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1. 发明申请

US20120098600A1 GAIN CONTROL IN A SHARED RF FRONT-END PATH FOR DIFFERENT STANDARDS THAT USE THE SAME FREQUENCY BAND 有权
标题翻译：在使用相同频带的不同标准的共享RF前端路径中增益控制
公开(公告)号：US20120098600A1
公开(公告)日：2012-04-26
申请号：US13273487
申请日：2011-10-14
申请人： Saeed Chehrazi , Renaldi Winoto , Jinho Park
发明人： Saeed Chehrazi , Renaldi Winoto , Jinho Park
IPC分类号： H03G3/20 , H03F3/68
CPC分类号： H04B1/0458 , H03G1/0088 , H03G3/3052 , H04B1/406 , H04B2001/0416
摘要： Disclosed is a radio frequency (RF) communication circuit having an input for receiving an RF signal and providing independently gain controlled signal paths from the input. In a first signal path, the signal is amplified by a constant gain. In a second signal path, the signal is amplified by a constant gain and by a variable gain amplifier.
摘要翻译：公开了一种射频（RF）通信电路，其具有用于接收RF信号的输入并且从输入提供独立的增益受控信号路径。在第一信号路径中，信号被恒定的增益放大。在第二信号路径中，信号被恒定增益放大，并由可变增益放大器放大。

2. 发明授权

US08638168B1 Digital power amplifier 有权
标题翻译：数字功率放大器
公开(公告)号：US08638168B1
公开(公告)日：2014-01-28
申请号：US13490901
申请日：2012-06-07
申请人： David M. Signoff , Li Lin , Renaldi Winoto , Wayne A. Loeb , Shu-Hsien Liao , Ming He
发明人： David M. Signoff , Li Lin , Renaldi Winoto , Wayne A. Loeb , Shu-Hsien Liao , Ming He
IPC分类号： H03F3/68
CPC分类号： H03F3/68 , H03F1/0244 , H03F3/2175 , H03F3/24
摘要： Systems and methods for power amplification using multiple digital amplifiers are provided. A power amplifier includes a first digital amplifier configured to process a digital input signal to generate a first analog output signal. The first analog output signal is configured to have a magnitude corresponding to amplitude information of the digital input signal. The power amplifier further includes a second digital amplifier configured to process an adjusted digital input signal to generate a second analog output signal. The second analog output signal is configured to have a magnitude corresponding to amplitude information of the adjusted digital input signal. An adjustment module configured to adjust amplitude information and phase information of the digital input signal generates the adjusted digital input signal. The digital input signal is adjusted to control a relationship between the first analog output signal and the second analog output signal.
摘要翻译：提供了使用多个数字放大器进行功率放大的系统和方法。功率放大器包括被配置为处理数字输入信号以产生第一模拟输出信号的第一数字放大器。第一模拟输出信号被配置为具有对应于数字输入信号的振幅信息的幅度。功率放大器还包括第二数字放大器，其被配置为处理经调整的数字输入信号以产生第二模拟输出信号。第二模拟输出信号被配置为具有对应于经调整的数字输入信号的振幅信息的幅度。被配置为调整数字输入信号的幅度信息和相位信息的调整模块生成调整后的数字输入信号。调整数字输入信号以控制第一模拟输出信号和第二模拟输出信号之间的关系。

