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1. 发明申请

WO2011137133A2 SEMICONDUCTING DEVICES AND METHODS OF PREPARING 审中-公开
标题翻译：半导体器件及其制备方法
公开(公告)号：WO2011137133A2
公开(公告)日：2011-11-03
申请号：PCT/US2011/034020
申请日：2011-04-27
申请人： EASTMAN KODAK COMPANY , SHUKLA, Deepak , MEYER, Diane, M. , AHEARN, Wendy, G.
发明人： SHUKLA, Deepak , MEYER, Diane, M. , AHEARN, Wendy, G.
IPC分类号： C09K11/06 , H05B33/10 , H05B33/14
CPC分类号： C09K11/06 , C09B3/18 , C09B5/62 , C09B57/08 , C09K2211/1007 , C09K2211/1011 , C09K2211/1014 , C09K2211/1029 , H01L51/0054 , H01L51/0558 , H05B33/10 , H05B33/14 , Y02E10/549
摘要： An amic acid or amic ester precursor can be applied to a substrate to form a thin film, and is then thermally converted into a semiconducting layer of the corresponding arylene diimide. This semiconducting thin film can be used in various articles including thin- film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated onto the substrate but is generated in situ from a solvent-soluble, easily coated precursor compound.
摘要翻译：可以将酰胺酸或酰胺酸酯前体施加到基材上以形成薄膜，然后热转化成相应的亚芳基二酰亚胺的半导体层。该半导体薄膜可以用于包括薄膜晶体管器件的各种制品中，该薄膜晶体管器件可并入到各种电子器件中。以这种方式，亚芳基二酰亚胺不需要涂覆在基材上，而是由溶剂可溶的易涂覆的前体化合物原位产生。

2. 发明申请

WO2009126203A1 N-TYPE SEMICONDUCTOR MATERIALS IN THIN FILM TRANSISTORS 审中-公开
标题翻译：薄膜晶体管中的N型半导体材料
公开(公告)号：WO2009126203A1
公开(公告)日：2009-10-15
申请号：PCT/US2009/001680
申请日：2009-03-17
申请人： EASTMAN KODAK COMPANY , SHUKLA, Deepak , WELTER, Thomas, Robert
发明人： SHUKLA, Deepak , WELTER, Thomas, Robert
IPC分类号： H01L51/05 , C07D471/06
CPC分类号： H01L51/0053 , C07D471/06 , C09B57/08 , H01L51/0545 , H01L51/42 , Y02E10/549 , Y10T428/31721
摘要： A thin film transistor comprises a layer of organic semiconductor that comprises an N,N'-1,4,5,8-naphthalenetetracarboxylic acid diimide having at least one cycloalkyl group having a fluorinated substituent at its 4-position that adopts an equatorial orientation in the trans configuration of the cycloalkyl group and an axial orientation in the cis configuration of the cycloalkyl group. Such transistors can be a field effect transistor having a dielectric layer, a gate electrode, a source electrode and a drain electrode. The gate electrode and the thin film of organic semiconductor material both contact the dielectric layer, and the source electrode and the drain electrode both contact the thin film of organic semiconductor material.
摘要翻译：一种薄膜晶体管，包括一层有机半导体，其包含在其4位具有至少一个具有氟化取代基的环烷基的N，N'-1,4,5,8-萘四甲酸二酰亚胺，其采用赤道取向环烷基的反式构型和环烷基的顺式构型的轴向取向。这种晶体管可以是具有电介质层，栅电极，源电极和漏电极的场效应晶体管。有机半导体材料的栅电极和薄膜都与介电层接触，源电极和漏电极均接触有机半导体材料的薄膜。

