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1. 实用新型

TWM355094U 護腰帶之結構失效
简体标题：护腰带之结构
公开(公告)号：TWM355094U
公开(公告)日：2009-04-21
申请号：TW097220979
申请日：2008-11-21
申请人：饒益通 RAO, YI TUNG
发明人：饒益通 RAO, YI TUNG
IPC分类号： A61F
摘要：一種護腰帶之結構,其下支撐件與上支撐件之間係以支撐軸形成連接,再以轉動軸帶動支撐軸達到調整之效果,下支撐件設有組設座,該組設座貫穿有支撐孔及轉軸孔,上支撐件設有連結件,該連結件開設有連結孔,支撐軸係由支撐螺桿、螺套所構成,螺套之外圈乃環設有齒環,轉動軸之轉動桿連接有轉動柄,其組設座之支撐孔處係提供支撐軸之穿設,另連結件之連結孔套掣於支撐螺桿,而轉動桿穿設入組設座之轉軸孔中,藉由上述結構,即可調整上、下支撐件之相對位置,藉此配合使用者之需求而達到最佳之支撐效果者。
简体摘要：一种护腰带之结构,其下支撑件与上支撑件之间系以支撑轴形成连接,再以转动轴带动支撑轴达到调整之效果,下支撑件设有组设座,该组设座贯穿有支撑孔及转轴孔,上支撑件设有链接件,该链接件开设有链接孔,支撑轴系由支撑螺杆、螺套所构成,螺套之外圈乃环设有齿环,转动轴之转动杆连接有转动柄,其组设座之支撑孔处系提供支撑轴之穿设,另链接件之链接孔套掣于支撑螺杆,而转动杆穿设入组设座之转轴孔中,借由上述结构,即可调整上、下支撑件之相对位置,借此配合用户之需求而达到最佳之支撑效果者。

2. 实用新型

TWM361332U 護腰帶之結構(一) 失效
简体标题：护腰带之结构(一)
公开(公告)号：TWM361332U
公开(公告)日：2009-07-21
申请号：TW098204525
申请日：2009-03-20
申请人：饒益通 RAO, YI TUNG
发明人：饒益通 RAO, YI TUNG
IPC分类号： A61F
摘要：一種護腰帶之結構(一),其包括有:一上護帶、一下護帶及二支撐桿,該上護套之兩端皆固定有連接件,且下護套之兩端皆固定有支撐件,支撐桿其一端固定於連接件,另一端向下貫穿支撐件,支撐件開設有容置空間,並於容置空間處設置有連動件,該連動件之螺紋段抵觸於支撐桿,且連動件之下端環設有齒環,另容置空間內又設置有螺套,該螺套係以螺紋橫向契合於齒環處,再以前蓋蓋合於支撐件,又該螺套之軸向貫穿固定有一轉柄,該轉柄提供調整之控制,藉由上述結構,即可調整上、下護套之相對位置,藉此配合使用者之需求而達到最佳之支撐效果者。
简体摘要：一种护腰带之结构(一),其包括有:一上护带、一下护带及二支撑杆,该上护套之两端皆固定有连接件,且下护套之两端皆固定有支撑件,支撑杆其一端固定于连接件,另一端向下贯穿支撑件,支撑件开设有容置空间,并于容置空间处设置有连动件,该连动件之螺纹段抵触于支撑杆,且连动件之下端环设有齿环,另容置空间内又设置有螺套,该螺套系以螺纹横向契合于齿环处,再以前盖盖合于支撑件,又该螺套之轴向贯穿固定有一转柄,该转柄提供调整之控制,借由上述结构,即可调整上、下护套之相对位置,借此配合用户之需求而达到最佳之支撑效果者。

