专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2011037742A2 VERTICAL MIRROR IN A SILICON PHOTONIC CIRCUIT 审中-公开
标题翻译：硅光子电路中的垂直镜像
公开(公告)号：WO2011037742A2
公开(公告)日：2011-03-31
申请号：PCT/US2010047987
申请日：2010-09-07
申请人： INTEL CORP , HECK JOHN , LIU ANSHENG , MORSE MICHAEL T , RONG HAISHENG
发明人： HECK JOHN , LIU ANSHENG , MORSE MICHAEL T , RONG HAISHENG
IPC分类号： G02B6/122 , G02B6/13
CPC分类号： H01L31/02327 , G02B6/4214
摘要： A vertical total internal reflection (TIR) mirror and fabrication thereof is made by creating a re-entrant profile using crystallographic silicon etching. Starting with an SOI wafer, a deep silicon etch is used to expose the buried oxide layer, which is then wet-etched (in HF), opening the bottom surface of the Si device layer. This bottom silicon surface is then exposed so that in a crystallographic etch, the resulting shape is a re-entrant trapezoid with facets. These facets can be used in conjunction with planar silicon waveguides to reflect the light upwards based on the TIR principle. Alternately, light can be coupled into the silicon waveguides from above the wafer for such purposes as wafer level testing.
摘要翻译：垂直全内反射（TIR）反射镜及其制造是通过使用晶体硅蚀刻产生凹入轮廓而制成的。从SOI晶片开始，使用深硅蚀刻来暴露掩埋氧化物层，然后对其进行湿蚀刻（在HF中），从而打开Si器件层的底表面。然后暴露该底部硅表面，以便在晶体蚀刻中，所得到的形状是具有小平面的凹入梯形。根据TIR原理，这些刻面可以与平面硅波导结合使用，以向上反射光线。或者，可以从晶圆上方将光耦合到硅波导中以用于晶圆级测试等目的。

2. 发明申请

WO2013106008A3 ON-CHIP DIFFRACTION GRATING PREPARED BY CRYSTALLOGRAPHIC WET-ETCH 审中-公开
标题翻译：晶体湿蚀刻制备的芯片衍射衍射
公开(公告)号：WO2013106008A3
公开(公告)日：2013-10-03
申请号：PCT/US2012030759
申请日：2012-03-27
申请人： INTEL CORP , NA YUN-CHUNG , HECK JOHN , RONG HAISHENG
发明人： NA YUN-CHUNG , HECK JOHN , RONG HAISHENG
IPC分类号： G02B5/18 , G02B5/00
CPC分类号： G02B5/1857 , G02B5/1842 , G02B5/1861 , G02B6/02009
摘要： Methods of forming microelectronic structures are described. Embodiments of those methods may include forming a photomask on a (110) silicon wafer substrate, wherein the photomask comprises a periodic array of parallelogram openings, and then performing a timed wet etch on the (110) silicon wafer substrate to form a diffraction grating structure that is etched into the (110) silicon wafer substrate.
摘要翻译：描述形成微电子结构的方法。这些方法的实施例可以包括在（110）硅晶片衬底上形成光掩模，其中光掩模包括平行四边形开口的周期性阵列，然后在（110）硅晶片衬底上执行定时湿蚀刻以形成衍射光栅结构被蚀刻到（110）硅晶片衬底中。

3. 发明申请

WO2013106008A2 ON-CHIP DIFFRACTION GRATING PREPARED BY CRYSTALLOGRAPHIC WET-ETCH 审中-公开
标题翻译：晶体衍射光栅由晶体湿法刻蚀制备
公开(公告)号：WO2013106008A2
公开(公告)日：2013-07-18
申请号：PCT/US2012/030759
申请日：2012-03-27
申请人： INTEL CORPORATION , NA, Yun-Chung , HECK, John , RONG, Haisheng
发明人： NA, Yun-Chung , HECK, John , RONG, Haisheng
IPC分类号： G02B5/18 , G02B5/00
CPC分类号： G02B5/1857 , G02B5/1842 , G02B5/1861 , G02B6/02009
摘要： Methods of forming microelectronic structures are described. Embodiments of those methods may include forming a photomask on a (110) silicon wafer substrate, wherein the photomask comprises a periodic array of parallelogram openings, and then performing a timed wet etch on the (110) silicon wafer substrate to form a diffraction grating structure that is etched into the (110) silicon wafer substrate.
摘要翻译：描述了形成微电子结构的方法。这些方法的实施例可以包括在（110）硅晶片衬底上形成光掩模，其中光掩模包括平行四边形开口的周期性阵列，然后在（110）硅晶片衬底上执行定时湿法刻蚀以形成衍射光栅结构蚀刻到（110）硅晶片衬底中。

