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    • 3. 发明授权
    • Method for memory addressing
    • 存储器寻址方法
    • US06400640B2
    • 2002-06-04
    • US09738324
    • 2000-12-18
    • Ramchan WooChi Weon YoonHoi Jun Yoo
    • Ramchan WooChi Weon YoonHoi Jun Yoo
    • G11C800
    • G11C8/10
    • A Row-After-Column memory addressing method. The memory addressing method changes the order of addressing so as to enhance the efficiency of memory addressing. The Row-After-Column memory addressing method of the present invention comprises the steps of activating a column path by generating the column address when the address is input for data access, and activating a row path by generating the row address according to the address. Therefore, pipeline stall arising from inputting the column address (/CAS) subsequent to input of the row address (/RAS) can be eliminated and the speed of memory access can be enhanced.
    • 行后存储器寻址方法。 存储器寻址方法改变了寻址的顺序,以提高存储器寻址的效率。 本发明的行后列存储器寻址方法包括以下步骤:当输入地址用于数据访问时通过产生列地址来激活列路径,并且通过根据地址生成行地址来激活行路径。 因此,可以消除在输入行地址(/ RAS)之后输入列地址(/ CAS)引起的流水线停顿,并且可以提高存储器访问的速度。