3. 发明申请

WO2008057610A8 NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS SEMICONDUCTOR MATERIALS 审中-公开
标题翻译：基于萘基的四羧酸二异氰酸酯化合物作为半导体材料
公开(公告)号：WO2008057610A8
公开(公告)日：2009-07-23
申请号：PCT/US2007024342
申请日：2007-11-21
申请人： EASTMAN KODAK CO , SHUKLA DEEPAK , WELTER THOMAS ROBERT , CAREY JEFFREY TODD , RAJESWARAN MANJU , AHEARN WENDY G
发明人： SHUKLA DEEPAK , WELTER THOMAS ROBERT , CAREY JEFFREY TODD , RAJESWARAN MANJU , AHEARN WENDY G
IPC分类号： H01L51/10
CPC分类号： H01L51/0053 , C09B5/62 , H01L51/0541 , H01L51/0545 , Y02E10/549
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a configurationally controlled N,N'-dicycloalkyl-substituted naphthalene-1,4,5,8-bis-carboximide compound having a substituted or unsubstituted alicyclic ring independently attached to each imide nitrogen atom with the proviso that at least one of the two alicyclic rings is necessarily a 4-substituted cyclohexyl ring in which a substituent at the 4-position is the sole substituent on the 4-substituted cyclohexyl ring other than the imide attachment; with such substituent being stereochemically disposed as only one of either an essentially trans or cis position, respectively, to the imide nitrogen substituent. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100°C.
摘要翻译：薄膜晶体管包括一层有机半导体材料，其包含构型受控的N，N'-二环烷基取代的萘-1,4,5,8-双 - 二甲酰亚胺化合物，其具有独立地连接到每个酰亚胺氮上的取代或未取代的脂环基原子，条件是两个脂环中的至少一个必须是4-取代的环己基环，其中4-位上的取代基是4-取代的环己基环以外的唯一取代基，而不是酰亚胺键; 其中这些取代基被立体化学地分别置于酰亚胺氮取代基中基本上为反式或顺式位置之一。这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。

4. 发明申请

WO2008057610A3 NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS SEMICONDUCTOR MATERIALS 审中-公开
标题翻译：以萘为基础的四羧酸二酰亚胺化合物作为半导体材料
公开(公告)号：WO2008057610A3
公开(公告)日：2008-07-24
申请号：PCT/US2007024342
申请日：2007-11-21
申请人： EASTMAN KODAK CO , SHUKLA DEEPAK , WELTER THOMAS ROBERT , CAREY JEFFREY TODD , RAJESWARAN MANJU , AHEARN WENDY G
发明人： SHUKLA DEEPAK , WELTER THOMAS ROBERT , CAREY JEFFREY TODD , RAJESWARAN MANJU , AHEARN WENDY G
IPC分类号： H01L51/10
CPC分类号： H01L51/0053 , C09B5/62 , H01L51/0541 , H01L51/0545 , Y02E10/549
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a configurationally controlled N,N'-dicycloalkyl-substituted naphthalene-1,4,5,8-bis-carboximide compound having a substituted or unsubstituted alicyclic ring independently attached to each imide nitrogen atom with the proviso that at least one of the two alicyclic rings is necessarily a 4-substituted cyclohexyl ring in which a substituent at the 4-position is the sole substituent on the 4-substituted cyclohexyl ring other than the imide attachment; with such substituent being stereochemically disposed as only one of either an essentially trans or cis position, respectively, to the imide nitrogen substituent. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100°C.
摘要翻译：薄膜晶体管包含一层有机半导体材料，该层包含构象控制的N，N'-二环烷基取代的萘-1,4,5,8-双 - 羧酰亚胺化合物，其具有独立地连接到每个酰亚胺氮上的取代或未取代的脂环其条件是两个脂环中的至少一个必须是4-取代的环己基环，其中4-位上的取代基是除酰亚胺连接以外的4-取代的环己基环上的唯一取代基; 其中这种取代基立体化学地分别设置为酰亚胺氮取代基的基本上反式或顺式位置之一。这种晶体管可以进一步包括与所述材料接触的间隔开的第一和第二接触装置或电极。还公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。

5. 发明申请

WO2006068833A3 N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS 审中-公开
公开(公告)号：WO2006068833A3
公开(公告)日：2006-06-29
申请号：PCT/US2005/044241
申请日：2005-12-06
申请人： EASTMAN KODAK COMPANY , SHUKLA, Deepak , FREEMAN, Diane Carol , NELSON, Shelby Forrester
发明人： SHUKLA, Deepak , FREEMAN, Diane Carol , NELSON, Shelby Forrester
IPC分类号： H01L51/30
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a substituted or unsubsitituted phenylalkyl group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100°C.