3. 发明公开

EP2204147A1 Waist protective device 审中-公开
标题翻译： Taillenschutzvorrichtung
公开(公告)号：EP2204147A1
公开(公告)日：2010-07-07
申请号：EP09000069.6
申请日：2009-01-06
申请人： Rao, Yi-Tung
发明人： Rao, Yi-Tung
IPC分类号： A61F5/02
CPC分类号： A61F5/024
摘要： A waist protective device includes a first support member (10), a second support member (20) spaced from the first support member, two fixing seats (21) each mounted on the second support member, two threaded rods (31) each secured on a respective one of the two fixing seats, two mounting seats (11) each mounted on the first support member, and two rotation members (32) each rotatably mounted on a respective one of the two mounting seats and each having an inner portion provided with an inner threading (321) screwed onto a respective one of the two threaded rods. Thus, the second support member is movable upward relative to the first support member to change the relative position between the second support member and the first support member.
摘要翻译：腰部保护装置包括第一支撑构件（10），与第一支撑构件间隔开的第二支撑构件（20），每个安装在第二支撑构件上的两个固定座（21），两个固定座两个固定座中的相应一个，每个安装在第一支撑构件上的两个安装座（11）和两个可旋转地安装在两个安装座中的相应一个上的旋转构件（32），每个具有设置有内螺纹（321）拧在两个螺杆中的相应一个上。因此，第二支撑构件可相对于第一支撑构件向上移动以改变第二支撑构件和第一支撑构件之间的相对位置。

4. 发明申请

WO2012149497A3 VERTICAL CAVITY SURFACE EMITTING LASERS WITH SILICON-ON-INSULATOR HIGH CONTRAST GRATING 审中-公开
标题翻译：具有绝缘体绝缘体高对比度光栅的垂直孔表面发射激光
公开(公告)号：WO2012149497A3
公开(公告)日：2013-03-21
申请号：PCT/US2012035697
申请日：2012-04-28
申请人： UNIV CALIFORNIA , CHANG-HASNAIN CONNIE , CHASE CHRISTOPHER , RAO YI
发明人： CHANG-HASNAIN CONNIE , CHASE CHRISTOPHER , RAO YI
IPC分类号： H01S5/183
CPC分类号： H01S5/18386 , H01S5/021 , H01S5/0215 , H01S5/026 , H01S5/1032 , H01S5/18308 , H01S5/18319 , H01S5/18341 , H01S5/18355 , H01S5/18363 , H01S5/1838 , H01S5/187 , H01S5/2063 , H01S5/4025 , H01S5/4087 , H01S5/423
摘要： A surface emitting laser apparatus is formed using a patterned silicon-on- insulator (SOI)-like substrate which is patterned with a buried sub-wavelength high contrast grating and adapted for bonding of a half-VCSEL device containing at least an active region and an upper mirror, to create a VCSEL. The wavelength of the VCSEL, or any individual VCSEL within an array of VCSEL devices, can be set in response to changing HCG characteristics of the lower mirror in the SOI-like substrate, or in the region above the lower mirror within the half-VCSEL. The inventive VCSEL device and fabrication method are beneficial for a number of application and devices.
摘要翻译：表面发射激光装置使用图案化的绝缘体上绝缘体（SOI）样衬底形成，其被图案化为掩埋的亚波长高对比度光栅，并适用于将至少包含一个有源区域的半VCSEL器件和一个上镜子，创建一个VCSEL。 VCSEL器件的阵列内的VCSEL或任何单个VCSEL的波长可以被设置为响应SOI类衬底中的下反射镜的改变的HCG特性，或者在半VCSEL内的下反射镜上方的区域中。本发明的VCSEL器件和制造方法对于许多应用和器件是有益的。

