专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09526885B1 Microneedles with sharpened tips and corresponding method of fabrication 有权
标题翻译：具有尖锐尖端的微针和相应的制造方法
公开(公告)号：US09526885B1
公开(公告)日：2016-12-27
申请号：US14223515
申请日：2014-03-24
申请人： Puneet Khanna , Shekhar Bhansali
发明人： Puneet Khanna , Shekhar Bhansali
IPC分类号： H01L21/302 , A61M37/00 , B44C1/22
CPC分类号： A61M37/0015 , A61M2037/0053 , B44C1/227 , B81C1/00
摘要： Microneedles with sharpened tips are fabricated without any reduction to the shaft diameter below the tip. By sharpening the tip and not the entire length of the microneedle, their mechanical strength is maintained. The microneedles are fabricated out of a wafer substrate using lithography and deep reactive-ion etching (DRIE). By controlling the timing of the DRIE as the photoresist depletes, the sharpness and angle of the tips are controlled.
摘要翻译：制造具有尖锐尖端的微针，而不会使尖端下方的轴直径减小。通过锐化尖端而不是整个微针的长度，它们的机械强度得以保持。使用光刻和深反应离子蚀刻（DRIE）从晶片衬底制造微针。通过控制光刻胶耗尽时的DRIE时序，控制尖端的锐度和角度。

2. 发明授权

US09099525B2 Blanket EPI super steep retrograde well formation without Si recess 有权
标题翻译：毯子EPI超陡逆行井形成无Si凹陷
公开(公告)号：US09099525B2
公开(公告)日：2015-08-04
申请号：US13729207
申请日：2012-12-28
申请人： Laegu Kang , Vara Govindeswara Reddy Vakada , Michael P. Ganz , Yi Qi , Puneet Khanna , Sri Charan Vemula , Srikanth Samavedam
发明人： Laegu Kang , Vara Govindeswara Reddy Vakada , Michael P. Ganz , Yi Qi , Puneet Khanna , Sri Charan Vemula , Srikanth Samavedam
IPC分类号： H01L21/762 , H01L29/66 , H01L29/10 , H01L21/8238 , H01L29/165
CPC分类号： H01L29/0692 , H01L21/76224 , H01L21/823807 , H01L21/823878 , H01L21/823892 , H01L29/0649 , H01L29/1054 , H01L29/1095 , H01L29/165 , H01L29/167 , H01L29/66651
摘要： A method of forming SSRW FETs with controlled step height between a field oxide and epitaxially grown silicon and the resulting devices are provided. Embodiments include providing a SiN layer on a substrate, forming first, second, and third spaced STI regions of field oxide through the SiN layer and into the substrate, removing a top portion of the field oxide for each STI region by a controlled deglaze, removing the SiN layer, forming an n-type region in the substrate between the first and second STI regions and a p-type region in the substrate between the second and third STI regions, and epitaxially growing a Si based layer on the substrate over the n-type and p-type regions.
摘要翻译：提供了在场氧化物和外延生长的硅之间形成具有受控步长的SSRW FET的方法以及所得到的器件。实施例包括在衬底上提供SiN层，通过SiN层形成第一，第二和第三间隔的场区氧化物的STI区域并进入衬底，通过受控的消光去除每个STI区域的场氧化物的顶部部分，去除 SiN层，在第一和第二STI区域之间的衬底中形成n型区域和在第二和第三STI区域之间的衬底中的p型区域，并且在衬底上在n上外延生长Si基层型和p型区。

3. 发明授权

US08348971B2 Apparatus and methods for facilitating hemostasis within a vascular puncture 有权
标题翻译：用于促进血管穿刺止血的装置和方法
公开(公告)号：US08348971B2
公开(公告)日：2013-01-08
申请号：US10928744
申请日：2004-08-27
申请人： Puneet Khanna , Farhad Khosravi
发明人： Puneet Khanna , Farhad Khosravi
IPC分类号： A61B17/08
CPC分类号： A61B17/08 , A61B17/0057 , A61B17/10 , A61B2017/00004 , A61B2017/00575 , A61B2017/00601 , A61B2017/00637 , A61B2017/0065 , A61B2017/00659
摘要： Apparatus for sealing a puncture communicating with a blood vessel includes a bioabsorbable sealing member secured to one end of a filament or other retaining member. The sealing member is delivered through the puncture into the vessel, and retracted against the wall of the vessel to provide temporary hemostasis. The sealing member is rapidly absorbed after exposure within the vessel, e.g., to an aqueous or heated physiological environment (e.g., exposure to blood or body temperature), immediately or shortly after completing a medical procedure via the puncture, e.g., within the time period that the patient is ambulatory. Optionally, extravascular sealing material is delivered into the puncture proximal to the sealing member. The retaining member and/or extravascular material may be bioabsorbable, being absorbed at a slower rate than the sealing member. Alternatively, the filament is removed from the puncture after hemostasis is established.
摘要翻译：用于密封与血管连通的穿刺的装置包括固定到细丝或其它保持构件的一端的生物可吸收密封构件。密封构件通过穿刺输送到容器中，并且缩回到容器的壁上以提供临时止血。在通过穿刺完成医疗程序之后立即或不久，例如在时间段内，密封构件在容器内暴露之后被快速吸收，例如，暴露于水或加热的生理环境（例如，暴露于血液或体温）病人走路。任选地，血管外密封材料被输送到靠近密封构件的穿刺中。保持构件和/或血管外材料可以是生物可吸收的，以比密封构件更慢的速度被吸收。或者，在建立止血后，从穿刺中除去细丝。

