专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP2856512A1 STRUCTURES AND METHODS OF FORMATION OF CONTIGUOUS AND NON-CONTIGUOUS BASE REGIONS FOR HIGH EFFICIENCY BACK-CONTACT SOLAR CELLS 无效
标题翻译：高效背接式太阳能电池的连续和不连续基区结构及形成方法
公开(公告)号：EP2856512A1
公开(公告)日：2015-04-08
申请号：EP13798110.6
申请日：2013-05-29
申请人： Solexel, Inc. , Deshpande, Anand , Kapur, Pawan , Rana, Virendra, V. , Moslehi, Mehrdad, M. , Seutter, Sean, M. , Deshazer, Heather Dawn , Kommera, Swaroop , Anbalagan, Pranav , Rattle, Benjamine, E. , Coutant, Solene
发明人： DESHPANDE, Anand , KAPUR, Pawan , RANA, Virendra, V. , MOSLEHI, Mehrdad, M. , SEUTTER, Sean, M. , DESHAZER, Heather , KOMMERA, Swaroop , ANBALAGAN, Pranav , RATTLE, Benjamine, E. , COUTANT, Solene
IPC分类号： H01L31/04 , H01L31/18
CPC分类号： H01L31/022441 , H01L31/02167 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non-nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.
摘要翻译：描述了与太阳能电池的多层金属化相关的制造方法和结构。在一个实施例中，背接触太阳能电池包括具有衬底的衬底，所述衬底具有光接收前表面和用于形成图案化发射极和非嵌套基极区的背侧表面。叉指掺杂的发射极和基极区形成在晶体半导体衬底的背侧表面上。包括至少掺杂层和未掺杂盖层的组合的图案化电绝缘层堆叠形成在图案化的掺杂发射极区和基极区上。形成包括接触发射极区的发射极金属化电极和接触基极区的非嵌套基极金属化电极的接触金属化图案，其中未嵌套的基础金属化电极被允许超出基极区以重叠所述图案的至少一部分而不会在太阳能电池中引起电气分流。

2. 发明公开

EP2856512A4 STRUCTURES AND METHODS OF FORMATION OF CONTIGUOUS AND NON-CONTIGUOUS BASE REGIONS FOR HIGH EFFICIENCY BACK-CONTACT SOLAR CELLS 无效
标题翻译：结构和方法的形成邻国的，而不是根据邻近地区对于高高效背接触太阳能电池
公开(公告)号：EP2856512A4
公开(公告)日：2015-12-16
申请号：EP13798110
申请日：2013-05-29
申请人： SOLEXEL INC , DESHPANDE ANAND , KAPUR PAWAN , RANA VIRENDRA V , MOSLEHI MEHRDAD M , SEUTTER SEAN M , DESHAZER HEATHER DAWN , KOMMERA SWAROOP , ANBALAGAN PRANAV , RATTLE BENJAMINE E , COUTANT SOLENE
发明人： DESHPANDE ANAND , KAPUR PAWAN , RANA VIRENDRA V , MOSLEHI MEHRDAD M , SEUTTER SEAN M , DESHAZER HEATHER , KOMMERA SWAROOP , ANBALAGAN PRANAV , RATTLE BENJAMINE E , COUTANT SOLENE
IPC分类号： H01L31/18 , H01L31/0216 , H01L31/0224 , H01L31/068
CPC分类号： H01L31/022441 , H01L31/02167 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521

3. 发明申请

WO2012092537A2 LASER PROCESSING METHODS FOR PHOTOVOLTAIC SOLAR CELLS 审中-公开
标题翻译：光伏太阳能电池的激光加工方法
公开(公告)号：WO2012092537A2
公开(公告)日：2012-07-05
申请号：PCT/US2011/068037
申请日：2011-12-30
申请人： SOLEXEL, INC. , MOSLEHI, Mehrdad M. , RANA, Virendra V. , ANBALAGAN, Pranav , SARASWAT, Vivek
发明人： MOSLEHI, Mehrdad M. , RANA, Virendra V. , ANBALAGAN, Pranav , SARASWAT, Vivek
IPC分类号： H01L31/042 , H01L31/18 , B23K26/36
CPC分类号： H01L31/02363 , B23K26/0624 , B23K26/40 , B23K2203/50 , H01L21/268 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Various laser processing schemes are disclosed for producing various types of hetero- junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero- junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
摘要翻译：公开了用于生产各种类型的异质结和同质结太阳能电池的各种激光加工方案。这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝来选择性发射极掺杂。而且，公开了适用于异质结太阳能电池的选择性非晶硅烧蚀和选择性掺杂的激光加工方案。公开了激光烧蚀技术，其使下面的硅基本上完好无损。这些激光加工技术可应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯切片方法或经由外延沉积工艺或其他切割技术（例如离子注入和加热）制造的晶体硅衬底，其是无论是平面的还是纹理的/三维的。这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

