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1. 发明授权

US08575473B2 Lattice matchable alloy for solar cells 有权
标题翻译：用于太阳能电池的晶格匹配合金
公开(公告)号：US08575473B2
公开(公告)日：2013-11-05
申请号：US13618496
申请日：2012-09-14
申请人： Rebecca Elizabeth Jones , Homan Bernard Yuen , Ting Liu , Pranob Misra
发明人： Rebecca Elizabeth Jones , Homan Bernard Yuen , Ting Liu , Pranob Misra
IPC分类号： H01L31/00
CPC分类号： H01L31/03048 , C22C28/00 , C22C30/00 , C30B23/025 , C30B23/066 , C30B29/40 , C30B33/02 , H01L31/0304 , H01L31/03046 , H01L31/036 , H01L31/0725 , H01L31/0735 , H01L31/078 , H01L31/1844 , H01L31/1848 , H01L31/1852 , Y02E10/544 , Y02P70/521 , Y10T428/12
摘要： An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content, and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.
摘要翻译：提供了具有至少0.9eV的带隙，即具有低锑（Sb）含量和增强的铟（In）含量的Ga1-xInxNyAs1-y-zSbz的带隙的合金组合物，并且增强了氮（N）含量，实现了与GaAs和Ge衬底的实质晶格匹配，并在GaInNAsSb子电池中为多结太阳能电池提供高短路电流和高开路电压。 Ga1-xInxNyAs1-y-zSbz的组成范围为0.07 @ x @ 0.18,0.025 @ y @ 0.04和0.001 @ z @ 0.03。

2. 发明授权

US09337360B1 Non-alloyed contacts for III-V based solar cells 有权
标题翻译：用于III-V型太阳能电池的非合金触点
公开(公告)号：US09337360B1
公开(公告)日：2016-05-10
申请号：US12944361
申请日：2010-11-11
申请人： Michael W. Wiemer , Homan B. Yuen , Vijit A. Sabnis , Ting Liu , Pranob Misra , Michael J. Sheldon , Onur Fidaner
发明人： Michael W. Wiemer , Homan B. Yuen , Vijit A. Sabnis , Ting Liu , Pranob Misra , Michael J. Sheldon , Onur Fidaner
IPC分类号： H01L31/00 , H01L31/0224 , H01L31/0725 , H01L31/0735
CPC分类号： H01L31/022425 , H01L31/022433 , H01L31/0693 , H01L31/0725 , H01L31/0735 , Y02E10/544
摘要： A multi junction solar cell is provided with a non-alloyed ohmic contact metallization stack by inversion of the top semiconductor layer from n-type to p-type and including the utilization of a tunnel junction. Alternatively, the non-alloyed ohmic contact can be achieved by changing the top semiconductor layer from a higher bandgap material to a lower bandgap material.
摘要翻译：多结太阳能电池通过顶部半导体层从n型到p型反转并且包括利用隧道结而设置有非合金欧姆接触金属化堆叠。或者，非合金欧姆接触可以通过将顶部半导体层从较高带隙材料改变为较低带隙材料来实现。

