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1. 发明申请

WO1997045948A1 RCC SWITCHING POWER SUPPLY 审中-公开
标题翻译： RCC开关电源
公开(公告)号：WO1997045948A1
公开(公告)日：1997-12-04
申请号：PCT/JP1997001235
申请日：1997-04-10
申请人： SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. , SHIMAMURA, Takashi
发明人： SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
IPC分类号： H02M03/338
CPC分类号： H02M1/34 , H02M3/33569 , H02M3/338 , H02M2001/342 , H02M2001/346 , Y02B70/1491
摘要： A RCC switching power is turned on/off repeatedly by a main switching means (9) to supply a switching current to a primary winding (31) and an energy is transferred from the primary side to the secondary side by flyback operation. A circuit composed of a series connection of a snubber capacitor (7) in a snubber circuit (5a to 5c) and an auxiliary switching means (3) is connected in parallel to the primary winding (31). When the auxiliary switching means (3) is closed by an auxiliary winding (4) while the main switching means (9) is opened, the auxiliary switching means (3) performs a third quadrant operation in which the snubber capacitor (7) is charged by the energy stored in the leakage inductance component of the primary winding (31) and then performs a first quadrant operation in which the snubber capacitor (7) is discharged to supply a current to the primary winding (31). By the current, the energy is transferred to the secondary winding side (32) or a smoothing capacitor (21) on the primary side is charged and the energy is transferred to a primary side rectifying/smoothing means (18). As a surge voltage is not applied to the main switching means (9) and the energy stored in the leakage inductance component is not wasted, a low noise and high efficiency RCC switching power supply (2a to 2c) is obtained.
摘要翻译：通过主开关装置（9）重复地接通/断开RCC开关电源，以向初级绕组（31）提供开关电流，并且通过反激操作将能量从初级侧传送到次级侧。由缓冲电路（5a〜5c）中的缓冲电容器（7）和辅助开关装置（3）的串联连接构成的电路与初级绕组（31）并联连接。当主开关装置（9）断开时辅助开关装置（3）由辅助绕组（4）闭合时，辅助开关装置（3）执行缓冲电容器（7）被充电的第三象限操作通过存储在初级绕组（31）的漏电感分量中的能量，然后执行其中缓冲电容器（7）放电以向初级绕组（31）提供电流的第一象限操作。通过电流，将能量传递到次级绕组侧（32），或者将初级侧的平滑电容器（21）充电，并将能量传递到初级侧整流/平滑装置（18）。由于不向主开关装置（9）施加浪涌电压，并且不会浪费存储在漏电感部件中的能量，所以能够获得低噪声，高效率的RCC开关电源（2a〜2c）。

2. 发明授权

US12051536B2 Electronic device 有权
公开(公告)号：US12051536B2
公开(公告)日：2024-07-30
申请号：US17256614
申请日：2018-06-29
申请人： SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
发明人： Kosuke Ikeda , Yoshiaki Hiruma
IPC分类号： H01F27/32 , H01F27/22 , H01F27/29
CPC分类号： H01F27/327 , H01F27/22 , H01F27/29
摘要： An electronic device has a primary coil 10; a secondary coil 20 disposed to face the primary coil 10; a coil sealing part 50 sealing the primary coil 10 and the secondary coil 20 and being made of sealing resin; a primary-side sealing part 150 sealing a primary-side electronic element 110 electrically connected to the primary coil 10; and a secondary-side sealing part 250 sealing a secondary-side electronic element 210 electrically connected to the secondary coil 20.

3. 发明授权

US12040258B2 Semiconductor apparatus mounted electrically connected to a plurality of external terminals by a lead 有权
公开(公告)号：US12040258B2
公开(公告)日：2024-07-16
申请号：US17439401
申请日：2019-03-25
申请人： SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
发明人： Naoto Uchida , Yoshimasa Kobayashi , Toshikazu Arai
IPC分类号： H01L23/495 , H01L23/00 , H01L23/31
CPC分类号： H01L23/49503 , H01L23/3107 , H01L23/49524 , H01L23/49541 , H01L23/49551 , H01L24/38 , H01L24/40 , H01L24/41 , H01L24/84 , H01L2924/181
摘要： A semiconductor apparatus according to the present invention is a semiconductor apparatus on which a plurality of external terminals are disposed. The semiconductor apparatus includes: a first lead portions having die pads, first outer leads and first inner leads; chips; second lead portions having second outer leads and second inner lead; and a resin. On at least one of the first inner leads, the second inner leads and the die pads, a terminal temperature equalizing structure which restricts a heat transfer amount of heat transferred from the chips to predetermined external terminals, and equalizes respective terminal temperatures of a plurality of external terminals is formed.
According to the semiconductor apparatus of the present invention, it is possible to prevent specific external terminals from becoming extremely high temperature when the semiconductor apparatus is mounted.

4. 发明公开

US20240213308A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20240213308A1
公开(公告)日：2024-06-27
申请号：US18395627
申请日：2023-12-25
申请人： SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
发明人： Azusa SATO , Yoshifumi MATSUZAKI
IPC分类号： H01L29/06 , H01L29/78
CPC分类号： H01L29/0607 , H01L29/0684 , H01L29/7801
摘要： A semiconductor device includes, a semiconductor base body, an insulation layer that has an opening, and a surface electrode. The semiconductor base body includes a drift region, a p-type dopant region, and a peripheral dopant region. The p-type dopant region has a high concentration region that is formed in a region where the high concentration region overlaps with the p-type dopant region. A plurality of recombination centers are formed in the semiconductor base body, an inner peripheral end of the peripheral dopant region on the surface of the semiconductor base body is positioned on an inner peripheral side of an end portion of the opening, and a length from the inner peripheral end of the peripheral dopant region to the end portion of the opening is 0.01 μm or more to 130 μm or less.