4. 发明申请

WO2011072153A3 HIGH-EFFICIENCY PHOTOVOLTAIC BACK-CONTACT SOLAR CELL STRUCTURES AND MANUFACTURING METHODS USING THREE-DIMENSIONAL SEMICONDUCTOR ABSORBERS 审中-公开
标题翻译：高效光伏反接触太阳能电池结构和使用三维半导体吸收器的制造方法
公开(公告)号：WO2011072153A3
公开(公告)日：2011-11-17
申请号：PCT/US2010059748
申请日：2010-12-09
申请人： SOLEXEL INC , MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER KARL-JOSEF , WANG DAVID XUAN-QI , SEUTTER SEAN , RANA VIRENDRA V
发明人： MOSLEHI MEHRDAD M , KAPUR PAWAN , KRAMER KARL-JOSEF , WANG DAVID XUAN-QI , SEUTTER SEAN , RANA VIRENDRA V
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/0236 , H01L31/0201 , H01L31/02167 , H01L31/022441 , H01L31/022458 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03921 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/1892 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Back contact back junction three dimensional solar cell and methods for manufacturing are provided. The back contact back contact back junction three dimensional solar cell comprises a three-dimensional substrate. The substrate comprises a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer is positioned on the doped backside emitter region. Backside emitter contacts and backside base contacts connected to metal interconnects and selectively formed on three-dimensional features of the backside of three-dimensional solar cell.
摘要翻译：提供背面接头三维太阳能电池及制造方法。背面接触背面接合三维太阳能电池包括三维基板。衬底包括具有钝化层的光捕获前侧表面，掺杂的基极区域和与掺杂的基极区域极性相反的掺杂的背侧发射极区域。背面钝化层位于掺杂背侧发射极区域上。连接到金属互连的背面发射极触点和背面底部触点，并且选择性地形成在三维太阳能电池的背面的三维特征上。

5. 发明申请

WO2009055232A1 MOLTEN METAL SPRAYING FOR METALLIZATION APPLICATION IN SOLAR CELLS 审中-公开
标题翻译：用于在太阳能电池中金属化应用的金属喷涂
公开(公告)号：WO2009055232A1
公开(公告)日：2009-04-30
申请号：PCT/US2008/078978
申请日：2008-10-06
申请人： APPLIED MATERIALS, INC. , RANA, Virendra, V. , BACHRACH, Robert, Z.
发明人： RANA, Virendra, V. , BACHRACH, Robert, Z.
IPC分类号： H01L31/00
CPC分类号： H01L31/022425 , H01L31/056 , H01L31/068 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： The present invention provides a method of making back side contacts and back surafce fields in photovoltaic devices such as silicon solar cells. According to one aspect, the process of the present invention is a non-contact process, overcoming many of the problems of the prior art. According to certain aspects, molten aluminum is used to form the contact regions as opposed to the screen printing process of the prior art. According to additional aspects, the process can be used to form the distributed point contacts and localized back surface fields for dielectric passivated back surface. According to still further aspects, molten aluminum spray and/or atomization is used for the back side metallization.
摘要翻译：本发明提供一种在诸如硅太阳能电池的光电器件中制造背面接触和背面凸起场的方法。根据一个方面，本发明的方法是克服现有技术的许多问题的非接触方法。根据某些方面，与现有技术的丝网印刷方法相反，使用熔融铝来形成接触区域。根据另外的方面，该方法可以用于形成电介质钝化后表面的分布点接触和局部后表面场。根据另外的方面，熔融铝喷雾和/或雾化用于背面金属化。

