processed.
摘要翻译：公开了一种用于保持期望程度的压板平整度的系统和方法.A激光系统用于测量压板的平整度。然后改变压板的温度以达到所需的平坦度水平。在一些实施例中，该激光系统仅在建立周期期间使用，然后在正常操作期间使用所得到的期望温度。在其他实施例中，即使在正在处理工件时，也使用激光系统来测量压板的平坦度。

5. 发明申请

WO2012027031A1 EDDY CURRENT THICKNESS MEASUREMENT APPARATUS 审中-公开
标题翻译： EDDY电流厚度测量装置
公开(公告)号：WO2012027031A1
公开(公告)日：2012-03-01
申请号：PCT/US2011/044343
申请日：2011-07-18
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC , ROSEN, Gary, J. , SINCLAIR, Frank , SOSKOV, Alexander , BUFF, James, S.
发明人： ROSEN, Gary, J. , SINCLAIR, Frank , SOSKOV, Alexander , BUFF, James, S.
IPC分类号： C30B11/00 , C30B15/20 , C30B35/00 , C30B15/00 , C30B29/06
CPC分类号： C30B11/00 , B22D11/1206 , B22D11/143 , C30B15/00 , C30B29/06 , C30B29/08 , C30B29/36 , C30B29/406 , C30B29/64 , C30B35/00 , G01B7/105 , G01B7/107 , Y10T117/1004 , Y10T117/1008 , Y10T117/1032 , Y10T117/1044 , Y10T117/1048 , Y10T117/1068 , Y10T117/1088
摘要： A sheet of a material is disposed in a melt of the material. The sheet is formed using a cooling plate in one instance. An exciting coil and sensing coil are positioned downstream of the cooling plate. The exciting coil and sensing coil use eddy currents to determine a thickness of the solid sheet on top the melt.
摘要翻译：将一片材料设置在材料的熔体中。在一种情况下，使用冷却板形成片材。励磁线圈和感测线圈位于冷却板的下游。励磁线圈和感测线圈使用涡流来确定熔体顶部的固体片的厚度。

6. 发明申请

WO2011082163A1 SYSTEM AND METHOD FOR CONTROLLING DEFLECTION OF A CHARGED PARTICLE BEAM WITHIN A GRADED ELECTROSTATIC LENS 审中-公开
标题翻译：控制抛光静电镜中带电粒子束的偏移的系统和方法
公开(公告)号：WO2011082163A1
公开(公告)日：2011-07-07
申请号：PCT/US2010/062225
申请日：2010-12-28
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , KELLERMAN, Peter, L. , SINCLAIR, Frank , BENVENISTE, Victor, M. , LU, Jun
发明人： KELLERMAN, Peter, L. , SINCLAIR, Frank , BENVENISTE, Victor, M. , LU, Jun
IPC分类号： H01J37/12 , H01J37/147 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/1477 , H01J2237/053 , H01J2237/12 , H01J2237/24514
摘要： A method and apparatus for controlling deflection, deceleration, and focus of an ion beam are disclosed. The apparatus may include a graded deflection/decleration lens including a plurality of upper and lower electrodes disposed on opposite sides of an ion beam, as well as a control system for adjusting the voltages applied to the electrodes. The difference in potential between pairs of upper and lower electrodes are varied using a set of "virtual knobs" that are operable to independently control deflection and deceleration of the ion beam. The virtual knobs include control of beam focus and residual energy contamination, control of upstream electron suppression, control of beam deflection, and fine timing of the final deflection angle of the beam while constraining the beam's position at the exit of the lens. In one embodiment, this is done by fine tuning beam deflection while constraining the beam position at the exit of the VEEF. In another embodiment, this is done by fine tuning beam deflection while measuring the beam position and angle at the wafer plane. In a further embodiment, this is done by tuning a deflection factor to achieve a centered beam at the wafer plane.
摘要翻译：公开了一种用于控制离子束的偏转，减速和聚焦的方法和装置。该装置可以包括分级偏转/去晶化透镜，其包括设置在离子束的相对侧上的多个上下电极，以及用于调整施加到电极的电压的控制系统。使用一组“虚拟旋钮”来改变上下电极对之间的电位差，可以独立地控制离子束的偏转和减速。虚拟旋钮包括光束聚焦和剩余能量污染的控制，上游电子抑制的控制，光束偏转的控制以及光束的最终偏转角的精细定时，同时约束光束在透镜出射处的位置。在一个实施例中，这是通过微调光束偏转来实现的，同时约束在VEEF的出口处的光束位置。在另一个实施例中，这是通过在测量晶片平面处的光束位置和角度的同时微调光束偏转来完成的。在另一个实施例中，这通过调整偏转因子来实现在晶圆平面处的中心束。

