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1. 发明申请

WO2003044840A1 REACTIVE CODOPING OF GAALINP COMPOUND SEMICONDUCTORS 审中-公开
标题翻译： GAALINP化合物半导体的反应性选择
公开(公告)号：WO2003044840A1
公开(公告)日：2003-05-30
申请号：PCT/US2001/049921
申请日：2001-11-08
申请人： MIDWEST RESEARCH INSTITUTE , HANNA, Mark, Cooper , REEDY, Robert
发明人： HANNA, Mark, Cooper , REEDY, Robert
IPC分类号： H01L21/28
CPC分类号： C30B29/40 , C30B25/02 , H01L21/02395 , H01L21/02433 , H01L21/02543 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.
摘要翻译：提供GaAlInP化合物半导体和制造GaAlInP化合物半导体的方法。该装置和方法包括在金属有机气相沉积反应器中的GaAs晶体衬底。 Al，Ga，In蒸气通过热分解有机金属化合物制备。通过热分解磷酸气体制备P蒸气，第II组蒸气通过热分解有机金属组IIA或IIB化合物制备。通过热分解组VIB的气态化合物制备组VIB蒸气。 Al，Ga，In，P，II族和VIB族蒸气在衬底上生长掺杂有IIA或IIB族和VIB族元素的GaAlInP晶体，其中IIA或IIB族和VIB族蒸气产生共掺GaAlInP化合物半导体，用作具有低II族原子扩散的p型掺杂剂的IIA或IIB族元素。

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