4. 发明申请

WO2011037686A1 OPTICAL MODULATOR UTILIZING WAFER BONDING TECHNOLOGY 审中-公开
标题翻译：光学调制器利用波形粘结技术
公开(公告)号：WO2011037686A1
公开(公告)日：2011-03-31
申请号：PCT/US2010/044139
申请日：2010-08-02
申请人： INTEL CORPORATION , RONG, Haisheng , LIU, Ansheng
发明人： RONG, Haisheng , LIU, Ansheng
IPC分类号： H01L27/12 , G02B6/12
CPC分类号： H01L29/94 , G02F1/025 , G02F2001/0152 , G02F2202/105 , H01L21/76254 , H01L29/66181
摘要： Optical modulator utilizing wafer bonding technology. An embodiment of a method includes etching a silicon on insulator (SOI) wafer to produce a first part of a silicon waveguide structure on a first surface of the SOI wafer, and preparing a second wafer, the second wafer including a layer of crystalline silicon, the second wafer including a first surface of crystalline silicon. The method further includes bonding the first surface of the second wafer with a thin oxide to the first surface of the SOI wafer using a wafer bonding technique, wherein a second part of the silicon waveguide structure is etched in the layer of crystalline silicon.
摘要翻译：采用晶圆键合技术的光调制器。一种方法的实施例包括蚀刻绝缘体上硅（SOI）晶片以在SOI晶片的第一表面上产生硅波导结构的第一部分，以及制备第二晶片，所述第二晶片包括晶体硅层，所述第二晶片包括晶体硅的第一表面。该方法还包括使用晶片接合技术将第二晶片的第一表面与薄氧化物结合到SOI晶片的第一表面，其中硅波导结构的第二部分被蚀刻在晶体硅层中。

5. 发明申请

WO2006078496A1 VARIABLE OPTICAL POWER LIMITER 审中-公开
标题翻译：可变光功率限制
公开(公告)号：WO2006078496A1
公开(公告)日：2006-07-27
申请号：PCT/US2006/000682
申请日：2006-01-05
申请人： INTEL CORPORATION , RONG, Haisheng
发明人： RONG, Haisheng
IPC分类号： G02F1/025 , G02F1/35
CPC分类号： G02F1/3526 , G02F1/025 , G02F2001/0156
摘要： A variable optical power limiter is disclosed. An apparatus according to aspects of the present invention includes an optical waveguide disposed in semiconductor material. An optical beam is to be directed through the optical waveguide. The optical beam is to generate free carriers in the optical waveguide via two-photon absorption in response to an input power level of the optical beam. A diode structure is disposed in the optical waveguide. The diode structure is coupled to be biased to control free carrier lifetimes of the free carriers in the optical waveguide to set an output power of the optical beam to a clamped output power level in response to the bias of the diode structure.
摘要翻译：公开了一种可变光功率限制器。根据本发明的方面的装置包括设置在半导体材料中的光波导。光束将被引导通过光波导。光束是响应于光束的输入功率电平，通过双光子吸收在光波导中产生自由载流子。二极管结构设置在光波导中。二极管结构被耦合以被偏置以控制光波导中的自由载流子的自由载流子寿命，以响应于二极管结构的偏置将光束的输出功率设置为钳位的输出功率电平。