7. 发明申请

WO2010065718A2 EXCITED GAS INJECTION FOR ION IMPLANT CONTROL 审中-公开
标题翻译：激发气体注入进行离子注入控制
公开(公告)号：WO2010065718A2
公开(公告)日：2010-06-10
申请号：PCT/US2009/066549
申请日：2009-12-03
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES , KOO, Bon-Woong , BENVENISTE, Victor, M. , ROWLAND, Christopher, A. , CHANEY, Craig, R. , SINCLAIR, Frank , BASSOM, Neil, J.
发明人： KOO, Bon-Woong , BENVENISTE, Victor, M. , ROWLAND, Christopher, A. , CHANEY, Craig, R. , SINCLAIR, Frank , BASSOM, Neil, J.
IPC分类号： H01L21/265
CPC分类号： H01J27/022 , H01J37/08 , H01J37/3171 , H01J37/32357 , H01J37/32412 , H01J37/32422 , H01J2237/006 , H01J2237/061 , H01J2237/0815 , H01J2237/24514
摘要： An ion source that utilizes exited and/or atomic gas injection is disclosed- In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.
摘要翻译：公开了利用离开和/或原子气体注入的离子源。在离子束应用中，可以直接使用源气体，正如其通常提供的那样。可替代地或另外地，源气体在被引入到离子源室之前可以通过使其穿过远程等离子体源而被改变。这可用于创建激发态中性粒子，重离子，亚稳态分子或多电荷离子。在另一个实施例中，使用多种气体，其中一种或多种气体通过远程等离子体发生器。在某些实施例中，气体在被供应到离子源室之前在单个等离子体发生器中组合。在等离子体浸没应用中，通过一个或多个额外的气体注入位置将等离子体注入到处理室中。这些注入位置允许由处理室外部的远程等离子体源产生的额外等离子体的流入。

8. 发明申请

WO2010019695A3 SHEET THICKNESS CONTROL 审中-公开
标题翻译：板厚控制
公开(公告)号：WO2010019695A3
公开(公告)日：2010-04-15
申请号：PCT/US2009053588
申请日：2009-08-12
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , KELLERMAN PETER L , CARLSON FREDERICK , SINCLAIR FRANK
发明人： KELLERMAN PETER L , CARLSON FREDERICK , SINCLAIR FRANK
IPC分类号： H01L31/042
CPC分类号： C30B29/06 , C30B11/001 , C30B11/003 , C30B28/06 , C30B29/403 , C30B29/406 , C30B29/52 , C30B29/64 , H01L31/182 , Y02E10/546 , Y02P70/521 , Y10T117/1024
摘要： A method and apparatus for forming a sheet are disclosed. A melt is cooled and a sheet is formed on the melt. This sheet has a first thickness. The sheet is then thinned from the first thickness to a second thickness using, for example, a heater or the melt. The cooling may be configured to allow solutes to be trapped in a region of the sheet and this particular sheet may be thinned and the solutes removed. The melt may be, for example, silicon, silicon and germanium, gallium, or gallium nitride.
摘要翻译：公开了一种用于形成片材的方法和设备。熔体被冷却并且在熔体上形成片材。这张纸具有第一厚度。然后使用例如加热器或熔体将薄片从第一厚度减薄到第二厚度。冷却可以被配置成允许溶质被捕集在片材的区域中，并且该特定片材可以变薄并且溶质被去除。熔体可以是例如硅，硅和锗，镓或氮化镓。

