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1. 发明授权

US5750071A Corrosion protection employing alternating voltage 失效
标题翻译：采用交流电压进行腐蚀保护
公开(公告)号：US5750071A
公开(公告)日：1998-05-12
申请号：US488666
申请日：1995-06-08
申请人： Mary E. Fiorino , Robert P. Frankenthal , James D. Sinclair
发明人： Mary E. Fiorino , Robert P. Frankenthal , James D. Sinclair
IPC分类号： C23F13/00 , C23F11/00
CPC分类号： C23F13/00
摘要： A method of protecting metals from corrosion by applying an alternating voltage to them, thereby reversing the metal's polarity with respect to its surroundings. Particular applications are for metals which are buried in soil or are exposed to an electrolyte. Amphoteric metals Steels, which are subject to hydrogen embrittlement when made cathodic, are also protected by polarity reversal.
摘要翻译：通过向它们施加交流电压来保护金属免受腐蚀的方法，从而使金属相对于其周围的极性反转。特别适用于埋在土壤中或暴露于电解液中的金属。两性金属当制成阴极时受到氢脆化的钢也受到极性反转的保护。

2. 发明授权

US5288951A Copper-based metallizations for hybrid integrated circuits 失效
标题翻译：用于混合集成电路的铜基金属化
公开(公告)号：US5288951A
公开(公告)日：1994-02-22
申请号：US968810
申请日：1992-10-30
申请人： Robert P. Frankenthal , Ajibola O. Ibidunni , Dennis L. Krause
发明人： Robert P. Frankenthal , Ajibola O. Ibidunni , Dennis L. Krause
IPC分类号： H01L21/28 , H01L21/52 , H01L21/768 , H01L23/12 , H01L23/498 , H01L23/522 , H01L27/01 , H05K1/09 , H05K3/06 , H05K3/10 , H05K3/24 , H05K3/38 , H05K3/40 , H05K1/00
CPC分类号： H05K3/244 , C23C28/021 , C25D5/022 , C25D5/12 , H01L23/49866 , H05K3/108 , H05K3/388 , H01L2924/0002 , H05K2203/0723 , H05K3/062 , H05K3/243
摘要： A new metanization is described which is a composite of subsequent metal layers beginning with a layer of titanium and having in an ascending order the following composition: Ti - TiPd - Cu - Ni - Au. TiPd is an alloy of titanium and palladium containing from 0.3 to 14 weight percent Pd, by the weight of the alloy. The TiPd alloy is etchable in an aqueous BF solution containing from 0.5 to 2.0 and higher, preferably from 0.5 to 1.2 weight percent BF. The use of the TiPd alloy avoids the occurrence of Pd residues remaining after the etching of Ti layer and liftoff (rejection etching) of Pd layer in a prior art Ti-Pd-Cu-Ni-Au metanization. Ti and TiPd layers are present in a thickness ranging from 100 to 300 nm and from 50 to 300 nm, respectively, and in a total minimum thickness needed to maintain bonding characteristics of the metallization. The metallization is suitable for use in various circuits including integrated circuits (ICs), hybrid integrated circuits (HICs), film integrated circuits (FICs), multi-chip modules (MCMs), etc.
摘要翻译：描述了一种新的元化，其是随后的金属层的复合材料，其以钛层开始并且具有以下组成的升序：Ti-TiPd-Cu-Ni-Au。 TiPd是以合金重量计含有0.3-14重量％Pd的钛和钯的合金。 TiPd合金可以在含有0.5至2.0和更高，优选0.5至1.2重量百分比的BF的BF水溶液中进行刻蚀。 TiPd合金的使用避免了在现有技术的Ti-Pd-Cu-Ni-Au转化后，蚀刻Ti层之后剩余的Pd残余物和Pd层的剥离（拒绝蚀刻）的发生。 Ti和TiPd层分别以100至300nm和50至300nm的厚度存在，并且以维持金属化的结合特性所需的总最小厚度存在。金属化适用于各种电路，包括集成电路（IC），混合集成电路（HIC），胶片集成电路（FIC），多芯片模块（MCM）等。