4. 发明公开

US20230355988A1 TRANSVENOUS PACING SYSTEM 审中-公开
公开(公告)号：US20230355988A1
公开(公告)日：2023-11-09
申请号：US18041980
申请日：2021-08-16
申请人： Puneet Khanna , Expanse Technology Partners, LLC
发明人： Puneet Khanna , Eitan Konstantino , Matthew D. Ritch , Stephanie M. Boula
IPC分类号： A61N1/05 , A61N1/362
CPC分类号： A61N1/362 , A61N1/057
摘要： Temporary pacing catheters for pacing a patient’s heart and methods of use. The pacing catheter may include variable stiffness shaft. A distal portion of the pacing catheter may carry one or more electrodes for pacing the patient’s heart. The pacing catheter may include a lumen configured to receive a shaping instrument. The pacing catheter may have a first configuration when advanced to the patient’s heart without the shaping instrument and a second configuration configured to stabilize the pacing catheter within the patient’s heart when the shaping instrument is introduced through the lumen.

5. 发明申请

US20140183551A1 BLANKET EPI SUPER STEEP RETROGRADE WELL FORMATION WITHOUT Si RECESS 有权
公开(公告)号：US20140183551A1
公开(公告)日：2014-07-03
申请号：US13729207
申请日：2012-12-28
申请人： Laegu Kang , Vara Govindeswara Reddy Vakada , Michael P. Ganz , Yi Qi , Puneet Khanna , Sri Charan Vemula , Srikanth Samavedam
发明人： Laegu Kang , Vara Govindeswara Reddy Vakada , Michael P. Ganz , Yi Qi , Puneet Khanna , Sri Charan Vemula , Srikanth Samavedam
IPC分类号： H01L21/762 , H01L29/16
CPC分类号： H01L29/0692 , H01L21/76224 , H01L21/823807 , H01L21/823878 , H01L21/823892 , H01L29/0649 , H01L29/1054 , H01L29/1095 , H01L29/165 , H01L29/167 , H01L29/66651
摘要： A method of forming SSRW FETs with controlled step height between a field oxide and epitaxially grown silicon and the resulting devices are provided. Embodiments include providing a SiN layer on a substrate, forming first, second, and third spaced STI regions of field oxide through the SiN layer and into the substrate, removing a top portion of the field oxide for each STI region by a controlled deglaze, removing the SiN layer, forming an n-type region in the substrate between the first and second STI regions and a p-type region in the substrate between the second and third STI regions, and epitaxially growing a Si based layer on the substrate over the n-type and p-type regions.
摘要翻译：提供了在场氧化物和外延生长的硅之间形成具有受控步长的SSRW FET的方法以及所得到的器件。实施例包括在衬底上提供SiN层，通过SiN层形成第一，第二和第三间隔的场区氧化物的STI区域并进入衬底，通过受控的消光去除每个STI区域的场氧化物的顶部部分，去除 SiN层，在第一和第二STI区域之间的衬底中形成n型区域和在第二和第三STI区域之间的衬底中的p型区域，并且在衬底上在n上外延生长Si基层型和p型区。

6. 发明申请

US20140070358A1 METHOD OF TAILORING SILICON TRENCH PROFILE FOR SUPER STEEP RETROGRADE WELL FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：用于超级退火井场效应晶体管的硅介质轮廓的方法
公开(公告)号：US20140070358A1
公开(公告)日：2014-03-13
申请号：US13612032
申请日：2012-09-12
申请人： Yi Qi , Puneet Khanna , Srikanth Samavedam , Vara G. Vakada , Michael P. Ganz , Sri Charan Vemula , Laegu Kang , Bharat V. Krishnan
发明人： Yi Qi , Puneet Khanna , Srikanth Samavedam , Vara G. Vakada , Michael P. Ganz , Sri Charan Vemula , Laegu Kang , Bharat V. Krishnan
IPC分类号： H01L29/06 , H01L21/76
CPC分类号： H01L21/76224 , H01L21/02381 , H01L21/02529 , H01L21/02658
摘要： A methodology is disclosed enabling the formation of silicon trench profiles for devices, such as SSRW FETs, having a resultant profile that enables desirable epitaxial growth of semiconductor materials. Embodiments include forming a trench in a silicon wafer between STI regions, thermally treating the silicon surfaces of the trench, and forming Si:C in the trench. The process eliminates a need for an isotropic silicon etch to achieve a desirable flat surface. Further, the flat bottom surface provides a desirable surface for epitaxial growth of semiconductor materials, such as Si:C.
摘要翻译：公开了一种能够形成用于诸如SSRW FET的器件的硅沟槽轮廓的方法，其具有能够实现半导体材料的期望的外延生长的合成轮廓。实施例包括在STI区域之间的硅晶片中形成沟槽，热处理沟槽的硅表面，并在沟槽中形成Si：C。该方法消除了对各向同性硅蚀刻的需要以实现期望的平坦表面。此外，平坦的底表面为诸如Si：C的半导体材料的外延生长提供期望的表面。