6. 发明申请

WO2006028621A3 TWO-PHOTON ABSORPTION GENERATED CARRIER LIFETIME REDUCTION IN SEMICONDUCTOR WAVEGUIDE FOR SEMICONDUCTOR BASED RAMAN LASER AND AMPLIFIER 审中-公开
公开(公告)号：WO2006028621A3
公开(公告)日：2006-03-16
申请号：PCT/US2005/027631
申请日：2005-08-04
申请人： INTEL CORPORATION , LIU, Ansheng , PANICCIA, Mario , RONG, Haisheng
发明人： LIU, Ansheng , PANICCIA, Mario , RONG, Haisheng
IPC分类号： H01S3/30 , H01S3/063
摘要： A semiconductor based Raman laser and/or amplifier with reduced two-photon absorption generated carrier lifetimes. An apparatus according to embodiments of the present invention includes optical waveguide disposed in semiconductor material and a diode structure disposed in the optical waveguide. The optical waveguide is to be coupled to a pump laser to receive a first optical beam having a first wavelength and a first power level to result in emission of a second optical beam of a second wavelength in the semiconductor waveguide. The diode structure is to be biased to sweep out free carriers from the optical waveguide generated in response to two photon absorption in the optical waveguide.

7. 发明申请

WO2006028621A2 TWO-PHOTON ABSORPTION GENERATED CARRIER LIFETIME REDUCTION IN SEMICONDUCTOR WAVEGUIDE FOR SEMICONDUCTOR BASED RAMAN LASER AND AMPLIFIER 审中-公开
公开(公告)号：WO2006028621A2
公开(公告)日：2006-03-16
申请号：PCT/US2005027631
申请日：2005-08-04
申请人： INTEL CORP , LIU ANSHENG , PANICCIA MARIO , RONG HAISHENG
发明人： LIU ANSHENG , PANICCIA MARIO , RONG HAISHENG
IPC分类号： H01S3/30 , G02B6/12 , G02B6/122 , G02B6/26 , H01S3/063
CPC分类号： G02B6/122 , G02B2006/12097 , H01S3/063 , H01S3/083 , H01S3/0941 , H01S3/30
摘要： A semiconductor based Raman laser and/or amplifier with reduced two-photon absorption generated carrier lifetimes. An apparatus according to embodiments of the present invention includes optical waveguide disposed in semiconductor material and a diode structure disposed in the optical waveguide. The optical waveguide is to be coupled to a pump laser to receive a first optical beam having a first wavelength and a first power level to result in emission of a second optical beam of a second wavelength in the semiconductor waveguide. The diode structure is to be biased to sweep out free carriers from the optical waveguide generated in response to two photon absorption in the optical waveguide.

8. 发明申请

WO2013089755A1 AN EFFICIENT BACKSIDE-EMITTING/COLLECTING GRATING COUPLER 审中-公开
标题翻译：高效的背景发光/收集光栅耦合器
公开(公告)号：WO2013089755A1
公开(公告)日：2013-06-20
申请号：PCT/US2011/065271
申请日：2011-12-15
申请人： INTEL CORPORATION , NA, Yun-chung , RONG, Haisheng
发明人： NA, Yun-chung , RONG, Haisheng
IPC分类号： G02B6/42
CPC分类号： G02B6/12 , G02B6/1228 , G02B6/124 , G02B6/132 , G02B6/136 , G02B6/4204 , G02B6/4214
摘要： Photonic integrated circuit (PIC) chips with backside vertical optical coupler and packaging into an optical transmitter/receiver. A grating-based backside vertical optical coupler functions to couple light to/from a plane in the PIC chip defined by thin film layers through a bulk thickness of the PIC chip substrate to emit/collect via a backside surface of the PIC chip where it is to be coupled by an off-chip component, such as an optical fiber. Embodiments of a grating-based backside vertical optical coupler include a grating coupler with a grating formed in a topside surface of the thin film. A reflector is disposed over the grating coupler to reflect light emitted from the grating coupler through the substrate to emit from the backside of the PIC chip or to reflect light collected from the backside of the PIC chip through the substrate and to the grating coupler.
摘要翻译：具有背面垂直光耦合器的光电集成电路（PIC）芯片，并封装成光发射机/接收机。基于光栅的背面垂直光耦合器用于将光与薄膜层定义的PIC芯片中的平面耦合通过PIC芯片基板的体积厚度，以经由PIC芯片的背面发射/收集，由诸如光纤的片外部件耦合。基于光栅的背面垂直光耦合器的实施例包括具有形成在薄膜的顶侧表面上的光栅的光栅耦合器。反射器设置在光栅耦合器上方以反射从光栅耦合器发射的光通过衬底从PIC芯片的背面发射或者从PIC芯片的背面收集的光通过衬底和光栅耦合器反射。