3. 发明申请

US20080057878A1 Parallel Redundant Single-Electron Device and Method of Manufacture 有权
标题翻译：并联冗余单电子器件及其制造方法
公开(公告)号：US20080057878A1
公开(公告)日：2008-03-06
申请号：US11847008
申请日：2007-08-29
申请人： Robert Staszewski , Renaldi Winoto , Dirk Leipold
发明人： Robert Staszewski , Renaldi Winoto , Dirk Leipold
IPC分类号： H04B1/40
CPC分类号： H01L29/7613 , B82Y10/00 , H01L29/66439 , Y10S977/937
摘要： A method of manufacturing a parallel redundant array of single-electron devices. The method includes (a) providing a mask for diffusing a plurality of n-doped regions defined by a first set of a plurality of active regions, (b) providing a mask for disposing a plurality of polysilicon gates defined by a second set of a plurality of exposed regions, wherein an offset between a first member of the plurality of the exposed region of the first set differs in offset from a second member of the plurality of the exposed region of the second set, and (c) fabricating the parallel redundant array of single-electron devices as a function of the offset.
摘要翻译：一种制造单电子器件的并行冗余阵列的方法。该方法包括：（a）提供掩模，用于扩散由第一组多个有源区限定的多个n掺杂区，（b）提供掩模，用于设置由第二组多个暴露区域，其中第一组的多个暴露区域中的第一构件之间的偏移量偏离第二组的多个暴露区域中的第二构件，以及（c）制造并行冗余作为偏移的函数的单电子器件的阵列。

4. 发明申请

US20080054253A1 Single-Electron Tunnel Junction for a Complementary Metal-Oxide Device and Method of Manufacturing the Same 有权
标题翻译：用于互补金属氧化物器件的单电子隧道结及其制造方法
公开(公告)号：US20080054253A1
公开(公告)日：2008-03-06
申请号：US11846993
申请日：2007-08-29
申请人： Robert Staszewski , Renaldi Winoto , Dirk Leipold
发明人： Robert Staszewski , Renaldi Winoto , Dirk Leipold
IPC分类号： H01L29/76 , H01L21/336
CPC分类号： H01L27/092 , H01L29/66151 , H01L29/88 , Y10S438/979 , Y10S977/937
摘要： A method of providing a p-type substrate, disposing a pad oxide layer on the p-type substrate, disposing a nitride layer on the pad oxide layer, forming a nitride window in the nitride layer, disposing a field oxide in the nitride window, disposing a polysilicon gate over the field oxide, and diffusing a n-doped region in the p-type substrate, thereby forming at least one single-electron tunnel junction between the polysilicon gate and the n-doped region.
摘要翻译：一种提供p型衬底的方法，在p型衬底上设置焊盘氧化物层，在衬垫氧化物层上设置氮化物层，在氮化物层中形成氮化物窗，在氮化物窗中设置场氧化物，在场氧化物上设置多晶硅栅极，并扩散p型衬底中的n掺杂区域，从而在多晶硅栅极和n掺杂区域之间形成至少一个单电子隧道结。

5. 发明申请

US20120142298A1 RF PEAK DETECTION SCHEME USING BASEBAND CIRCUITS 有权
标题翻译：使用基带电路的RF峰值检测方案
公开(公告)号：US20120142298A1
公开(公告)日：2012-06-07
申请号：US13308325
申请日：2011-11-30
申请人： Renaldi Winoto , Jinho Park
发明人： Renaldi Winoto , Jinho Park
IPC分类号： H04B1/10
CPC分类号： H04B17/0062 , H03G3/3068 , H04B1/10 , H04B17/21
摘要： A receiver includes an antenna configured to receive a set of RF signals, and a low-noise amplifier (LNA) coupled to the antenna and amplify the set of RF signals to generate a set of amplified signals. The receiver further includes a down-conversion mixer configured to down convert the set of amplified signals to baseband frequencies. The receiver further includes a low-pass filter configured to filter from the set of amplified signals to baseband frequencies an out-of-band signal. The receiver further includes a high-pass filter configured to reverse the filtering of the low-pass filter. The receiver further includes a peak detector configured to determine whether the LNA is operating at saturation; and an automatic-gain controller configured to decrease a gain of the LNA based on the determination of the peak detector.
摘要翻译：接收机包括被配置为接收一组RF信号的天线以及耦合到天线的低噪声放大器（LNA），并且放大该RF信号集合以产生一组放大信号。接收机还包括一个下变频混频器，配置成将放大信号的集合下变频为基带频率。所述接收器还包括低通滤波器，其被配置为从所述放大信号集合过滤到基带频率的带外信号。接收机还包括被配置为反转低通滤波器的滤波的高通滤波器。接收器还包括配置成确定LNA是否工作在饱和状态的峰值检测器; 以及自动增益控制器，被配置为基于峰值检测器的确定来降低LNA的增益。

