会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Method of forming iridium oxide local interconnect
    • 形成氧化铱局部互连的方法
    • US5985713A
    • 1999-11-16
    • US183545
    • 1998-10-29
    • Richard A. Bailey
    • Richard A. Bailey
    • H01L21/02H01L21/768H01L27/115H01L29/76G11C11/22G11C11/24
    • H01L27/11502H01L21/76895H01L28/60H01L28/55
    • An iridium oxide local interconnect method for a ferroelectric memory cell includes the steps of forming a conductive layer that extends from a source/drain contact of the transistor proximate to an electrode contact of the ferroelectric capacitor and forming an iridium oxide local interconnect extending from the source/drain contact of the transistor to the electrode contact of the ferroelectric capacitor. The conductive layer is laterally terminated not less than one-half micron from the electrode contact of the ferroelectric capacitor. The conductive layer can include an upper iridium layer and a bottom titanium nitride layer, or can include a single layer of completely reacted titanium nitride. After the local interconnect is formed a top oxide layer is deposited. A late recovery anneal is then performed in oxygen at an elevated temperature to rejuvenate the electrical characteristics of the ferroelectric capacitor. Finally, a bit line contact is opened and metalized.
    • 用于铁电存储单元的铱氧化物局部互连方法包括以下步骤:形成从晶体管的源极/漏极接触端延伸到强电介质电容器的电极接触处的导电层,并形成从源极延伸的氧化铱局部互连 /漏极接触到铁电电容器的电极接触。 导电层的横向端接不小于铁电电容器的电极接触半微米。 导电层可以包括上铱层和底部氮化钛层,或者可以包括单层完全反应的氮化钛。 在形成局部互连之后,沉积顶部氧化物层。 然后在升高的温度下在氧中进行后恢复退火,以恢复铁电电容器的电特性。 最后,打开一个位线接触并进行金属化。
    • 5. 发明授权
    • Iridium oxide local interconnect
    • 铱氧化物局部互连
    • US5838605A
    • 1998-11-17
    • US618884
    • 1996-03-20
    • Richard A. Bailey
    • Richard A. Bailey
    • H01L21/02H01L21/768H01L27/115H01L29/78G11C11/22
    • H01L27/11502H01L21/76895H01L28/60H01L28/55
    • An iridium oxide local interconnect method for a ferroelectric memory cell includes the steps of forming a conductive layer that extends from a source/drain contact of the transistor proximate to an electrode contact of the ferroelectric capacitor and forming an iridium oxide local interconnect extending from the source/drain contact of the transistor to the electrode contact of the ferroelectric capacitor. The conductive layer is laterally terminated not less than one-half micron from the electrode contact of the ferroelectric capacitor. The conductive layer can include an upper iridium layer and a bottom titanium nitride layer, or can include a single layer of completely reacted titanium nitride. After the local interconnect is formed a top oxide layer is deposited. A late recovery anneal is then performed in oxygen at an elevated temperature to rejuvenate the electrical characteristics of the ferroelectric capacitor. Finally, a bit line contact is opened and metalized.
    • 用于铁电存储单元的铱氧化物局部互连方法包括以下步骤:形成从晶体管的源极/漏极接触端延伸到强电介质电容器的电极接触处的导电层,并形成从源极延伸的氧化铱局部互连 /漏极接触到铁电电容器的电极接触。 导电层的横向端接不小于铁电电容器的电极接触半微米。 导电层可以包括上铱层和底部氮化钛层,或者可以包括单层完全反应的氮化钛。 在形成局部互连之后,沉积顶部氧化物层。 然后在升高的温度下在氧中进行后恢复退火,以恢复铁电电容器的电特性。 最后,打开一个位线接触并进行金属化。
    • 7. 发明授权
    • Cable storage device
    • 电缆存储设备
    • US06517022B1
    • 2003-02-11
    • US09871786
    • 2001-06-01
    • Richard A. Bailey
    • Richard A. Bailey
    • B65H7530
    • B65H75/40B65H75/4471
    • A cable storage device for providing a storage for cable. The cable storage device includes a housing assembly including a housing member; and also includes a handle member being attached to an exterior of the housing member; and further includes a spool member being rotatably disposed in the housing member and being adapted to carry a cable; and also includes a crank member being attached to the spool member for turning the spool member to take up the cable; and further includes bracket members being securely attached to the housing member and being adapted to support an end portion of the cable.