3. 发明授权

US5578101A Method of making a sol-gel glass body and removing same from mold 失效
标题翻译：制造溶胶凝胶玻璃体并从模具中除去溶剂的方法
公开(公告)号：US5578101A
公开(公告)日：1996-11-26
申请号：US522808
申请日：1995-09-01
申请人： Greg E. Blonder , Robert P. Frankenthal , David W. Johnson, Jr. , Eliezer M. Rabinovich
发明人： Greg E. Blonder , Robert P. Frankenthal , David W. Johnson, Jr. , Eliezer M. Rabinovich
IPC分类号： C03B19/12 , C03B37/016
CPC分类号： C03B19/12
摘要： The disclosed method of making a glass body by a sol/gel process comprises electrochemically assisted release of the gel body from the mold in which the body was formed. More specifically, the method involves gelation of a sol in a mold that comprises a first conductor member, with a second conductor member also being in contact with the sol and/or gel, and causing the flow of a current between the first and second conductor members, with the first member being the cathode. In consequence of the current flow a substantially liquid lubricating layer that facilitates removal of the gel body from the melt exists at the cathode/gel interface.
摘要翻译：所公开的通过溶胶/凝胶法制造玻璃体的方法包括将凝胶体从其中形成本体的模具中电化学辅助释放出来。更具体地，该方法包括在包含第一导体构件的模具中使溶胶凝胶化，第二导体构件也与溶胶和/或凝胶接触，并引起第一和第二导体之间的电流流动成员，第一个成员是阴极。由于电流流动，有利于从熔体中去除凝胶体的基本上液体的润滑层存在于阴极/凝胶界面处。

4. 发明授权

US5381701A Dust particle exposure chamber 失效
标题翻译：粉尘曝光室
公开(公告)号：US5381701A
公开(公告)日：1995-01-17
申请号：US037802
申请日：1993-03-26
申请人： Robert P. Frankenthal , David J. Siconolfi , James D. Sinclair
发明人： Robert P. Frankenthal , David J. Siconolfi , James D. Sinclair
IPC分类号： H01L21/66 , G01N1/28 , G01R31/26 , G01R31/28 , G01N17/00
CPC分类号： G01R31/2849 , G01R31/2817
摘要： This invention is embodied in an apparatus for assessing the effects of controlled amounts of well-characterized ionic or other particles on the reliability of electronic components. The chamber includes a high efficiency filter that purifies the input air and a recirculating system which ensures substantially laminar, constant velocity air flow, controllable humidity, and steady state conditions throughout at least a portion of the chamber. Particles are introduced into the chamber from a particle generator through a series of output ports that ensure a uniform concentration of particles throughout at least a portion of the chamber. Substantially constant conditions are achieved by constantly introducing new particles into the chamber, withdrawing a continuous flow of particle-laden air from the chamber, removing essentially all the particles from the particle-laden air withdrawn from the chamber and introducing a continuous flow of filtered air into the chamber. Additionally provisions for monitoring particle concentrations and size distribution, for controlling the relative humidity in the chamber, and for carrying out electrical aging and testing can be incorporated.
摘要翻译：本发明体现在用于评估受控量的良好表征的离子或其它颗粒对电子部件的可靠性的影响的装置中。该室包括净化输入空气的高效过滤器和确保在腔室的至少一部分上基本上层流，恒定速度气流，可控湿度和稳态条件的再循环系统。颗粒通过一系列输出端口从颗粒发生器引入室中，确保颗粒在室的至少一部分上的均匀浓度。通过不断地将新的颗粒引入室中来实现基本上恒定的条件，从室中取出连续的含颗粒的空气流，基本上将所有的颗粒从从室中排出的载有颗粒的空气中除去，并引入连续的过滤空气流进入房间另外还可以包括用于监测颗粒浓度和尺寸分布，用于控制室内的相对湿度以及进行电老化和测试的规定。