6. 发明授权

US08017935B2 Parallel redundant single-electron device and method of manufacture 有权
标题翻译：并联冗余单电子器件及其制造方法
公开(公告)号：US08017935B2
公开(公告)日：2011-09-13
申请号：US11847008
申请日：2007-08-29
申请人： Robert B. Staszewski , Renaldi Winoto , Dirk Leipold
发明人： Robert B. Staszewski , Renaldi Winoto , Dirk Leipold
IPC分类号： H01L33/04
CPC分类号： H01L29/7613 , B82Y10/00 , H01L29/66439 , Y10S977/937
摘要： A method of manufacturing a parallel redundant array of single-electron devices. The method includes (a) providing a mask for diffusing a plurality of n-doped regions defined by a first set of a plurality of active regions, (b) providing a mask for disposing a plurality of polysilicon gates defined by a second set of a plurality of exposed regions, wherein an offset between a first member of the plurality of the exposed region of the first set differs in offset from a second member of the plurality of the exposed region of the second set, and (c) fabricating the parallel redundant array of single-electron devices as a function of the offset.
摘要翻译：一种制造单电子器件的并行冗余阵列的方法。该方法包括：（a）提供掩模，用于扩散由第一组多个有源区限定的多个n掺杂区，（b）提供掩模，用于设置由第二组多个暴露区域，其中第一组的多个暴露区域中的第一构件之间的偏移量偏离第二组的多个暴露区域中的第二构件，以及（c）制造并行冗余作为偏移的函数的单电子器件的阵列。

7. 发明授权

US07567138B2 Single-electron injection/extraction device for a resonant tank circuit and method of operation thereof 有权
标题翻译：用于谐振回路的单电子注入/提取装置及其操作方法
公开(公告)号：US07567138B2
公开(公告)日：2009-07-28
申请号：US11846987
申请日：2007-08-29
申请人： Robert B. Staszewski , Renaldi Winoto , Dirk Leipold
发明人： Robert B. Staszewski , Renaldi Winoto , Dirk Leipold
IPC分类号： H03K3/313 , H03B5/12
CPC分类号： H03B1/04 , H03B5/12 , H03B2202/027 , H03B2202/076
摘要： A system for reducing phase-noise in a resonant tank circuit. The system includes a single-electron device configured to inject a single electron into the oscillator circuit tank circuit. The system further includes a synchronizer coupled to the single-electron device and configured to cause the single-electron device to inject the single electron into the resonant tank circuit at a phase based on an extreme (maximum or minimum) electrical characteristic output of the resonant tank circuit.
摘要翻译：一种降低谐振回路中相位噪声的系统。该系统包括被配置为将单个电子注入到振荡器电路槽电路中的单电子器件。该系统还包括耦合到单电子器件并被配置为使得单电子器件基于谐振的极端（最大或最小）电特性输出的相位将单个电子注入到谐振回路中的同步器坦克回路。

