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1. 发明申请

WO2005001492A1 HIGH CURRENT ELECTRON BEAM INSPECTION 审中-公开
标题翻译：高电流电子束检测
公开(公告)号：WO2005001492A1
公开(公告)日：2005-01-06
申请号：PCT/US2004/018159
申请日：2004-06-07
申请人： APPLIED MATERIALS ISRAEL, LTD. , APPLIED MATERIALS, INC. , KADYSHEVITCH, Alexander , SHUR, Dmitry , TALBOT, Christopher
发明人： KADYSHEVITCH, Alexander , SHUR, Dmitry , TALBOT, Christopher
IPC分类号： G01R31/307
CPC分类号： G01R31/2831 , G01R31/307
摘要： A method and apparatus for wafer inspection. The apparatus is capable of testing a sample having a first layer that is at least partly conductive and a second, dielectric layer formed over the first layer, following production of contact openings in the second layer, the apparatus includes: (i) an electron beam source adapted to direct a high current beam of charged particles to simultaneously irradiate a large number of contact openings at multiple locations distributed over an area of the sample; (ii) a current measuring device adapted to measure a specimen current flowing through the first layer in response to irradiation of the large number of contact openings at the multiple locations; and (iii) a controller adapted to provide an indication of the at least defective hole in response to the measurement.
摘要翻译：一种用于晶片检查的方法和装置。该设备能够测试具有至少部分导电的第一层的样品，以及在第二层中形成接触开口之后在第一层上形成的第二介电层，该设备包括：（i）电子束源适于引导大电流的带电粒子束同时在分布在样品区域上的多个位置同时照射大量的接触开口; （ii）电流测量装置，适于响应于多个位置处的大量接触开口的照射来测量流过第一层的样品电流; 和（iii）适于响应于测量提供至少有缺陷的孔的指示的控制器。

2. 发明申请

WO2009093247A1 SYSTEM AND METHOD FOR MATERIAL ANALYSIS OF A MICROSCOPIC ELEMENT 审中-公开
标题翻译：微观元素材料分析系统与方法
公开(公告)号：WO2009093247A1
公开(公告)日：2009-07-30
申请号：PCT/IL2009/000094
申请日：2009-01-22
申请人： APPLIED MATERIALS ISRAEL LTD. , SHUR, Dmitry
发明人： SHUR, Dmitry
IPC分类号： H01J37/26 , H01J37/304
CPC分类号： H01J37/28 , H01J37/222 , H01J37/244 , H01J37/263 , H01J37/265 , H01J37/3045 , H01J2237/24578 , H01J2237/2511 , H01J2237/2555 , H01J2237/30455
摘要： A system and a method for material analysis of a microscopic element, the method comprising: illuminating an area that includes at least a portion of the microscopic element by a charged particle beam, detecting particles that are generated in the area in response to the charged particle beam and analyzing the detected particles to provide an indication about a material characteristic of the microscopic element, wherein the operation of illumination is implemented as a sequence of displacement compensation determination periods, each provided between consecutive material analysis periods, the method further comprising evaluating during a displacement compensation determination period, a displacement of the charged particle beam with respect to the microscopic element and during a consecutive material analysis period applying a spatial adjustment measure as required, thereby compensating for a drift of the charged particle beam.
摘要翻译：一种用于微观元素的材料分析的系统和方法，所述方法包括：通过带电粒子束照射包括所述微观元素的至少一部分的区域，检测在所述区域中响应于所述带电粒子产生的颗粒并且分析检测到的颗粒以提供关于微观元件的材料特性的指示，其中照明的操作被实现为位移补偿确定周期的序列，每个位移补偿确定周期在连续的材料分析周期之间提供，该方法还包括在位移补偿确定周期，相对于微观元件的带电粒子束的位移和在连续的材料分析周期期间根据需要应用空间调整度量，从而补偿带电粒子束的漂移。

3. 发明申请

WO2004102643A3 CONTACT OPENING METROLOGY 审中-公开
公开(公告)号：WO2004102643A3
公开(公告)日：2004-11-25
申请号：PCT/US2004/014450
申请日：2004-05-07
申请人： APPLIED MATERIALS ISRAEL, LTD. , APPLIED MATERIALS, INC. , KADYSHEVITCH, Alexander , TALBOT, Chris , SHUR, Dmitry , HEGEDUS, Andreas G.
发明人： KADYSHEVITCH, Alexander , TALBOT, Chris , SHUR, Dmitry , HEGEDUS, Andreas G.
IPC分类号： H01J37/32
摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.

4. 发明申请

WO2004102643A2 CONTACT OPENING METROLOGY 审中-公开
标题翻译：联系开放计量
公开(公告)号：WO2004102643A2
公开(公告)日：2004-11-25
申请号：PCT/US2004014450
申请日：2004-05-07
申请人： APPLIED MATERIALS ISRAEL LTD , APPLIED MATERIALS INC , KADYSHEVITCH ALEXANDER , TALBOT CHRIS , SHUR DMITRY , HEGEDUS ANDREAS G
发明人： KADYSHEVITCH ALEXANDER , TALBOT CHRIS , SHUR DMITRY , HEGEDUS ANDREAS G
IPC分类号： H01J37/32 , H01L21/00 , H01L21/66 , H01L23/544
CPC分类号： H01J37/32935 , G01N23/00 , H01J2237/281 , H01J2237/2815 , H01L21/67253 , H01L22/12 , H01L22/34 , H01L2924/3011
摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partially conductive and a second layer formed over the first layer, following production of contact openings in the second layer by an etch process, the contact openings including a plurality of test openings having different, respective transverse dimensions. A beam of charged particles is directed to irradiate the test openings. In response to the beam, at least one of a specimen current flowing through the first layer and a total yield of electrons emitted from a surface of the sample is measured, thus producing an etch indicator signal. The etch indicator signal is analyzed as a function of the transverse dimensions of the test openings so as to assess a characteristic of the etch process.
摘要翻译：一种用于过程监测的方法包括接收具有至少部分导电的第一层的样品和在第一层上形成的第二层，在通过蚀刻工艺生产第二层中的接触开口之后，接触开口包括多个测试孔具有不同的相应的横向尺寸。带电粒子的束被引导以照射测试孔。响应于光束，测量流过第一层的样本电流和从样品表面发射的电子的总产率中的至少一个，从而产生蚀刻指示符信号。作为测试开口的横向尺寸的函数分析蚀刻指示符信号，以便评估蚀刻工艺的特性。

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