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1. 发明申请

US20080036029A1 SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件
公开(公告)号：US20080036029A1
公开(公告)日：2008-02-14
申请号：US11870567
申请日：2007-10-11
申请人： Xuefeng LIU , Rober Rassel , Steven Voldman
发明人： Xuefeng LIU , Rober Rassel , Steven Voldman
IPC分类号： H01L29/00
CPC分类号： H01L29/7436 , H01L27/0262 , H01L29/7378
摘要： A design structure embodied in a machine readable medium used in a design process. The design structure includes a first sub-collector formed in an upper portion of a substrate and a lower portion of a first epitaxial layer, and a second sub-collector formed in an upper portion of the first epitaxial layer and a lower portion of a second epitaxial layer. The design structure additionally includes a reach-through structure connecting the first and second sub-collectors, and an N-well formed in a portion of the second epitaxial layer and in contact with the second sub-collector and the reach-through structure. Also, the design structure includes N+ diffusion regions in contact with the N-well, a P+ diffusion region within the N-well, and shallow trench isolation structures between the N+ and P+ diffusion regions.
摘要翻译：在设计过程中使用的机器可读介质中体现的设计结构。该设计结构包括形成在衬底的上部和第一外延层的下部的第一子集电极和形成在第一外延层的上部中的第二子集电极，外延层。该设计结构还包括连接第一和第二子集电器的通孔结构以及形成在第二外延层的一部分中并与第二子集电极和达到通孔结构接触的N阱。此外，设计结构包括与N阱接触的N +扩散区域，N阱内的P +扩散区域和N +和P +扩散区域之间的浅沟槽隔离结构。

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