专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07924973B2 Interferometer device and method 有权
标题翻译：干涉仪装置及方法
公开(公告)号：US07924973B2
公开(公告)日：2011-04-12
申请号：US12269449
申请日：2008-11-12
申请人： Christian Kottler , Rolf Kaufmann
发明人： Christian Kottler , Rolf Kaufmann
IPC分类号： G03H5/00 , G01T1/36
CPC分类号： G01B15/025 , G01B9/02024 , G01B2290/30 , G01N23/04 , G21K2207/005
摘要： The present invention discloses an interferometer device and method. In embodiments, the device comprises an electromagnetic radiation source emitting radiation having a first mean wavelength λLE; a phase grating having a first aspect ratio; an absorption grating having a second aspect ratio; and a detector. The electromagnetic radiation source, the phase grating, the absorption grating and the detector are radiatively coupled with each other. The absorption grating is positioned between the detector and the phase grating; the electromagnetic radiation source is positioned in front of the source grating; and wherein the phase grating is designed such to cause a phase shift that is smaller than π on the emitted radiation. Additional and alternative embodiments are specified and claimed.
摘要翻译：本发明公开了一种干涉仪装置及方法。在实施例中，该装置包括发射具有第一平均波长λLE的辐射的电磁辐射源; 具有第一纵横比的相位光栅; 具有第二纵横比的吸收光栅; 和检测器。电磁辐射源，相位光栅，吸收光栅和检测器彼此辐射耦合。吸收光栅位于检测器和相位光栅之间; 电磁辐射源位于源光栅前面; 并且其中所述相位光栅被设计成导致小于＆pgr的相移; 对发射的辐射。具体说明和替代实施例。

2. 发明申请

US20100193666A1 Image Sensor with Large-Area, High-Sensitivity and High-Speed Pixels 有权
标题翻译：具有大面积，高灵敏度和高速像素的图像传感器
公开(公告)号：US20100193666A1
公开(公告)日：2010-08-05
申请号：US12702524
申请日：2010-02-09
申请人： Rolf Kaufmann , Michael Lehmann , Peter Seitz
发明人： Rolf Kaufmann , Michael Lehmann , Peter Seitz
IPC分类号： H01L27/148
CPC分类号： H01L27/14603
摘要： The pixel for use in an image sensor comprises a low-doped semiconductor substrate (A). On the substrate (A), an arrangement of a plurality of floating areas, e.g., floating gates (FG2-FG6), is provided. Neighboring floating gates are electrically isolated from each other yet capacitively coupled to each other. By applying a voltage (V2−V1) to two contact areas (FG1, FG7), a lateral steplike electric field is generated. Photogenerated charge carriers move along the electric-field lines to the point of highest potential energy, where a floating diffusion (D) accumulate the photocharges. The charges accumulated in the various pixels are sequentially read out with a suitable circuit known from image-sensor literature, such as a source follower or a charge amplifier with row and column select mechanisms. The pixel of offers at the same time a large sensing area, a high photocharge-detection sensitivity and a high response speed, without any static current consumption.
摘要翻译：用于图像传感器的像素包括低掺杂半导体衬底（A）。在基板（A）上，提供多个浮动区域的布置，例如浮动栅极（FG2-FG6）。相邻的浮动栅极彼此电隔离，但是电容耦合到彼此。通过向两个接触区域（FG1，FG7）施加电压（V2-V1），产生横向的阶梯状电场。光生电荷载体沿着电场线移动到最高势能点，浮动扩散（D）累积光电荷。利用从图像传感器文献已知的合适的电路，例如源跟随器或具有行和列选择机构的电荷放大器，顺序地读出累积在各个像素中的电荷。提供的像素同时具有大的感测区域，高的光电荷检测灵敏度和高响应速度，没有任何静态电流消耗。

