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1. 发明申请

WO2010131889A2 LIGHT-EMITTING DIODE DRIVING CIRCUIT AND DRIVING METHOD 审中-公开
标题翻译：发光二极管驱动电路和驱动方法
公开(公告)号：WO2010131889A2
公开(公告)日：2010-11-18
申请号：PCT/KR2010002986
申请日：2010-05-11
申请人： KOREA ELECTRONICS TECHNOLOGY , PARK JAE HYOUN , YOON HYUNG DO , HWANG SUNG MIN , BAIK KWANG HYEON , SEO YONG GON
发明人： PARK JAE HYOUN , YOON HYUNG DO , HWANG SUNG MIN , BAIK KWANG HYEON , SEO YONG GON
IPC分类号： H05B37/02
CPC分类号： H05B33/0815 , H05B33/0827 , Y02B20/347
摘要： The present invention relates to a light-emitting diode driving circuit and driving method for minimizing power waste that occurs when a light-emitting diode is driven using a constant current source and current deviation for each channel during multichannel driving. According to the present invention, a power supply circuit supplies an output voltage to a plurality of light-emitting diodes. A constant current source circuit inputs a drain-source current of a load transistor as a constant current value to a plurality of light-emitting diodes by controlling a gate of the load transistor using a specific bias current value so as to drive the plurality of light-emitting diodes. An error amplifier outputs a voltage value proportional to a difference between a drain-source voltage of the load transistor and a reference voltage. Moreover, a pulse-width modulation signal is generated using an output voltage value of the error amplifier, and an output voltage of the power supply circuit is controlled using the pulse-width modulation signal. At this point, the error amplifier feeds back the drain-source voltage of the load transistor to the power supply circuit in order to control an output voltage of the power supply circuit to enable the minimum drain-source voltage, used for operating the load transistor in a saturation zone, to be applied to the load transistor. Additionally, a plurality of load transistors are connected to one constant current source circuit to drive a plurality of light-emitting diodes connected in parallel, such that a multichannel light-emitting diode driving circuit is achieved to minimize current deviation for each channel.
摘要翻译：本发明涉及一种发光二极管驱动电路和驱动方法，用于在多通道驱动期间使用恒流源驱动发光二极管和每个通道的电流偏差来最小化电力浪费。根据本发明，电源电路向多个发光二极管提供输出电压。恒流源电路通过使用特定偏置电流值控制负载晶体管的栅极，将多个发光二极管的负载晶体管的漏极 - 源极电流输入为恒定电流值，以驱动多个发光二极管发光二极管。误差放大器输出与负载晶体管的漏 - 源电压和参考电压之间的差成比例的电压值。此外，使用误差放大器的输出电压值产生脉冲宽度调制信号，并且使用脉冲宽度调制信号来控制电源电路的输出电压。此时，误差放大器将负载晶体管的漏极 - 源极电压反馈到电源电路，以便控制电源电路的输出电压以使能用于操作负载晶体管的最小漏极 - 源极电压在饱和区中施加到负载晶体管。此外，多个负载晶体管连接到一个恒流源电路以驱动并联连接的多个发光二极管，使得实现多通道发光二极管驱动电路以最小化每个通道的电流偏差。

