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    • 2. 发明授权
    • Reclamation process for tungsten carbide and tungsten-based materials
    • 碳化钨和钨基材料的回收工艺
    • US5613998A
    • 1997-03-25
    • US447383
    • 1995-05-23
    • Purnesh SeegopaulLi Wu
    • Purnesh SeegopaulLi Wu
    • B09B3/00C01B32/949C01G41/00C22B7/00C22B34/36
    • C22B34/36C01B31/34C01G41/00Y02P10/234
    • Tungsten carbide and/or tungsten can be recycled by oxidizing the tungsten composition at a temperature greater than 700.degree. C. to form a water insoluble tungsten trioxide. This is then reduced to form tungsten dioxide. The tungsten dioxide is subjected to a low temperature oxidation which forms monoclinic tungsten trioxide. The monoclinic tungsten trioxide is then dissolved in ammonia to form ammonium tungstate. If present, the binder metal such as cobalt is converted into the soluble ammine complex. This can be spray dried and carburized to form tungsten carbide. If the form composition includes cobalt or other binder metal, the ratio of cobalt to tungsten can be adjusted by adding cobalt salts or ammonium metatungstate to the aqueous solution prior to spray drying to form a precursor composition. This is uniquely suitable for forming a cobalt tungsten carbide composition.
    • 通过在大于700℃的温度下氧化钨组合物可以再循环碳化钨和/或钨,以形成不溶于水的三氧化钨。 然后将其还原形成二氧化钨。 对二氧化钨进行低温氧化,形成单斜三氧化钨。 然后将单斜晶三氧化钨溶解在氨中以形成钨酸铵。 如果存在,则将诸如钴的粘合剂金属转化为可溶的氨络合物。 这可以喷雾干燥和渗碳以形成碳化钨。 如果形式组合物包括钴或其它粘合剂金属,则可以在喷雾干燥之前通过向水溶液中加入钴盐或偏钨酸铵来调节钴与钨的比例,以形成前体组合物。 这独特地适用于形成钴碳化钨组合物。
    • 5. 发明授权
    • Method of soldering a sputtering target to a backing member
    • 将溅射靶焊接到背衬构件的方法
    • US5230462A
    • 1993-07-27
    • US910644
    • 1992-07-08
    • Milan VascakAnthony SicaPurnesh Seegopaul
    • Milan VascakAnthony SicaPurnesh Seegopaul
    • B23K1/00B23K1/08C23C14/34
    • C23C14/3407B23K1/0016B23K1/08
    • A method of bonding a sputtering target to a backing member or plate for subsequent use in a sputtering operation. A target and a backing plate are first provided and one face of each of the target and backing plate are wetted with solder. The target and backing plate are then submerged in a solder bath, and the wetted faces of the target and backing plate are pressed into contact. The target and backing plate are then removed from the solder bath and while maintaining them pressed together, the solder interface therebetween is cooled directionally by causing cooling to occur from the center of the solder interface radially outwardly toward the periphery. The lowermost of the target and backing plate is provided with a circumferential lip adjacent the periphery of the solder interface. When the target and backing plate are removed from the solder bath the lip acts as a solder collector and provides a solder reservoir for supplying the periphery of the solder interface with solder as the solder interface is cooled.
    • 一种将溅射靶结合到背衬构件或板上以便随后在溅射操作中使用的方法。 首先提供靶材和背板,并且用焊料润湿每个靶材和背板的一个面。 然后将目标板和背板浸没在焊料槽中,并且将目标板和背板的润湿面压制成接触。 然后将目标板和背板从焊料槽中取出,同时保持它们被压在一起,它们之间的焊料界面通过从焊料界面的中心径向向外周向发生冷却而定向冷却。 目标和背板的最下面设置有邻近焊接界面周边的圆周唇缘。 当目标板和背板从焊料槽中取出时,该唇部充当焊料收集器,并且当焊接界面被冷却时,提供焊料储存器用于向焊料界面供应焊料。
    • 8. 发明授权
    • Multi-step process to incorporate grain growth inhibitors in WC-Co
composite
    • 在WC-Co复合材料中纳入晶粒生长抑制剂的多步法
    • US5885372A
    • 1999-03-23
    • US733233
    • 1996-10-02
    • Purnesh Seegopaul
    • Purnesh Seegopaul
    • B23B27/14B22F1/02B22F9/08B22F9/22C01B32/949C22C1/05C22C29/08C23C8/20
    • C22C1/056C22C29/08B22F2003/1032Y10S977/891
    • Grain growth inhibitors including vanadium carbide, chromium carbide, tantalum carbide, and niobium carbide are incorporated into a cobalt/tungsten carbide matrix during the formation of the cobalt/tungsten carbide matrix. A precursor powder is formed by combining in solution a cobalt composition, a tungsten composition and a grain growth inhibiting metal composition, which is then spray dried. The precursor compound is then carburized in carbon monoxide and carbon dioxide to form cobalt/tungsten carbide matrix. This is then further carburized in a hydrocarbon hydrogen gas at an elevated temperature to cause the grain growth inhibiting metal present to form the carbide. The second carburizing step is conducted with a carburizing gas having a carbon activity greater than about 2 for a relatively short period of time at 900.degree. C. to 1000.degree. C.
    • 在钴/碳化钨基体的形成期间,将包含碳化钒,碳化铬,碳化钽和碳化铌的晶粒生长抑制剂掺入钴/碳化钨基质中。 通过在溶液中混合钴组合物,钨组合物和抑制晶粒生长的金属组合物形成前体粉末,然后将其喷雾干燥。 然后将前体化合物在一氧化碳和二氧化碳中渗碳以形成钴/碳化钨基体。 然后在烃氢气中在升高的温度下进一步渗碳,以使存在的晶粒生长抑制金属形成碳化物。 第二渗碳步骤在900℃至1000℃下在较短时间内具有大于约2的碳活性的渗碳气体进行。
    • 9. 发明授权
    • Synthesis of phase stabilized vanadium and chromium carbides
    • 相稳定化钒和碳化铬的合成
    • US5869019A
    • 1999-02-09
    • US720635
    • 1996-10-02
    • Purnesh Seegopaul
    • Purnesh Seegopaul
    • C01B31/30C01B31/34
    • C01B31/303C01P2004/62C01P2006/80
    • In order to eliminate the oxygen sensitivity of chromium carbide and vanadium carbide particles, vanadium carbide and chromium carbide particles are formed by carburizing a precursor compound at a elevated reaction temperature of about 950.degree. C. Initially, the precursor compound is heated in an inert nitrogen-containing gas to the reaction temperature. Once the reaction temperature is achieved, hydrogen and a carbon-containing gas such as methane or ethylene are used to conduct the carbonization. After the carbonization has been completed, the carbonizing gas is then replaced with an inert nitrogen-containing gas and the product allowed to cool down. The carbonization cycle is adjusted so that the oxygen level is kept to less than 0.35%, while the nitrogen level is kept at about 2%. Powders produced from this process show minimal or no oxygen pickup when exposed to ambient air.
    • 为了消除碳化铬和碳化钒颗粒的氧气敏感性,通过在约950℃的升高的反应温度下对前体化合物进行渗碳来形成碳化钒和碳化铬颗粒。首先,将该前体化合物在惰性氮气 的气体到反应温度。 一旦达到反应温度,就使用氢气和含碳气体如甲烷或乙烯进行碳化。 碳化完成后,用惰性含氮气体代替碳化气体,使产物冷却。 调整碳化循环,使得氧气水平保持在小于0.35%,而氮气水平保持在约2%。 从这个过程产生的粉末暴露于环境空气时显示出最小的或没有氧气吸收。