3. 发明授权

US07701028B2 Image sensor with large-area, high-sensitivity and high-speed pixels 有权
标题翻译：具有大面积，高灵敏度和高速像素的图像传感器
公开(公告)号：US07701028B2
公开(公告)日：2010-04-20
申请号：US10594642
申请日：2005-03-31
申请人： Rolf Kaufmann , Michael Lehmann , Peter Seitz
发明人： Rolf Kaufmann , Michael Lehmann , Peter Seitz
IPC分类号： H01L31/075
CPC分类号： H01L27/14603
摘要： The pixel for use in an image sensor comprises a low-doped semiconductor substrate (A). On the substrate (A), an arrangement of a plurality of floating areas e.g., floating gates (FG2-FG6), is provided. Neighboring floating gates are electrically isolated from each other yet capacitively coupled to each other. By applying a voltage (V2-V1) to two contact areas (FG1, FG7), a lateral steplike electric field is generated. Photogenerated charge carriers move along the electric-field lines to the point of highest potential energy, where a floating diffusion (D) accumulate the photocharges. The charges accumulated in the various pixels are sequentially read out with a suitable circuit known from image-sensor literature, such as a source follower or a charge amplifier with row and column select mechanisms. The pixel of offers at the same time a large sensing area, a high photocharge-detection sensitivity and a high response speed without any static current consumption.
摘要翻译：用于图像传感器的像素包括低掺杂半导体衬底（A）。在基板（A）上，设置多个浮动区域（例如浮动栅极（FG2-FG6））的布置。相邻的浮动栅极彼此电隔离，但是电容耦合到彼此。通过向两个接触区域（FG1，FG7）施加电压（V2-V1），产生横向的阶梯状电场。光生电荷载体沿着电场线移动到最高势能点，浮动扩散（D）累积光电荷。利用从图像传感器文献已知的合适的电路，例如源跟随器或具有行和列选择机构的电荷放大器，顺序地读出累积在各个像素中的电荷。提供的像素同时具有大的感测区域，高的光电荷检测灵敏度和高响应速度，没有任何静态电流消耗。

4. 发明申请

US20090045346A1 X-RAY IMAGING DEVICE AND METHOD FOR THE MANUFACTURING THEREOF 有权
标题翻译： X射线成像装置及其制造方法
公开(公告)号：US20090045346A1
公开(公告)日：2009-02-19
申请号：US12193011
申请日：2008-08-17
申请人： Hans Von Kanel , Rolf Kaufmann
发明人： Hans Von Kanel , Rolf Kaufmann
IPC分类号： G01T1/24
CPC分类号： H01L27/14689 , H01L27/14659 , H01L31/028 , H01L31/1812
摘要： The present invention discloses an X-ray imaging device comprising an X-ray absorber that comprises a plurality of semiconductor layers. The plurality of semiconductor layers comprise a substrate having a backside; and at least one absorption layer adapted to absorb at least one X-ray photon impinging on the at least one absorption layer that is adapted to correspondingly generate in response to the at least one impinging X-ray photon at least one electron-hole pair; and a readout unit, wherein the readout unit is operatively coupled to the X-ray absorber such to enable readout of the at least one electron-hole pair. Additional and alternative embodiments are described and claimed.
摘要翻译：本发明公开了包括多个半导体层的X射线吸收体的X射线摄像装置。多个半导体层包括具有背面的基板; 以及适于吸收至少一个X射线光子的至少一个吸收层，所述至少一个X射线光子撞击所述至少一个吸收层，所述至少一个吸收层适于响应于所述至少一个入射X射线光子相应地产生至少一个电子 - 空穴对; 以及读出单元，其中所述读出单元可操作地耦合到所述X射线吸收器，以使得能够读出所述至少一个电子 - 空穴对。描述和要求保护附加和替代实施例。

5. 发明授权

US08237126B2 X-ray imaging device and method for the manufacturing thereof 有权
标题翻译： X射线成像装置及其制造方法
公开(公告)号：US08237126B2
公开(公告)日：2012-08-07
申请号：US12193011
申请日：2008-08-17
申请人： Hans Von Känel , Rolf Kaufmann
发明人： Hans Von Känel , Rolf Kaufmann
IPC分类号： H01L27/146 , H01L27/14 , H01L31/062
CPC分类号： H01L27/14689 , H01L27/14659 , H01L31/028 , H01L31/1812
摘要： The present invention discloses an X-ray imaging device comprising an X-ray absorber that comprises a plurality of semiconductor layers. The plurality of semiconductor layers comprise a substrate having a backside; and at least one absorption layer adapted to absorb at least one X-ray photon impinging on the at least one absorption layer that is adapted to correspondingly generate in response to the at least one impinging X-ray photon at least one electron-hole pair; and a readout unit, wherein the readout unit is operatively coupled to the X-ray absorber such to enable readout of the at least one electron-hole pair. Additional and alternative embodiments are described and claimed.
摘要翻译：本发明公开了包括多个半导体层的X射线吸收体的X射线摄像装置。多个半导体层包括具有背面的基板; 以及适于吸收至少一个X射线光子的至少一个吸收层，所述至少一个X射线光子撞击所述至少一个吸收层，所述至少一个吸收层适于响应于所述至少一个入射X射线光子相应地产生至少一个电子 - 空穴对; 以及读出单元，其中所述读出单元可操作地耦合到所述X射线吸收器，以使得能够读出所述至少一个电子 - 空穴对。描述和要求保护附加和替代实施例。