6. 发明申请

WO2015073591A1 METAL FOIL METALLIZATION FOR BACKPLANE-ATTACHED SOLAR CELLS AND MODULES 审中-公开
标题翻译：用于背板连接的太阳能电池和模块的金属箔金属化
公开(公告)号：WO2015073591A1
公开(公告)日：2015-05-21
申请号：PCT/US2014/065312
申请日：2014-11-12
申请人： SOLEXEL, INC. , MOSLEHI, Mehrdad , STALCUP, Thom , KRAMER, Karl-Josef , KAPUR, Pawan , CALCATERRA, Anthony , RANA, Virendra, V. , SEUTTER, Sean, M. , WINGERT, Michael
发明人： MOSLEHI, Mehrdad , STALCUP, Thom , KRAMER, Karl-Josef , KAPUR, Pawan , CALCATERRA, Anthony , RANA, Virendra, V. , SEUTTER, Sean, M. , WINGERT, Michael
IPC分类号： H01L31/00
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/0682 , Y02E10/547 , Y02P70/521
摘要： A back contact solar cell is described which includes a semiconductor light absorbing layer; a first-level metal layer (Ml), the Ml metal layer on a back side of the light absorbing layer, the back side being opposite from a front side of the light absorbing layer designed to receive incident light; an electrically insulating backplane sheet backside of said solar cell with the Ml layer, the backplane sheet comprising a plurality of via holes that expose portions of the Ml layer beneath the backplane sheet; and an M2 layer in contact with the backplane sheet, the M2 layer made of a sheet of pre-fabricated metal foil material comprising a thickness of between 5-250 μm, the M2 layer electrically connected to the Ml layer through the via holes in the backplane sheet.
摘要翻译：描述了一种背接触太阳能电池，其包括半导体光吸收层; 第一级金属层（M1），位于光吸收层背面的Ml金属层，背面与被设计成接收入射光的光吸收层的前侧相反; 具有M1层的所述太阳能电池背面的电绝缘背板片，所述背板片包括多个通孔，所述多个通孔暴露在所述背板片下面的M1层的部分; 以及与背板接触的M2层，M2层由预先制备的金属箔材料制成，包括5〜50μm的厚度，M2层通过导电孔中的通孔与M1层电连接底板。

7. 发明申请

WO2015039143A1 LASER PROCESSING FOR SOLAR CELL BASE AND EMITTER REGIONS 审中-公开
标题翻译：太阳能电池基座和发射极区域的激光加工
公开(公告)号：WO2015039143A1
公开(公告)日：2015-03-19
申请号：PCT/US2014/055964
申请日：2014-09-16
申请人： SOLEXEL, INC. , DESHAZER, Heather , RANA, Virendra, V. , SEUTTER, Sean, M. , KAPUR, Pawan , MOSLEHI, Mehrdad, M. , COUTANT, Solene
发明人： DESHAZER, Heather , RANA, Virendra, V. , SEUTTER, Sean, M. , KAPUR, Pawan , MOSLEHI, Mehrdad, M. , COUTANT, Solene
IPC分类号： H01L31/18 , H01L21/268
CPC分类号： H01L31/1864 , H01L31/02167 , H01L31/022441 , H01L31/0682 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： The present application provides effective and efficient structures and methods for the formation of solar cell base and emitter regions using laser processing. Laser absorbent passivation materials are formed on a solar cell substrate and patterned using laser ablation to form base and emitter regions.
摘要翻译：本申请提供了使用激光加工形成太阳能电池基座和发射极区域的有效和有效的结构和方法。激光吸收剂钝化材料形成在太阳能电池基板上，并使用激光烧蚀进行图案化以形成基极和发射极区域。

8. 发明申请

WO2013181298A1 STRUCTURES AND METHODS OF FORMATION OF CONTIGUOUS AND NON-CONTIGUOUS BASE REGIONS FOR HIGH EFFICIENCY BACK-CONTACT SOLAR CELLS 审中-公开
标题翻译：形成高效率反接触太阳能电池的连续和非连续基区的结构和方法
公开(公告)号：WO2013181298A1
公开(公告)日：2013-12-05
申请号：PCT/US2013/043193
申请日：2013-05-29
申请人： SOLEXEL, INC. , DESHPANDE, Anand , KAPUR, Pawan , RANA, Virendra, V. , MOSLEHI, Mehrdad, M. , SEUTTER, Sean, M. , DESHAZER, Heather , KOMMERA, Swaroop , ANBALAGAN, Pranav , RATTLE, Benjamine, E. , COUTANT, Solene
发明人： DESHPANDE, Anand , KAPUR, Pawan , RANA, Virendra, V. , MOSLEHI, Mehrdad, M. , SEUTTER, Sean, M. , DESHAZER, Heather , KOMMERA, Swaroop , ANBALAGAN, Pranav , RATTLE, Benjamine, E. , COUTANT, Solene
IPC分类号： H01L31/04 , H01L31/18
CPC分类号： H01L31/022441 , H01L31/02167 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non-nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.
摘要翻译：描述与太阳能电池的多层金属化相关的制造方法和结构。在一个实施例中，背接触太阳能电池包括具有具有光接收前侧表面的基板和用于形成图案化发射极和非嵌套基极区域的背面的基板。交叉掺杂的发射极和基极区形成在晶体半导体衬底的背面上。包括至少掺杂层和未掺杂覆盖层的组合的图案化电绝缘层堆叠形成在图案化的掺杂发射极和基极区上。形成接触金属化图案，其包括接触发射极区域的发射极金属化电极和接触基极区域的非嵌套基底金属化电极，其中非嵌套基底金属化电极被允许超过基极区域以与所述图案化的至少一部分重叠绝缘体，而不会在太阳能电池中造成电分路。