7. 发明申请

US20130224944A1 METHODS FOR FABRICATING INTEGRATED CIRCUITS USING TAILORED CHAMFERED GATE LINER PROFILES 审中-公开
标题翻译：使用定制化的门式衬套轮廓制作集成电路的方法
公开(公告)号：US20130224944A1
公开(公告)日：2013-08-29
申请号：US13405414
申请日：2012-02-27
申请人： Puneet Khanna , Dae-han Choi , Katherina Babich , Catherine Labelle
发明人： Puneet Khanna , Dae-han Choi , Katherina Babich , Catherine Labelle
IPC分类号： H01L21/28
CPC分类号： H01L21/28114 , H01L29/42376 , H01L29/6653 , H01L29/66545 , H01L29/6659
摘要： Methods for fabricating integrated circuits using tailored chamfered gate liner profiles are provided. In an exemplary embodiment, a method for fabricating an integrated circuit includes forming a dummy gate electrode overlying a semiconductor substrate and forming a liner on sidewalls of the dummy gate electrode. A dielectric material is deposited overlying the dummy gate electrode, the liner, and the substrate. The dummy gate electrode is exposed by chemical mechanical planarization. A portion of the dummy gate electrode is removed and the liner is isotropically etched such that it has a chamfered surface. A remainder of the dummy gate electrode is removed to form an opening that is filled with a metal.
摘要翻译：提供了使用定制的倒角门衬垫轮廓制造集成电路的方法。在一个示例性实施例中，一种用于制造集成电路的方法包括形成覆盖在半导体衬底上的伪栅电极，并在虚拟栅电极的侧壁上形成衬垫。沉积在伪栅电极，衬垫和衬底上的电介质材料。虚拟栅电极通过化学机械平面化曝光。去除虚拟栅电极的一部分，并且将衬垫各向同性地蚀刻，使其具有倒角表面。去除虚拟栅电极的其余部分以形成填充有金属的开口。

8. 发明申请

US20060047313A1 Apparatus and methods for facilitating hemostasis within a vascular puncture 有权
标题翻译：用于促进血管穿刺止血的装置和方法
公开(公告)号：US20060047313A1
公开(公告)日：2006-03-02
申请号：US10928744
申请日：2004-08-27
申请人： Puneet Khanna , Farhad Khosravi
发明人： Puneet Khanna , Farhad Khosravi
IPC分类号： A61B17/04
CPC分类号： A61B17/08 , A61B17/0057 , A61B17/10 , A61B2017/00004 , A61B2017/00575 , A61B2017/00601 , A61B2017/00637 , A61B2017/0065 , A61B2017/00659
摘要： Apparatus for sealing a puncture communicating with a blood vessel includes a bioabsorbable sealing member secured to one end of a filament or other retaining member. The sealing member is delivered through the puncture into the vessel, and retracted against the wall of the vessel to provide temporary hemostasis. The sealing member is rapidly absorbed after exposure within the vessel, e.g., to an aqueous or heated physiological environment (e.g., exposure to blood or body temperature), immediately or shortly after completing a medical procedure via the puncture, e.g., within the time period that the patient is ambulatory optionally, extravascular sealing material is delivered into the puncture proximal to the sealing member. The retaining member and/or extravascular material may be bioabsorbable, being absorbed at a slower rate than the sealing member. Alternatively, the filament is removed from the puncture after hemostasis is established.
摘要翻译：用于密封与血管连通的穿刺的装置包括固定到细丝或其它保持构件的一端的生物可吸收密封构件。密封构件通过穿刺输送到容器中，并且缩回到容器的壁上以提供临时止血。在通过穿刺完成医疗程序之后立即或不久，例如在时间段内，密封构件在容器内暴露之后被快速吸收，例如水溶液或加热的生理环境（例如暴露于血液或体温）患者任意行走，血管外密封材料被输送到靠近密封构件的穿刺部位。保持构件和/或血管外材料可以是生物可吸收的，以比密封构件更慢的速度被吸收。或者，在建立止血后，从穿刺中除去细丝。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式