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1. 发明申请

US20090161466A1 EXTENDING FLASH MEMORY DATA RETENSION VIA REWRITE REFRESH 有权
标题翻译：通过REWRITE REFRESH扩展闪存内存数据
公开(公告)号：US20090161466A1
公开(公告)日：2009-06-25
申请号：US11961772
申请日：2007-12-20
申请人： Darlene G. Hamilton , Mark W. Randolph , Don Carlos Darling , Ron Kornitz
发明人： Darlene G. Hamilton , Mark W. Randolph , Don Carlos Darling , Ron Kornitz
IPC分类号： G11C16/10 , G11C16/34
CPC分类号： G11C16/3418 , G11C16/10 , G11C16/3431
摘要： Providing for extended data retention of flash memory devices by program state rewrite is disclosed herein. By way of example, a memory cell or group of memory cells can be evaluated to determine a program state of the cell(s). If the cell(s) is in a program state, as opposed to a natural or non-programmed state, a charge level, voltage level and/or the like can be rewritten to a default level associated with the program state, without erasing the cell(s) first. Accordingly, conventional mechanisms for refreshing cell program state that require rewriting and erasing, typically degrading storage capacity of the memory cell, can be avoided. As a result, data stored in flash memory can be refreshed in a manner that mitigates loss of memory integrity, providing substantial benefits over conventional mechanisms that can degrade memory integrity at a relatively high rate.
摘要翻译：本文公开了通过程序状态改写提供闪速存储器件的扩展数据保存。作为示例，可以评估存储器单元或存储器单元组以确定单元的程序状态。如果单元处于编程状态，与自然或非编程状态相反，则可以将充电电平，电压电平和/或类似物重写为与程序状态相关联的默认电平，而不擦除电池第一。因此，可以避免用于刷新需要重写和擦除的通常降低存储器单元的存储容量的小区程序状态的常规机制。结果，存储在闪速存储器中的数据可以以减轻内存完整性损失的方式刷新，相对于可以以相对较高的速率降低存储器完整性的传统机制提供实质的益处。

2. 发明授权

US08938655B2 Extending flash memory data retension via rewrite refresh 有权
标题翻译：通过重写刷新来扩展闪存数据
公开(公告)号：US08938655B2
公开(公告)日：2015-01-20
申请号：US11961772
申请日：2007-12-20
申请人： Darlene G. Hamilton , Mark W. Randolph , Don Carlos Darling , Ron Kornitz
发明人： Darlene G. Hamilton , Mark W. Randolph , Don Carlos Darling , Ron Kornitz
IPC分类号： G11C29/00 , G11C7/00 , G11C16/34 , G11C16/10
CPC分类号： G11C16/3418 , G11C16/10 , G11C16/3431
摘要： Providing for extended data retention of flash memory devices by program state rewrite is disclosed herein. By way of example, a memory cell or group of memory cells can be evaluated to determine a program state of the cell(s). If the cell(s) is in a program state, as opposed to a natural or non-programmed state, a charge level, voltage level and/or the like can be rewritten to a default level associated with the program state, without erasing the cell(s) first. Accordingly, conventional mechanisms for refreshing cell program state that require rewriting and erasing, typically degrading storage capacity of the memory cell, can be avoided. As a result, data stored in flash memory can be refreshed in a manner that mitigates loss of memory integrity, providing substantial benefits over conventional mechanisms that can degrade memory integrity at a relatively high rate.
摘要翻译：本文公开了通过程序状态改写提供闪速存储器件的扩展数据保存。作为示例，可以评估存储器单元或存储器单元组以确定单元的程序状态。如果单元处于编程状态，与自然或非编程状态相反，则可以将充电电平，电压电平和/或类似物重写为与程序状态相关联的默认电平，而不擦除电池第一。因此，可以避免用于刷新需要重写和擦除的通常降低存储器单元的存储容量的小区程序状态的常规机制。结果，存储在闪速存储器中的数据可以以减轻内存完整性损失的方式刷新，相对于可以以相对较高的速率降低存储器完整性的传统机制提供实质的益处。

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