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1. 发明授权

US3963528A Oxidation of chromium surfaces 失效
标题翻译：铬表面氧化
公开(公告)号：US3963528A
公开(公告)日：1976-06-15
申请号：US561260
申请日：1975-03-24
申请人： Walter Fedrowitz , Rudolf G. Frieser
发明人： Walter Fedrowitz , Rudolf G. Frieser
IPC分类号： C23C22/60 , C23C22/64 , C23C22/68 , G03F1/00 , G03F1/08 , C23F7/02
CPC分类号： C23C22/64
摘要： A method for forming an oxidized chromium film on the surface of chromium metal in a controlled manner which involves the use of a permanganate solution. The chromium metal film is first subjected to a basic hydrogen peroxide solution. The chromium surface is then removed from the hydrogen peroxide solution and immersed in an aqueous permanganate solution maintained at a temperature less than about 100.degree. C. for a time preferably within 1 to 5 minutes. At this time the chromium film has been oxidized to the desired thickness depending upon the time and temperature at which the surface has been subjected to the solutions. The surface is removed from the permanganate solution and dried. Should additional thickness of chromium oxide films be desired, the surface is intermittently subjected to the permanganate solution and dried to build up the desired thickness of chromium oxide.
摘要翻译：以金属铬表面形成氧化铬膜的方法，该方法包括使用高锰酸盐溶液。首先对铬金属膜进行碱性过氧化氢溶液处理。然后将铬表面从过氧化氢溶液中除去，并浸入保持在低于约100℃的温度的高锰酸盐溶液中优选1至5分钟的时间。此时，铬膜已经被氧化成所需的厚度，这取决于表面经受溶液的时间和温度。将表面从高锰酸盐溶液中除去并干燥。如果需要额外厚度的氧化铬膜，则表面间歇地经受高锰酸盐溶液并干燥以形成所需厚度的氧化铬。

2. 发明授权

US4350578A Cathode for etching 失效
标题翻译：蚀刻阴极
公开(公告)号：US4350578A
公开(公告)日：1982-09-21
申请号：US262020
申请日：1981-05-11
申请人： Rudolf G. Frieser , William H. Ma , Gunars M. Ozols , Bryant N. Zingerman
发明人： Rudolf G. Frieser , William H. Ma , Gunars M. Ozols , Bryant N. Zingerman
IPC分类号： C23F4/00 , H01J37/34 , H01L21/302 , H01L21/3065 , C23C15/00
CPC分类号： H01J37/3435
摘要： A cathode for reactive ion etching is provided which improves the etch rate and the uniformity of etching on the object etched. The cathode has a quartz plate with a series of recesses having disks therein of the same material as the object to be etched and a ring of that same material around the outer edge of the plate. In a preferred embodiment a cathode for etching silicon wafers has silicon disks recessed in a quartz plate at each wafer holding position and a ring of silicon around the outer edge of the plate.
摘要翻译：提供了用于反应离子蚀刻的阴极，其改善蚀刻速率和蚀刻对象上的蚀刻均匀性。阴极具有石英板，其具有一系列凹槽，其中具有与被蚀刻物体相同的材料的圆盘，以及围绕板的外边缘的相同材料的环。在优选实施例中，用于蚀刻硅晶片的阴极具有在每个晶片保持位置处在石英板中凹陷的硅盘，并且围绕板的外边缘具有硅环。

3. 发明授权

US4312012A Nucleate boiling surface for increasing the heat transfer from a silicon device to a liquid coolant 失效
标题翻译：用于增加从硅器件到液体冷却剂的热传递的成核沸腾表面
公开(公告)号：US4312012A
公开(公告)日：1982-01-19
申请号：US83039
申请日：1979-10-09
申请人： Rudolf G. Frieser , Morton D. Reeber
发明人： Rudolf G. Frieser , Morton D. Reeber
IPC分类号： H01L21/304 , H01L21/306 , H01L23/427 , H05K7/20 , H01L25/04 , H01L23/02
CPC分类号： H01L23/427 , H01L21/3046 , H01L21/30608 , H01L2924/0002
摘要： The invention is a structure for improving the cooling characteristics of a silicon semiconductor device immersed in a fluid coolant. The cooling improvement is achieved by enhancing the nucleate boiling characteristics of the silicon device by initially forming lattice defects on the backside surface of the device by sandblasting and subsequently etching the damaged surface to remove the lattice defects and thereby produce an intricate surface morphology which provides nucleate boiling sites.
摘要翻译：本发明是一种用于改善浸入流体冷却剂中的硅半导体器件的冷却特性的结构。通过最初通过喷砂在装置的背面上形成晶格缺陷并随后蚀刻受损表面以除去晶格缺陷从而产生提供成核的复杂表面形态，从而提高硅器件的核沸腾特性来实现冷却改进沸腾的地方。