3. 发明申请

US20120103403A1 MULTI-JUNCTION SOLAR CELL WITH DILUTE NITRIDE SUB-CELL HAVING GRADED DOPING 有权
标题翻译：多功能太阳能电池与具有分级掺杂的稀释氮化物细胞
公开(公告)号：US20120103403A1
公开(公告)日：2012-05-03
申请号：US12914710
申请日：2010-10-28
申请人： Pranob Misra , Rebecca Elizabeth Jones , Ting Liu , Ilya Fushman , Homan Bernard Yuen
发明人： Pranob Misra , Rebecca Elizabeth Jones , Ting Liu , Ilya Fushman , Homan Bernard Yuen
IPC分类号： H01L31/0288 , H01L31/18
CPC分类号： H01L31/0735 , H01L31/03042 , H01L31/03048 , H01L31/065 , H01L31/0687 , H01L31/0725 , H01L31/1844 , Y02E10/544
摘要： A lattice-matched solar cell having a dilute nitride-based sub-cell has exponential doping to thereby control current-carrying capacity of the solar cell. Specifically a solar cell with at least one dilute nitride sub-cell that has a variably doped base or emitter is disclosed. In one embodiment, a lattice matched multi junction solar cell has an upper sub-cell, a middle sub-cell and a lower dilute nitride sub-cell, the lower dilute nitride sub-cell having doping in the base and/or the emitter that is at least partially exponentially doped so as to improve its solar cell performance characteristics. In construction, the dilute nitride sub-cell may have the lowest bandgap and be lattice matched to a substrate, the middle cell typically has a higher bandgap than the dilute nitride sub-cell while it is lattice matched to the dilute nitride sub-cell. The upper sub-cell typically has the highest bandgap and is lattice matched to the adjacent sub-cell. In further embodiments, a multi junction solar cell according to the invention may comprise four, five or more sub-cells in which the one or more sub-cells may each comprise exponentially doped dilute nitride alloys.
摘要翻译：具有稀氮化物基子电池的晶格匹配太阳能电池具有指数掺杂，从而控制太阳能电池的载流能力。具体地说，公开了具有至少一个具有可变掺杂的基极或发射极的稀氮氮化物子电池的太阳能电池。在一个实施例中，晶格匹配多结太阳能电池具有上部子电池，中间子电池和下部稀的氮化物子电池，下部稀土氮化物子电池在基极和/或发射极中具有掺杂，至少部分地指数地掺杂，以便改善其太阳能电池性能特征。在构造中，稀氮氮化物子电池可能具有最低的带隙并且与衬底晶格匹配，中间电池通常在稀氮化物子电池与氮化稀土子电池晶格匹配时具有较高的带隙。上部子单元通常具有最高的带隙并且与相邻的子单元格子匹配。在另外的实施例中，根据本发明的多结太阳能电池可以包括四个，五个或更多个子电池，其中一个或多个子电池可以各自包含指数掺杂的稀氮化物合金。

4. 发明申请

US20110232730A1 LATTICE MATCHABLE ALLOY FOR SOLAR CELLS 审中-公开
标题翻译：太阳能电池适用合金
公开(公告)号：US20110232730A1
公开(公告)日：2011-09-29
申请号：US12749076
申请日：2010-03-29
申请人： Rebecca Elizabeth Jones , Homan Bernard Yuen , Ting Liu , Pranob Misra
发明人： Rebecca Elizabeth Jones , Homan Bernard Yuen , Ting Liu , Pranob Misra
IPC分类号： H01L31/0304 , C22C30/00 , H01L31/18
CPC分类号： H01L31/03048 , C22C28/00 , C22C30/00 , C30B23/025 , C30B23/066 , C30B29/40 , C30B33/02 , H01L31/0304 , H01L31/03046 , H01L31/036 , H01L31/0725 , H01L31/0735 , H01L31/078 , H01L31/1844 , H01L31/1848 , H01L31/1852 , Y02E10/544 , Y02P70/521 , Y10T428/12
摘要： An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.
摘要翻译：提供了具有至少0.9eV的带隙，即具有低锑（Sb）含量和增强的铟（In）含量和增强的氮的Ga1-xInxNyAs1-y-zSbz的太阳能电池的子电池的合金组合物（N）含量，实现了与GaAs和Ge衬底的实质晶格匹配，并在GaInNASSb子电池中为多结太阳能电池提供高短路电流和高开路电压。 Ga1-xInxNyAs1-y-zSbz的组成范围为0.07＆nlE; x＆nlE; 0.18,0.025＆amp; nlE; y＆nlE; 0.04和0.001＆amp; nlE; z＆nlE; 0.03。

