专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06747336B2 Twin current bipolar device with hi-lo base profile 有权
标题翻译：双电流双极型器件，具有Hi-lo基座型材
公开(公告)号：US06747336B2
公开(公告)日：2004-06-08
申请号：US09804389
申请日：2001-03-13
申请人： Jun-Lin Tsai , Ruey-Hsing Liu , Chiou-Shian Peng , Kuo-Chio Liu
发明人： Jun-Lin Tsai , Ruey-Hsing Liu , Chiou-Shian Peng , Kuo-Chio Liu
IPC分类号： H01L27082
CPC分类号： H01L29/66272 , H01L29/1004 , H01L29/732
摘要： A bipolar transistor is described whose I-V curve is such that it operates in two regions, one having low gain and low power consumption and another having higher gain and better current driving ability. Said transistor has a base region made up of two sub regions, the region closest to the emitter having a resistivity about an order a magnitude lower than the second region (which interfaces with the collector). A key feature of the invention is that the region closest to the collector is very uniformly doped, i.e. there is no gradient or built-in field present. In order to produce such a region, epitaxial growth along with boron doping is used rather than more conventional techniques such as ion implantation and/or diffusion.
摘要翻译：描述了一种双极性晶体管，其I-V曲线使得其工作在两个区域中，一个具有低增益和低功耗，另一个具有较高的增益和更好的电流驱动能力。所述晶体管具有由两个子区域构成的基极区域，最靠近发射极的区域的电阻率大约低于第二区域（与集电极接口）的数量级。本发明的关键特征是最靠近集电极的区域是非常均匀的掺杂的，即没有梯度或内置的场存在。为了制造这样的区域，使用外延生长以及硼掺杂，而不是诸如离子注入和/或扩散的更常规的技术。

2. 发明申请

US20060108641A1 Device having a laterally graded well structure and a method for its manufacture 审中-公开
标题翻译：具有横向分级井结构的装置及其制造方法
公开(公告)号：US20060108641A1
公开(公告)日：2006-05-25
申请号：US10992861
申请日：2004-11-19
申请人： Yu-Chang Jong , Chen-Bau Wu , Ruey-Hsing Liu , Kuo-Ming Wu
发明人： Yu-Chang Jong , Chen-Bau Wu , Ruey-Hsing Liu , Kuo-Ming Wu
IPC分类号： H01L29/76
CPC分类号： H01L21/26513 , H01L29/0638 , H01L29/66681
摘要： Provided are a device and method for its manufacture. In one example, the device includes a semiconductor substrate that includes a well region formed using a first-type dopant. First and second doped regions are formed in the well region using a second-type dopant, and the first and second doped regions are separated from each other by a dielectric isolation feature. A third doped region is formed in the well region using the first-type dopant and positioned under the dielectric isolation feature and between the first doped region and the second doped region. The third doped region has a dopant concentration higher than that of the well region.
摘要翻译：提供了一种用于其制造的装置和方法。在一个示例中，该器件包括半导体衬底，其包括使用第一类型掺杂剂形成的阱区。使用第二类型掺杂剂在阱区中形成第一和第二掺杂区域，并且第一和第二掺杂区域通过介电隔离特征彼此分离。使用第一型掺杂剂在阱区中形成第三掺杂区域，并且位于第一掺杂区域和第二掺杂区域之间。第三掺杂区的掺杂浓度高于阱区的掺杂浓度。

3. 发明授权

US06211028B1 Twin current bipolar device with hi-lo base profile 有权
标题翻译：双电流双极型器件，具有Hi-lo基座型材
公开(公告)号：US06211028B1
公开(公告)日：2001-04-03
申请号：US09245560
申请日：1999-02-05
申请人： Jun-Lin Tsai , Ruey-Hsing Liu , Chiou-Shian Peng , Kuo-Chio Liu
发明人： Jun-Lin Tsai , Ruey-Hsing Liu , Chiou-Shian Peng , Kuo-Chio Liu
IPC分类号： H01L21331
CPC分类号： H01L29/66272 , H01L29/1004 , H01L29/732
摘要： A bipolar transistor is described whose I-V curve is such that it operates in two regions, one having low gain and low power consumption and another having higher gain and better current driving ability. Said transistor has a base region made up of two sub regions, the region closest to the emitter having a resistivity about an order a magnitude lower than the second region (which interfaces with the collector). A key feature of the invention is that the region closest to the collector is very uniformly doped, i.e. there is no gradient or built-in field present. In order to produce such a region, epitaxial growth along with boron doping is used rather than more conventional techniques such as ion implantation and/or diffusion.
摘要翻译：描述了一种双极性晶体管，其I-V曲线使得其工作在两个区域中，一个具有低增益和低功耗，另一个具有较高的增益和更好的电流驱动能力。所述晶体管具有由两个子区域构成的基极区域，最靠近发射极的区域的电阻率大约低于第二区域（与集电极接口）的数量级。本发明的关键特征是最靠近集电极的区域是非常均匀的掺杂的，即没有梯度或内置的场存在。为了制造这样的区域，使用外延生长以及硼掺杂，而不是诸如离子注入和/或扩散的更常规的技术。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式