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1. 发明申请

WO2004086406A1 SENSE AMPLIFIER SYSTEMS AND A MATRIX-ADDRESSABLE MEMORY DEVICE PROVIDED THEREWITH 审中-公开
标题翻译： SENSE放大器系统和提供的矩阵可寻址存储器件
公开(公告)号：WO2004086406A1
公开(公告)日：2004-10-07
申请号：PCT/NO2004/000086
申请日：2004-03-25
申请人： THIN FILM ELECTRONICS ASA , SCHWEICKERT, Robert , LEISTAD, Geirr, I.
发明人： SCHWEICKERT, Robert , LEISTAD, Geirr, I.
IPC分类号： G11C7/06
CPC分类号： G11C7/062 , G11C11/22 , G11C2207/063
摘要： A sense amplifier system for sensing the charge of a charge-storing means (601) comprises a first and second charge reference means (600a, 600b) connected in parallel and similar to the charge-storing means (601) and having respectively opposite polarization. The charge reference means (600a, 600b) and the charge-storing means (601) have a common input node (WL), and first and second pseudo-differential reference sense amplifiers (RSA1, RSA2) are connected with output nodes (RBL1, RBL2) of the charge reference means (600a, 600b) for generating reference signals to a common reference node (CHREF) connected with a pseudo-differential sense amplifier (SA). The pseudo-differential sense amplifier (SA) has a second input for receiving an output signal from the charge-storing means (601) and generates an output signal indicative of a polarization state of the charge-storing means. Another embodiment adapted for sensing the charges of a plurality of charge-storing means (701) and comprising at least two pairs of charge reference means is also described. A non-volatile matrix-addressable memory system comprising an electrical polarizable dielectric memory material exhibiting hysterisis and a sense amplifier system as described is also claimed.
摘要翻译：用于感测电荷存储装置（601）的电荷的感测放大器系统包括并联连接并类似于电荷存储装置（601）并具有相反偏振的第一和第二电荷参考装置（600a，600b）。充电参考装置（600a，600b）和电荷存储装置（601）具有公共输入节点（WL），并且第一和第二伪差分参考读出放大器（RSA1，RSA2）与输出节点（RBL1，用于将参考信号产生到与伪差分读出放大器（SA）连接的公共参考节点（CHREF）的电荷参考装置（600a，600b）的RBL2）。伪差分读出放大器（SA）具有用于从电荷存储装置（601）接收输出信号的第二输入端，并产生指示电荷存储装置的极化状态的输出信号。还描述了适于感测多个电荷存储装置（701）的电荷并且包括至少两对电荷参考装置的另一实施例。还要求保护包括表现迟滞的电极化电介质存储材料和所述读出放大器系统的非易失性矩阵寻址存储器系统。

2. 发明申请

WO2004086406A8 SENSE AMPLIFIER SYSTEMS AND A MATRIX-ADDRESSABLE MEMORY DEVICE PROVIDED THEREWITH 审中-公开
标题翻译： SENSE放大器系统和提供的矩阵可寻址存储器件
公开(公告)号：WO2004086406A8
公开(公告)日：2006-04-20
申请号：PCT/NO2004000086
申请日：2004-03-25
申请人： THIN FILM ELECTRONICS ASA , SCHWEICKERT ROBERT , LEISTAD GEIRR I
发明人： SCHWEICKERT ROBERT , LEISTAD GEIRR I
IPC分类号： G11C20060101 , G11C7/06 , G11C11/22 , G11C16/06
CPC分类号： G11C7/062 , G11C11/22 , G11C2207/063
摘要： A sense amplifier system for sensing the charge of a charge-storing means (601) comprises a first and second charge reference means (600a, 600b) connected in parallel and similar to the charge-storing means (601) and having respectively opposite polarization. The charge reference means (600a, 600b) and the charge-storing means (601) have a common input node (WL), and first and second pseudo-differential reference sense amplifiers (RSA1, RSA2) are connected with output nodes (RBL1, RBL2) of the charge reference means (600a, 600b) for generating reference signals to a common reference node (CHREF) connected with a pseudo-differential sense amplifier (SA). The pseudo-differential sense amplifier (SA) has a second input for receiving an output signal from the charge-storing means (601) and generates an output signal indicative of a polarization state of the charge-storing means. Another embodiment adapted for sensing the charges of a plurality of charge-storing means (701) and comprising at least two pairs of charge reference means is also described. A non-volatile matrix-addressable memory system comprising an electrical polarizable dielectric memory material exhibiting hysterisis and a sense amplifier system as described is also claimed.
摘要翻译：用于感测电荷存储装置（601）的电荷的感测放大器系统包括并联连接并类似于电荷存储装置（601）并具有相反偏振的第一和第二电荷参考装置（600a，600b）。充电参考装置（600a，600b）和电荷存储装置（601）具有公共输入节点（WL），并且第一和第二伪差分参考读出放大器（RSA1，RSA2）与输出节点（RBL1，用于将参考信号产生到与伪差分读出放大器（SA）连接的公共参考节点（CHREF）的电荷参考装置（600a，600b）的RBL2）。伪差分读出放大器（SA）具有用于从电荷存储装置（601）接收输出信号的第二输入端，并产生指示电荷存储装置的极化状态的输出信号。还描述了适于感测多个电荷存储装置（701）的电荷并且包括至少两对电荷参考装置的另一实施例。还要求保护包括表现迟滞的电极化电介质存储材料和所述读出放大器系统的非易失性矩阵寻址存储器系统。

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