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1. 发明申请

US20070017900A1 Semiconductor wafer and process for producing a semiconductor wafer 有权
标题翻译：用于制造半导体晶片的半导体晶片和工艺
公开(公告)号：US20070017900A1
公开(公告)日：2007-01-25
申请号：US11487653
申请日：2006-07-17
申请人： Rudolf Rupp , Werner Aigner , Friedrich Passek
发明人： Rudolf Rupp , Werner Aigner , Friedrich Passek
IPC分类号： C03C15/00 , H01L21/461 , C23F1/00
CPC分类号： H01L21/67219 , B24B9/065 , H01L21/02021 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor wafer has an edge region with no defects larger than or equal to 0.3 μm. The wafers are produced by a process, comprising (a) providing a semiconductor wafer having a rounded and etched edge; (b) polishing the edge of the semiconductor wafer, in which step the semiconductor wafer, which is held on a centrally rotating chuck and projects beyond the chuck and at least one polishing drum which is inclined by a specific angle with respect to the chuck, rotates centrally and is covered with a polishing cloth, are moved toward one another and pressed onto one another under a specific contact pressure with a polishing abrasive being supplied continuously; (c) cleaning the semiconductor wafer; (d) inspecting an edge region of the semiconductor wafer using an inspection unit; and (e) further processing the semiconductor wafer.
摘要翻译：半导体晶片具有没有大于或等于0.3μm的缺陷的边缘区域。晶片通过一种工艺制造，包括（a）提供具有圆形和蚀刻边缘的半导体晶片; （b）抛光半导体晶片的边缘，其中保持在中心旋转卡盘上并突出超过卡盘的半导体晶片和相对于卡盘倾斜特定角度的至少一个抛光滚筒，旋转中心并用抛光布覆盖，彼此相向移动并在特定的接触压力下相互压制，并连续供应抛光磨料; （c）清洁半导体晶片; （d）使用检查单元检查半导体晶片的边缘区域; 和（e）进一步处理半导体晶片。

2. 发明授权

US07387963B2 Semiconductor wafer and process for producing a semiconductor wafer 有权
标题翻译：用于制造半导体晶片的半导体晶片和工艺
公开(公告)号：US07387963B2
公开(公告)日：2008-06-17
申请号：US11487653
申请日：2006-07-17
申请人： Rudolf Rupp , Werner Aigner , Friedrich Passek
发明人： Rudolf Rupp , Werner Aigner , Friedrich Passek
IPC分类号： H01L21/302
CPC分类号： H01L21/67219 , B24B9/065 , H01L21/02021 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor wafer has an edge region with no defects larger than or equal to 0.3 μm. The wafers are produced by a process, comprising (a) providing a semiconductor wafer having a rounded and etched edge; (b) polishing the edge of the semiconductor wafer, in which step the semiconductor wafer, which is held on a centrally rotating chuck and projects beyond the chuck and at least one polishing drum which is inclined by a specific angle with respect to the chuck, rotates centrally and is covered with a polishing cloth, are moved toward one another and pressed onto one another under a specific contact pressure with a polishing abrasive being supplied continuously; (c) cleaning the semiconductor wafer; (d) inspecting an edge region of the semiconductor wafer using an inspection unit; and (e) further processing the semiconductor wafer.
摘要翻译：半导体晶片具有没有大于或等于0.3μm的缺陷的边缘区域。晶片通过一种工艺制造，包括（a）提供具有圆形和蚀刻边缘的半导体晶片; （b）抛光半导体晶片的边缘，其中保持在中心旋转卡盘上并突出超过卡盘的半导体晶片和相对于卡盘倾斜特定角度的至少一个抛光滚筒，旋转中心并用抛光布覆盖，彼此相向移动并在特定的接触压力下相互压制，并连续供应抛光磨料; （c）清洁半导体晶片; （d）使用检查单元检查半导体晶片的边缘区域; 和（e）进一步处理半导体晶片。

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