5. 发明公开

US20240006510A1 THYRISTOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20240006510A1
公开(公告)日：2024-01-04
申请号：US18251906
申请日：2022-09-28
申请人： SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
发明人： Kanae ENDO , Tadashi INOUE , Yukihiro SHIBATA
IPC分类号： H01L29/66 , H01L29/74 , H01L29/36
CPC分类号： H01L29/66363 , H01L29/74 , H01L29/36
摘要： There is provided a thyristor with desensitized gate sensitivity. In accordance with this, the third P-type semiconductor layer, which is connected to a gate electrode, has an impurity concentration higher than that of a second P-type semiconductor layer. A fourth P-type semiconductor layer, which is in contact with each of the second P-type semiconductor layer and the second N-type semiconductor layer, is disposed below the cathode electrode, and has an impurity concentration higher than that of the second P-type semiconductor layer.

6. 发明授权

US11557564B2 Semiconductor device 有权
公开(公告)号：US11557564B2
公开(公告)日：2023-01-17
申请号：US15733890
申请日：2019-04-08
申请人： SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
发明人： Soichiro Umeda , Atsushi Kyutoku
IPC分类号： H01L23/00
摘要： A semiconductor device including a substrate; a chip on which a surface electrode is formed; and a lead. The lead includes a first electrode connecting portion disposed on the surface electrode and electrically connected to the surface electrode of the chip via a conductive bonding material; a second electrode connecting portion electrically connected to an electrode portion of a wiring pattern. A lead connected to the first electrode connecting portion and the second electrode connecting portion. The lead further has a thermal shrinking stress equalizing structure on a portion of an outer periphery of the first electrode connecting portion. The lead is configured to make a thermal shrinking stress applied to a conductive bonding material between the first electrode connecting portion and the surface electrode equal.

7. 发明申请

US20230011041A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20230011041A1
公开(公告)日：2023-01-12
申请号：US17857227
申请日：2022-07-05
申请人： SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
发明人： Soichiro UMEDA , Atsushi KYUTOKU
IPC分类号： H01L23/31 , H01L23/495 , H01L23/498 , H01L23/18
摘要： A semiconductor device includes: an insulating substrate; a first conductor portion and a second conductor portion that are formed on the insulating substrate; a semiconductor element disposed on the first conductor portion; a first terminal having a flat plate-shape that is connected to a first electrode of the semiconductor element; a second terminal having a flat plate-shape that is connected to the first conductor portion; and a sealing resin that seals the insulating substrate, the first conductor portion, the second conductor portion, and the semiconductor element. Each of the first terminal and the second terminal includes: an inner terminal portion disposed inside the sealing resin; and an outer terminal portion disposed in a state of being exposed to an exterior of the sealing resin, and a female thread portion is provided in the outer terminal portion of each of the first terminal and the second terminal.

8. 发明授权

US11462974B2 Semiconductor module 有权
公开(公告)号：US11462974B2
公开(公告)日：2022-10-04
申请号：US16333992
申请日：2018-06-08
申请人： SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
发明人： Yoshihisa Ieiri , Yoshihiro Kamiyama
IPC分类号： H02K11/40 , H02K11/25 , H02K11/33 , H01L23/31 , H01L23/34 , H01L23/495 , H02M7/00 , H02M7/48
摘要： A semiconductor module is configured to convert a direct current to a three-phase alternating current, and to supply the three-phase alternating current to a three-phase motor to drive the three-phase motor, wherein the first ground terminal GND1, the second ground terminal GND2, and the third ground terminal GND3 are arranged along the second side B2 to be separated from one another and electrically isolated from one another.

9. 发明申请

US20220148943A1 SEMICONDUCTOR APPARATUS, LEAD FRAME, AND POWER SOURCE APPARATUS 有权
公开(公告)号：US20220148943A1
公开(公告)日：2022-05-12
申请号：US17439401
申请日：2019-03-25
申请人： SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
发明人： Naoto UCHIDA , Yoshimasa KOBAYASHI , Toshikazu ARAI
IPC分类号： H01L23/495
摘要： A semiconductor apparatus according to the present invention is a semiconductor apparatus on which a plurality of external terminals are disposed. The semiconductor apparatus includes: a first lead portions having die pads, first outer leads and first inner leads; chips; second lead portions having second outer leads and second inner lead; and a resin. On at least one of the first inner leads, the second inner leads and the die pads, a terminal temperature equalizing structure which restricts a heat transfer amount of heat transferred from the chips to predetermined external terminals, and equalizes respective terminal temperatures of a plurality of external terminals is formed.
According to the semiconductor apparatus of the present invention, it is possible to prevent specific external terminals from becoming extremely high temperature when the semiconductor apparatus is mounted.

10. 发明授权

US11280812B2 Semiconductor device and semiconductor component 有权
公开(公告)号：US11280812B2
公开(公告)日：2022-03-22
申请号：US16494218
申请日：2017-11-24
申请人： SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
发明人： Kazuyuki Sashida , Mizue Yamaji , Kenichi Suzuki , Kenichi Yoshida , Shinji Kunori
IPC分类号： G01R15/18 , G01R19/00 , H01L29/78 , H01L27/06
摘要： A semiconductor device has a first electrode 61; a second electrode 62; and a semiconductor layer 1 having a winding wire part 10 provided so as to surround a current flowing between the first electrode 61 and the second electrode 62, a winding return wire part, which is provided so as to surround the current, is connected to a terminal end part of the winding wire part 10 and returns toward a starting end part side from the terminal end part, and an integration circuit configuration part connected to the winding wire part 10 or the winding return wire part. The integration circuit configuration part has one or more of a resistance part 115, a capacitor part 125 and an operational amplifier part 135.

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