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1. 发明申请

WO2012054577A3 METHODS FOR DEPOSITING BEVEL PROTECTIVE FILM 审中-公开
标题翻译：沉积水保护膜的方法
公开(公告)号：WO2012054577A3
公开(公告)日：2013-10-24
申请号：PCT/US2011056849
申请日：2011-10-19
申请人： LAM RES CORP , SHIN NEUNGHO , CHUNG PATRICK , KIM YUNSANG
发明人： SHIN NEUNGHO , CHUNG PATRICK , KIM YUNSANG
IPC分类号： C23C16/50
CPC分类号： H01L21/67069 , H01J37/32366 , H01J37/32376 , H01J37/32568 , H01L21/2007 , H01L21/30625 , H01L21/3083 , H01L21/67017
摘要： A method of film deposition using localized plasma to protect bevel edge of a wafer in a plasma chamber. The method includes adjusting an electrode gap between a movable electrode and a stationary electrode, the wafer being disposed on one of the movable electrode and the stationary electrode, to a gap distance configured to prevent plasma formation over a center portion of the wafer, the gap distance also dimensioned such that a plasma-sustainable condition around the bevel edge of the wafer is formed after the adjusting. The method also includes flowing deposition gas into the plasma chamber. The method includes maintaining, using a heater, a chuck temperature that is configured to facilitate film deposition on the bevel edge. The method further includes generating the localized plasma from the deposition gas for depositing a film on the bevel edge.
摘要翻译：使用局部等离子体的膜沉积方法来保护等离子体室中的晶片的斜边缘。该方法包括调整可动电极和固定电极之间的电极间隙，将晶片设置在可动电极和固定电极中的一个上，形成为防止等离子体在晶片的中心部分形成的间隙距离，间隙距离也被确定为使得在调整之后形成围绕晶片的斜边缘的等离子体可持续状态。该方法还包括将沉积气体流入等离子体室。该方法包括使用加热器维持配置成有助于膜倾斜边缘上的膜沉积的卡盘温度。该方法还包括从沉积气体产生局部等离子体，以便在斜面边缘上沉积薄膜。

2. 发明申请

WO2012054577A2 METHODS FOR DEPOSITING BEVEL PROTECTIVE FILM 审中-公开
标题翻译：沉积水保护膜的方法
公开(公告)号：WO2012054577A2
公开(公告)日：2012-04-26
申请号：PCT/US2011/056849
申请日：2011-10-19
申请人： LAM RESEARCH CORPORATION , SHIN, Neungho , CHUNG, Patrick , KIM, Yunsang
发明人： SHIN, Neungho , CHUNG, Patrick , KIM, Yunsang
IPC分类号： H01L21/30
CPC分类号： H01L21/67069 , H01J37/32366 , H01J37/32376 , H01J37/32568 , H01L21/2007 , H01L21/30625 , H01L21/3083 , H01L21/67017
摘要： A method of film deposition using localized plasma to protect bevel edge of a wafer in a plasma chamber. The method includes adjusting an electrode gap between a movable electrode and a stationary electrode, the wafer being disposed on one of the movable electrode and the stationary electrode, to a gap distance configured to prevent plasma formation over a center portion of the wafer, the gap distance also dimensioned such that a plasma-sustainable condition around the bevel edge of the wafer is formed after the adjusting. The method also includes flowing deposition gas into the plasma chamber. The method includes maintaining, using a heater, a chuck temperature that is configured to facilitate film deposition on the bevel edge. The method further includes generating the localized plasma from the deposition gas for depositing a film on the bevel edge.
摘要翻译：使用局部等离子体的膜沉积方法来保护等离子体室中的晶片的斜边缘。该方法包括调整可动电极和固定电极之间的电极间隙，将晶片设置在可动电极和固定电极中的一个上，形成为防止等离子体在晶片的中心部分形成的间隙距离，间隙距离也被确定为使得在调整之后形成围绕晶片的斜边缘的等离子体可持续状态。该方法还包括将沉积气体流入等离子体室。该方法包括使用加热器维持配置成有助于膜倾斜边缘上的膜沉积的卡盘温度。该方法还包括从沉积气体产生局部等离子体，以便在斜面边缘上沉积薄膜。

3. 发明申请

WO2011028600A2 ARRANGEMENTS FOR MANIPULATING PLASMA CONFINEMENT WITHIN A PLASMA PROCESSING SYSTEM AND METHODS THEREOF 审中-公开
标题翻译：用于在等离子体处理系统中操纵等离子体约束的装置及其方法
公开(公告)号：WO2011028600A2
公开(公告)日：2011-03-10
申请号：PCT/US2010/046790
申请日：2010-08-26
申请人： LAM RESEARCH CORPORATION , JUCO, Eller, Y. , SHIN, Neungho , KIM, Yunsang , BAILEY, Andrew
发明人： JUCO, Eller, Y. , SHIN, Neungho , KIM, Yunsang , BAILEY, Andrew
IPC分类号： H01L21/3065
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32541 , H01J37/32568 , H01J37/32706 , H01J2237/334
摘要： An arrangement for controlling bevel etch rate during plasma processing within a processing chamber. The arrangement includes a power source and a gas distribution system. The arrangement also includes a lower electrode, which is configured at least for supporting a substrate. The arrangement further includes a top ring electrode positioned above the substrate and a bottom ring electrode positioned below the substrate. The arrangement yet also includes a first match arrangement coupled to the top ring electrode and configured at least for controlling current flowing through the top ring electrode to control amount of plasma available for etching at least a part of the substrate top edge. The arrangement yet further includes a second match arrangement configured to control the current flowing through the bottom ring electrode to control amount of plasma available for at least etching at least a part of the substrate bottom edge.
摘要翻译：用于在处理室内的等离子体处理期间控制斜面蚀刻速率的布置。该装置包括电源和气体分配系统。该装置还包括至少用于支撑衬底的下电极。该装置还包括位于衬底上方的顶部环形电极和位于衬底下方的底部环形电极。该装置还包括第一匹配装置，其耦合到顶部环形电极并且至少用于控制流过顶部环形电极的电流，以控制可用于蚀刻衬底顶部边缘的至少一部分的等离子体的量。该装置还包括第二匹配装置，其被配置为控制流过底部环形电极的电流以控制可用于至少蚀刻衬底底部边缘的至少一部分的等离子体的量。