6. 发明申请

WO2006065548A2 N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS 审中-公开
标题翻译：薄膜晶体管的N型半导体材料
公开(公告)号：WO2006065548A2
公开(公告)日：2006-06-22
申请号：PCT/US2005043505
申请日：2005-12-02
申请人： EASTMAN KODAK CO , SHUKLA DEEPAK , FREEMAN DIANE CAROL , NELSON SHELBY FORRESTER
发明人： SHUKLA DEEPAK , FREEMAN DIANE CAROL , NELSON SHELBY FORRESTER
CPC分类号： H01L51/0053 , C09B5/62 , H01L51/0067 , H01L51/0545 , H01L51/5048 , Y02E10/549 , Y02P70/521
摘要： A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a carbocyclic or heterocyclic aromatic ring system substituted with one or more fluorine-containing groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100°C.
摘要翻译：一种薄膜晶体管包括一层有机半导体材料，它包括一个四羧酸二酰亚胺3,4,9,10-苝基化合物，它具有连接到每个酰亚胺氮原子上的碳环或杂环芳族环体系，被一个或多个氟包含组。这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。进一步公开了一种用于制造交流薄膜晶体管器件的方法，优选通过升华或溶液相沉积到衬底上，其中衬底温度不超过100℃。

7. 发明申请

WO2005100504A1 NOVEL ELECTROCHROMIC MATERIALS AND DEVICES 审中-公开
标题翻译：新型电致变色材料和器件
公开(公告)号：WO2005100504A1
公开(公告)日：2005-10-27
申请号：PCT/US2005/008696
申请日：2005-03-16
申请人： EASTMAN KODAK COMPANY , LENHARD, Jerome, Robert , SHUKLA, Deepak
发明人： LENHARD, Jerome, Robert , SHUKLA, Deepak
IPC分类号： C09K9/02
CPC分类号： C09K9/02 , C09K2211/1092
摘要： The present invention relates to an electrochromic material, and a device utilizing the electrochromic material, comprising a substituted-1,1-dioxo-thiopyran of the general structure I: wherein: X is carbon, nitrogen, oxygen, or sulfur; n is 0, 1 or 2; R3 is independently an electron withdrawing group or a substituted or unsubstituted alky or aryl group; R1 and R5 each independently represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group; and R2 and R4 each independently represent hydrogen, or an electron withdrawing group, or a substituted or unsubstituted alkyl group.
摘要翻译：本发明涉及一种电致变色材料，以及一种利用电致变色材料的装置，其包含通式I的取代的1,1-二氧代噻喃，其中：X为碳，氮，氧或硫; n为0,1或2; R3独立地是吸电子基团或取代或未取代的烷基或芳基; R 1和R 5各自独立地表示取代或未取代的烷基，取代或未取代的芳基或取代或未取代的杂环基; R2和R4各自独立地表示氢或吸电子基团，或取代或未取代的烷基。

8. 发明申请

WO2018081389A1 DEVICES AND METHODS FOR THE TREATMENT OF A ZOONOTIC HERPESVIRUS INFECTION 审中-公开
标题翻译：用于治疗ZOONOTIC HERPESVIRUS感染的装置和方法
公开(公告)号：WO2018081389A1
公开(公告)日：2018-05-03
申请号：PCT/US2017/058482
申请日：2017-10-26
申请人： GEORGIA STATE UNIVERSITY RESEARCH FOUNDATION, INC. , KIEL UNIVERSITY , UNIVERSITY OF ILLINOIS AT CHICAGO , GEORGIA TECH RESEARCH CORPORATION , ANTOINE, Thessicar E. , HILLARD, Julia , ADELUNG, Rainer , MISHRA, Yogendra Kumar , SHUKLA, Deepak , PRAUSNITZ, Mark
发明人： ANTOINE, Thessicar E. , HILLARD, Julia , ADELUNG, Rainer , MISHRA, Yogendra Kumar , SHUKLA, Deepak , PRAUSNITZ, Mark
IPC分类号： A61K9/51 , A61K9/00 , A61K9/50 , A61K38/28
CPC分类号： A61K9/0021 , A61D1/00 , A61K31/522 , A61K33/30 , A61K45/06 , A61K2300/00
摘要： The present disclosure relates to tetrapodal zinc-oxide nanostructures (T-ZONS), microneedle devices, and methods for treating or preventing a zoonotic herpesvirus infection.
摘要翻译：本发明涉及四足动物氧化锌纳米结构（T-ZONS），微针装置以及用于治疗或预防人畜共患性疱疹病毒感染的方法。