2. 发明申请

WO2010147357A3 HETEROGENEOUS SUBSTRATE, NITRIDE-BASED SEMICONDUCTOR DEVICE USING SAME AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：非均匀衬底，使用该衬底的氮化物基半导体器件及其制造方法
公开(公告)号：WO2010147357A3
公开(公告)日：2011-03-03
申请号：PCT/KR2010003828
申请日：2010-06-15
申请人： KOREA ELECTRONICS TECHNOLOGY , HWANG SUNG MIN , BAIK KWANG HYEON , SEO YONG GON , YOON HYUNG DO , PARK JAE HYOUN
发明人： HWANG SUNG MIN , BAIK KWANG HYEON , SEO YONG GON , YOON HYUNG DO , PARK JAE HYOUN
IPC分类号： H01L21/20 , H01L21/86
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/02639 , H01L33/007 , H01L33/22
摘要： The present invention relates to a heterogeneous substrate, to a nitride-based semiconductor device using the same and to a manufacturing method thereof. The present invention adjusts the mode of crystal growth to form a high quality non-polar or semi-polar nitride layer on a non-polar plane or a semi-polar plane of the heterogeneous substrate. The method according to the present invention prepares a base substrate having either a non-polar plane or a semi-polar plane, and forms a nitride-based crystal growth core layer on the plane of the prepared base substrate. A first buffer layer is grown on the crystal growth core layer such that the first buffer layer is grown faster in a vertical direction than in a horizontal direction. A horizontal growing layer is grown on the first buffer layer such that the horizontal growing layer is grown faster in a horizontal direction than in a vertical direction. Subsequently, a second buffer layer is grown on the horizontal growing layer. Here, a nitride silicon layer having a plurality of holes can be further formed between the horizontal growing layer on the first buffer layer and the second buffer layer.
摘要翻译：本发明涉及异质衬底，涉及使用其的氮化物基半导体器件及其制造方法。本发明调整晶体生长的模式以在非均质衬底的非极性平面或半极性平面上形成高质量的非极性或半极性氮化物层。根据本发明的方法制备具有非极性平面或半极性平面的基础衬底，并且在所制备的基础衬底的平面上形成基于氮化物的晶体生长芯层。在晶体生长核心层上生长第一缓冲层，使得第一缓冲层在垂直方向上比在水平方向上生长得更快。在第一缓冲层上生长水平生长层，使得水平生长层在水平方向上比在垂直方向上生长得更快。随后，在水平生长层上生长第二缓冲层。这里，可以在第一缓冲层上的水平生长层和第二缓冲层之间进一步形成具有多个孔的氮化硅层。

3. 发明申请

WO2010147357A2 HETEROGENEOUS SUBSTRATE, NITRIDE-BASED SEMICONDUCTOR DEVICE USING SAME AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：异质基板，基于氮化物的半导体器件及其制造方法
公开(公告)号：WO2010147357A2
公开(公告)日：2010-12-23
申请号：PCT/KR2010003828
申请日：2010-06-15
申请人： KOREA ELECTRONICS TECHNOLOGY , HWANG SUNG MIN , BAIK KWANG HYEON , SEO YONG GON , YOON HYUNG DO , PARK JAE HYOUN
发明人： HWANG SUNG MIN , BAIK KWANG HYEON , SEO YONG GON , YOON HYUNG DO , PARK JAE HYOUN
IPC分类号： H01L21/20 , H01L21/86
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02458 , H01L21/02488 , H01L21/02502 , H01L21/02639 , H01L33/007 , H01L33/22
摘要： The present invention relates to a heterogeneous substrate, to a nitride-based semiconductor device using the same and to a manufacturing method thereof. The present invention adjusts the mode of crystal growth to form a high quality non-polar or semi-polar nitride layer on a non-polar plane or a semi-polar plane of the heterogeneous substrate. The method according to the present invention prepares a base substrate having either a non-polar plane or a semi-polar plane, and forms a nitride-based crystal growth core layer on the plane of the prepared base substrate. A first buffer layer is grown on the crystal growth core layer such that the first buffer layer is grown faster in a vertical direction than in a horizontal direction. A horizontal growing layer is grown on the first buffer layer such that the horizontal growing layer is grown faster in a horizontal direction than in a vertical direction. Subsequently, a second buffer layer is grown on the horizontal growing layer. Here, a nitride silicon layer having a plurality of holes can be further formed between the horizontal growing layer on the first buffer layer and the second buffer layer.
摘要翻译：本发明涉及异质衬底，涉及使用该衬底的氮化物类半导体器件及其制造方法。本发明调整晶体生长的模式，以在异质衬底的非极性平面或半极性平面上形成高品质的非极性或半极性氮化物层。根据本发明的方法制备具有非极性平面或半极性平面的基底基底，并在所制备的基底的平面上形成氮化物基晶体生长核心层。在晶体生长核心层上生长第一缓冲层，使得第一缓冲层在垂直方向上比在水平方向上生长得更快。在第一缓冲层上生长水平生长层，使得水平生长层在水平方向上比在垂直方向上生长得更快。随后，在水平生长层上生长第二缓冲层。这里，可以在第一缓冲层上的水平生长层和第二缓冲层之间进一步形成具有多个孔的氮化物硅层。

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