4. 发明授权

US5114827A Photoresists resistant to oxygen plasmas 失效
标题翻译：耐氧等离子体的光刻胶
公开(公告)号：US5114827A
公开(公告)日：1992-05-19
申请号：US585708
申请日：1990-09-20
申请人： Farid M. Tranjan , Thomas D. DuBois , Rudolf G. Frieser , Stephen M. Bobbio , Susan K. S. Jones
发明人： Farid M. Tranjan , Thomas D. DuBois , Rudolf G. Frieser , Stephen M. Bobbio , Susan K. S. Jones
IPC分类号： G03F7/004 , G03F7/022 , G03F7/36
CPC分类号： G03F7/004 , G03F7/0226 , G03F7/36
摘要： The invention is a modified organic photoresist which is resistant to etching in oxygen-containing plasmas and therefore particularly useful for masking and etching organic polymer materials in VLSI and advanced packaging applications. The invention comprises adding a phosphorous-containing compound to a conventional photoresist. The phosphorous-containing compound is of a type and in an amount effective to substantially prevent etching of the modified photoresist in an oxygen-containing plasma without substantially adversely affecting the photosensitivity of the photoresist or the elasticity or the adhesion of the etch resistant film formed during oxygen-containing plasma exposure to an underlying material to be patterned and etched.
摘要翻译：本发明是一种改进的有机光致抗蚀剂，其耐氧蚀等离子体中的蚀刻性能，因此特别适用于在VLSI和高级封装应用中掩蔽和蚀刻有机聚合物材料。本发明包括向常规光致抗蚀剂中加入含磷化合物。含磷化合物的类型和数量有效地基本上防止在含氧等离子体中蚀刻改性光致抗蚀剂而基本上不利地影响光致抗蚀剂的光敏性或弹性或在其中形成的耐蚀刻膜的粘附性含氧等离子体暴露于待图案化和蚀刻的下层材料。

5. 发明授权

US4968582A Photoresists resistant to oxygen plasmas 失效
标题翻译：耐氧等离子体的光刻胶
公开(公告)号：US4968582A
公开(公告)日：1990-11-06
申请号：US212440
申请日：1988-06-28
申请人： Farid M. Tranjan , Thomas D. DuBois , Rudolf G. Frieser , Stephen M. Bobbio , Susan K. S. Jones
发明人： Farid M. Tranjan , Thomas D. DuBois , Rudolf G. Frieser , Stephen M. Bobbio , Susan K. S. Jones
IPC分类号： G03F7/004 , G03F7/022 , G03F7/36 , H01L21/027
CPC分类号： G03F7/0226 , G03F7/004 , G03F7/36 , Y10S430/136
摘要： The invention is a modified organic photoresist which is resistant to etching in oxygen-containing plasmas and therefore particularly useful for masking and etching organic polymer materials in VLSI and advanced packaging applications. The invention comprises adding a phosphorous-containing compound to a conventional photoresist. The phosphorous-containing compound is of a type and in an amount effective to substantially prevent etching of the modified photoresist in an oxygen-containing plasma without substantially adversely affecting the photosensitivity of the photoresist or the elasticity or the adhesion of the etch resistant film formed during oxygen-containing plasma exposure to an underlying material to be patterned and etched.

6. 发明授权

US3982918A Process for preparing a copper containing sealing glass 失效
标题翻译：制备含铜密封玻璃的方法
公开(公告)号：US3982918A
公开(公告)日：1976-09-28
申请号：US572036
申请日：1975-04-28
申请人： Rudolf G. Frieser , Jimmie L. Powell , Rao R. Tummala
发明人： Rudolf G. Frieser , Jimmie L. Powell , Rao R. Tummala
IPC分类号： C03B1/00 , C03B5/00 , C03C3/074 , C03C6/00 , C03C8/10 , C03C8/24 , C03C27/00 , C03B9/00 , C03B5/16 , C03B23/20 , C03C3/00
CPC分类号： C03C27/00 , C03C3/0745 , C03C8/24
摘要： A copper oxide containing seal glass is formed by a controlled low temperature process which reduces the formation of seeds in the glass. In one embodiment the glass is prepared in two portions with the first portion containing the high melting oxides and the second portion containing the low melting oxides. The copper oxide is added to the second portion and the two portions are combined to form the seal glass at temperatures below about 800.degree.C which reduces the formation of Cu.sub.2 O crystals in the glass.
摘要翻译：含铜氧化铜的密封玻璃通过控制的低温工艺形成，这减少了玻璃中种子的形成。在一个实施方案中，玻璃制备成两部分，第一部分含有高熔点氧化物，第二部分含有低熔点氧化物。将氧化铜加入到第二部分中，并且将两部分组合以在低于约800℃的温度下形成密封玻璃，这降低了玻璃中Cu2O晶体的形成。

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