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    • 1. 发明申请
    • RADIATION DETECTOR
    • 辐射探测器
    • US20140246598A1
    • 2014-09-04
    • US14009141
    • 2012-04-05
    • Robert D. HerpstVladimir Yakimovich
    • Robert D. HerpstVladimir Yakimovich
    • G01T1/24H01L31/08H01L31/0296
    • G01T1/24H01L31/02963H01L31/02966H01L31/085H01L31/1832H01L31/1864
    • The present invention provides a radiation detection system for detecting X-ray and gamma rays featuring Cd1-xMgx Te in solid solution as a crystal semiconductor and electrical connection means. The crystal has a composition in the range of Cd0.99Mg0.01Te to Cd0.71Mg0.29Te and may be doped with indium or another Group III element, which may be suitable for use at room temperature as well as controlled temperatures. The present invention further provides a method for detecting X- or gamma ray radiation by (a) providing a solid solution Cd1-xMgxTe crystal in the composition range of Cd0.99Mg0.01Te to Cd0.71Mg0.29Te; (b) providing an electrical contact means for connecting the Cd1-xMgxTe crystal to an amplification, measurement, identification or imaging means; and (c) detecting the presence of the X- or gamma ray radiation.
    • 本发明提供了一种用于检测作为晶体半导体的固体溶液中具有Cd1-xMgxTe的X射线和γ射线的放射线检测系统和电连接装置。 该晶体具有Cd0.99Mg0.01Te至Cd0.71Mg0.29Te范围内的组成,并且可以掺杂铟或另一种III族元素,其可适用于在室温和受控温度下使用。 本发明还提供了一种通过(a)在Cd0.99Mg0.01Te与Cd0.71Mg0.29Te的组成范围内提供固溶Cd1-xMgxTe晶体来检测X射线或γ射线辐射的方法; (b)提供用于将Cd1-xMgxTe晶体连接到放大,测量,识别或成像装置的电接触装置; 和(c)检测X射线或γ射线辐射的存在。
    • 3. 发明申请
    • RADIATION DETECTOR
    • 辐射探测器
    • US20160299238A1
    • 2016-10-13
    • US15088230
    • 2016-04-01
    • Robert D. HerpstVladimir Yakimovich
    • Robert D. HerpstVladimir Yakimovich
    • G01T1/24H01L31/08H01L31/18H01L31/0296
    • G01T1/24H01L31/02963H01L31/02966H01L31/085H01L31/1832H01L31/1864
    • The present invention provides a radiation detection system for detecting X-ray and gamma rays featuring Cd1-xMgxTe in solid solution as a crystal semiconductor and electrical connection means. The crystal has a composition in the range of Cd0.99Mg0.01Te to Cd0.71Mg0.29Te and may be doped with indium or another Group III element, which may be suitable for use at room temperature as well as controlled temperatures. The present invention further provides a method for detecting X- or gamma ray radiation by (a) providing a solid solution Cd1-xMgxTe crystal in the composition range of Cd0.99Mg0.01Te to Cd0.71Mg0.29Te; (b) providing an electrical contact means for connecting the Cd1-xMgxTe crystal to an amplification, measurement, identification or imaging means; and (c) detecting the presence of the X- or gamma ray radiation.
    • 本发明提供了一种用于检测作为晶体半导体和电连接装置的固溶体中具有Cd1-xMgxTe的X射线和γ射线的放射线检测系统。 该晶体具有Cd0.99Mg0.01Te至Cd0.71Mg0.29Te范围内的组成,并且可以掺杂铟或另一种III族元素,其可适用于在室温和受控温度下使用。 本发明还提供了一种通过(a)在Cd0.99Mg0.01Te与Cd0.71Mg0.29Te的组成范围内提供固溶Cd1-xMgxTe晶体来检测X射线或γ射线辐射的方法; (b)提供用于将Cd1-xMgxTe晶体连接到放大,测量,识别或成像装置的电接触装置; 和(c)检测X射线或γ射线辐射的存在。
    • 7. 发明授权
    • Radiation detector
    • 辐射检测器
    • US09329282B2
    • 2016-05-03
    • US14009141
    • 2012-04-05
    • Robert D. HerpstVladimir Yakimovich
    • Robert D. HerpstVladimir Yakimovich
    • H01L27/146G01T1/24H01L31/0296H01L31/08
    • G01T1/24H01L31/02963H01L31/02966H01L31/085H01L31/1832H01L31/1864
    • The present invention provides a radiation detection system for detecting X-ray and gamma rays featuring Cd1-xMgxTe in solid solution as a crystal semiconductor and electrical connection means. The crystal has a composition in the range of Cd0.99Mg0.01Te to Cd0.71Mg0.29Te and may be doped with indium or another Group III element, which may be suitable for use at room temperature as well as controlled temperatures. The present invention further provides a method for detecting X- or gamma ray radiation by (a) providing a solid solution Cd1-xMgxTe crystal in the composition range of Cd0.99Mg0.01Te to Cd0.71Mg0.29Te; (b) providing an electrical contact means for connecting the Cd1-xMgxTe crystal to an amplification, measurement, identification or imaging means; and (c) detecting the presence of the X- or gamma ray radiation.
    • 本发明提供了一种用于检测作为晶体半导体和电连接装置的固溶体中具有Cd1-xMgxTe的X射线和γ射线的放射线检测系统。 该晶体具有Cd0.99Mg0.01Te至Cd0.71Mg0.29Te范围内的组成,并且可以掺杂铟或另一种III族元素,其可适用于在室温和受控温度下使用。 本发明还提供了一种通过(a)在Cd0.99Mg0.01Te与Cd0.71Mg0.29Te的组成范围内提供固溶Cd1-xMgxTe晶体来检测X射线或γ射线辐射的方法; (b)提供用于将Cd1-xMgxTe晶体连接到放大,测量,识别或成像装置的电接触装置; 和(c)检测X射线或γ射线辐射的存在。