5. 发明授权

US4740430A Magneto-optic memory 失效
标题翻译：磁光存储器
公开(公告)号：US4740430A
公开(公告)日：1988-04-26
申请号：US015900
申请日：1987-02-18
申请人： Robert P. Frankenthal , Robert B. vanDover
发明人： Robert P. Frankenthal , Robert B. vanDover
IPC分类号： G11B11/10 , G11B5/64 , G11B11/105 , H02K1/02 , C03C27/02
CPC分类号： G11B5/64 , G11B11/10586 , H02K1/02 , Y10S428/928 , Y10T428/12597 , Y10T428/12674 , Y10T428/12743 , Y10T428/12806 , Y10T428/12812 , Y10T428/12819 , Y10T428/12847 , Y10T428/12931
摘要： Certain magnetic alloys are useful for a variety of applications including for magneto-optic memory storage media (optical disks). These magnetic alloys are difficult to protect against composition alteration through such processes as corrosion, oxidation, diffusion, etc. The invention is a multiple-layer structure which protects the magnetic alloys against diffusion as well as corrosion and oxidation without affecting performance of the magnetic alloy in the optical disk. Such magnetic memory storage devices exhibit high bit density and long life. They are erasable and inexpensive and highly advantageous for use in high-bit memory storage devices.

6. 发明授权

US5356526A Copper-based metallizations for hybrid integrated circuits 失效
标题翻译：用于混合集成电路的铜基金属化
公开(公告)号：US5356526A
公开(公告)日：1994-10-18
申请号：US139499
申请日：1993-10-20
申请人： Robert P. Frankenthal , Ajibola O. Ibidunni , Dennis L. Krause
发明人： Robert P. Frankenthal , Ajibola O. Ibidunni , Dennis L. Krause
IPC分类号： H01L21/28 , H01L21/52 , H01L21/768 , H01L23/12 , H01L23/498 , H01L23/522 , H01L27/01 , H05K1/09 , H05K3/06 , H05K3/10 , H05K3/24 , H05K3/38 , H05K3/40 , C25D5/02 , H01L21/288
CPC分类号： H05K3/244 , C23C28/021 , C25D5/022 , C25D5/12 , H01L23/49866 , H05K3/108 , H05K3/388 , H01L2924/0002 , H05K2203/0723 , H05K3/062 , H05K3/243
摘要： A new metallization is described which is a composite of subsequent metal layers beginning with a layer of titanium and having in an ascending order the following composition: Ti--TiPd--Cu--Ni--Au. TiPd is an alloy of titanium and palladium containing from 0.3 to 14 weight percent Pd, by the weight of the alloy. The TiPd alloy is etchable in an aqueous HF solution containing from 0.5 to 2.0 and higher, preferably from 0.5 to 1.2 weight percent HF. The use of the TiPd alloy avoids the occurrence of Pd residues remaining after the etching of Ti layer and lift-off (rejection etching) of Pd layer in a prior art Ti--Pd--Cu--Ni--Au metallization. Ti and TiPd layers are present in a thickness ranging from 100 to 300 nm and from 50 to 300 nm, respectively, and in a total minimum thickness needed to maintain bonding characteristics of the metallization. The metallization is suitable for use in various circuits including integrated circuits (ICs), hybrid integrated circuits (HICs), film integrated circuits (FICs), multi-chip modules (MCMs), etc.
摘要翻译：描述了一种新的金属化，其是随后的金属层的复合材料，其以钛层开始并且具有以下组成的升序：Ti-TiPd-Cu-Ni-Au。 TiPd是以合金重量计含有0.3-14重量％Pd的钛和钯的合金。 TiPd合金可以在含有0.5至2.0和更高，优选0.5至1.2重量％HF的HF水溶液中进行刻蚀。 TiPd合金的使用避免了在现有技术的Ti-Pd-Cu-Ni-Au金属化后，蚀刻Ti层之后残留的Pd残余物和Pd层的剥离（拒绝蚀刻）的发生。 Ti和TiPd层分别以100至300nm和50至300nm的厚度存在，并且以维持金属化的结合特性所需的总最小厚度存在。金属化适用于各种电路，包括集成电路（IC），混合集成电路（HIC），胶片集成电路（FIC），多芯片模块（MCM）等。

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