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1. 发明授权

US08987701B2 Phase transition memories and transistors 有权
标题翻译：相变存储器和晶体管
公开(公告)号：US08987701B2
公开(公告)日：2015-03-24
申请号：US13322379
申请日：2010-05-28
申请人： Sandip Tiwari , Ravishankar Sundararaman , Sang Hyeon Lee , Moonkyung Kim
发明人： Sandip Tiwari , Ravishankar Sundararaman , Sang Hyeon Lee , Moonkyung Kim
IPC分类号： H01L47/00 , H01L29/68 , H01L29/51
CPC分类号： H01L29/685 , H01L29/51 , H01L29/513 , H01L29/517
摘要： In one embodiment there is set forth a method comprising providing a semiconductor structure having an electrode, wherein the providing includes providing a phase transition material region and wherein the method further includes imparting energy to the phase transition material region to induce a phase transition of the phase transition material region. By inducing a phase transition of the phase transition material region, a state of the semiconductor structure can be changed. There is further set forth an apparatus comprising a structure including an electrode and a phase transition material region, wherein the apparatus is operative for imparting energy to the phase transition material region to induce a phase transition of the phase transition material region without the phase transition of the phase transition material region being dependent on electron transport through the phase transition material region.
摘要翻译：在一个实施例中，提出了一种方法，包括提供具有电极的半导体结构，其中所述提供包括提供相变材料区域，并且其中所述方法还包括赋予相变材料区域能量以引起相位的相变过渡材料区域。通过引起相变材料区域的相变，可以改变半导体结构的状态。还提出了一种装置，其包括包括电极和相变材料区域的结构，其中该装置可操作以将能量传递给相变材料区域，以引起相变材料区域的相变而不发生相变相变材料区域依赖于通过相变材料区域的电子传输。

2. 发明授权

US08080839B2 Electro-mechanical transistor 有权
标题翻译：机电晶体管
公开(公告)号：US08080839B2
公开(公告)日：2011-12-20
申请号：US12549906
申请日：2009-08-28
申请人： Sandip Tiwari , Moon-Kyung Kim , Joshua Mark Rubin , Soo-Doo Chae , Choong-Man Lee , Ravishankar Sundararaman
发明人： Sandip Tiwari , Moon-Kyung Kim , Joshua Mark Rubin , Soo-Doo Chae , Choong-Man Lee , Ravishankar Sundararaman
IPC分类号： H01L29/84
CPC分类号： H01L49/00 , B82Y10/00 , G11C13/025 , G11C23/00
摘要： An electro-mechanical transistor includes a source electrode and a drain electrode spaced apart from each other. A source pillar is between the substrate and the source electrode. A drain pillar is between the substrate and the drain electrode. A moveable channel is spaced apart from the source electrode and the drain electrode. A gate nano-pillar is between the moveable channel and the substrate. A first dielectric layer is between the moveable channel and the gate nano-pillar. A second dielectric layer is between the source pillar and the source electrode. A third dielectric layer is between the drain pillar and the drain electrode.
摘要翻译：机电晶体管包括彼此间隔开的源电极和漏电极。源极柱位于衬底和源电极之间。漏极柱位于衬底和漏电极之间。可移动通道与源电极和漏电极间隔开。门纳米柱位于可移动通道和基板之间。第一电介质层位于可移动沟道和栅极纳米柱之间。第二电介质层位于源极柱和源极之间。第三介电层位于漏极柱和漏极之间。

3. 发明申请

US20120280301A1 PHASE TRANSITION MEMORIES AND TRANSISTORS 有权
标题翻译：相转移记忆和晶体管
公开(公告)号：US20120280301A1
公开(公告)日：2012-11-08
申请号：US13322379
申请日：2010-05-28
申请人： Sandip Tiwari , Ravishankar Sundararaman , Sang Hyeon Lee , Moonkyung Kim
发明人： Sandip Tiwari , Ravishankar Sundararaman , Sang Hyeon Lee , Moonkyung Kim
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/685 , H01L29/51 , H01L29/513 , H01L29/517
摘要： In one embodiment there is set forth a method comprising providing a semiconductor structure having an electrode, wherein the providing includes providing a phase transition material region and wherein the method further includes imparting energy to the phase transition material region to induce a phase transition of the phase transition material region. By inducing a phase transition of the phase transition material region, a state of the semiconductor structure can be changed. There is further set forth an apparatus comprising a structure including an electrode and a phase transition material region, wherein the apparatus is operative for imparting energy to the phase transition material region to induce a phase transition of the phase transition material region without the phase transition of the phase transition material region being dependent on electron transport through the phase transition material region.
摘要翻译：在一个实施例中，提出了一种方法，包括提供具有电极的半导体结构，其中所述提供包括提供相变材料区域，并且其中所述方法还包括赋予相变材料区域能量以引起相位的相变过渡材料区域。通过引起相变材料区域的相变，可以改变半导体结构的状态。还提出了一种装置，其包括包括电极和相变材料区域的结构，其中该装置可操作以将能量传递给相变材料区域，以引起相变材料区域的相变而不发生相变相变材料区域依赖于通过相变材料区域的电子传输。

4. 发明申请

US20110049650A1 Electro-Mechanical Transistor 有权
标题翻译：机电晶体管
公开(公告)号：US20110049650A1
公开(公告)日：2011-03-03
申请号：US12549906
申请日：2009-08-28
申请人： Sandip Tiwari , Moon-Kyung Kim , Joshua Mark Rubin , Soo-Doo Chae , Choong-Man Lee , Ravishankar Sundararaman
发明人： Sandip Tiwari , Moon-Kyung Kim , Joshua Mark Rubin , Soo-Doo Chae , Choong-Man Lee , Ravishankar Sundararaman
IPC分类号： H01L29/84
CPC分类号： H01L49/00 , B82Y10/00 , G11C13/025 , G11C23/00
摘要： An electromechanical transistor includes a source electrode and a drain electrode spaced apart from each other. A source pillar is between the substrate and the source electrode. A drain pillar is between the substrate and the drain electrode. A moveable channel is spaced apart from the source electrode and the drain electrode. A gate nano-pillar is between the moveable channel and the substrate. A first dielectric layer is between the moveable channel and the gate nano-pillar. A second dielectric layer is between the source pillar and the source electrode. A third dielectric layer is between the drain pillar and the drain electrode.
摘要翻译：机电晶体管包括彼此间隔开的源电极和漏电极。源极柱位于衬底和源电极之间。漏极柱位于衬底和漏电极之间。可移动通道与源电极和漏电极间隔开。门纳米柱位于可移动通道和基板之间。第一电介质层位于可移动沟道和栅极纳米柱之间。第二电介质层位于源极柱和源极之间。第三介电层位于漏极柱和漏极之间。

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