5. 发明申请

WO2012149497A2 VERTICAL CAVITY SURFACE EMITTING LASERS WITH SILICON-ON-INSULATOR HIGH CONTRAST GRATING 审中-公开
标题翻译：具有绝缘体绝缘体高对比度光栅的垂直孔表面发射激光
公开(公告)号：WO2012149497A2
公开(公告)日：2012-11-01
申请号：PCT/US2012/035697
申请日：2012-04-28
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , CHANG-HASNAIN, Connie , CHASE, Christopher , RAO, Yi
发明人： CHANG-HASNAIN, Connie , CHASE, Christopher , RAO, Yi
IPC分类号： H01S5/183
CPC分类号： H01S5/18386 , H01S5/021 , H01S5/0215 , H01S5/026 , H01S5/1032 , H01S5/18308 , H01S5/18319 , H01S5/18341 , H01S5/18355 , H01S5/18363 , H01S5/1838 , H01S5/187 , H01S5/2063 , H01S5/4025 , H01S5/4087 , H01S5/423
摘要： A surface emitting laser apparatus is formed using a patterned silicon-on- insulator (SOI)-like substrate which is patterned with a buried sub-wavelength high contrast grating and adapted for bonding of a half-VCSEL device containing at least an active region and an upper mirror, to create a VCSEL. The wavelength of the VCSEL, or any individual VCSEL within an array of VCSEL devices, can be set in response to changing HCG characteristics of the lower mirror in the SOI-like substrate, or in the region above the lower mirror within the half-VCSEL. The inventive VCSEL device and fabrication method are beneficial for a number of application and devices.
摘要翻译：表面发射激光装置使用图案化的绝缘体上绝缘体（SOI）样衬底形成，其被图案化为掩埋的亚波长高对比度光栅，并适用于将至少包含一个有源区域的半VCSEL器件和一个上镜子，创建一个VCSEL。 VCSEL器件的阵列内的VCSEL或任何单个VCSEL的波长可以被设置为响应SOI类衬底中的下反射镜的改变的HCG特性，或者在半VCSEL内的下反射镜上方的区域中。本发明的VCSEL器件和制造方法对于许多应用和器件是有益的。

6. 发明申请

WO2011142760A1 HIGH CONTRAST GRATING INTEGRATED VCSEL USING ION IMPLANTATION 审中-公开
标题翻译：使用离子植入的高对比度光栅集成VCSEL
公开(公告)号：WO2011142760A1
公开(公告)日：2011-11-17
申请号：PCT/US2010/034731
申请日：2010-05-13
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , CHANG-HASNAIN, Connie , CHASE, Christopher , RAO, Yi
发明人： CHANG-HASNAIN, Connie , CHASE, Christopher , RAO, Yi
IPC分类号： H01S3/0947 , H01S3/00
CPC分类号： H01S5/18386 , B82Y20/00 , H01S5/18308 , H01S5/18355 , H01S5/18366 , H01S5/18388 , H01S5/2063 , H01S5/3095 , H01S5/34306
摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) and its fabrication are taught which incorporate a high contrast grating (HCG) to replace the top mirror of the device and which can operate at long-wavelengths, such as beyond 0.85 μm. The HCG beneficially provides a high degree of polarization differentiation and provides optical containment in response to lensing by the HCG. The device incorporates a quantum well active layer, a tunnel junction, and control of aperture width using ion implantation. A tunable VCSEL is taught which controls output wavelength in response to controlling a micro-mechanical actuator coupled to a HCG top mirror which can be moved to, or from, the body of the VCSEL. A fabrication process for the VCSEL includes patterning the HCG using a wet etching process, and highly anisotropic wet etching while precisely controlling temperature and PH.
摘要翻译：教导了垂直空腔表面发射激光器（VCSEL）及其制造方法，其结合了高对比度光栅（HCG）来代替器件的上反射镜，并可以在长波长（例如超过0.85μm）下工作。 HCG有利地提供高度的偏振微分，并且响应于HCG的透镜提供光学容纳。该器件采用量子阱有源层，隧道结，以及使用离子注入控制孔径宽度。教导了可调谐VCSEL，其响应于控制耦合到HCG上反射镜的微机械致动器来控制输出波长，HCG上反射镜可移动到VCSEL的主体或从VCSEL的主体移动。用于VCSEL的制造工艺包括使用湿蚀刻工艺对HCG进行图案化，并且在精确地控制温度和PH的同时进行高度各向异性的湿蚀刻。