9. 发明申请

WO2013022479A2 HIGH-EFFICIENCY SOLAR PHOTOVOLTAIC CELLS AND MODULES USING THIN CRYSTALLINE SEMICONDUCTOR ABSORBERS 审中-公开
标题翻译：高效太阳能光伏电池和使用薄晶体半导体吸收器的模块
公开(公告)号：WO2013022479A2
公开(公告)日：2013-02-14
申请号：PCT/US2012/000348
申请日：2012-08-09
申请人： SOLEXEL, INC. , MOSLEHI, Mehrdad, M. , KAPUR, Pawan , KRAMER, K.-Josef , RANA, Virendra, V. , SEUTTER, Sean , DESHPANDE, Anand , CALCATERRA, Anthony , OLSEN, Gerry , MANTEGHI, Kamran , STALCUP, Thom , KAMIAN, George, D. , WANG, David, Xuan-Qi , SU, Yen-Sheng , WINGERT, Michael
发明人： MOSLEHI, Mehrdad, M. , KAPUR, Pawan , KRAMER, K.-Josef , RANA, Virendra, V. , SEUTTER, Sean , DESHPANDE, Anand , CALCATERRA, Anthony , OLSEN, Gerry , MANTEGHI, Kamran , STALCUP, Thom , KAMIAN, George, D. , WANG, David, Xuan-Qi , SU, Yen-Sheng , WINGERT, Michael
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/022441 , H01L31/0201 , H01L31/02167 , H01L31/02327 , H01L31/03765 , H01L31/0392 , H01L31/049 , H01L31/0516 , H01L31/0682 , H01L31/075 , H01L31/1812 , H01L31/1896 , Y02E10/547
摘要： Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.
摘要翻译：描述了提供太阳能电池基板加强和电互连的背接触太阳能电池的背板的制造方法和结构以及用于形成薄膜背接触太阳能电池的制造方法和结构。

10. 发明申请

WO2012162704A2 METHOD AND APPARATUS FOR RECONDITIONING A CARRIER WAFER FOR REUSE 审中-公开
标题翻译：用于重新构建载体的方法和装置
公开(公告)号：WO2012162704A2
公开(公告)日：2012-11-29
申请号：PCT/US2012/039891
申请日：2012-05-29
申请人： SOLEXEL, INC. , KRAMER, Karl-Josef , MOSLEHI, Mehrdad, M. , ASHJAEE, Jay , RANA, Virendra, V. , YOKOI, Seiichi , RICOLCOL, Rafael
发明人： KRAMER, Karl-Josef , MOSLEHI, Mehrdad, M. , ASHJAEE, Jay , RANA, Virendra, V. , YOKOI, Seiichi , RICOLCOL, Rafael
IPC分类号： H01L31/042 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： The disclosed subject matter pertains to deposition of thin film or thin foil materials in general, but more specifically to deposition of epitaxial monocrystalline or quasi-monocrystalline silicon film (epi film) for use in manufacturing of high efficiency solar cells. In operation, methods are disclosed which extend the reusable life and to reduce the amortized cost of a reusable substrate or template used in the manufacturing process of silicon and other semiconductor solar cells.
摘要翻译：所公开的主题一般涉及薄膜或薄箔材料的沉积，更具体地涉及用于制造高效率太阳能电池的外延单晶或准单晶硅膜（epi膜）的沉积。在操作中，公开了延长可再利用寿命并降低在硅和其它半导体太阳能电池的制造过程中使用的可重复使用的基板或模板的摊销成本的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式