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    • 5. 发明授权
    • Field emission vacuum devices
    • 场致发射真空装置
    • US4827177A
    • 1989-05-02
    • US92426
    • 1987-09-03
    • Rosemary A. LeeNeil A. Cade
    • Rosemary A. LeeNeil A. Cade
    • H01J21/10H01J19/24H01J19/38H01J19/46
    • H01J21/105
    • A vacuum valve device comprises a substrate on which is formed an updoped silicon layer from which a silicon dioxide layer is grown. First, second and third electrode structures are formed on the silicon dioxide layer by depositing a metallic layer and etching away unwanted portions of the layer. The first electrode structure has a pointed end and/or a sharp edge and/or is formed of low work function material so that, when a suitable voltage is applied between the first and third electrode structures, electrons are emitted from the first electrode structure due to a field emission process. Electrons therefore flow from the first to the third electrode structure substantially parallel to the substrate. The second electrode structure acts as a control electrode.
    • 真空阀装置包括衬底,在衬底上形成有二氧化硅层从中生长的上游硅层。 首先,通过沉积金属层并蚀刻掉层的不希望的部分,在二氧化硅层上形成第二和第三电极结构。 第一电极结构具有尖端和/或尖锐边缘和/或由低功函数材料形成,使得当在第一和第三电极结构之间施加合适的电压时,电子从第一电极结构发射出来 到场发射过程。 因此,电子从基本平行于衬底的第一电极结构流到第三电极结构。 第二电极结构用作控制电极。