7. 发明申请

US20090209028A1 Sensing Chip 有权
标题翻译：感应芯片
公开(公告)号：US20090209028A1
公开(公告)日：2009-08-20
申请号：US12346950
申请日：2008-12-31
申请人： Huang Yi Dong , Rao Yi , Liu Fang , Zhang Wei , Peng Jiang De , Dai Ohnishi , Daisuke Niwa , Atsushi Tazuke , Yoshikatsu Miura
发明人： Huang Yi Dong , Rao Yi , Liu Fang , Zhang Wei , Peng Jiang De , Dai Ohnishi , Daisuke Niwa , Atsushi Tazuke , Yoshikatsu Miura
IPC分类号： C12M1/34 , G01N21/41
CPC分类号： G01N21/553 , G01N21/41 , G01N21/7703
摘要： There is provided a sensing chip capable of measuring a refractive index by utilizing a long-range surface plasmon polariton, accurately measuring an accumulative refractive index in a wide range, and more easily enabling sealing for measurement. The present invention relates to the sensing chip which has a thin metal film or a strip-like metal grown on an underlayer, and has a dielectric that limits a refractive index and a dielectric buffer layer on an upper surface and a lower surface of the thin metal film or the strip-like metal. The dielectric buffer layer is attached onto the thin metal film or the strip-like metal. The thin metal film or the strip-like metal and the buffer layer are sandwiched between two dielectric layers. A hole is made in a surface of the upper dielectric layer to serve as a measurement groove.
摘要翻译：提供了一种能够通过利用远程表面等离子体激元测量折射率的感测芯片，精确地测量宽范围内的累积折射率，并且更容易实现测量密封。本发明涉及一种感测芯片，其具有在底层上生长的薄金属膜或带状金属，并且具有限制薄膜的上表面和下表面上的折射率和介电缓冲层的电介质金属膜或带状金属。介电缓冲层附着在薄金属膜或带状金属上。金属薄膜或带状金属和缓冲层夹在两个电介质层之间。在上部电介质层的表面形成孔作为测量槽。

8. 发明授权

US08048385B2 Sensing chip 有权
标题翻译：感应芯片
公开(公告)号：US08048385B2
公开(公告)日：2011-11-01
申请号：US12346950
申请日：2008-12-31
申请人： Huang Yi Dong , Rao Yi , Liu Fang , Zhang Wei , Peng Jiang De , Dai Ohnishi , Daisuke Niwa , Atsushi Tazuke , Yoshikatsu Miura
发明人： Huang Yi Dong , Rao Yi , Liu Fang , Zhang Wei , Peng Jiang De , Dai Ohnishi , Daisuke Niwa , Atsushi Tazuke , Yoshikatsu Miura
IPC分类号： G01N21/75
CPC分类号： G01N21/553 , G01N21/41 , G01N21/7703
摘要： There is provided a sensing chip capable of measuring a refractive index by utilizing a long-range surface plasmon polariton, accurately measuring an accumulative refractive index in a wide range, and more easily enabling sealing for measurement. The present invention relates to the sensing chip which has a thin metal film or a strip-like metal grown on an underlayer, and has a dielectric that limits a refractive index and a dielectric buffer layer on an upper surface and a lower surface of the thin metal film or the strip-like metal. The dielectric buffer layer is attached onto the thin metal film or the strip-like metal. The thin metal film or the strip-like metal and the buffer layer are sandwiched between two dielectric layers. A hole is made in a surface of the upper dielectric layer to serve as a measurement groove.
摘要翻译：提供了一种能够通过利用远程表面等离子体激元测量折射率的感测芯片，精确地测量宽范围内的累积折射率，并且更容易实现测量密封。本发明涉及一种感测芯片，其具有在底层上生长的薄金属膜或带状金属，并且具有限制薄膜的上表面和下表面上的折射率和介电缓冲层的电介质金属膜或带状金属。介电缓冲层附着在薄金属膜或带状金属上。金属薄膜或带状金属和缓冲层夹在两个电介质层之间。在上部电介质层的表面形成孔作为测量槽。

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