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1. 发明申请

US20070292996A1 METHOD AND STRUCTURE TO PROCESS THICK AND THIN FINS AND VARIABLE FIN TO FIN SPACING 有权
标题翻译：加工薄膜和薄膜的方法和结构以及可变的熔化到熔融间隙
公开(公告)号：US20070292996A1
公开(公告)日：2007-12-20
申请号：US11846544
申请日：2007-08-29
申请人： Wagdi Abadeer , Jeffrey Brown , Kiran Chatty , Robert Gauthler , Jed Rankin , William Tonti
发明人： Wagdi Abadeer , Jeffrey Brown , Kiran Chatty , Robert Gauthler , Jed Rankin , William Tonti
IPC分类号： H01L21/84
CPC分类号： B07C5/344 , G01R31/2831
摘要： Disclosed is an integrated circuit with multiple semiconductor fins having different widths and variable spacing on the same substrate. The method of forming the circuit incorporates a sidewall image transfer process using different types of mandrels. Fin thickness and fin-to-fin spacing are controlled by an oxidation process used to form oxide sidewalls on the mandrels, and more particularly, by the processing time and the use of intrinsic, oxidation-enhancing and/or oxidation-inhibiting mandrels. Fin thickness is also controlled by using sidewalls spacers combined with or instead of the oxide sidewalls. Specifically, images of the oxide sidewalls alone, images of sidewall spacers alone, and/or combined images of sidewall spacers and oxide sidewalls are transferred into a semiconductor layer to form the fins. The fins with different thicknesses and variable spacing can be used to form a single multiple-fin FET or, alternatively, various single-fin and/or multiple-fin FETs.
摘要翻译：公开了一种集成电路，其具有在相同基板上具有不同宽度和可变间隔的多个半导体散热片。形成电路的方法包括使用不同类型的心轴的侧壁图像转印过程。翅片厚度和翅片翅片间距由用于在心轴上形成氧化物侧壁的氧化工艺控制，更具体地，通过处理时间和使用固有的，氧化增强的和/或氧化抑制的心轴来控制。翅片厚度也通过使用与氧化物侧壁结合或代替氧化物侧壁的侧壁间隔来控制。具体地，单独的氧化物侧壁的图像，侧壁间隔物的图像和/或侧壁间隔物和氧化物侧壁的组合图像被转移到半导体层中以形成散热片。可以使用具有不同厚度和可变间隔的散热片来形成单个多鳍FET，或者替代地，各种单鳍和/或多鳍FET。

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