5. 发明授权

US09214580B2 Multi-junction solar cell with dilute nitride sub-cell having graded doping 有权
标题翻译：具有分级掺杂的稀氮化物子电池的多结太阳能电池
公开(公告)号：US09214580B2
公开(公告)日：2015-12-15
申请号：US12914710
申请日：2010-10-28
申请人： Pranob Misra , Rebecca Elizabeth Jones , Ting Liu , Ilya Fushman , Homan Bernard Yuen
发明人： Pranob Misra , Rebecca Elizabeth Jones , Ting Liu , Ilya Fushman , Homan Bernard Yuen
IPC分类号： H01L31/0687 , H01L31/0304
CPC分类号： H01L31/0735 , H01L31/03042 , H01L31/03048 , H01L31/065 , H01L31/0687 , H01L31/0725 , H01L31/1844 , Y02E10/544
摘要： A lattice-matched solar cell having a dilute nitride-based sub-cell has exponential doping to thereby control current-carrying capacity of the solar cell. Specifically a solar cell with at least one dilute nitride sub-cell that has a variably doped base or emitter is disclosed. In one embodiment, a lattice matched multi junction solar cell has an upper sub-cell, a middle sub-cell and a lower dilute nitride sub-cell, the lower dilute nitride sub-cell having doping in the base and/or the emitter that is at least partially exponentially doped so as to improve its solar cell performance characteristics. In construction, the dilute nitride sub-cell may have the lowest bandgap and be lattice matched to a substrate, the middle cell typically has a higher bandgap than the dilute nitride sub-cell while it is lattice matched to the dilute nitride sub-cell. The upper sub-cell typically has the highest bandgap and is lattice matched to the adjacent sub-cell. In further embodiments, a multi junction solar cell according to the invention may comprise four, five or more sub-cells in which the one or more sub-cells may each comprise exponentially doped dilute nitride alloys.
摘要翻译：具有稀氮化物基子电池的晶格匹配太阳能电池具有指数掺杂，从而控制太阳能电池的载流能力。具体地说，公开了具有至少一个具有可变掺杂的基极或发射极的稀氮氮化物子电池的太阳能电池。在一个实施例中，晶格匹配多结太阳能电池具有上部子电池，中间子电池和下部稀的氮化物子电池，下部稀土氮化物子电池在基极和/或发射极中具有掺杂，至少部分地指数地掺杂，以便改善其太阳能电池性能特征。在构造中，稀氮氮化物子电池可能具有最低的带隙并且与衬底晶格匹配，中间电池通常在稀氮化物子电池与氮化稀土子电池晶格匹配时具有较高的带隙。上部子单元通常具有最高的带隙并且与相邻的子单元格子匹配。在另外的实施例中，根据本发明的多结太阳能电池可以包括四个，五个或更多个子电池，其中一个或多个子电池可以各自包含指数掺杂的稀氮化物合金。

6. 发明申请

US20130014815A1 LATTICE MATCHABLE ALLOY FOR SOLAR CELLS 有权
标题翻译：太阳能电池适用合金
公开(公告)号：US20130014815A1
公开(公告)日：2013-01-17
申请号：US13618496
申请日：2012-09-14
申请人： Rebecca Elizabeth Jones , Homan Bernard Yuen , Ting Liu , Pranob Misra
发明人： Rebecca Elizabeth Jones , Homan Bernard Yuen , Ting Liu , Pranob Misra
IPC分类号： H01L31/0304
CPC分类号： H01L31/03048 , C22C28/00 , C22C30/00 , C30B23/025 , C30B23/066 , C30B29/40 , C30B33/02 , H01L31/0304 , H01L31/03046 , H01L31/036 , H01L31/0725 , H01L31/0735 , H01L31/078 , H01L31/1844 , H01L31/1848 , H01L31/1852 , Y02E10/544 , Y02P70/521 , Y10T428/12
摘要： An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content, and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.
摘要翻译：提供了具有至少0.9eV的带隙，即具有低锑（Sb）含量和增强的铟（In）含量的Ga1-xInxNyAs1-y-zSbz的带隙的合金组合物，并且增强了氮（N）含量，实现了与GaAs和Ge衬底的实质晶格匹配，并在GaInNAsSb子电池中为多结太阳能电池提供高短路电流和高开路电压。 Ga1-xInxNyAs1-y-zSbz的组成范围为0.07＆nlE; x＆nlE; 0.18,0.025＆amp; nlE; y＆nlE; 0.04和0.001＆amp; nlE; z＆nlE; 0.03。

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