会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明申请
    • THIN FILM SEMICONDUCTOR DEVICE FABRICATION METHOD AND THIN FILM SEMICONDUCTOR DEVICE
    • 薄膜半导体器件制造方法和薄膜半导体器件
    • US20100078639A1
    • 2010-04-01
    • US12523943
    • 2008-01-28
    • Kazumasa NomotoNobukazu HiraiRyoichi YasudaTakeo MinariKazuhito TsukagoshiYoshinobu Aoyagi
    • Kazumasa NomotoNobukazu HiraiRyoichi YasudaTakeo MinariKazuhito TsukagoshiYoshinobu Aoyagi
    • H01L29/786H01L21/336
    • H01L51/001H01L51/0516H01L51/0529H01L51/0545
    • The present invention provides a method for making a thin film semiconductor device having a bottom-gate, bottom-contact-type thin film transistor structure finer in size with satisfactory characteristics, in which the interface between a gate insulating film and a thin film semiconductor layer can be maintained at satisfactory conditions without being affected by formation of source/drain electrodes. A first gate insulating film (7-1) covering a gate electrode (5) on a substrate (3) is formed, and a pair of source/drain electrodes (9) is formed on the first gate insulating film (7-1). Subsequently, a second gate insulating film (7-2) is selectively formed only on the first gate insulating film (7-2) exposed from the source/drain electrodes (9). Next, a thin film semiconductor layer (11) continuously covering from the source/drain electrodes (9) to the first gate insulating film (7-1) through the second gate insulating film (7-2) is formed while making contact with the source/drain electrodes (9). A method for making a thin film semiconductor device (1) is characterized as such.
    • 本发明提供一种制造薄膜半导体器件的方法,该薄膜半导体器件具有尺寸较小且具有令人满意的特性的底栅,底接触型薄膜晶体管结构,其中栅极绝缘膜和薄膜半导体层 可以在令人满意的条件下保持不受源/漏电极形成的影响。 形成覆盖基板(3)上的栅极(5)的第一栅极绝缘膜(7-1),在第一栅极绝缘膜(7-1)上形成有一对源极/漏极电极(9) 。 随后,仅在从源极/漏极(9)露出的第一栅极绝缘膜(7-2)上选择性地形成第二栅极绝缘膜(7-2)。 接下来,形成通过第二栅极绝缘膜(7-2)从源极/漏极(9)连续地覆盖到第一栅极绝缘膜(7-1)的薄膜半导体层(11),同时与 源极/漏极(9)。 制造薄膜半导体器件(1)的方法的特征如下。