6. 发明申请

US20110101241A1 Solid-State Photodetector Pixel and Photodetecting Method 审中-公开
标题翻译：固态光电检测器像素和光电检测方法
公开(公告)号：US20110101241A1
公开(公告)日：2011-05-05
申请号：US12987669
申请日：2011-01-10
申请人： Kaspar Cottier , Rolf Kaufmann , Rino E. Kunz , Thierry Oggier , Guy Voirin , Simon Neukom , Michael Lehmann
发明人： Kaspar Cottier , Rolf Kaufmann , Rino E. Kunz , Thierry Oggier , Guy Voirin , Simon Neukom , Michael Lehmann
IPC分类号： G01N21/64
CPC分类号： H01L31/0232 , H01L27/14601 , H01L27/14623 , H01L27/148 , H01L31/02005
摘要： A pixel is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (Φ(x)) across the active region, and an integration gate (IG) for storing charge carriers generated in the active region and a dump site (Ddiff). The pixel further comprises separation-enhancing means (SL) for additionally enhancing charge separation in the active region and charge transport from the active region to the integration gate (IG). The separation-enhancing means (SL) are for instance a shield layer designed such that for a given lateral electric potential (Φ(x)), the incident light (In) does not impinge on the section from which the charge carriers would not be transported to the integration gate (IG).
摘要翻译：在具有用于光电检测器的平面的半导体基板（S）中形成像素。它包括用于将入射光（In）转换成电荷载体的有源区域，用于在有源区域上产生横向电位（Φ（x））的摄像机（PGL，PGM，PGR）和用于存储的积分栅极在活动区域中生成的电荷载体和转储位点（Ddiff）。像素还包括分离增强装置（SL），用于另外增强有源区域中的电荷分离和从有源区域到积分栅极（IG）的电荷传输。分离增强装置（SL）例如是设计成使得对于给定的横向电位（Φ（x）），入射光（In）不会撞击到电荷载体不会在其上的部分的屏蔽层运送到集成门（IG）。

7. 发明授权

US07547889B2 Photon detection device 有权
标题翻译：光子检测装置
公开(公告)号：US07547889B2
公开(公告)日：2009-06-16
申请号：US12075815
申请日：2008-03-14
申请人： Michael Lehmann , Rolf Kaufmann , Max Erick Busse-Grawitz
发明人： Michael Lehmann , Rolf Kaufmann , Max Erick Busse-Grawitz
IPC分类号： G01T1/24 , H03F1/34
CPC分类号： G01T1/17 , G01T1/2018
摘要： The present invention discloses a photon detection device that is adapted to detect at least one packet of photons. The photon detection device may include a photon-sensitive element having an output, an amplifier; and a non-linear feedback (NLF) element. The photon-sensitive element generates charges upon the engagement of at least one photon packet therewith. An increase from a first number of charges in the photon-sensitive element to a second number of charges, results in a corresponding increase of a first reset time required to reset the first number of charges to a respective second reset time required to reset the second number of charges in the photon-sensitive element, whereby the reset time is non-linear to with respect to an increase in the charges. Additional and alternative embodiments are described and claimed.
摘要翻译：本发明公开了一种适于检测至少一个光子包的光子检测装置。光子检测装置可以包括具有输出的光敏元件，放大器; 和非线性反馈（NLF）元素。光敏元件在与至少一个光子分组的接合时产生电荷。从光敏元件中的第一数量的电荷增加到第二数量的电荷导致将第一数量的电荷复位到复位第二个所需的相应的第二复位时间所需的第一复位时间的相应增加光子敏感元件中的电荷数，由此复位时间相对于电荷的增加是非线性的。描述和要求保护附加和替代实施例。

8. 发明授权

US08106472B2 Image sensor with large-area, high-sensitivity and high-speed pixels 有权
标题翻译：具有大面积，高灵敏度和高速像素的图像传感器
公开(公告)号：US08106472B2
公开(公告)日：2012-01-31
申请号：US12702524
申请日：2010-02-09
申请人： Rolf Kaufmann , Michael Lehmann , Peter Seitz
发明人： Rolf Kaufmann , Michael Lehmann , Peter Seitz
IPC分类号： H01L27/14
CPC分类号： H01L27/14603
摘要： The pixel for use in an image sensor comprises a low-doped semiconductor substrate (A). On the substrate (A), an arrangement of a plurality of floating areas, e.g., floating gates (FG2-FG6), is provided. Neighboring floating gates are electrically isolated from each other yet capacitively coupled to each other. By applying a voltage (V2−V1) to two contact areas (FG1, FG7), a lateral steplike electric field is generated. Photogenerated charge carriers move along the electric-field lines to the point of highest potential energy, where a floating diffusion (D) accumulate the photocharges. The charges accumulated in the various pixels are sequentially read out with a suitable circuit known from image-sensor literature, such as a source follower or a charge amplifier with row and column select mechanisms. The pixel of offers at the same time a large sensing area, a high photocharge-detection sensitivity and a high response speed, without any static current consumption.
摘要翻译：用于图像传感器的像素包括低掺杂半导体衬底（A）。在基板（A）上，提供多个浮动区域的布置，例如浮动栅极（FG2-FG6）。相邻的浮动栅极彼此电隔离，但是电容耦合到彼此。通过向两个接触区域（FG1，FG7）施加电压（V2-V1），产生横向的阶梯状电场。光生电荷载体沿着电场线移动到最高势能点，浮动扩散（D）累积光电荷。利用从图像传感器文献已知的合适的电路，例如源跟随器或具有行和列选择机构的电荷放大器，顺序地读出累积在各个像素中的电荷。提供的像素同时具有大的感测区域，高的光电荷检测灵敏度和高响应速度，没有任何静态电流消耗。