    • 一种用于提供电缆存储的电缆存储装置。 电缆存储装置包括壳体组件,其包括壳体构件; 并且还包括附接到所述壳体构件的外部的把手构件; 并且还包括可旋转地设置在所述壳体构件中并且适于承载电缆的卷轴构件; 并且还包括曲柄构件,该曲柄构件附接到卷轴构件,用于使卷筒构件转动以卷绕缆索; 并且还包括支架构件,其牢固地附接到所述壳体构件并且适于支撑所述电缆的端部。
    • 9. 发明授权
    • Process for fabricating transistors using composite nitride structure
    • 使用复合氮化物结构制造晶体管的工艺
    • US5610099A
    • 1997-03-11
    • US267278
    • 1994-06-28
    • E. Henry StevensRichard A. BaileyThomas C. Taylor
    • E. Henry StevensRichard A. BaileyThomas C. Taylor
    • H01L21/285H01L21/336H01L21/283
    • H01L29/6659H01L21/28518
    • In fabricating a source/drain electrode of an integrated circuit transistor and a contact window for it: (1) establishing a structure with a window over the source/drain region next to a gate electrode and isolation structure; (2) establishing a dielectric layer covering the isolation structure, the window, and gate electrode; (3) implanting a moderate concentration of impurities into the source/drain region through said dielectric layer so that the moderate concentration region extends partially under the gate electrode; (4) removing the horizontal portions of the dielectric layer with an anisotropic etch thereby leaving the dielectric on vertical side walls; (5) establishing a region of titanium silicide over the moderately dosed source/drain region and establishing a titanium nitride layer over the isolation structure, windows, and gate electrode; (6) establishing a layer of silicon nitride over the titanium nitride layer; (7) implanting the substrate with a relatively heavier dose of ions through the silicon nitride, titanium nitride, and titanium silicide layers to create a heavier concentration source/drain region intersecting said moderate concentration region, where the heavy concentration region does not underlie the gate electrode; (8) patterning the silicon nitride layer; (9) using the patterned silicon nitride layer as a mask to pattern the titanium nitride layer; (10) adding thick interlevel dielectric over the patterned nitride layers; (11) opening windows over the electrodes; and (12) adding contact material in said windows.
    • 在制造集成电路晶体管的源极/漏极电极及其接触窗口时:(1)在栅极电极和隔离结构旁边的源极/漏极区域上建立具有窗口的结构; (2)建立覆盖隔离结构,窗口和栅电极的电介质层; (3)通过所述电介质层将中等浓度的杂质注入源极/漏极区域,使得中等浓度区域部分地延伸到栅电极下方; (4)用各向异性蚀刻去除电介质层的水平部分,从而将电介质留在垂直侧壁上; (5)在中等剂量的源极/漏极区域上建立硅化钛区域,并在隔离结构,窗口和栅电极上建立氮化钛层; (6)在氮化钛层上建立氮化硅层; (7)通过氮化硅,氮化钛和硅化钛层将相对较重剂量的离子注入衬底以产生与所述中等浓度区域相交的较重的浓度源/漏区,其中重浓度区域不位于栅极 电极; (8)构图氮化硅层; (9)使用图案化的氮化硅层作为掩模来图案化氮化钛层; (10)在图案化的氮化物层上添加厚的层间电介质; (11)在电极上打开窗户; 和(12)在所述窗口中添加接触材料。