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1. 外观设计

USD702090S1 Condiment shaker 有权
标题翻译：调味摇床
公开(公告)号：USD702090S1
公开(公告)日：2014-04-08
申请号：US29454023
申请日：2013-05-06
申请人： Richard Hogg
设计人： Richard Hogg

2. 发明授权

US08659038B2 Semiconductor light source and method of fabrication thereof 失效
标题翻译：半导体光源及其制造方法
公开(公告)号：US08659038B2
公开(公告)日：2014-02-25
申请号：US13375723
申请日：2010-06-09
申请人： Kristian Groom , Richard Hogg
发明人： Kristian Groom , Richard Hogg
IPC分类号： H01L33/00 , H01S3/04 , H01S5/00 , H01S3/00
CPC分类号： H01S5/50 , H01S5/1014 , H01S5/168 , H01S5/205 , H01S5/2202 , H01S5/2209 , H01S5/2231
摘要： Embodiments of the present invention provided a method of fabricating a semiconductor light source structure. The method comprises providing a GaAs substrate; forming a lower cladding layer above the substrate, the lower cladding layer comprising an AIxGa1-xAs alloy; forming an active region above the lower cladding layer, the active region comprising a GaAs separate confinement heterostructure; and forming an upper cladding layer comprising an AIxGa1-xAs alloy above the active region in the form of an elongate stripe bounded on either side by an InGaP current-blocking layer, the elongate stripe defining an index-guided optical waveguide. The stripe is formed such that at least one free end of the stripe is spaced apart from an edge of the substrate in a direction parallel to a longitudinal axis of the stripe such that a portion of the lower cladding layer, active region, current blocking layer and upper cladding layer extend beyond the at least one free end of the stripe thereby to provide an unpumped and laterally unguided window region.
摘要翻译：本发明的实施例提供了一种制造半导体光源结构的方法。该方法包括提供GaAs衬底; 在所述衬底上形成下包层，所述下包层包含Al x Ga 1-x As合金; 在所述下包层上形成有源区，所述有源区包括GaAs分离的限制异质结构; 并且在InGaP电流阻挡层的任一侧上以细长条纹的形式在有源区上方形成包含Al x Ga 1-x As合金的上包层，该细长条限定了折射率导引的光波导。条纹形成为使得条带的至少一个自由端在平行于条纹的纵向轴线的方向上与基底的边缘间隔开，使得下包层的一部分，有源区，电流阻挡层并且上包层延伸超过条带的至少一个自由端，从而提供未抽空和横向未导向的窗口区域。

3. 发明申请

US20110022648A1 Secure Random Number Generator 有权
标题翻译：安全随机数生成器
公开(公告)号：US20110022648A1
公开(公告)日：2011-01-27
申请号：US12934510
申请日：2008-05-23
申请人： Edward B. Harris , Richard Hogg , Ross A. Kohler , Richard J. McPartland , Wayne E. Werner
发明人： Edward B. Harris , Richard Hogg , Ross A. Kohler , Richard J. McPartland , Wayne E. Werner
IPC分类号： G06F7/58
CPC分类号： G06F7/588 , G06F11/1008 , G11C11/412 , G11C2029/0411
摘要： A random number generator circuit includes a first memory having multiple storage elements. Each of the storage elements has an initial state corresponding thereto when powered up by a voltage supply source applied to the first memory. The first memory is operative to generate a first signal including multiple bits indicative of the respective initial states of the storage elements. The random number generator circuit further includes an error correction circuit coupled to the first memory. The error correction circuit is operative to receive the first signal and to correct at least one bit in the first signal that is not repeatable upon successive applications of power to the first memory to thereby generate a second signal. The second signal is a random number that is repeatable upon successive applications of power to the first memory.
摘要翻译：随机数发生器电路包括具有多个存储元件的第一存储器。当由施加到第一存储器的电压源供电时，每个存储元件具有与之对应的初始状态。第一存储器用于产生包括指示存储元件的相应初始状态的多个位的第一信号。随机数发生器电路还包括耦合到第一存储器的纠错电路。误差校正电路可操作以接收第一信号并且校正第一信号中的至少一个位，其在连续施加电力到第一存储器从而产生第二信号时不重复。第二信号是在连续向第一存储器施加电力时可重复的随机数。