8. 发明申请

US20080061892A1 Single-Electron Injection/Extraction Device for a Resonant Tank Circuit and Method of Operation Thereof 有权
标题翻译：用于谐振槽电路的单电子注入/提取装置及其操作方法
公开(公告)号：US20080061892A1
公开(公告)日：2008-03-13
申请号：US11846987
申请日：2007-08-29
申请人： Robert Staszewski , Renaldi Winoto , Dirk Leipold
发明人： Robert Staszewski , Renaldi Winoto , Dirk Leipold
IPC分类号： H03B28/00 , H04B1/40
CPC分类号： H03B1/04 , H03B5/12 , H03B2202/027 , H03B2202/076
摘要： A system for reducing phase-noise in a resonant tank circuit. The system includes a single-electron device configured to inject a single electron into the oscillator circuit tank circuit. The system further includes a synchronizer coupled to the single-electron device and configured to cause the single-electron device to inject the single electron into the resonant tank circuit at a phase based on an extreme (maximum or minimum) electrical characteristic output of the resonant tank circuit.
摘要翻译：一种降低谐振回路中相位噪声的系统。该系统包括被配置为将单个电子注入到振荡器电路槽电路中的单电子器件。该系统还包括耦合到单电子器件并被配置为使得单电子器件基于谐振的极端（最大或最小）电特性输出的相位将单个电子注入到谐振回路中的同步器坦克回路。

9. 发明授权

US08838042B2 RF front-end with integrated T/R switch 有权
标题翻译：射频前端集成了T / R开关
公开(公告)号：US08838042B2
公开(公告)日：2014-09-16
申请号：US13107729
申请日：2011-05-13
申请人： Yuan Lu , Renaldi Winoto , Jinho Park , Li Lin , Xinhua Chen , Ming He , David Signoff , Wayne Loeb
发明人： Yuan Lu , Renaldi Winoto , Jinho Park , Li Lin , Xinhua Chen , Ming He , David Signoff , Wayne Loeb
IPC分类号： H04B1/38 , H04B1/48
CPC分类号： H04B1/48 , H04B1/18
摘要： Disclosed is a transmit/receive circuit arrangement wherein a transceiver circuit including a transmit/receive switch is fabricated on an integrated circuit chip. A matching network is wholly disposed off-chip relative to the integrated circuit chip. In embodiments, at least a portion of the matching network is formed off-chip and a portion of the matching network is formed on-chip.
摘要翻译：公开了一种发射/接收电路装置，其中在集成电路芯片上制造包括发射/接收开关的收发器电路。匹配网络相对于集成电路芯片完全设置在片外。在实施例中，匹配网络的至少一部分形成在片外，匹配网络的一部分形成在芯片上。

10. 发明授权

US08688066B2 RF peak detection scheme using baseband circuits 有权
标题翻译：使用基带电路的RF峰值检测方案
公开(公告)号：US08688066B2
公开(公告)日：2014-04-01
申请号：US13308325
申请日：2011-11-30
申请人： Renaldi Winoto , Jinho Park
发明人： Renaldi Winoto , Jinho Park
IPC分类号： H04B17/00 , H04B1/06 , H04B7/00
CPC分类号： H04B17/0062 , H03G3/3068 , H04B1/10 , H04B17/21
摘要： A receiver includes an antenna configured to receive a set of RF signals, and a low-noise amplifier (LNA) coupled to the antenna and amplify the set of RF signals to generate a set of amplified signals. The receiver further includes a down-conversion mixer configured to down convert the set of amplified signals to baseband frequencies. The receiver further includes a low-pass filter configured to filter from the set of amplified signals to baseband frequencies an out-of-band signal. The receiver further includes a high-pass filter configured to reverse the filtering of the low-pass filter. The receiver further includes a peak detector configured to determine whether the LNA is operating at saturation; and an automatic-gain controller configured to decrease a gain of the LNA based on the determination of the peak detector.
摘要翻译：接收机包括被配置为接收一组RF信号的天线以及耦合到天线的低噪声放大器（LNA），并且放大该RF信号集合以产生一组放大信号。接收机还包括一个下变频混频器，配置成将放大信号的集合下变频为基带频率。所述接收器还包括低通滤波器，其被配置为从所述放大信号集合过滤到基带频率的带外信号。接收机还包括被配置为反转低通滤波器的滤波的高通滤波器。接收器还包括配置成确定LNA是否工作在饱和状态的峰值检测器; 以及自动增益控制器，被配置为基于峰值检测器的确定来降低LNA的增益。

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