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    • 5. 发明授权
    • Frequency stable NPO ceramics
    • 频率稳定的NPO陶瓷
    • US5004713A
    • 1991-04-02
    • US375701
    • 1989-07-05
    • Pronob BardhanChyang J. Yu
    • Pronob BardhanChyang J. Yu
    • C04B35/46C04B35/475H01B3/12H01G4/12
    • C04B35/475H01B3/12H01G4/1218
    • Bismuth-containing temperature-stable dielectric ceramics are disclosed herein that are stable over a wide range of frequencies, and thus are suitable for ceramic capacitors and microwave dielectrics. This class of materials is defined by the formula Bi.sub.2 O.sub.3 xTiO.sub.2 wherein x ranges up to 7 and the Ti.sup.4+ ion may be replaced with mixed ions of equivalent charge, thus maintaining charge balance. Suitable replacements for the Ti.sup.4+ ion are: A.sub.1/3.sup.2+ B.sub.2/3.sup.5+, R.sub.2/3.sup.3+ C.sub.1/3.sup.6+, A.sub.1/2.sup.2+ C.sub.1/2.sup.6+, R.sub.1/2.sup.3+ B.sub.1/2.sup.5+, M.sub.1/4.sup.1+ B.sub.3/4.sup.5+, and M.sub.2/5 .sup.1+ C.sub.3/5.sup.6+ ; where M.sup.+ is selected from the group consisting of Li.sup.+, Na.sup.+, K.sup.+, Cu.sup.+, and Ag.sup.+ ; A.sup.2+ is selected from the group consisting of Mg.sup.2+, Zn.sup.2+, Ni.sup.2+ , Co.sup.2+, Cu.sup.2+, and Cd.sup.2+ ; R.sup.3+ is selected from the group consisting of Cr.sup.3+, Mn.sup.3+, Fe.sup.3+, Al.sup.3+, Ga.sup.3+, Zn.sup.3+, Tl.sup.3+, Sb.sup.3+, As.sup.3+, Y.sup.3+, Lu.sup.3+, Yb.sup.3+, Tm.sup.3+, Er.sup.3+, Ho.sup.3+, Dy.sup.3+, Tb.sup.3+, Gd.sup.3+, Eu.sup.3+, and Sm.sup.3+ ; B.sup.5+ is selected from the group consisting of Nb.sup.5+, Ta.sup.5+, and V.sup.5+ ; and C.sup.6+ is selected from the group consisting of W.sup.6+ and Mo.sup.6+.
    • 7. 发明授权
    • Dense sintered bodies of nitride materials
    • 密实烧结体的氮化物材料
    • US4719187A
    • 1988-01-12
    • US937209
    • 1986-12-03
    • Pronob BardhanGregory A. Merkel
    • Pronob BardhanGregory A. Merkel
    • C04B35/581C04B35/584C04B35/593C04B35/58C04B35/50
    • C04B35/593C04B35/581C04B35/584
    • This invention is directed to the production of nitride-based ceramic bodies selected from the group of AlN and Si.sub.3 N.sub.4 which can be sintered to near theoretical densities at temperatures at least 200.degree. C. lower than those required for the pure materials. Such bodies are densified through the addition of a metal fluoride selected from the group of aluminum, barium, calcium, srtrontium, yttrium, the lanthanide rare earth metals, and mixtures thereof. Up to 80% by weight of said metal fluoride may be included but, generally, such additions will be held between 5-30% by weight. AlN bodies exhibiting very high thermal conductivity can be prepared by sintering with a metal fluoride selected from the group of barium, calcium, strontium, yttrium, the lanthanide rare earth metals, and mixtures thereof.
    • 本发明涉及生产选自AlN和Si 3 N 4的氮化物基陶瓷体,其可在比纯材料所需的温度低至少200℃的温度下烧结至接近理论密度。 通过添加选自铝,钡,钙,锶,钇,镧系稀土金属和其混合物的金属氟化物,使这些体致密化。 可以包括高达80重量%的所述金属氟化物,但通常这种添加量将保持在5-30重量%之间。 表现出非常高导热性的AlN体可以通过用选自钡,钙,锶,钇,镧系稀土金属的金属氟化物及其混合物进行烧结来制备。
    • 8. 发明授权
    • Capacitors and high dielectric constant ceramics therefor
    • 电容器和高介电常数陶瓷
    • US4978646A
    • 1990-12-18
    • US318698
    • 1989-03-03
    • Pronob BardhanRoger F. BartholomewDonald M. Trotter, Jr.Chyang J. Yu
    • Pronob BardhanRoger F. BartholomewDonald M. Trotter, Jr.Chyang J. Yu
    • C04B35/00C04B35/46C04B35/475C04B35/495H01B3/12H01G4/12
    • H01G4/1209C04B35/475C04B35/495H01B3/12
    • This invention relates to the production of ceramic materials which exhibit a dielectric constant in excess of 105, when measured at room temperature, and a small temperature coefficient of capacitance across the temperature range of -55.degree. to 125.degree. C., when compared to the capacitance measured at room temperature, which material has a composition encompassed within one of the following general formulae:(Bi.sub.2 O.sub.2).sup.2+ (A.sub.m-1 B.sub.m O.sub.3m+1).sup.2- ; (I)(Bi.sub.2 O.sub.2).sup.2+ (A.sub.m-1 B.sub.m Zr.sub..beta. O.sub.3m+.delta.+1).sup.2- ; and (II)(Bi.sub.2 O.sub.2).sup.2+ (A.sub.m-1 B.sub.m Mn.sub..gamma. O.sub.3m+.delta.+1).sup.2- (III)(Bi.sub.2 O.sub.2).sup.2+ (A.sub.m-1 B.sub.m Zr.sub..beta. Mn.sub..gamma. O.sub.3m+.delta.+1).sup.2- (IV)wherein A consists essentially of at least one element selected from the group consisting of Na, K, Ca, Sr, Ba, Bi, and Pb, and B consists essentially of at least one element selected from the group consisting of Nb, Ta, and Ti, at least part of which is replaced with combinations of a wide variety of ions, and wherein m, .beta., .gamma., and .delta. are greater than 0.
    • 本发明涉及当在室温下测量时介电常数超过105的陶瓷材料的生产和在-55°至125℃的温度范围内的较小的电容温度系数,与 电容在室温下测得,该材料具有以下通式之一:(Bi2O2)2+(Am-1BmO3m + 1)2-; (I)(Bi 2 O 2)2+(Am-1BmZrβO3m +δ+ 1)2-; 和(II)(Bi 2 O 2)2+(Am-1BmMnγO 3m +δ+1)2-(III)(Bi 2 O 2)2+(Am-1BmZrβMnγO 3+ +δ+ 1)2-(IV)其中A基本上组成 的选自由Na,K,Ca,Sr,Ba,Bi和Pb组成的组中的至少一种元素,B基本上由至少一种选自Nb,Ta和Ti的元素组成,至少 其中一部分被各种各样的离子的组合代替,并且其中m,β,γ和δ大于0。