9. 发明申请

WO2009155512A3 MELT PURIFICATION AND DELIVERY SYSTEM 审中-公开
标题翻译：熔融净化和输送系统
公开(公告)号：WO2009155512A3
公开(公告)日：2010-04-08
申请号：PCT/US2009047947
申请日：2009-06-19
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , KELLERMAN PETER L , SINCLAIR FRANK , CARLSON FREDERICK , BLAKE JULIAN G
发明人： KELLERMAN PETER L , SINCLAIR FRANK , CARLSON FREDERICK , BLAKE JULIAN G
IPC分类号： C30B13/16 , C30B13/14
CPC分类号： C30B11/003 , C01B33/037 , C30B11/001 , C30B28/06 , C30B29/02 , C30B29/06 , C30B29/08 , C30B29/406 , C30B29/60
摘要： An apparatus to purify a melt is disclosed. A first portion of a melt in a chamber is frozen in a first direction. A fraction of the first portion is melted in the first direction. A second portion of the melt remains frozen. The melt flows from the chamber and the second portion is removed from the chamber. The freezing concentrates solutes in the melt and second portion. The second portion may be a slug with a high solute concentration. This system may be incorporated into a sheet forming apparatus with other components such as, for example, pumps, filters, or particle traps.
摘要翻译：公开了一种净化熔体的设备。室中的熔体的第一部分在第一方向上被冷冻。第一部分的一部分在第一方向熔化。熔体的第二部分保持冷冻。熔体从腔室流出，第二部分从腔室中移出。冷冻浓缩物溶解在熔体和第二部分中。第二部分可以是高溶质浓度的塞子。该系统可以结合到具有其它部件例如泵，过滤器或颗粒捕集器的片材成形设备中。

10. 发明申请

WO2009042461A3 TECHNIQUES FOR OPTICAL ION BEAM METROLOGY 审中-公开
标题翻译：光学离子束测量技术
公开(公告)号：WO2009042461A3
公开(公告)日：2009-05-22
申请号：PCT/US2008076624
申请日：2008-09-17
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , PEREL ALEXANDER S , PLATOW WILHELM P , CHANEY CRAIG R , SINCLAIR FRANK , ROCKWELL TYLER
发明人： PEREL ALEXANDER S , PLATOW WILHELM P , CHANEY CRAIG R , SINCLAIR FRANK , ROCKWELL TYLER
IPC分类号： H01L21/265
CPC分类号： H01J37/3171 , H01J37/244 , H01J37/304 , H01J2237/2445 , H01J2237/24507 , H01J2237/24542 , H01J2237/2482 , H01J2237/30472
摘要： Techniques for providing optical ion beam metrology are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for controlling beam density profile, the apparatus may include one or more camera systems to capture at least one image of an ion beam and a control system coupled to the one or more camera systems to control a beam density profile of the ion beam. The control system may further include a dose profiler to provide information to one or more ion implantation components in at least one of a feedback loop and a feedforward loop to improve dose and angle uniformity.
摘要翻译：公开了用于提供光学离子束测量的技术。在一个特定的示例性实施例中，所述技术可以被实现为用于控制射束密度分布的设备，所述设备可以包括一个或多个照相机系统以捕获离子束的至少一个图像以及耦合到所述一个或多个照相机的控制系统系统来控制离子束的束密度分布。控制系统可以进一步包括剂量分析器，以向反馈回路和前馈回路中的至少一个中的一个或多个离子注入部件提供信息，以改善剂量和角度均匀性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式