9. 发明申请

WO2013048411A1 VERTICAL OPTICAL COUPLER FOR PLANAR PHOTONIC CIRCUITS 审中-公开
标题翻译：用于平面光电路的垂直光耦合器
公开(公告)号：WO2013048411A1
公开(公告)日：2013-04-04
申请号：PCT/US2011/053992
申请日：2011-09-29
申请人： INTEL CORPORATION , RONG, Haisheng , GAN, Ofir , SRINIVASAN, Pradeep , BARKAI, Assia , HSIEH, I-wei, Andy , KRISHNAMURTHI, Mahesh , NA, Yun-chung, Neil
发明人： RONG, Haisheng , GAN, Ofir , SRINIVASAN, Pradeep , BARKAI, Assia , HSIEH, I-wei, Andy , KRISHNAMURTHI, Mahesh , NA, Yun-chung, Neil
IPC分类号： G02B6/122
CPC分类号： G02B6/1225 , G02B1/045 , G02B6/1223 , G02B6/14 , G02B6/262 , G02B6/4201
摘要： Described herein are an apparatus, system, and method, for providing a vertical optical coupler (VQC) for planar photonics circuits such as photonics circuits fabricated, on silicon-on-insulator (SOI) wafers. In one embodiment, the VOC comprises a waveguide made from a material having refractive index in a range of 1.45 to 3.45, the waveguide comprising; a first end configured to reflect light nearly vertical by total internal reflection between the waveguide and. another medium, a second end to receive the light for reflection, and a third end to output the reflected, light. The VOC couples with a Si waveguide having a first region including: a first end to receive light; and an inverted, tapered end in the direction of light propagation to output the received, light, wherein the inverted tapered end of the Si waveguide is positioned inside the waveguide.
摘要翻译：本文描述的是用于为在绝缘体上硅（SOI）晶片上制造的诸如光子电路的平面光子电路提供垂直光耦合器（VQC）的装置，系统和方法。在一个实施例中，VOC包括由折射率在1.45至3.45范围内的材料制成的波导，波导包括：第一端被配置为通过波导与波导之间的全内反射来反射几乎垂直的光。另一个介质，第二端接收用于反射的光，以及第三端输出反射的光。 VOC与具有第一区域的Si波导耦合，包括：接收光的第一端; 以及在光传播方向上的反转的锥形端，以输出所接收的光，其中Si波导的倒置的锥形端位于波导内。

10. 发明申请

WO2012134632A2 EFFICIENT SILICON-ON-INSULATOR GRATING COUPLER 审中-公开
标题翻译：高效绝缘子镀层接头
公开(公告)号：WO2012134632A2
公开(公告)日：2012-10-04
申请号：PCT/US2012024073
申请日：2012-02-07
申请人： INTEL CORP , NA YUN-CHUNG N , RONG HAISHENG
发明人： NA YUN-CHUNG N , RONG HAISHENG
IPC分类号： H01S5/10 , G02B6/12
CPC分类号： G01M11/00 , G02B6/1228 , G02B6/124
摘要： An efficient grating coupler for a semiconductor optical mode includes a tapered edge to couple light between waveguide modes constrained by differing waveguide thicknesses. An optical circuit or laser has a waveguide in a rib or strip waveguide section that is of different height (e.g., having different vertical constraints) than a waveguide section that has a grating coupler through which light passes off-circuit. The tapered edge can couple light between the two waveguide sections with very low loss and back-reflection. The low loss and minimal back-reflection enables testing of the photonics circuit on a wafer level, and improved performance through the grating coupler.
摘要翻译：用于半导体光学模式的有效的光栅耦合器包括锥形边缘，以在由不同波导厚度约束的波导模之间耦合光。光学电路或激光器具有与具有不同高度（例如，具有不同的垂直约束）的肋条或带状波导部分中的波导，该波导部分具有光通过偏光的光栅耦合器。锥形边缘可以以非常低的损耗和背反射在两个波导部分之间耦合光。低损耗和最小的背反射使得能够在晶片级上测试光子电路，并通过光栅耦合器改善性能。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式