4. 发明授权

US08566377B2 Secure random number generator 有权
标题翻译：安全随机数发生器
公开(公告)号：US08566377B2
公开(公告)日：2013-10-22
申请号：US12934510
申请日：2008-05-23
申请人： Edward B. Harris , Richard Hogg , Ross A. Kohler , Richard J. McPartland , Wayne E. Werner
发明人： Edward B. Harris , Richard Hogg , Ross A. Kohler , Richard J. McPartland , Wayne E. Werner
IPC分类号： G06F7/58
CPC分类号： G06F7/588 , G06F11/1008 , G11C11/412 , G11C2029/0411
摘要： A random number generator circuit includes a first memory having multiple storage elements. Each of the storage elements has an initial state corresponding thereto when powered up by a voltage supply source applied to the first memory. The first memory is operative to generate a first signal including multiple bits indicative of the respective initial states of the storage elements. The random number generator circuit further includes an error correction circuit coupled to the first memory. The error correction circuit is operative to receive the first signal and to correct at least one bit in the first signal that is not repeatable upon successive applications of power to the first memory to thereby generate a second signal. The second signal is a random number that is repeatable upon successive applications of power to the first memory.
摘要翻译：随机数发生器电路包括具有多个存储元件的第一存储器。当由施加到第一存储器的电压源供电时，每个存储元件具有与之对应的初始状态。第一存储器用于产生包括指示存储元件的相应初始状态的多个位的第一信号。随机数发生器电路还包括耦合到第一存储器的纠错电路。误差校正电路可操作以接收第一信号并且校正第一信号中的至少一个位，其在连续施加电力到第一存储器从而产生第二信号时不重复。第二信号是在连续向第一存储器施加电力时可重复的随机数。

5. 发明申请

US20120146068A1 Semiconductor Light Source and Method of Fabrication Thereof 失效
标题翻译：半导体光源及其制造方法
公开(公告)号：US20120146068A1
公开(公告)日：2012-06-14
申请号：US13375723
申请日：2010-06-09
申请人： Kristian Groom , Richard Hogg
发明人： Kristian Groom , Richard Hogg
IPC分类号： H01L33/30
CPC分类号： H01S5/50 , H01S5/1014 , H01S5/168 , H01S5/205 , H01S5/2202 , H01S5/2209 , H01S5/2231
摘要： Embodiments of the present invention provided a method of fabricating a semiconductor light source structure. The method comprises providing a GaAs substrate; forming a lower cladding layer above the substrate, the lower cladding layer comprising an AIxGa1-xAs alloy; forming an active region above the lower cladding layer, the active region comprising a GaAs separate confinement heterostructure; and forming an upper cladding layer comprising an AIxGa1-xAs alloy above the active region in the form of an elongate stripe bounded on either side by an InGaP current-blocking layer, the elongate stripe defining an index-guided optical waveguide. The stripe is formed such that at least one free end of the stripe is spaced apart from an edge of the substrate in a direction parallel to a longitudinal axis of the stripe such that a portion of the lower cladding layer, active region, current blocking layer and upper cladding layer extend beyond the at least one free end of the stripe thereby to provide an unpumped and laterally unguided window region.
摘要翻译：本发明的实施例提供了一种制造半导体光源结构的方法。该方法包括提供GaAs衬底; 在所述衬底上形成下包层，所述下包层包含Al x Ga 1-x As合金; 在所述下包层上形成有源区，所述有源区包括GaAs分离的限制异质结构; 并且在InGaP电流阻挡层的任一侧上以细长条纹的形式在有源区上方形成包括Al x Ga 1-x As合金的上包层，该细长条限定了折射率引导光波导。条纹形成为使得条带的至少一个自由端在平行于条纹的纵向轴线的方向上与基底的边缘间隔开，使得下包层的一部分，有源区，电流阻挡层并且上包层延伸超过条带的至少一个自由端，从而提供未抽空和横向未导向的窗口区域。

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