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1. 发明申请

US20080318428A1 Method for Achieving Uniform Chemical Mechanical Polishing In Integrated Circuit Manufacturing 审中-公开
标题翻译：在集成电路制造中实现均匀化学机械抛光的方法
公开(公告)号：US20080318428A1
公开(公告)日：2008-12-25
申请号：US12143500
申请日：2008-06-20
申请人： Yi Ding , Xinyu Zhang , Richard Wee-chen Gan
发明人： Yi Ding , Xinyu Zhang , Richard Wee-chen Gan
IPC分类号： H01L21/461
CPC分类号： H01L21/31053 , H01L21/3212 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A method for planarizing a surface in an integrated circuit manufacturing process provides a first film of a first material over a non-uniform surface, such as a surface including isolation trenches. The first material includes, for example, a polysilicon layer to be used to form floating gates in a non-volatile memory integrated circuit. A second film, which is a sacrificial film formed using a second material, such as silicon oxide, is then provided over the first film. Partial removal of the second film is carried out using chemical mechanical polishing until a portion of the first film is exposed using a first slurry that is selective to the first material. Thereafter, the remaining layer of the second film is removed, along with planarization of the surface, using a second slurry that is highly selective, i.e., has a selectivity of the first film to the second film that is greater than a predetermine value (e.g., 16:1).
摘要翻译：用于在集成电路制造工艺中平坦化表面的方法在非均匀表面（例如包括隔离沟槽的表面）上提供第一材料的第一膜。第一材料包括例如用于在非易失性存储器集成电路中形成浮置栅极的多晶硅层。然后在第一膜上提供第二膜，其是使用第二材料形成的牺牲膜，例如氧化硅。使用化学机械抛光进行部分去除第二膜，直到使用对第一材料有选择性的第一浆料暴露第一膜的一部分。此后，使用高度选择性的第二浆料，即第一膜对第二膜的选择性大于预定值（例如，第二膜），除去第二膜的剩余层以及表面的平坦化。，16：1）。

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