4. 发明申请

WO2010133989A3 ARRANGEMENTS AND METHODS FOR IMPROVING BEVEL ETCH REPEATABILITY AMONG SUBSTRATES 审中-公开
公开(公告)号：WO2010133989A3
公开(公告)日：2010-11-25
申请号：PCT/IB2010/051945
申请日：2010-05-04
申请人： LAM RESEARCH CORPORATION , LAM RESEARCH AG , FISCHER, Andreas , SHIN, Neungho , CAMARGO, Fransisco
发明人： FISCHER, Andreas , SHIN, Neungho , CAMARGO, Fransisco
IPC分类号： H01L21/3065
摘要： A method, performed in connection with bevel etching of a substrate, for improving bevel- etch repeatability among substrates, is disclosed. The method includes providing an optical arrangement and ascertaining at least one bevel edge characteristic of a bevel edge of said substrate. The method also includes deriving at least one compensation factor from said at least one bevel edge characteristic, said at least one compensation factor pertaining to an adjustment in a bevel etch process parameter. The method further includes performing said bevel etching utilizing said at least one compensation factor.

5. 发明申请

WO2011028600A3 ARRANGEMENTS FOR MANIPULATING PLASMA CONFINEMENT WITHIN A PLASMA PROCESSING SYSTEM AND METHODS THEREOF 审中-公开
标题翻译：用于在等离子体处理系统中操纵等离子体配置的装置及其方法
公开(公告)号：WO2011028600A3
公开(公告)日：2011-06-23
申请号：PCT/US2010046790
申请日：2010-08-26
申请人： LAM RES CORP , JUCO ELLER Y , SHIN NEUNGHO , KIM YUNSANG , BAILEY ANDREW
发明人： JUCO ELLER Y , SHIN NEUNGHO , KIM YUNSANG , BAILEY ANDREW
IPC分类号： H01L21/3065
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32541 , H01J37/32568 , H01J37/32706 , H01J2237/334
摘要： An arrangement for controlling bevel etch rate during plasma processing within a processing chamber. The arrangement includes a power source and a gas distribution system. The arrangement also includes a lower electrode, which is configured at least for supporting a substrate. The arrangement further includes a top ring electrode positioned above the substrate and a bottom ring electrode positioned below the substrate. The arrangement yet also includes a first match arrangement coupled to the top ring electrode and configured at least for controlling current flowing through the top ring electrode to control amount of plasma available for etching at least a part of the substrate top edge. The arrangement yet further includes a second match arrangement configured to control the current flowing through the bottom ring electrode to control amount of plasma available for at least etching at least a part of the substrate bottom edge.
摘要翻译：一种用于在处理室内的等离子体处理期间控制斜面蚀刻速率的装置。该装置包括电源和气体分配系统。该布置还包括下电极，其被配置为至少用于支撑衬底。该布置还包括位于基板上方的顶环电极和位于基板下方的底环电极。该布置还包括耦合到顶环电极并且被配置为至少用于控制流过顶环电极的电流以控制可用于蚀刻衬底顶部边缘的至少一部分的等离子体的第一匹配布置。该装置还包括第二匹配装置，其被配置为控制流过底环电极的电流以控制可用于至少蚀刻至少一部分衬底底边缘的等离子体的量。

6. 发明申请

WO2010133989A2 ARRANGEMENTS AND METHODS FOR IMPROVING BEVEL ETCH REPEATABILITY AMONG SUBSTRATES 审中-公开
标题翻译：改善基质中水分可重复性的安排和方法
公开(公告)号：WO2010133989A2
公开(公告)日：2010-11-25
申请号：PCT/IB2010051945
申请日：2010-05-04
申请人： LAM RES CORP , LAM RES AG , FISCHER ANDREAS , SHIN NEUNGHO , CAMARGO FRANSISCO
发明人： FISCHER ANDREAS , SHIN NEUNGHO , CAMARGO FRANCISCO
IPC分类号： H01L21/3065
CPC分类号： H01L22/20 , H01L22/12
摘要： A method, performed in connection with bevel etching of a substrate, for improving bevel- etch repeatability among substrates, is disclosed. The method includes providing an optical arrangement and ascertaining at least one bevel edge characteristic of a bevel edge of said substrate. The method also includes deriving at least one compensation factor from said at least one bevel edge characteristic, said at least one compensation factor pertaining to an adjustment in a bevel etch process parameter. The method further includes performing said bevel etching utilizing said at least one compensation factor.
摘要翻译：公开了一种与衬底的斜面蚀刻相关的方法，用于改善衬底之间的斜面蚀刻可重复性。该方法包括提供光学布置并且确定所述基板的斜边缘的至少一个斜边缘特性。该方法还包括从所述至少一个斜面边缘特性导出至少一个补偿因子，所述至少一个补偿因子属于斜面蚀刻工艺参数中的调整。该方法还包括利用所述至少一个补偿因子执行所述斜面蚀刻。

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