9. 发明申请

WO2012112294A1 PHOTOCURABLE AND PHOTOCURED COMPOSITIONS 审中-公开
标题翻译：可光滑和光滑的组合物
公开(公告)号：WO2012112294A1
公开(公告)日：2012-08-23
申请号：PCT/US2012/023248
申请日：2012-01-31
申请人： EASTMAN KODAK COMPANY , SHUKLA, Deepak
发明人： SHUKLA, Deepak
IPC分类号： G03F7/029
CPC分类号： G03F7/029 , C08F2/48 , C08F220/06 , C08F220/14 , C08F2222/1013 , C08F2222/1026 , C08F2222/1053 , C09D4/00 , C09D4/06 , H05K3/0076 , H05K3/022 , H05K3/287 , Y10T428/24612 , Y10T428/24802
摘要： The photocuring efficiency of a photoinitiator is increased by mixing it with an organic phosphite and an aldehyde. This mixture or photoinitiator composition can be used to cure acrylates or other photocurable compounds, particularly in an oxygen-containing environment, and the photocurable compositions can be used to form various articles.
摘要翻译：通过将其与有机亚磷酸酯和醛混合来增加光引发剂的光固化效率。该混合物或光引发剂组合物可用于固化丙烯酸酯或其它可光固化的化合物，特别是在含氧环境中，并且可光固化组合物可用于形成各种制品。

10. 发明申请

WO2012037498A2 ANTI-HEPARAN SULFATE PEPTIDES THAT BLOCK HERPES SIMPLEX VIRUS INFECTION IN VIVO 审中-公开
标题翻译：抗生素硫酸盐胶囊阻止了VIVO中的简单病毒感染
公开(公告)号：WO2012037498A2
公开(公告)日：2012-03-22
申请号：PCT/US2011/052002
申请日：2011-09-16
申请人： UNIVERSITY OF ILLINOIS , SHUKLA, Deepak , TIWARI, Vaibhav
发明人： SHUKLA, Deepak , TIWARI, Vaibhav
IPC分类号： C07K7/08 , C07K7/06 , A61K38/10 , A61K38/08 , C07D473/18 , C07D401/12 , C08B3/06 , A61P31/20
CPC分类号： C07D473/18 , A61K38/00 , C07D215/42 , C07K7/06 , C07K7/08 , C08B37/0081 , C12N2710/16111 , C12N2710/16411 , C12N2710/16611
摘要： Provided are anti-heparan sulfate peptides and methods that employ those peptides for the prevention or treatment of viral infections, including herpesviral infections such as α-herpesviral, β-herpesviral, and γ-herpesviral infections, which are exemplified by HSV-1. CMV, and HHV-8 viral infections, respectively. Peptides comprise at least 10 amino acids of the amino acid sequences X R X R X K XX R X R X and/or XX RRRR X RRR XK, wherein X represents any amino acid, which are exemplified by peptides that comprise at least 10 amino acids of the sequence LRSRTKIIRIRH and/or at least 10 amino acids of the sequence MPRRRRIRRRQK. Peptides may be coupled to one or more therapeutic compound(s) to generate peptide-therapeutic compound conjugates, wherein the therapeutic compound may be one or more of a nucleoside analog, an oligosaccharide, and a small molecule.
摘要翻译：提供的是抗肝素硫酸肽和利用这些肽预防或治疗病毒感染的方法，包括疱疹病毒感染如疱疹病毒，β-疱疹病毒和α-疱疹病毒感染，其以HSV-1为例。 CMV和HHV-8病毒感染。肽包含氨基酸序列XRXRXKXXRXRX和/或XXRRRRRRRRXK的至少10个氨基酸，其中X表示任何氨基酸，其例子包括序列LRSRTKIIRIRH的至少10个氨基酸和/或至少10个氨基酸的肽序列MPRRRRIRRRQK。肽可以与一种或多种治疗化合物偶联以产生肽治疗性化合物缀合物，其中所述治疗化合物可以是核苷类似物，寡糖和小分子中的一种或多种。

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