9. 发明申请

US20090014658A1 Solid-state photodetector pixel and photodetecting method 有权
标题翻译：固态光电探测器像素和光电检测方法
公开(公告)号：US20090014658A1
公开(公告)日：2009-01-15
申请号：US11658516
申请日：2005-07-25
申请人： Kaspar Cottier , Rolf Kaufmann , Rino E. Kunz , Thierry Oggier , Guy Voirin , Simon Neukom , Michael Lehmann
发明人： Kaspar Cottier , Rolf Kaufmann , Rino E. Kunz , Thierry Oggier , Guy Voirin , Simon Neukom , Michael Lehmann
IPC分类号： G01T1/24
CPC分类号： H01L31/0232 , H01L27/14601 , H01L27/14623 , H01L27/148 , H01L31/02005
摘要： A pixel is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (Φ(x)) across the active region, and an integration gate (IG) for storing charge carriers generated in the active region and a dump site (Ddiff). The pixel further comprises separation-enhancing means (SL) for additionally enhancing charge separation in the active region and charge transport from the active region to the integration gate (IG). The separation-enhancing means (SL) are for instance a shield layer designed such that for a given lateral electric potential (Φ(x)), the incident light (In) does not impinge on the section from which the charge carriers would not be transported to the integration gate (IG).
摘要翻译：在具有用于光电检测器的平面的半导体基板（S）中形成像素。它包括用于将入射光（In）转换成电荷载体的有源区域，用于在有源区域产生横向电势（Phi（x））的摄摄门（PGL，PGM，PGR）和用于存储的积分栅极在活动区域中生成的电荷载体和转储位点（Ddiff）。像素还包括分离增强装置（SL），用于另外增强有源区域中的电荷分离和从有源区域到积分栅极（IG）的电荷传输。分离增强装置（SL）例如是设计成对于给定的横向电势（Phi（x））的屏蔽层，入射光（In）不会撞击载流子不会在其上的部分运送到集成门（IG）。

10. 发明授权

US07897928B2 Solid-state photodetector pixel and photodetecting method 有权
标题翻译：固态光电探测器像素和光电检测方法
公开(公告)号：US07897928B2
公开(公告)日：2011-03-01
申请号：US11658516
申请日：2005-07-25
申请人： Rolf Kaufmann , Thierry Oggier , Simon Neukom , Michael Lehmann
发明人： Rolf Kaufmann , Thierry Oggier , Simon Neukom , Michael Lehmann
IPC分类号： G01T1/24 , H01L27/148
CPC分类号： H01L31/0232 , H01L27/14601 , H01L27/14623 , H01L27/148 , H01L31/02005
摘要： A pixel is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (Φ(x)) across the active region, and an integration gate (IG) for storing charge carriers generated in the active region and a dump site (Ddiff). The pixel further comprises separation-enhancing means (SL) for additionally enhancing charge separation in the active region and charge transport from the active region to the integration gate (IG). The separation-enhancing means (SL) are for instance a shield layer designed such that for a given lateral electric potential (Φ(x)), the incident light (In) does not impinge on the section from which the charge carriers would not be transported to the integration gate (IG).
摘要翻译：在具有用于光电检测器的平面的半导体基板（S）中形成像素。它包括用于将入射光（In）转换成电荷载体的有源区域，用于在有源区域上产生横向电位（Φ（x））的照相门（PGL，PGM，PGR）和用于存储的积分栅极在活动区域中生成的电荷载体和转储位点（Ddiff）。像素还包括分离增强装置（SL），用于另外增强有源区域中的电荷分离和从有源区域到积分栅极（IG）的电荷传输。分离增强装置（SL）例如是设计成使得对于给定的横向电位（Φ（x）），入射光（In）不会撞击到电荷载体不会在其上的部分的屏蔽层运送到集成门（IG）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式